Relationship between the continually expanded interlayer distance of layered silicates and excess intercalation of cationic surfactants

Excess intercalation of cationic surfactants into Na-montmorillonites (MMTs) was investigated in organically modified silicates (OMSs), synthesized with MMTs and octadecylammonium chloride (OAC) by systematically varying the surfactant loading level from 0.625 to 1, 1.25, 1.56, 2, and 2.5 with respect to the cation exchange capacity (CEC) of MMTs. Wide-angle X-ray diffraction and thermogravimetric analysis results indicated that the continuous increase of interlayer distances came from the entering of surfactants into the interlayer of MMTs. Excess surfactants were extracted with a Soxhlet apparatus, which showed two kinds of intercalation states of surfactants in the interlayer when the surfactant loading level was beyond the CEC. Fourier transform infrared spectroscopy and differential scanning calorimetry were used to explore the microstructures of OMSs. It was found that the surfactants arranged more orderly as the loading level increased and the excess surfactants piled up in the interlayer together with counterions, forming a sandwiched surfactant layer. On the basis of the results, the layer structures of OMSs and the mechanism by which the surfactants entered the interlayer were expounded: surfactant cations entered the interlayer through cation exchange reactions and were tightly attracted to the silicate platelet surfaces when the surfactant loading level was below the CEC;

Exfoliation of Organically Modified Montmorillonite Driven by Molecular Diffusion in Maleated Polypropylene

This work is focused on the factors influencing the intercalation of maleated polypropylene (PPMA) into organically modified montmorillonite (OMMT). Two kinds of PPMA were used to explore the optimal candidate for effective intercalation into OMMT. The grafting degree of maleic anhydride and the viscosity of PPMA have effects on the diffusion of polymer molecules. Moreover, the loading level of surfactant was varied to optimize the modification of montmorillonite because the appropriate loading level can provide a balance between interlayer distance and steric hindrance. The kind of surfactant changes the interaction between OMMT and PPMA, and accordingly the intercalation of PPMA is different, resulting in the discrepancy of the intercalation of PPMA.

Dynamic behavior of a cylindrical crack in a functionally graded interlayer under torsional loading

In this paper the problem of a cylindrical crack located in a functionally graded material (FGM) interlayer between two coaxial elastic dissimilar homogeneous cylinders and subjected to a torsional impact loading is considered. The shear modulus and the mass density of the FGM interlayer are assumed to vary continuously between those of the two coaxial cylinders. This mixed boundary value problem is first reduced to a singular integral equation with a Cauchy type kernel in the Laplace domain by applying Laplace and Fourier integral transforms. The singular integral equation is then solved numerically and the dynamic stress intensity factor (DSIF) is also obtained by a numerical Laplace inversion technique. The DSIF is found to rise rapidly to a peak and then reduce and tend to the static value almost without oscillation. The influences of the crack location, the FGM interlayer thickness and the relative magnitudes of the adjoining material properties are examined. It is found among others that, by increasing the FGM gradient, the DSIF can be greatly reduced.

Dependence of collision frequency on distance between two hard-sphere particles estimated by computer simulation

A Monte Carlo simulation is performed to study the dependence of collision frequency on interparticle distance for a system composed of two hard-sphere particles. The simulation quantitatively shows that the collision frequency drops down sharply as the distance between two particles increases. This characteristic provides a useful evidence for the collision-reaction dynamics of aggregation process for the two-particle system described in the other reference.

Torsional impact response of a penny-shaped interface crack in bonded materials with a graded material interlayer

In this paper, the dynamic response of a penny-shaped interface crack in bonded dissimilar homogeneous half-spaces is studied. It is assumed that the two materials are bonded together with such a inhomogeneous interlayer that makes the elastic modulus in the direction perpendicular to the crack surface is continuous throughout the space. The crack surfaces art assumed to be subjected to torsional impact loading. Laplace and Hankel integral transforms are applied combining with a dislocation density,function to reduce the mixed boundary value problem into a singular integral equation with a generalized Cauchy kernel in Laplace domain. By solving the singular integral equation numerically, and using a numerical Laplace inversion technique, the dynamic stress intensity factors art obtained. The influences of material properties and interlayer thickness on the dynamic stress intensity factor are investigated.

Estimation of Correlation Distance of Soil Properties by Geostatistics

Random field theory has been used to model the spatial average soil properties, whereas the most widely used, geostatistics, on which also based a common basis (covariance function) has been successfully used to model and estimate natural resource since 1960s. Therefore, geostistics should in principle be an efficient way to model soil spatial variability Based on this, the paper presents an alternative approach to estimate the scale of fluctuation or correlation distance of a soil stratum by geostatistics. The procedure includes four steps calculating experimental variogram from measured data, selecting a suited theoretical variogram model, fitting the theoretical one to the experimental variogram, taking the parameters within the theoretical model obtained from optimization into a simple and finite correlation distance 6 relationship to the range a. The paper also gives eight typical expressions between a and b. Finally, a practical example was presented for showing the methodology.

Self-adaptive optical systems for long-distance flying optics

The focusing characteristics of long-distance flying optics were studied systemically for TEMmn Gaussian beams. The results show that the ABCD law of parameter q can be extended to Gaussian modes of any order when waist radius w in the imaginary part of parameter q is replaced by Rayleigh range Z(R) of a certain resonator in the equation. The difference between the real focal length and the geometric focal length, defined as Delta f, was calculated for laser applications. A novel self-adaptive optical system was demonstrated for precisely controlling the focusing characteristics of long-distance flying optics, Theoretical analyses and experimental results were consistent. (c) 2006 Optical Society of America.

Influence of Cr interlayer on the structure and optical properties of Ag films on glass substrate by magnetron sputtering

Optical properties and microstructure of Ag film on glass substrate with Cr intermediate layer were studied by using spectrophotometer and XRD. The spectra results showed that introducing Cr intermediate layer reduced the surface roughness and promoted the reflectivity of Ag film. The XRD analysis showed that the crystalline grains increased and the stress decreased. The adhesion was also improved by using the tape test method. (c) 2006 Published by Elsevier B.V.

Estimated detection distance of a baiji's (Chinese river dolphin, Lipotes vexillifer) whistles using a passive acoustic survey method

Source levels and phonation intervals of whistles produced by a free-ranging baiji (Chinese river dolphin) were measured in the seminatural reserve of Shishou in Hubei, China. A total of 43 whistles were recorded over 12 recording sessions. The mean dominant frequency (the frequency at the highest energy) was 5.7 kHz (s.d.=0.67). The calculated source level was 143.2 dB rms re 1 mu Pa (s.d.=5.8). Most phonation intervals were shorter than 460 s, and the average interval was 205 s (s.d. = 254). Theoretical detection range of baiji's whistle was 6600 m at the present study site, but it could reduce a couple of hundred meters in practical noisy situation in the Yangtze River. Sporadic phonation (205 s interval on average) with relatively faint signal of baiji was considered, to be difficult to be detected by a towing hydrophone system. Stationed monitoring or slow speed towing of hydrophones along the river current is recommended. (c) 2006 Acoustical Society of America.

Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer

We present the growth of GaN epilayer on Si (111) substrate with a single AlGaN interlayer sandwiched between the GaN epilayer and AlN buffer layer by using the metalorganic chemical vapour deposition. The influence of the AlN buffer layer thickness on structural properties of the GaN epilayer has been investigated by scanning electron microscopy, atomic force microscopy, optical microscopy and high-resolution x-ray diffraction. It is found that an AlN buffer layer with the appropriate thickness plays an important role in increasing compressive strain and improving crystal quality during the growth of AlGaN interlayer, which can introduce a more compressive strain into the subsequent grown GaN layer, and reduce the crack density and threading dislocation density in GaN film.

High-temperature AlN interlayer for crack-free AlGaN growth on GaN

This paper presents a study of the transformation of high-temperature AlN (HT-AlN) interlayer (IL) and its effect on the strain relaxation of Al0.25Ga0.75N/HT-AlN/GaN. The HT-AlN IL capped with Al0.25Ga0.75N transforms into AlGaN IL in which the Al composition increases with the HT-AlN IL thickness while the total Ga content keeps nearly constant. During the HT-AlN IL growth on GaN, the tensile stress is relieved through the formation of V trenches. The filling up of the V trenches by the subsequent Al0.25Ga0.75N growth is identified as the Ga source for the IL transformation, whose effect is very different from a direct growth of HT-AlGaN IL. The a-type dislocations generated during the advancement of V trenches and their filling up propagate into the Al0.25Ga0.75N overlayer. The a-type dislocation density increases dramatically with the IL thickness, which greatly enhances the strain relaxation of Al0.25Ga0.75N. (c) 2008 American Institute of Physics.

The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure

The sheet carrier concentrations, conduction band profiles and amount of free carriers in the barriers have been determined by solving coupled Schrodinger and Poisson equation self-consistently for coherently grown Al0.3Ga0.7N/GaN and Al0.3Ga0.7N/AlN/GaN structures on thick GaN. The Al0.3Ga0.7N/GaN heterojunction structures with and without 1 nm AlN interlayer have been grown by MOCVD on sapphire substrate, the physical properties for these two structures have been investigated by various instruments such as Hall measurement and X-ray diffraction. By comparison of the theoretical and experimental results, we demonstrate that the sheet carrier concentration and the electrons mobility would be improved by the introduction of an AlN interlayer for Al0.3Ga0.7N/GaN structure. Mechanisms for the increasing of the sheet carrier concentration and the electrons mobility will be discussed in this paper. (C) 2007 Elsevier Ltd. All rights reserved.

Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)

Crack-free GaN films have been achieved by inserting an Indoped low-temperature (LT) AlGaN interlayer grown on silicon by metalorganic chemical vapor deposition. The relationship between lattice constants c and a obtained by X-ray diffraction analysis shows that indium doping interlayer can reduce the stress in GaN layers. The stress in GaN decreases with increasing trimethylindium (TMIn) during interlayer growth. Moreover, for a smaller TMIn flow, the stress in GaN decreases dramatically when In acts as a surfactant to improve the crystallinity of the AlGaN interlayer, and for a larger TMIn flow, the stress will increase again. The decreased stress leads to smoother surfaces and fewer cracks for GaN layers by using an In-doped interlayer than by using an undoped interlayer. In doping has been found to enhance the lateral growth and reduce the growth rate of the c face. It can explain the strain relief and cracks reduction in GaN films. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.