35 resultados para Industrial Automation

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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在分析建筑高能耗原因的基础上,提出了一个基于WIA的建筑能耗测量与优化运行方案,详细介绍了该方案的结构组成和原理。

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在分析现有的储油罐区监测技术的基础上,提出了一个基于工业无线网络WIA技术的储油罐监测系统方案,详细介绍了该方案的系统运行原理、系统结构及系统功能。

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在分析现有的管道泄漏监测技术的基础上,提出了一个基于工业无线网络WIA技术的管道泄漏监测系统方案,详细介绍了该方案的系统运行原理、系统结构及系统性能及特点。

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应用传统现场总线的工业控制网络无法实现办公室自动化与工业自动化的无缝结合 .由于以太网在确定性、速度和优先法则等方面性能的提高 ,阻碍以太网应用于实时控制环境的难点已被解决 .以太网早已成为商业管理网络的首要选择 ,那么它应用于企业现场设备控制层是控制网络发展的趋势 ,将极大地促进信息从传感器到管理层的集成

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Association for Computing Machinery, ACM; IEEE; IEEE Computer Society; SIGSOFT

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Czochralski (CZ) crystal growth process is a widely used technique in manufacturing of silicon crystals and other semiconductor materials. The ultimate goal of the IC industry is to have the highest quality substrates, which are free of point defect, impurities and micro defect clusters. The scale up of silicon wafer size from 200 mm to 300 mm requires large crucible size and more heat power. Transport phenomena in crystal growth processes are quite complex due to melt and gas flows that may be oscillatory and/or turbulent, coupled convection and radiation, impurities and dopant distributions, unsteady kinetics of the growth process, melt crystal interface dynamics, free surface and meniscus, stoichiometry in the case of compound materials. A global model has been developed to simulate the temperature distribution and melt flow in an 8-inch system. The present program features the fluid convection, magnetohydrodynamics, and radiation models. A multi-zone method is used to divide the Cz system into different zones, e.g., the melt, the crystal and the hot zone. For calculation of temperature distribution, the whole system inside the stainless chamber is considered. For the convective flow, only the melt is considered. The widely used zonal method divides the surface of the radiation enclosure into a number of zones, which has a uniform distribution of temperature, radiative properties and composition. The integro-differential equations for the radiative heat transfer are solved using the matrix inversion technique. The zonal method for radiative heat transfer is used in the growth chamber, which is confined by crystal surface, melt surface, heat shield, and pull chamber. Free surface and crystal/melt interface are tracked using adaptive grid generation. The competition between the thermocapillary convection induced by non-uniform temperature distributions on the free surface and the forced convection by the rotation of the crystal determines the interface shape, dopant distribution, and striation pattern. The temperature gradients on the free surface are influenced by the effects of the thermocapillary force on the free surface and the rotation of the crystal and the crucible.