Enhancement of 1.53 mu m photoluminescence from spin-coated Er-Si-O (Er2SiO5) crystalline films by nitrogen plasma treatment

Er-Si-O (Er2SiO5) crystalline films are fabricated by the spin-coating and subsequent annealing process. The fraction of erbium is estimated to be 21.5 at% based on Rutherford backscattering measurement. X-ray diffraction pattern indicates that the Er-Si-O films are similar to Er2SiO5 compound in the crystal structure. The fine structure of room-temperature photoluminescence of Er3+-related transitions suggests that Er has a local environment similar to the Er-O-6 octahedron. Our preliminary results show that the intensity of 1.53 mu m emission is enhanced by a factor of seven after nitrogen plasma treatment by NH3 gas with subsequent post-annealing. The full-width at half-maximum of 1.53 pm emission peak increases from 7.5 to 12.9 nm compared with that of the untreated one. Nitrogen plasma treatment is assumed to tailor Er3+ local environment, increasing the oscillator strength of transitions and thus the excitation/emission cross-section. (c) 2005 Elsevier B.V. All rights reserved.

Effects of rapid thermal annealing on the optical properties of GaNxAs1-x/GaAs single quantum well structure grown by molecular beam epitaxy

The effect of rapid thermal annealing (RTA) on the optical properties of GaNxAs1-x/GaAs strained single quantum well (SQW) was studied by low-temperature photoluminescence (PL). The GaNxAs1-x/GaAs SQW structures were prepared by dc active nitrogen plasma assisted molecular beam epitaxy. PL measurements on a series of samples with different well widths and nitrogen compositions were used to evaluate the effects of RTA. The annealing temperature and time were varied from 650 to 850 degrees C and 30 s to 15 min, respectively. Remarkable improvements of the optical properties of the samples were observed after RTA under optimum conditions. The interdiffusion constants have been calculated by taking into account error function diffusion and solving the Schrodinger equation. The estimated interdiffusion constants D are 10(-17)-10(-16) cm(2)/s for the earlier annealing conditions. Activation energies of 6-7 eV are obtained by fitting the temperature dependence of the interdiffusion constants. (C) 2000 American Institute of Physics. [S0021-8979(00)10401-3].

Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 mu m to 1.55 mu m GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy

High (42.5%) indium content GaInNAs/GaAs quantum wells with room temperature emission wavelength from 1.3 mu m to 1.5 mu m range were successfully grown by Radio Frequency Plasma Nitrogen source assisted Molecular Beam Epitaxy. The growth parameters of plasma power and N-2 How rate were optimized systematically to improve the material quality. Photoluminescence and transmission electron microscopy measurements showed that the optical and crystal quality of the 1.54 mu m GaInNAs/GaAs QWs was kept as comparable as that in 1.31 mu m.

MBE of GaN with DC-plasma source for nitrogen activation

In this paper we report on the first results of epitaxial growth of GaN layers on GaAs (100) substrates using a modified MBE system, equipped with a DC-plasma source for nitrogen activation in configuration of reverse magnetron at ultra-low pressures.

Plasma and electrode emissions from a 1 kW hydrogen-nitrogen arcjet thruster

Arc root behavior affects the energy transfer and nozzle erosion in an arcjet thruster. To investigate the development of arc root attachment in 1 kW class N2 and H2-N2 arcjet thrusters from the time of ignition to the stably working condition, a kinetic series of end-on view images of the nozzle obtained by a high-speed video camera was analyzed. The addition of hydrogen leads to higher arc voltage levels and the determining factor for the mode of arc root attachment was found to be the nozzle temperature. At lower nozzle temperatures, constricted type attachment with unstable motions of the arc root was observed, while a fully diffused and stable arc root was observed at elevated nozzle temperatures.

IMPROVEMENT OF OXYGEN NITROGEN PERMSELECTIVITY OF POLY[1-(TRIMETHYLSILYL)-1-PROPYNE] MEMBRANE BY PLASMA POLYMERIZATION

The oxygen permselectivity of a poly[1-(trimethylsilyl)-1-propyne) (PTMSP) membrane was drastically improved by plasma polymerization of fluorine-containing monomers. The effects of such plasma polymerization conditions as deposition time, plasma power an

Arc Root Attachment on the Anode Surface of Arc Plasma Torch Observed with a Novel Method

The arc-root attachment on the anode surface of a dc non-transferred arc plasma torch has been successfully observed using a novel approach. A specially designed copper mirror with a boron nitride film coated on its surface central-region is employed to avoid the effect of intensive light emitted from the arc column upon the observation of weakly luminous arc root. It is found that the arc-root attachment is diffusive on the anode surface of the argon plasma torch, while constricted arc roots often occur when hydrogen or nitrogen is added into argon as the plasma-forming gas.

Generation of long, laminar plasma jets at atmospheric pressure and effects of flow turbulence

Long, laminar plasma jets at atmospheric pressure of pure argon and a mixture of argon and nitrogen with jet length up to 45 fi,Hes its diameter could be generated with a DC are torch by! restricting the movement of arc root in the torch channel. Effects of torch structure, gas feeding, and characteristics of power supply on the length of plasma jets were experimentally examined. Plasma jets of considerable length and excellent stability could be obtained by regulating the generating parameters, including are channel geometry gas flow I ate, and feeding methods, etc. Influence of flow turbulence at the torch,nozzle exit on the temperature distribution of plasma jets was numerically simulated. The analysis indicated that laminar flow plasma with very low initial turbulent kinetic energy will produce a long jet, with low axial temperature gradient. This kind of long laminar plasma jet could greatly improve the controllability for materials processing, compared with a short turbulent are let.

The mechanical properties of an aluminum alloy by plasma-based ion implantation and solution-aging treatment

The age-strengthening 2024 aluminum alloy was modified by a combination of plasma-based ion implantation (PBII) and solution-aging treatments. The depth profiles of the implanted layer were investigated by X-ray photoelectron spectroscopy (XPS). The structure was studied by glancing angle X-ray diffraction (GXRD). The variation of microhardness with the indenting depth was measured by a nanoindenter. The wear test was carried on with a pin-on-disk wear tester. The results revealed that when the aluminum alloys were implanted with nitrogen at the solution temperature, then quenched in the vacuum chamber followed by an artificial aging treatment for an appropriate time, the amount of AIN precipitates by the combined treatment were more than that of the specimen implanted at ambient temperature. Optimum surface mechanical properties were obtained. The surface hardness was increased and the weight loss in a wear test decreased too.

Comparative observation of Ar, Ar-H-2 and Ar-N-2 DC arc plasma jets and their arc root behaviour at reduced pressure

Results observed experimentally are presented, about the DC arc plasma jets and their arc-root behaviour generated at reduced gas pressure without or with an applied magnetic field. Pure argon, argon-hydrogen or argon- nitrogen mixture was used as the plasma-forming gas. A specially designed copper mirror was used for a better observation of the arc-root behaviour on the anode surface of the DC non-transferred arc plasma torch. It was found that in the cases without an applied magnetic field, the laminar plasma jets were stable and approximately axisymmetrical. The arc-root attachment on the anode surface was completely diffusive when argon was used as the plasma-forming gas, while the arc-root attachment often became constrictive when hydrogen or nitrogen was added into the argon. As an external magnetic field was applied, the arc root tended to rotate along the anode surface of the non-transferred arc plasma torch.

Comparative Observation of DC Arc Plasma Jets and Their Arc Root Behaviors at Reduced Pressure

Experimentally observed, results are presented for the DCarcplasmajets and theirarc-rootbehaviors generated atreduced gas pressure and without or with an' applied magnetic field. Pure argon, argon -hydrogen or argon-nitrogen mixture is used as the plasma-forming gas. A specially designed copper mirror is constructed and used for better observing the arc-root behavior on the anode surface of the DC non-transferred arcplasma torch. It is shown that for the cases without applied magnetic field, the laminar plasmajets are stable and approximately axisymmetrical. The arc-root attachment on the anode surface is completely diffusive when argon is used as the plasma-forming gas, while the arc-root attachment often becomes constrictive when hydrogen or nitrogen is added into the argon. When an external magnetic field is applied, the arcroot tends to rotate along the anode surface of the non-transferred arcplasma torch.

Hematological and plasma biochemical responses of crucian carp (Carassius auratus) to intraperitoneal injection of extracted microcystins with the possible mechanisms of anemia

Alterations in hematological indices such as decreases in blood cell counts (RBC), hematocrit (Ht) and hemoglobin (Hb) concentrations are key symptoms of anemia. However, few experiments were conducted to examine changes in hematological indices of fish exposed to microcystins that are believed to be fatal to circulatory systems of vertebrates. An acute toxicological experiment was designed to study hematological changes of crucian carp injected intraperitoneally (i.p.) with extracted microcystins at two doses, 50 and 200 mu g MC-LReqkg(-1) body weight. After being i.p. injected with microcystins, the fish exhibited behavioral abnormity. There were significant decreases in RBC in the high-dose group, and in Ht and Hb concentrations in both dose groups, while erythrocte sedimentation rate (ESR) significantly increased, indicating the appearance of normocytic anemia. There were no prominent changes in the three red cell indices, mean corpuscular volume (MCV), mean corpuscular hemoglobin (MCH,), and mean corpuscular hemoglobin concentration (MCHC). Increases in blood urea nitrogen (BUN) and creatinine (CR) in both dose groups suggest the occurrence of kidney impairment. Alteration in blood indices was reversible at the low dose group. Conclusively, anemia induced by kidney impairment was a key factor to cause abnormity of swimming behaviors and high mortality of crucian carp. (c) 2007 Elsevier Ltd. All rights reserved.

ECR plasma in growth of cubic GaN by low pressure MOCVD

To heteroepitaxally grow the crystalline cubic-GaN (c-GaN) film on the substrates with large lattice mismatch is basically important for fabricating the blue or ultraviolet laser diodes based on cubic group III nitride materials. We have obtained the crystalline c-GaN film and the heteroepitaxial interface between c-Gan and GaAs (001) substrate by the ECR Plasma-Assisted Metal Organic Chemical Vapor Deposition (PA-MOCVD) under low-pressure and low-temperature (similar to600degreesC) on a homemade ECR-plasma Semiconductor Processing Device (ESPD). In order to decrease the growth temperature, the ECR plasma source was adopted as the activated nitrogen source, therefore the working pressure of MOCVD was decreased down to the region less than 1 Pa. To eliminate the damages from energetic ions of current plasma source, a Multi-cusp cavity,coupling ECR Plasma source (MEP) was selected to use in our experiment. To decrease the strain and dislocations induced from the large lattice mismatch between c-GaN and GaAs substrate, the plasma pretreatment procedure i.e., the initial growth technique was investigated The experiment arrangements, the characteristics of plasma and the growth procedure, the characteristics on-GaN film and interface between c-GaN and GaAs(001), and the roles of ECR plasma are described in this contribution.

Photoluminescence properties of nitrogen-doped ZnSe epilayers

The photoluminescence (PL) properties of nitrogen-doped ZnSe epilayers grown on semi-insulating GaAs(100) substrates by MBE using a rf-plasma source for N doping were investigated. The PL peak which can be related to N acceptor was observed in the PL spectra of ZnSe:N smaples. At 10K, as the excitation power density increases, the energy of donor-acceptor pair(DAP) emission shows a blue-shift and its intensity tends to saturate. As the temperature increases over a range from 10K to 300K, the relative PL intensity of donor bound exciton to that of the acceptor bound exciton increases due to the transfer between two bound excitons.