Microdamage Evolution, Energy Dissipation and Their Trans-Scale Effects on Macroscopic Failure

The process of damage evolution concerns various scales, from micro- to macroscopic. How to characterize the trans-scale nature of the process is on the challenging frontiers of solid mechanics. In this paper, a closed trans-scale formulation of damage evolution based on statistical microdamage mechanics is presented. As a case study, the damage evolution in spallation is analyzed with the formulation. Scaling of the formulation reveals that the following dimensionless numbers: reduced Mach number M, damage number S, stress wave Fourier number P, intrinsic Deborah number D*, and the imposed Deborah number De*, govern the whole process of deformation and damage evolution. The evaluation of P and the estimation of temperature increase show that the energy equation can be ignored as the first approximation in the case of spallation. Hence, apart from the two conventional macroscopic parameters: the reduced Mach number M and damage number S, the damage evolution in spallation is mainly governed by two microdamage-relevant parameters: the Deborah numbers D* and De*. Higher nucleation and growth rates of microdamage accelerate damage evolution, and result in higher damage in the target plate. In addition, the mere variation in nucleation rate does not change the spatial distribution of damage or form localized rupture, while the increase of microdamage growth rate localizes the damage distribution in the target plate, which can be characterized by the imposed Deborah number De*.

Statistics of dissipation and enstrophy induced by localized vortices

The ratios of enstrophy and dissipation moments induced by localized vorticity are inferred to be finite. It follows that the scaling exponents for locally averaged dissipation and enstrophy are equal. However, enstrophy and dissipation exponents measured over finite ranges of scales may be different. The cylindrical vortex profile that yields maximal moment ratios is determined. The moment ratios for cylindrical vortices are used to interpret differences in scale dependence of enstrophy and dissipation previously found in numerical simulations.

Characteristics Of Energy Dissipation In Hyperconcentrated Flows

An equilibrium equation for the turbulence energy in sediment-laden flows was derived on the basis of solid-liquid two-phase flow theory. The equation was simplified for two-dimensional, uniform, steady and fully developed turbulent hyperconcentrated flows. An energy efficiency coefficient of suspended-load motion was obtained from the turbulence energy equation, which is defined as the ratio of the sediment suspension energy to the turbulence energy of the sediment-laden flows. Laboratory experiments were conducted to investigate the characteristics of energy dissipation in hyperconcentrated flows. A total of 115 experimental runs were carried out, comprising 70 runs with natural sediments and 45 runs with cinder powder. Effects of sediment concentration on sediment suspension energy and flow resistance were analyzed and the relation between the energy efficiency coefficient of suspended-load motion and sediment concentration was established on the basis of experimental data. Furthermore, the characteristics of energy dissipation in hyperconcentrated flows were identified and described. It was found that the high sediment concentration does not increase the energy dissipation; on the contrary, it decreases flow resistance.

Energy Dissipation In Fracture Of Bulk Metallic Glasses Via Inherent Competition Between Local Softening And Quasi-Cleavage

Compression, tension and high-velocity plate impact experiments were performed on a typical tough Zr41.2Ti13.8Cu10Ni12.5Be22.5 (Vit 1) bulk metallic glass (BMG) over a wide range of strain rates from similar to 10(-4) to 10(6) s(-1). Surprisingly, fine dimples and periodic corrugations on a nanoscale were also observed on dynamic mode I fracture surfaces of this tough Vit 1. Taking a broad overview of the fracture patterning of specimens, we proposed a criterion to assess whether the fracture of BMGs is essentially brittle or plastic. If the curvature radius of the crack tip is greater than the critical wavelength of meniscus instability [F. Spaepen, Acta Metall. 23 615 (1975); A.S. Argon and M. Salama, Mater. Sci. Eng. 23 219 (1976)], microscale vein patterns and nanoscale dimples appear on crack surfaces. However, in the opposite case, the local quasi-cleavage/separation through local atomic clusters with local softening in the background ahead of the crack tip dominates, producing nanoscale periodic corrugations. At the atomic cluster level, energy dissipation in fracture of BMGs is, therefore, determined by two competing elementary processes, viz. conventional shear transformation zones (STZs) and envisioned tension transformation zones (TTZs) ahead of the crack tip. Finally, the mechanism for the formation of nanoscale periodic corrugation is quantitatively discussed by applying the present energy dissipation mechanism.

Effects of Ag on electrical properties of Ag/Ni/p-GaN ohmic contact

Properties of the Ag/Ni/p-GaN structure at different temperatures are studied by Auger electron spectroscopy, scanning electron microscopy and high resolution x-ray diffraction. The effect of Ag in ohmic contact on the crystalline quality is investigated and the optimized value of annealing temperature is reported. The lowest specific contact resistance of 2.5 x 10(-4) Omega cm(2) is obtained at annealing temperature of 550 degrees C.

Dynamics of quantum dissipation systems interacting with fermion and boson grand canonical bath ensembles: Hierarchical equations of motion approach

A hierarchical equations of motion formalism for a quantum dissipation system in a grand canonical bath ensemble surrounding is constructed on the basis of the calculus-on-path-integral algorithm, together with the parametrization of arbitrary non-Markovian bath that satisfies fluctuation-dissipation theorem. The influence functionals for both the fermion or boson bath interaction are found to be of the same path integral expression as the canonical bath, assuming they all satisfy the Gaussian statistics. However, the equation of motion formalism is different due to the fluctuation-dissipation theories that are distinct and used explicitly. The implications of the present work to quantum transport through molecular wires and electron transfer in complex molecular systems are discussed. (c) 2007 American Institute of Physics.

Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots

Quantum dissipation and broadening mechanisms in Si-doped InGaN quantum dots are studied via the photoluminescence technique. It is found that the dissipative thermal bath that embeds the quantum dots plays an important role in the photon emission processes. Observed spontaneous emission spectra are modeled with the multimode Brownian oscillator model achieving an excellent agreement between experiment and theory for a wide temperature range. The dimensionless Huang-Rhys factor characterizing the strength of electron-LO-phonon coupling and damping constant accounting for the LO-phonon-bath interaction strength are found to be similar to 0.2 and 200 cm(-1), respectively, for the InGaN QDs. (c) 2006 American Institute of Physics.

A 5.6-mW Power Dissipation CMOS Frequency Synthesizer for L1/L2 Dual-Band GPS Application

This paper presents a wide tuning range CMOS frequency synthesizer for dual-band GPS receiver, which has been fabricated in a standard 0.18-um RF CMOS process. With a high Q on-chip inductor, the wide-band VCO shows a tuning range from 2 to 3.6GHz to cover 2.45GHz and 3.14GHz in case of process corner or temperature variation, with a current consumption varying accordingly from 0.8mA to 0.4mA, from a 1.8V supply voltage. The measurement results show that the whole frequency synthesizer costs a very low power consumption of 5.6mW working at L I band with in-band phase noise less than -82dBc/Hz and out-of-band phase noise about -112 dBc/Hz at 1MHz offset from a 3.142GHz carrier.

Fabrication of Silicon-Based Template-Assisted Nanoelectrode Arrays and Ohmic Contact Properties Investigation

A convenient fabrication technology for large-area, highly-ordered nanoelectrode arrays on silicon substrate has been described here, using porous anodic alumina (PAA) as a template. The ultrathin PAA membranes were anodic oxidized utilizing a two-step anodization method, from Al film evaporated on substrate. The purposes for the use of two-step anodization were, first, improving the regularity of the porous structures, and second reducing the thickness of the membranes to 100 similar to 200 nm we desired. Then the nanoelectrode arrays were obtained by electroless depositing Ni-W alloy into the through pores of PAA membranes, making the alloy isolated by the insulating pore walls and contacting with the silicon substrates at the bottoms of pores. The Ni-W alloy was also electroless deposited at the back surface of silicon to form back electrode. Then ohmic contact properties between silicon and Ni-W alloy were investigated after rapid thermal annealing. Scanning electron microscopy (SEM) observations showed the structure characteristics, and the influence factors of fabrication effect were discussed. The current voltage (I-V) curves revealed the contact properties. After annealing in N-2 at 700 degrees C, good linear property was shown with contact resistance of 33 Omega, which confirmed ohmic contacts between silicon and electrodes. These results presented significant application potential of this technology in nanosize current-injection devices in optoelectronics, microelectronics and bio-medical fields.

INDIUM OHMIC CONTACTS TO N-ZNSE

The reaction between an indium over layer and high purity MBE grown n-ZnSe chlorine doped (2x 10(18) cm-3) epilayers has been investigated using X-ray diffraction, Rutherford backscattering spectroscopy, X-ray photoelectron and Auger electron spectroscopy, and by electrical function tests (I-V and C-V). Good ohmic contacts were formed after annealing at 250 or 300-degrees-C for a few minutes in forming gas. Annealing at lower or higher temperatures resulted in higher resistance or rectifying contacts. The data show that no compounds were formed at the interface; instead In appeared to diffuse into the ZnSe. High surface doping densities appear to allow an ohmic contact, but the electrical data suggest that compensation effects are also very significant in the formation of the contact. These effects must be considered for successful formation of the ohmic contact.