Symmetry of chaotic attractors and kink-antikink structures in CMLs

In this paper the symmetries of coupled map lattices (CMLs) and their attractors are investigated by group and dynamical system theory, as well as numerical simulation, by means of which the kink-antikink patterns of CMLs in space-amplitude plots are discussed.

The cellular structure of a two-dimensional H2/O2/Ar detonation wave

In this paper, the cellular structure of a two-dimensional detonation wave in a low pressure H2/O2/Ar mixture calculated with a detailed chemical reaction model, high order scheme and high resolution grids is investigated. The regular cellular structure is produced about 1 ms after introducing perturbations in the reaction zone of a steady one-dimensional detonation wave. It is found from the present resolution study that the discrepancies concerning the structure type arising from the coarser grid employed can be resolved using a sufficiently fine grid size of 0.05 mm and below and shows a double-Mach-like strong-type configuration. During the structure evolution process, the structure configuration does not change much in the periods before and after the triple point collision. Through the triple point collision, three regular collision processes are observed and are followed by a quick change to the double-Mach-like configuration. The simulated structure tracks show that there are three different tracks associated with different triple points or the kink on the transverse wave. Comparisons with previous work and experiments indicate the presence of a strong structure for an ordinary detonation.

A family of interesting exact solutions of the sine-Gordon equation

By using AKNS [Phys. Rev. Lett. 31 (1973) 125] system and introducing the wave function, a family of interesting exact solutions of the sine-Gordon equation are constructed. These solutions seem to be some soliton, kink, and anti-kink ones respectively for the different choice of the spectrum, whereas due to the interaction between two traveling-waves they have some properties different from usual soliton, kink, and anti-kink solutions.

Formation, microstructure and development of the localized shear deformation in low-carbon steels

An investigation has been made into the effect of microstructural parameters on the propensity for forming shear localization produced during high speed torsional testing by split Hopkinson bar with different average rates of 610, 650 and 1500 s(-1) in low carbon steels. These steels received the quenched, quenched and tempered as well as normalized treatments that provide wide microstructural parameters and mechanical properties. The results indicate that the occurrence of the shear localization is susceptible to the strength of the steels. In other words, the tendency of the quenched steel to form a shear band is higher than that of the other two steels. It is also found that there is a critical strain at which the shear localization occurs in the steels. The critical strain value is strongly dependent on the strength of the steels. Before arriving at this point, the material undergoes a slow work-hardening. After this point, the material suffers work-softening, corresponding to a process during which the deformation is gradually localized and eventually becomes spatially correlated to form a macroscopic shear band. Examinations by SEM reveal that the shear localization within the band involves a series of sequential crystallographic and non-crystallographic events including the change in crystal orientation, misorientation, generation and even perhaps damage in microstructures such as the initiation, growth and coalescence of the microcracks. It is expected that the sharp drop in the load-carrying capacity is associated with the growth and coalescence of the microcracks rather than the occurrence of the shear localization, but the shear localization is seen to accelerate the growth and coalescence of the microcracks. The thin foil observations by TEM reveal that the density of dislocations in the band is extremely high and the tangled arrangement and cell structure of dislocations tends to align along the shear direction. The multiplication and interaction of dislocations seems to be responsible for work-hardening of the steels. The avalanche of the dislocation cells corresponds to the sharp drop in shear stress at which the deformed specimen is broken. Double shear bands and kink bands are also observed in the present study. The principal band develops first and its width is narrower than that of the secondary band.

Theoretical and experimental researches of post-micro-buckling for fiber-reinforced composites

Post-microbuckling is a fundamental feature of compressive failure process for the unidirectional-fiber-reinforced composites and laminated composites. The post-microbuckling behavior of composites under compression in the light of the Kevlar49-reinforced 648/BF3.400 (brittle epoxy) and EP (flexible epoxy) is studied, theoretically and experimentally. Analytical results of compressive strength are in good agreement with experimental results, qualitatively and quantitatively. By the experimental research, the post-microbuckling feature of the advancing kink band model is clearly displayed.

The effect of the surface tension on non-propagating solitary waves

In this paper, the effect of the surface tension is considered carefully in the study of non-propagating solitary waves. The parameter plane of the surface tension and the fluid depth is divided into three regions; in two of them a breather soliton can be produced. In literature the parameters of breather solitons are all in one of the parameter regions. The new region reported here has been confirmed by our experiments. In the third region, the theoretical solution is a kink soliton, but a kind of the non-propagating solitary wave similar to the breather soliton was found in our experiments besides the kink soliton.

Instabilities in a grating feedback external cavity semiconductor laser

Output power fluctuations in a grating external cavity diode laser with Littman configuration are described, showing peculiar chaotic behaviors of self-pulsation at the L-I curve kink points. Different spectral characteristics with multiple peaks are observed at upper and lower state of the self-pulsation. It is found also that P-N junction voltage jumps in a same pace with the pulsation. The observed phenomena reflect competition between different longitudinal modes, and transient variation of transverse modes in addition. These experimental results may contain information about the mechanisms of the chaotic instability in strong filtered feedback semiconductor lasers. (C) 2008 Optical Society of America

Effects of techniques of implanting nitrogen into buried oxide on the characteristics of partially depleted SOIPMOSFET

Effects of techniques of implanting nitrogen into buried oxide on the characteristics of the partially depleted silicon-on-insulator (SOI) p-channel metal-oxide-semiconductor field-effect transistors (PMOSFETs) have been studied with three different nitrogen implantation doses, 8 x 10(15), 2 x 10(16), and 1 x 10(17) cm(-2). The experimental results show that this technology can affect the threshold voltage, channel hole mobility and output characteristics of the partially depleted SOI PMOSFETs fabricated with the given material and process. For each type of the partially depleted SOI PMOSFET with nitrided buried oxide, the absolute value of the average threshold voltage increases due to the nitrogen implantation. At the same time, the average channel hole mobility decreases because of the nitrogen implantation. In particular, with the high nitrogen implantation doses, the output characteristic curves of the tested transistors present a distinct kink effect, which normally exists in the characteristic output curves of only partially depleted SOI NMOSFETs.

Effects of the technology of implanting nitrogen into buried oxide layer on the characteristics of partially depleted SOI nMOSFET

The effects, caused by the process of the implantation of nitrogen in the buried oxide layer of SIMOX wafer, on the characteristics of partially depleted silicon-on-insulator nMOSFET have been studied. The experimental results show that the channel electron mobilities of the devices fabricated on the SIMON (separation by implanted oxygen and nitrogen) wafers are lower than those of the devices made on the SIMOX (separation by implanted oxygen) wafers. The devices corresponding to the lowest implantation dose have the lowest mobility within the range of the implantation dose given in this paper. The value of the channel electron mobility rises slightly and tends to a limit when the implantation dose becomes greater. This is explained in terms of the rough Si/SiO2 interface due to the process of implantation of nitrogen. The increasing negative shifts of the threshold voltages for the devices fabricated on the SIMON wafers are also observed with the increase of implanting dose of nitrogen. However, for the devices fabricated on the SIMON wafers with the lowest dose of implanted nitrogen in this paper, their threshold voltages are slightly larger on the average than those prepared on the SIMOX wafers. The shifts are considered to be due to the increment of the fixed oxide charge in SiO2 layer and the change of the density of the interface-trapped charge with the value and distribution included. In particular, the devices fabricated on the SIMON wafers show a weakened kink effect, compared to the ones made on the SIMOX wafers.

Grating optimization and experiment on high-power distributed feedback lasers

Coupling coefficient is an important parameter for distributed feedback lasers. Modified coupled-wave equations are used to calculate the effect of grating shape on coupling coefficient of the second-order gratings. Corresponding devices demonstrate that the maximum kink-free power per facet reaches 50 mW and the sidemode suppression ratio is 36 dB.

High-power AlGaInP laser diodes with current-injection-free region near the laser facet

A high-power AlGaInP laser diode with current-injection-free region near the facet is successfully fabricated by metaorganic chemical vapor deposition (MOCVD) using the (100) direction n-GaAs substrates with a misorientation of 15 deg toward the (011) direction. The maximum continuous wave output power is about 90 mW for the traditional structure. In comparison, the maximum output power is enhanced by about 67%, and achieves 150 mW for LDs with current-infection-free regions. The fundamental transverse-mode operation is obtained up to 70 mW. Output characteristics at high temperatures are also improved greatly for an LD with a current-injection-free region, and the highest operation temperature is 70 C at 50 mW without kink. The threshold current is about 33 mA, the operation current and the slope efficiency at 100 mW are 120 mA and 0.9 mW/mA, respectively. The lasing wavelength is 658.4 nm at room-temperature 50 mW. (c) 2006 Society of Photo-Optical Instrumentation Engineers.

埋氧层注氮工艺对部分耗尽SOI nMOSFET特性的影响

研究了埋氧层中注氮后对制作出的部分耗尽SOInMOSFET的特性产生的影响.实验发现,与不注氮的SIMOX基片相比,由注氮SIMON基片制作的nMOSFET的电子迁移率降低了.且由最低注入剂量的SIMON基片制作的器件具有最低的迁移率.随注入剂量的增加,迁移率略有上升,并趋于饱和.分析认为,电子迁移率的降低是由于Si/SiO2界面的不平整造成的.实验还发现,随氮注入剂量的提高,nMOSFET的阈值电压往负向漂移.但是,对应最低注入剂量的器件阈值电压却大于用SIMOX基片制作出的器件.固定氧化物正电荷及界面陷阱密度的大小和分布的变化可能是导致阈值电压变化的主要因素.另外发现,用注氮基片制作出的部分耗尽SOInMOSFET的kink效应明显弱于用不注氮的SIMOX基片制作的器件.

部分耗尽型SOI CMOS模拟电路设计研究

介绍了部分耗尽型SOI MOS器件浮体状态下的Kink效应及对模拟电路的影响.阐述了4种常用体接触方式及其他消除部分耗尽型SOI MOS器件Kink效应的工艺方法,同时给出了部分耗尽型SOIMOSFET工作在浮体状态下时模拟电路的设计方法.

Nonlinear elastic waves in a monatomic chain with nonlinear interaction

Nonlinear wave equation for a one-dimensional anharmonic crystal lattice in terms of its microscopic parameters is obtained by means of a continuum approximation. Using a small time scale transformation, the nonlinear wave equation is reduced to a combined KdV equation and its single soliton solution yields the supersonic kink form of nonlinear elastic waves for the system.