七氟丁酸酐有序超薄膜的制备与结构

在涂敷有聚合物PEI涂层的单晶硅表面上制备了HFBA单层分子膜,接触角测量及XPS结果表明,HFBA在PEI表面产生了化学吸附发生了化学键合(酰胺键),形成了低表面能的HFBA单分子层膜.这一吸附反应的动力学行为可能表现为Langmuir单分子层化学吸附.

Friction and Wear Studies of Octadecyltrichlorosilane SAM on Silicon

A self-assembled monolayer of octadecyltrichlorosilane (OTS) was prepared on a single-crystal silicon wafer (111) and its tribological properties were examined with a one-way reciprocating tribometer. The worn surfaces and transfer film on the counterface were analyzed by means of scanning electron microscopy and X-ray photoelectron spectroscopy. The results show that, due to the wear of the OTS monolayer and the formation of the transfer film on the counterpart ball, the friction coefficient gradually increases from 0.06 to 0.13 with increasing sliding cycles and then keeps stable at a normal load of 0.5N. The transfer film is characterized by deposition, accumulation, and spalling at extended test duration. Though low friction coefficients of the monolayer in sliding against steel or ceramic counterfaces are recorded, poor load-carrying capacity and antiwear ability are also shown. Moreover, the monolayer itself or the corresponding transfer film on the counterface fails to lubricate even at a normal load of 1.0 N. Thus, the self-assembled monolayer of octadecyltrichlorosilane can be a potential boundary lubricant only at very low loads.

Micro- and macro-tribological study on a self-assembled dual-layer film

A novel self-assembled dual-layer film as apotential excellent lubricant for micromachines was successfully prepared on single-crystal silicon substrate by chemical adsorption of stearic acid (STA) molecules on self-assembled monolayer of 3-aminopropyltri

空间液体润滑多孔储油器特性研究

液体润滑普遍存在于大多数空间运动部件中．然而，由于空间环境恶劣（低重力、高真空）所造成的润滑剂严重损失，许多液体润滑运动部件都不能达到其使用寿命的要求．因此，有必要采取措施对空间运动部件进行补油，利用多孔储油器补油便是其中的方法之一．由于其体积小、结构简单而广泛应用于小型航天仪器中，并在维持轴承腔内油膜厚度和油分布方面也能取得令人满意的效果，因此备受关注．离心作用和加热效应是使储油器溢油的两种方法，本文针对这两种方法，对空间多孔储油器的液体润滑剂储运规律进行理论分析，同时设计了离心供油和加热供油两套实验装置．

Effect of the implantation of fluorine on the mobility of channel electron for partially depleted SOI nMOSFET

The mobility of channel electron, for partially depleted Sol nMOSFET in this paper, decreases with the increase of implanted fluorine dose in buried oxide layer. But, the experimental results also show that it is larger for the transistor corresponding to the lowest implantation dose than no implanted fluorine in buried layer. It is explained in tern-is of a "lubricant" model. Mien fluorine atoms are implanted in the top silicon layer, the mobility is the largest. In addition, a positive shift of threshold voltage has also been observed for the transistors fabricated on the Sol wafers processed by the implantation of fluorine. The causes of all the above results are discussed.