Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces

The morphological defects and uniformity of 4H-SiC epilayers grown by hot wall CVD at 1500 degrees C on off-oriented (0001) Si faces are characterized by atomic force microscope, Nomarski optical microscopy, and Micro-Raman spectroscopy. Typical morphological defects including triangular defects, wavy steps, round pits, and groove defects are observed in mirror-like SiC epilayers. The preparation of the substrate surface is necessary for the growth of high-quality 4H-SiC epitaxial layers with low-surface defect density under optimized growth conditions. (c) 2006 Elsevier Ltd. All rights reserved.

Polarity dependence of hexagonal GaN films on two opposite c faces of Al2O3 substrate

GaN films were grown in pairs on two opposite c faces of Al2O3 substrate by low-pressure metal-organic vapor phase epitaxy, and studied by scanning electron microscopy and converged beam electron diffraction. It is found that GaN film on the c-Al2O3 whose c face is forward to its crystal seed has [0001] polarity, and the other film on the C-Al2O3 whose c face is backward to its crystal seed has [000 (1) over bar] polarity. (C) 2001 American Institute of Physics.

Research of Face Detection System Applied for Detecting Faces with Complex Background and Illumination

An effective face detection system used for detecting multi pose frontal face in gray images is presented. Image preprocessing approaches are applied to reduce the influence of the complex illumination. Eye-analog pairing and improved multiple related template matching are used to glancing and accurate face detecting, respectively. To shorten the time cost of detecting process, we employ prejudge rules in checking candidate image segments before template matching. Test by our own face database with complicated illumination and background, the system has high calculation speed and illumination independency, and obtains good experimental results.

Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces

The morphological defects and uniformity of 4H-SiC epilayers grown by hot wall CVD at 1500 degrees C on off-oriented (0001) Si faces are characterized by atomic force microscope, Nomarski optical microscopy, and Micro-Raman spectroscopy. Typical morphological defects including triangular defects, wavy steps, round pits, and groove defects are observed in mirror-like SiC epilayers. The preparation of the substrate surface is necessary for the growth of high-quality 4H-SiC epitaxial layers with low-surface defect density under optimized growth conditions. (c) 2006 Elsevier Ltd. All rights reserved.

Homoepitaxial growth and MOS structures of 4H-SiC on off oriented n-type (0001)Si-faces

Homoepitaxial growth of 4H-SiC on off-oriented n-type Si-face (0001) substrates was performed in a home-made hot-wall low pressure chemical vapor deposition (LPCVD) reactor with SiH4 and C2H4 at temperature of 1500 C and pressure of 20 Torr. The surface morphology and intentional in-situ NH3 doping in 4H-SiC epilayers were investigated by using atomic force microscopy (AFM) and secondary ion mass spectroscopy (SIMS). Thermal oxidization of 4H-SiC homoepitaxial layers was conducted in a dry O-2 and H-2 atmosphere at temperature of 1150 C. The oxide was investigated by employing x-ray photoelectron spectroscopy (XPS). 4H-SiC MOS structures were obtained and their C-V characteristics were presented.

Fracture mechanics of piezoelectric materials

This paper presents an analysis of crack problems in homogeneous piezoelectrics or on the interfaces between two dissimilar piezoelectric materials based on the continuity of normal electric displacement and electric potential across the crack faces. The explicit analytic solutions are obtained for a single crack in an infinite piezoelectric or on the interface of piezoelectric bimaterials. For homogeneous materials it is found that the normal electric displacement D-2, induced by the crack, is constant along the crack faces which depends only on the remote applied stress fields. Within the crack slit, the perturbed electric fields induced by the crack are also constant and not affected by the applied electric displacement fields. For bimaterials, generally speaking, an interface crack exhibits oscillatory behavior and the normal electric displacement D-2 is a complex function along the crack faces. However, for bimaterials, having certain symmetry, in which an interface crack displays no oscillatory behavior, it is observed that the normal electric displacement D-2 is also constant along the crack faces and the electric field E-2 has the singularity ahead of the crack tip and has a jump across the interface. Energy release rates are established for homogeneous materials and bimaterials having certain symmetry. Both the crack front parallel to the poling axis and perpendicular to the poling axis are discussed. It is revealed that the energy release rates are always positive for stable materials and the applied electric displacements have no contribution to the energy release rates.

Perturbational Finite Volume Method For The Solution of 2-D Navier-Stokes Equations on Unstructured and Structured Colocated Meshes

Based on the first-order upwind and second-order central type of finite volume( UFV and CFV) scheme, upwind and central type of perturbation finite volume ( UPFV and CPFV) schemes of the Navier-Stokes equations were developed. In PFV method, the mass fluxes of across the cell faces of the control volume (CV) were expanded into power series of the grid spacing and the coefficients of the power series were determined by means of the conservation equation itself. The UPFV and CPFV scheme respectively uses the same nodes and expressions as those of the normal first-order upwind and second-order central scheme, which is apt to programming. The results of numerical experiments about the flow in a lid-driven cavity and the problem of transport of a scalar quantity in a known velocity field show that compared to the first-order UFV and second-order CFV schemes, upwind PFV scheme is higher accuracy and resolution, especially better robustness. The numerical computation to flow in a lid-driven cavity shows that the under-relaxation factor can be arbitrarily selected ranging from 0.3 to 0. 8 and convergence perform excellent with Reynolds number variation from 102 to 104.

Weak Zone Related Seismic Cycles in Progressive Failure Leading to Collapse in Brittle Crust

Until quite recently our understanding of the basic mechanical process responsible for earthquakes and faulting was not well known. It can be argued that this was partly a consequence of the complex nature of fracture in crust and in part because evidence of brittle phenomena in the natural laboratory of the earth is often obliterated or obscured by other geological processes. While it is well understood that the spatial and temporal complexity of earthquakes and the fault structures emerge from geometrical and material built-in heterogeneities, one important open question is how the shearing becomes localized into a band of intense fractures. Here the authors address these questions through a numerical approach of a tectonic plate by considering rockmass heterogeneity both in microscopic scale and in mesoscopic scale. Numerical simulations of the progressive failure leading to collapse under long-range slow driving forces in the far-field show earthquake-like rupture behavior. $En Echelon$ crack-arrays are reproduced in the numerical simulation. It is demonstrated that the underlying fracturing induced acoustic emissions (or seismic events) display self-organized criticality------from disorder to order. The seismic cycles and the geometric structures of the fracture faces, which are found greatly depending on the material heterogeneity (especially on the macroscopic scale), agree with that observed experimentally in real brittle materials. It is concluded that in order to predict a main shock, one must have extremely detailed knowledge on very minor features of the earth's crust far from the place where the earthquake originated. If correct, the model proposed here seemingly provides an explanation as to why earthquakes to date are not predicted so successfully. The reason is not that the authors do not understand earthquake mechanisms very well but that they still know little about our earth's crust.

Asymptotic analysis for a crack on interface of damaged materials

An asymptotic analysis for a crack lying on the interface of a damaged plastic material and a linear elastic material is presented in this paper. The present results show that the stress distributions along the crack tip are quite similar to those with HRR singularity field and the crack faces open obviously. Material constants n, mu and mo are varied to examine their effects on the resulting stress distributions and displacement distributions in the damaged plastic region. It is found that the stress components sigma(rr), sigma(theta theta), sigma(r theta) and sigma(e) are slightly affected by the changes of material constants n, mu and m(0), but the damaged plastic region are greatly disturbed by these material parameters.

Crack problems of piezoelectric materials

This paper presents an analysis of crack problems in homogeneous piezoelectrics or on the interfaces between two dissimilar piezoelectric materials based on the continuity of normal electric displacement and electric potential across the crack faces. The explicit analytic solutions are obtained for a single crack in piezoelectrics or on the interfaces of piezoelectric bimaterials. A class of boundary problems involving many cracks is also solved. For homogeneous materials it is found that the normal electric displacement D-2 induced by the crack is constant along the crack faces which depends only on the applied remote stress field. Within the crack slit, the electric fields induced by the crack are also constant and not affected by the applied electric field. For the bimaterials with real H, the normal electric displacement D-2 is constant along the crack faces and electric field E-2 has the singularity ahead of the crack tip and a jump across the interface.

Stress intensity factor histories of a steadily propagating crack under 3-D combined mode traction

Elastodynamic stress intensity factor histories of an unbounded solid containing a semi-infinite plane crack that propagates at a constant velocity under 3-D time-independent combined mode loading are considered. The fundamental solution, which is the response of point loading, is obtained. Then, stress intensity factor histories of a general loading system are written out in terms of superposition integrals. The methods used here are the Laplace transform methods in conjunction with the Wiener-Hopf technique.

Lattice type of fracture model for concrete

Concrete is usually described as a three-phase material, where matrix, aggregate and interface zones are distinguished. The beam lattice model has been applied widely by many investigators to simulate fracture processes in concrete. Due to the extremely large computational effort, however, the beam lattice model faces practical difficulties. In our investigation, a new lattice called generalized beam (GB) lattice is developed to reduce computational effort. Numerical experiments conducted on a panel subjected to uniaxial tension show that the GB lattice model can reproduce the load-displacement curves and crack patterns in agreement to what are observed in tests. Moreover, the effects of the particle overlay on the fracture process are discussed in detail. (C) 2007 Elsevier Ltd. All rights reserved.

Micromechanics analyses of interface crack

A new mechanics model based on Peierls concept is presented in this paper, which can clearly characterize the intrinsic features near a tip of an interfacial crack. The stress and displacement fields are calculated under general combined tensile and shear loadings. The near tip stress fields show some oscillatory behaviors but without any singularity and the crack faces open completely without any overlapping when remote tensile loading is comparable with remote shear loading. A fracture criterion for predicting interface toughness has been also proposed, which takes into account for the shielding effects of emitted dislocations. The theoretical toughness curve gives excellent prediction, as compared with the existing experiment data.

Elastodynamic stress-intensity factors for a semiinfinite crack under 3-d combined mode loading

The dynamic stress intensity factor histories for a half plane crack in an otherwise unbounded elastic body are analyzed. The crack is subjected to a traction distribution consisting of two pairs of suddenly-applied shear point loads, at a distance L away from the crack tip. The exact expression for the combined mode stress intensity factors as the function of time and position along the crack edge is obtained. The method of solution is based on the direct application of integral transforms together with the Wiener-Hopf technique and the Cagniard-de Hoop method, which were previously believed to be inappropriate. Some features of solutions are discussed and the results are displayed in several figures.