Optimized phase pupil masks for extended depths of field

By properly designing a phase pupil mask to modulate or encode the optical images and then digitally restoring them, one can greatly extend the depth of field and improve image quality. The original works done by Dowski and Cathey introduce the use of a cubic phase pupil mask to extend the depth of field. The theoretical and experimental researches all verified its effectiveness. In this paper, we suggest the use of an exponential phase pupil mask to extend the depth of field. This phase mask has two variable parameters for designing to control the shape of the mask so as to modulate the wave-front more flexible. We employ an optimization procedure based on the Fisher information metric to obtain the optimum values of the parameters for the exponential and the cubic masks, respectively. A series of performance comparisons between these two optimized phase masks in extending the depth of field are then done. The results show that the exponential phase mask provide slight advantage to the cubic one in several aspects. (c) 2006 Elsevier B.V. All rights reserved.

High-quality multiple quantum wells selectively grown with tapered masks by ultra-low-pressure MOCVD

An InGaAsP/InGaAsP multiple quantum wells (MQWs) selectively grown by ultra-low-pressure (22 mbar) metal-organic chemical vapor deposition was investigated in this article. A 46 nm photoluminescence peak wavelength shift was obtained with a small mask width variation (15-30 mu m). High-quality crystal layers with a photoluminescence (PL) ftill-width-at-half-maximum (FWHM) of less than 30 meV were achieved. Using novel tapered masks, the transition-effect of the tapered region was also studied. The energy detuning of the tapered region was observed to be saturated with the larger ratio of the mask width divided to the tapered region length. (C) 2005 Elsevier B.V. All rights reserved.

Optimized logarithmic phase masks used to generate defocus invariant modulation transfer function for wavefront coding system

In a previous Letter [Opt. Lett. 33, 1171 (2008)], we proposed an improved logarithmic phase mask by making modifications to the original one designed by Sherif. However, further studies in another paper [Appl. Opt. 49, 229 (2010)] show that even when the Sherif mask and the improved one are optimized, their corresponding defocused modulation transfer functions (MTFs) are still not stable with respect to focus errors. So, by further modifying their phase profiles, we design another two logarithmic phase masks that exhibit more stable defocused MTF. However, with the defocus-induced phase effect considered, we find that the performance of the two masks proposed in this Letter is better than the Sherif mask, but worse than our previously proposed phase mask, according to the Hilbert space angle. (C) 2010 Optical Society of America

Approximate analytical optical transfer function for a wavefront-coded imaging system with two-dimensional rectangularly separable phase masks

Wavefront coding can be used to extend the depth of field of incoherent imaging systems and is a powerful system-level technique. In order to assess the performance of a wavefront-coded imaging system, defocused optical transfer function (OTF) is the metric frequently used. Unfortunately, to the best of our knowledge, among all types of phase masks, it is usually difficult to obtain the analytical OTF except the cubic one. Although numerical computation seems good enough for performance evaluation, the approximate analytical OTF is still indispensable because it can reflect the relationship between mask parameters and system frequency response in a clearer way. Thus, a method is proposed to derive the approximate analytical OTF for two-dimensional rectangularly separable phase masks. The analytical results are well consistent with the direct numerical computations, but the proposed method can be accepted only from engineering point of view and needs rigorous proof in future. (c) 2010 Society of Photo-Optical Instrumentation Engineers. [DOI: 10.1117/1.3485759]

Comprehensive performance analysis of popular odd-symmetric phase masks used for wave-front coded imaging system

(973 Program）No.2009CB724006.

Investigation of the influence of the aberration induced by a plane interface on STED microscopy

The structure of the inhibition patterns is important to the stimulated emission depletion (STED) microscopy. Usually, Laguerre-Gaussian (LG) beam and the central zero-intensity patterns created by inserting phase masks in Gaussian beams are used as the erase beam in STED microscopy. Aberration is generated when focusing beams through an interface between the media of the mismatched refractive indices. By use of the vectorial integral, the effects of such aberration on the shape of depletion patterns and the size of fluorescence emission spot in the STED microscopy are studied. Results are presented as a comparison between the aberration-free case and the aberrated cases. (C) 2009 Optical Society of America

飞秒脉冲时空变换整形技术

飞秒激光脉冲通过时空变换技术将时域信息变换到空域，通过空域的处理再返回到时域，是实现飞秒激光脉冲整形、测量和控制的一项重要技术。在应用方面，可产生各种所需要的波形．已广泛应用在飞秒化学、信号处理、安全通信、生物学和医学成像等方面。介绍了飞秒时空变换脉冲整形的几种方法。

图像深度估计的光学微分方法

讨论了光学微分方法在图像深度估计问题中的应用。基于线性成像理论对Farid提出的光学微分模型进行了推广，即用于图像深度估计的两幅图像在成像过程中可以满足任意阶的线性微分关系。此模型拓宽了光学微分的概念，使两次成像之间关系有了更多的光学微分形式。围绕如何选择合适的光学微分关系以使系统的整体性能达到最优，分析了光学成像系统的参量对于图像深度估计的精度以及纵向分辨力的影响，并且对光学微分方法中的关键光学元件—光学掩模板的构建方法及优化问题也作了初步的探讨。

Fabrication of nano-patterned sapphire substrates and their application to the improvement of the performance of GaN-based LEDs

Nano-patterned sapphire substrates (NPSSs) were fabricated by a chemical wet etching technology using nano-sized SiO2 as masks. The NPSS was applied to improve the performance of GaN-based light emitting diodes (LEDs). GaN-based LEDs on NPSSs were grown by metal organic chemical vapour deposition. The characteristics of LEDs grown on NPSSs and conventional planar sapphire substrates were studied. The light output powers of the LEDs fabricated on NPSSs were considerably enhanced compared with that of the conventional LEDs grown on planar sapphire substrates.

Characteristics of oxide-free InGaAlAs layers grown by narrow stripe selective MOVPE

Narrow stripe selective MOVPE has been used to grow high quality oxide-free InGaAlAs layers on an InP substrate patterned with SiO2 masks at optimized growth conditions. Mirror-like surface morphologies and abrupt cross sections are obtained in all samples without spike growth at the mask edge. For the narrow stripe selectively grown InGaAlAs layers with a mesa width of about 1.2 mu m, a bandgap wavelength shift of 70 nm, a photoluminescence (PL) intensity of more than 80% and a PL full width at half maximum (FWHM) of less than 60 meV are obtained simultaneously with a small mask width variation from 0 to 40 mu m. The characteristics of the thickness enhancement ratio and the PL spectrum dependence on the mask width are presented and explained by considering both the migration effect from a masked region and the lateral vapour diffusion effect.

A novel implantable multichannel silicon-based microelectrode

Silicon-based microelectrodes have been confirmed to be helpful in neural prostheses. The fabricated 7-channel silicon-based microelectrode was feasible to be implanted into the brain cortex. The manufacturing process by microelectromechanical system (MEMS) technology was detailed with four photolithographic masks. The microscopic photographs and SEM images indicated that the probe shank was 3mm long, 100 mu m wide and 20 mu m thick with the recording sites spaced 120 mu m apart for good signal isolation. To facilitate the insertion and minimize the trauma, the microelectrode is narrowed down gradually near the tip with the tip taper angle of 6 degrees. Curve of the single recording site impedance versus frequency was shown by test in vitro and the impedance declined from 150.5 k Omega to 6.0 k Omega with frequency changing from 10 k to 10MHz.

Spatial variation of optical and structural properties of ELO GaN directly grown on patterned sapphire by HVPE

A 275 mu m thick GaN layer was directly grown on the SiO2-prepatterned sapphire in a home-built vertical hydride vapour phase epitaxy (HVPE) reactor. The variation of optical and structure characteristics were microscopically identified using spatially resolved cathodeluminescence and micro-Raman spectroscopy in a cross section of the thick film. The D X-0(A) line with the FWHM of 5.1 meV and etch- pit density of 9 x 10(6) cm(-2) illustrated high crystalline quality of the thick GaN epitaxial layer. Optically active regions appeared above the SiO2 masks and disappeared abruptly due to the tapered inversion domains at 210 - 230 mu m thickness. The crystalline quality was improved by increasing the thickness of the GaN/sapphire interface, but the region with a distance of 2 mu m from the top surface revealed relatively low quality due to degenerate surface reconstruction by residual gas reaction. The x-ray rocking curve for the symmetric (0 0 2) and asymmetric (1 0 2) reflections also showed good quality and a small wing tilt of the epitaxial lateral overgrowth (ELO) GaN.

High-quality multiple quantum wells selectively grown on taper-patterned substrates by ultra-low-pressure MOCVD

High quality InGaAsP/InGaAsP multiple quantum wells ( MQWs) have been selectively grown by ultra-low-pressure (22 mbar) metal-organic chemical vapor deposition. A large bandgap energy shift of 46 nm and photoluminescence with FWHM less than 30 meV were obtained with a rather small mask width variation (15-30 mu m). In order to study the uniformity of the MQWs grown in the selective area, novel tapered masks were employed, and the transition effect W the tapered region was also studied. The energy detuning of the tapered region was observed to be saturated at larger ratios of the mask width to the tapered region length.

High-performance EML grown on taper-masked pattern substrates by ultra-low-pressure MOCVD

A novel in-plane bandgap energy controlling technique by ultra-low pressure (22 mbar) selective area growth (SAG) has been developed. To our knowledge, this is the lowest pressure condition during SAG process ever reported. In this work, high crystalline quality InGaAsP-InP MQWs with a photoluminescence (PL) full-width at half-maximum (FWHM) of less than 35meV are selectively grown on mask-patterned planar InP substrates by ultra-low pressure (22 mbar) metal-organic chemical vapor deposition (MOCVD). In order to study the uniformity of the MQWs grown in the selective area, novel tapered masks are designed and used. Through optimizing growth conditions, a wide wavelength shift of over 80 nm with a rather small mask width variation (0-30 mu m) is obtained. The mechanism of ultra-low pressure SAG is detailed by analyzing the effect of various mask designs and quantum well widths. This powerful technique is then applied to fabricate an electroabsorption-modulated laser (EML). Superior device characteristics are achieved, such as a low threshold current of 19mA and an output power of 7mW. (c) 2005 Elsevier B.V. All rights reserved.

Plasma induced damage in GaN-based light emitting diodes - art. no. 68410X

The effects of plasma induced damage in different conditions of ICP and PECVD processes on LEDs were presented. For ICP mesa etch, in an effort to confirm the effects of dry etch damage on the optical properties of p-type GaN, a photoluminescence (PL) measurement was investigated with different rf chuck power. It was founded the PL intensity of the peak decreased with increasing DC bias and the intensity of sample etched at a higher DC bias of -400V is less by two orders of magnitude than that of the as-grown sample. Meanwhile, In the IN curve for the etched samples with different DC biases, the reverse leakage current of higher DC bias sample was obviously degraded than the lower one. In addition, plasma induced damage was also inevitable during the deposition of etch masks and surface passivation films by PECVD. The PL intensity of samples deposited with different powers sharply decreased when the power was excessive. The PL spectra of samples deposited under the fixed condition with the different processing time were measured, indicating the intensity of sample deposited with a lower power did not obviously vary after a long time deposition. A two-layer film was made in order to improve the compactness of sparse dielectric film deposited with a lower power.