Asymptotic analysis for a crack on interface of damaged materials

An asymptotic analysis for a crack lying on the interface of a damaged plastic material and a linear elastic material is presented in this paper. The present results show that the stress distributions along the crack tip are quite similar to those with HRR singularity field and the crack faces open obviously. Material constants n, mu and mo are varied to examine their effects on the resulting stress distributions and displacement distributions in the damaged plastic region. It is found that the stress components sigma(rr), sigma(theta theta), sigma(r theta) and sigma(e) are slightly affected by the changes of material constants n, mu and m(0), but the damaged plastic region are greatly disturbed by these material parameters.

Origin and evolution of new genes

Organisms have variable genome sizes and contain different numbers of genes. This difference demonstrates that new gene origination is a fundamental process in evolutionary biology. Though the study of the origination of new genes dated back more than hal

Sol-gel method for the preparation of solid-phase microextraction fibers

A novel sol-gel method is applied for the preparation of solid-phase microextraction (SPME) fibers. Scanning electron microscopy experiments suggested a porous structure for the poly(dimethylsiloxane) (PDMS) coating. SPME-GC analysis provided evidence that the sol-gel fibers have some advantages, such as high thermal stability, efficient extraction rates, high velocities of mass transfer, and spacious range of application.

Design of Low Power Multi-Standard Active-RC Filter for WLAN and DVB-H

In this paper, a low-power, highly linear, integrated, active-RC filter exhibiting a multi-standard (IEEE 802.11a/b/g and DVB-H) application and bandwidth (3MHz, 4MHz, 9.5MHz) is present. The filter exploits digitally-controlled polysilicon resister banks and an accurate automatic tuning scheme to account for process and temperature variations. The automatic frequency calibration scheme provides better than 3% corner frequency accuracy. The Butterworth filter is design for receiver (WLAN and DVB-H mode) and transmitter (WLAN mode). The filter dissipation is 3.4 mA in RX mode and 2.3 mA (only for one path) in TX mode from 2.85-V supply. The dissipation of calibration consumes 2mA. The circuit has been fabricated in a 0.35um 47-GHz SiGe BiCMOS technology, the receiver and transmitter occupy 0.28-mm(2) and 0.16-mm(2) (calibration circuit excluded), respectively.

Effect of Silicon-on-Insulator Substrate on Residual Strain in 3C-SiC Films

One group of SiC films are grown on silicon-on-insulator （SOI） substrates with a series of silicon-overlayer thickness. Raman scattering spectroscopy measurement clearly indicates that a systematic trend of residual stress reduction as the silicon over-layer thickness decreases for the SOI substrates. Strain relaxation in the SiC epilayer is explained by force balance approach and near coincidence lattice model.

Improved neutron radiation hardness for Si detectors: Application of low resistivity starting material and or manipulation of N-eff by selective filling of radiation-induced traps at low temperatures

Radiation-induced electrical changes in both space charge region (SCR) of Si detectors and bulk material (BM) have been studied for samples of diodes and resistors made on Si materials with different initial resistivities. The space charge sign inversion fluence (Phi(inv)) has been found to increase linearly with the initial doping concentration (the reciprocal of the resistivity), which gives improved radiation hardness to Si detectors fabricated from low resistivity material. The resistivity of the BM, on the other hand, has been observed to increase with the neutron fluence and approach a saturation value in the order of hundreds k Omega cm at high fluences, independent of the initial resistivity and material type. However, the fluence (Phi(s)), at which the resistivity saturation starts, increases with the initial doping concentrations and the value of Phi(s) is in the same order of that of Phi(inv) for all resistivity samples. Improved radiation hardness can also be achieved by the manipulation of the space charge concentration (N-eff) in SCR, by selective filling and/or freezing at cryogenic temperatures the charge state of radiation-induced traps, to values that will give a much smaller full depletion voltage. Models have been proposed to explain the experimental data.

Electronic investigation of self-organized InAs quantum dots

Deep Level Transient Spectroscopy (DLTS) has been applied to investigate the electronic properties of self-organized InAs quantum dots. The energies of electronic ground states of 2.5ML and 1.7ML InAs quantum dots (QDs) with respect to the conduction band of bulk GaAs are about 0.21 eV and 0.09 eV, respectively. We have found that QDs capture electrons by lattice relaxation through a multi-phonon emission process. The samples are QDs embedded in superlattices with or without a 500 Angstrom GaAs spacing layer between every ten periods of a couple of GaAs and InAs layers. The result shows that the density of dislocations in the samples with spacer layers is much lower than in the samples without the spacer layers.

Influence of interdot electronic coupling on photoluminescence spectra of self-assembled InAs/GaAs quantum dots

The influence of interdot electronic coupling on photoluminescence (PL) spectra of self-assembled InAs/GaAs quantum dots (QDs) has been systematically investigated combining with the measurement of transmission electron microscopy. The experimentally observed fast red-shift of PL energy and an anomalous reduction of the linewidth with increasing temperature indicate that the QD ensemble can be regarded as a coupled system. The study of multilayer vertically coupled QD structures shows that a red-shift of PL peak energy and a reduction of PL linewidth are expected as the number of QD layers is increased. On the other hand, two layer QDs with different sizes have been grown according to the mechanism of a vertically correlated arrangement. However, only one PL peak related to the large QD ensemble has been observed due to the strong coupling in InAs pairs. A new possible mechanism to reduce the PL linewidth of QD ensemble is also discussed.

The enhancement of diffusion by strain of InAs quantum dots in a GaAs matrix

We investigate the annealing behavior of Photoluminescence (PL) from self-assembled InAs quantum dots (QDs) with different thicknesses GaAs cap layers. The diffusion introduced by annealing treatment results in a blue-shift of the QD PL peak, and a decrease in the integrated intensity. The strain present in QDs enhances the diffusion, and the QDs with the cap layers of different thicknesses will experience a strain of different strength. This can lend to a, better understanding of the larger blue-shift of the PL peak of the deeper buried QDs, and the different variance of the full width at half maximum of the luminescence from QDs with the cap layers of different thicknesses.

Period-doubling bifurcations of the thermocapillary convection in a floating half zone

This study experimentally explored the fine structures of the successive period-doubling bifurcations of the time-dependent thermocapillary convection in a floating half zone of 10 cSt silicone oil with the diameter d (0)=3.00 mm and the aspect ratio A=l/d (0)=0.72 in terrestrial conditions. The onset of time-dependent thermocapillary convection predominated in this experimental configuration and its subsequent evolution were experimentally detected through the local temperature measurements. The experimental results revealed a sequence of period-doubling bifurcations of the time-dependent thermocapillary convection, similar in some way to one of the routes to chaos for buoyant natural convection. The critical frequencies and the corresponding fractal frequencies were extracted through the real-time analysis of the frequency spectra by Fast-Fourier-Transformation (FFT). The projections of the trajectory onto the reconstructed phase-space were also provided. Furthermore, the experimentally predicted Feigenbaum constants were quite close to the theoretical asymptotic value of 4.669 [Feigenbaum M J. Phys Lett A, 1979, 74: 375-378].

Thermal analysis of poly(3-hydroxybutyrate-co-3-hydroxyvalerate) irradiated under vacuum

Poly(3-hydroxybutyrate-co-3-hydroxyvalerate) (PHBV) was irradiated by Co-60 gamma-rays (doses of 50, 100 and 200kGy) under vacuum. The thermal analysis of control and irradiated PHBV, under vacuum was carried out by thermogravimetric analysis (TGA) and differential scanning calorimetry (DSC). The tensile properties of control and irradiated PHBV were examined by using an Instron tensile testing machine. In the thermal degradation of control and irradiated PHBV, a one-step weight loss was observed. The derivative thermogravimetric curves of control and irradiated PHBV confirmed only one weight-loss step change. The onset degradation temperature (T-o) and the temperature of maximum weight-loss rate (T-p) of control and irradiated PHBV were in line with the heating rate (degreesC min(-1)). T-o and T-p of PHBV decreased with increasing radiation dose at the same heating rate. The DSC results showed that Co-60 gamma-radiation significantly affected the thermal properties of PHBV. With increasing radiation dose, the melting temperature (T-m) of PHBV shifted to a lower value, due to the decrease in crystal size. The tensile strength and fracture strain of the irradiated PHBV decreased, hence indicating an increased brittleness.