Investigation on Depth of Heat Affected Zone of Discharge Spot by High Repetitive Rate YAG Laser-Induced Discharge Texturing

It is known that the press formability and the elongation of laser textured sheet are improved, and the service life of textured roll is longer than that of the un-textured roll due to hardening of the treated surface. One of the goals to develop high repetitive rate YAG laser-induced discharge texturing (LIDT) is to get deeper hardening zone. By observing and measuring cross-section of LIDT spots in different discharge conditions, it is found that the single-crater, which is formed by the discharge conditions of anode, which is covered by an oil film and with rectangular current waveform, has the most depth of heat affected zone (HAZ) comparing with other crater shapes when discharge energy is the same. The depth of HAZ is mainly depends on pulse duration when the discharge spot is single-crater. The results are analyzed.

YAG激光毛化技术进展

二十世纪八十年代，当比利时冶金研究中心(CRM)开发出CO_2激光毛化冷轧辊技术后，尝试用YAG激光进行轧辊毛化一直吸引着众多的研究者，这是因为YAG(1.06μm)激光波长比CO_2(10.6μm)激光波长短一个量级，材料对YAG激光有更高的吸收率，并用YAG激光可以聚焦到更小的光斑尺寸，同时使用电信号驱动的声光开关技术便于对毛化分布进行可设定控制。但是用传统声光调制的YAG激光虽然可以碇以很高的脉冲频率(>30kHz)，但单脉冲有量仅为10mJ左右，难以达到辊面毛化粗糙度的要求，因此人们认为YAG激光用于毛化的主要困难是脉冲能量太小。

Improved purity of long-wavelength InAsSb epilayers grown by melt epitaxy in fused silica boats

In this study, we first present the process of the melt epitaxial (ME) growth method, and the improvement of low-temperature electron mobility of the long-wavelength InAsSb epilayers grown by ME in a fused silica boat. The electrical properties were investigated by van der Pauw measurement at 300 and 77 K. It is seen that the electron mobility of the InAsSb samples grown by graphite boat decreased from 55,700 to 26,600 cm(2)/V s when the temperature was reduced from 300 to 77 K, while for the samples grown by fused silica boat, the electron mobility increased from 52,600 at 300 K to 54,400 cm(2)/V s at 77 K. The electron mobility of 54,400cm(2)/Vs is the best result, so far, for the InAsSb materials with cutoff wavelength of 8-12 mum at 77 K. This may be attributed to the reduction of the carbon contamination by using a fused silica boat instead of a graphite boat. (C) 2002 Elsevier Science B.V. All rights reserved.

Liquid encapsulated-melt zone processing of GaAs

A liquid encapsulated melt Bone process has been developed for single crystal growth of GaAs. Single crystals of 40 mm long have been grown with this technique. To avoid unwanted nucleation events and maintain a constant crystal diameter, from top to bottom growth using a short zone with a convex zone surface was found to give the best results. An arsenic overpressure was used to in conjunction with a B2O3 encapsulant in order to suppress arsenic dissociation from the melt and maintain the stoichiometry of the crystal.

Electrical properties of semi-insulating GaAs grown from the melt under microgravity conditions

A technologically important undoped semi-insulating (SI) GaAs single crystal was successfully grown in the Chinese recoverable satellite as far as we know for the first time by using a similar growth configuration described previously. The experimental results proved that the space SI GaAs crystals have a lower density of defects and defect-impurity complexes as well as a better uniformity.

Crystallographic and electrochemical characteristics of melt-spun Ti–Zr–Ni–Y alloys

Ti45Zr30Ni25Yx (x = 1, 3, 5 and 7) alloys were prepared by melt-spinning at wheel velocity of 20 m s(-1). The effect of additive Y on phase structure and electrochemical performance of melt-spun alloys was investigated. Ti45Zr30Ni25Yx melt-spun alloys were composed of I-phase and amorphous phase. T

Crystallographic and electrochemical characteristics of melt-spun Ti-Zr-Ni-La alloys

Ti-based icosahedral quasicrystalline phase (I-phase) exhibited excellent hydrogen storage property for special structure. Unfortunately, the application as the negative electrode material of the nickel-metal hydride batteries was limited due to the poor electrochemical kinetics. Meanwhile, rare-earth element was beneficial to the electrochemical properties of Ti, Zr-based alloy.

Phase separation and crystallization in a melt-spun Ti45Zr35Ni17Cu3 alloy

Structure and crystallization behavior of amorphous and quasicrystalline Ti45Zr35Ni17Cu3 alloy have been studied. DSC trace of the amorphous alloy obtained during continuous heating to 1300 K shows distinctly an exothermic peak and two endothermic peaks.

Characterization of High Melt Strength Polypropylene Synthesized via Silane Grafting Initiated by In Situ Heat Induction Reaction

High melt strength polypropylene (HMSPP) was synthesized by in situ heat induction reaction, in which pure polypropylene (PP) powders without any additives were used as a basic resin and vinyl trimethoxysilane (VTMS) as a grafting and crosslinking agent. The grafting reaction of VTMS with PP was confirmed by FTIR. The structure and properties of HMSPP were characterized by means of various measurements. The content of grafted silane played a key role on the melt strength and melt flow rate (MFR) of HMSPP. With increasing the content of grafted silane, the melt strength of HMSPP increased, and the MFR reduced. In addition, due to the existence of cross-linking structure, the thermal stability and tensile strength of HMSPP were improved compared with PP.

Novel morphology of polyethylene crystals created upon melt crystallization of spin-coated film

We demonstrate a strikingly novel morphology of high-density polyethylene (HDPE) crystal obtained upon melt crystallization of spin-coated thin film. This crystal gives windmill-like morphology which contains a number of petals. A detailed inspection on this morphology reveals that each petal is actually composed of terrace-stacked PE lamellae, in which the polymer chains within crystallographic a-c planes adopt similar to 45 degrees tilting around b-axis. The surrounding domains associated with a petal of the windmill composed of twisted lamellar overgrowths with an identical orientation of their long axis, which is the crystallographic b-axis shared by the petal and its corresponding twisted lamellar overgrowths.