Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization

Silicon carbide bulk crystals were grown in an induction-heating furnace using the physical vapor transport method. Crystal growth modeling was performed to obtain the required inert gas pressure and temperatures for sufficiently large growth rates. The SiC crystals were expanded by designing a growth chamber having a positive temperature gradient along the growth interface. The obtained 6H-SiC crystals were cut into wafers and characterized by Raman scattering spectroscopy and X-ray diffraction, and the results showed that most parts of the crystals had good crystallographic structures.

Numerical Simulation of Heat Transfer and Kinetics in the Bulk Growth of Silicon Carbide

The growth process of 2-inch silicon carbide (SiC) single crystals by the physical vapor transport method (or modified Lely method) has been modeled and simulated. The comprehensive process model incorporates the calculations of radio frequency (RF) induction heating, heat and mass transfer and growth kinetics. The transport equations for electromagnetic field, heat transfer, and species transport are solved using a finite volume-based numerical scheme called MASTRAPP (Multizone Adaptive Scheme for Transport and Phase Change Process). Temperature distribution for a 2-inch growth system is calculated, and the effects of induction heating frequency and current on the temperature distribution and growth rate are investigated. The predicted results have been compared with the experimental data.

Control of Large-size SiC Growth Process Using Modeling tool

Large size bulk silicon carbide (SiC) crystals are commonly grown by the physical vapor transport (PVT) method. The PVT growth of SiC crystals involves sublimation and condensation, chemical reactions, stoichiometry, mass transport, induced thermal stress, as well as defect and micropipes generation and propagation. The quality and polytype of as-grown SiC crystals are related to the temperature distribution inside the growth chamber during the growth process, it is critical to predict the temperature distribution from the measured temperatures outside the crucible by pyrometers. A radio-frequency induction-heating furnace was used for the growth of large-size SiC crystals by the PVT method in the present study. Modeling and simulation have been used to develop the SiC growth process and to improve the SiC crystal quality. Parameters such as the temperature measured at the top of crucible, temperature measured at the bottom of the crucible, and inert gas pressure are used to control the SiC growth process. By measuring the temperatures at the top and bottom of the crucible, the temperatures inside the crucible were predicted with the help of modeling tool. SiC crystals of 6H polytype were obtained and characterized by the Raman scattering spectroscopy and SEM, and crystals of few millimeter size grown inside the crucible were found without micropipes. Expansion of the crystals were also performed with the help of modeling and simulation.

Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization

Silicon carbide bulk crystals were grown in an induction-heating furnace using the physical vapor transport method. Crystal growth modeling was performed to obtain the required inert gas pressure and temperatures for sufficiently large growth rates. The SiC crystals were expanded by designing a growth chamber having a positive temperature gradient along the growth interface. The obtained 6H-SiC crystals were cut into wafers and characterized by Raman scattering spectroscopy and X-ray diffraction, and the results showed that most parts of the crystals had good crystallographic structures.

Effect of Cold Rolling Ratio and Heating Rate of Batch Annealing on Textures of Micro-Carbon Steel Sheet

在四辊冷轧试验机和Gleeble-1500试验机上进行了热轧微碳钢板的冷轧和退火试验。用D/max-RC衍射仪测量了试样的,/”层织构,并用Roe软件进行了ODF分析。研究表明,所研究的热轧微碳深冲板压下率约为75%,退火升温速度为20-40℃/h时,试样为{111}织构特征；压下率较大(80%)时,退火织构为较弱的{111}组分。无论{111}织构还是非{111}织构都是在形核阶段开始形成,在晶粒长大优先长大,受到定向形核和选择生长双重机制的作用。

Gasdynamic Heating Process Suitable for Manufacturing Ethene by Pyrolysis

对乙烷裂解制造乙烯的非平衡过程进行了分析,为了获得高的乙烯产率,需准确控制裂解停留时间并提高裂解反应温度,探讨了目前工业生产中普遍采用的管式裂解炉的特性及局限,这种管式裂解炉的性能虽己接近完善,但仍不能满足裂解工艺需求,对几种利用激波控制加热方法生产乙烯的发明及其不足进行了评述,提出新颖的反向超声速射流混合加热方法,该方法能满足裂解制造乙烯的要求。

Analysis of ingredient and heating value of municipal solid waste

Great differences between municipal solid wastes(MSW)produced at different places and different times in terms of such parameters as physical ingredient and heating value lead to difficulty in effective handling of MSW. In this paper, ingredient, heating value and their temporal varying trends of typical MSW in Beijing were continuously measured and analyzed. With consideration of the process in pyrolysis and incineration, correlation between physical ingredients and heating values was induced, favorable for evaluation of heating value needed in handling of MSW from simple analysis of physical ingredients of it.

Heating characteristics of blunt swept fin-induced shock wave turbulent boundary layer interaction

An experimental study was conducted on shock wave turbulent boundary layer interactions caused by a blunt swept fin-plate configuration at Mach numbers of 5.0, 7.8, 9.9 for a Reynolds number range of (1.0.similar to 4.7) x 10(7)/m. Detailed heat transfer and pressure distributions were measured at fin deflection angles of up to 30 degrees for a sweepback angle of 67.6 degrees. Surface oil flow patterns and liquid crystal thermograms as well as schlieren pictures of fin shock shape were taken. The study shows that the flow was separated at deflection of 10 degrees and secondary separation were detected at deflection of theta greater than or equal to 20 degrees. The heat transfer and pressure distributions on flat plate showed an extensive plateau region followed by a distinct dip and local peak close to the fin foot. Measurements of the plateau pressure and heat transfer were in good agreement with existing prediction methods, but pressure and heating peak measurements at M greater than or equal to 6 were significantly lower than predicted by the simple prediction techniques at lower Mach numbers.

Measurement of Microscopic Deformation in a Cualni Single Crystal Alloy by Nanoindentation with a Heating Stage

Thermally induced recovery of nanoindents in a CUAINi single crystal shape memory alloy was studied by nanoindentation in conjunction with a heating stage. Nanoindents formed by a Berkovich indenter at room temperature were heated to 40, 70 and 100 degrees C. Partial recovery was observed for the nanoindents. The recovery ratio depended on the heating temperature. Indentation of CuAlNi can induce inelastic deformation via dislocation motion and a stress-induced matensitic transformation. The percentages of dislocation-induced plastic strain would affect the thermal deformation of CuAlNi, because the induced dislocations could stabilize stress-induced martensite plates even when the temperature above austenite finish temperature, A(f). When the applied indentation load is low (less than 10,000 mu N), the shape recovery strain is predominant, compared with the dislocation-induced plastic strain. Therefore, the degree of indent recovery in the depth direction, delta(D), is high (about 0.7-0.8 at 100 degrees C).

Theoretical interpretation on ion heating experiments in reverse field pinch devices

A new set of equations for the energies of the mean magnetic field and the mean plasma velocity is derived taking the dynamo effects into account, by which the anomalous phenomenon, T(i) > T(e), observed in some reversed field pinches (RFP's) is successfully explained.

Heating, current drive and confinement regimes with the JET ICRH and lhcd systems

During its 1990 operation, 2 large RF systems were available on JET. The Ion Cyclotron Resonance Heating (ICRH) system was equipped with new beryllium screens and with feedback matching systems. Specific impurities generated by ICRH were reduced to negligible levels even in the most stringent H-mode conditions. A maximum power of 22 MW was coupled to L-mode plasmas. High quality H-modes (tau-E greater-than-or-equal-to 2.5 tau-EG) were achieved using dipole phasing. A new high confinement mode was discovered. It combines the properties of the H-mode regime to the low central diffusivities obtained by pellet injection. A value of n(d) tau-E T(i) = 7.8 x 10(20) m-3 s keV was obtained in this mode with T(e) approximately T(i) approximately 11 keV. In the L-mode regime, a regime, a record (140 kW) D-He-3 fusion power was generated with 10 - 14 MW of ICRH at the He-3 cyclotron frequency. Experiments were performed with the prototype launcher of the Lower Hybrid Current Drive (LHCD) systems with coupled power up to 1.6 MW with current drive efficiencies up to < n(e) > R I(CD)/P = 0.4 x 10(20) m-2 A/W. Fast electrons are driven by LHCD to tail temperatures of 100 keV with a hollow radial profile. Paradoxically, LHCD induces central heating particularly in combination with ICRH. Finally we present the first observations of the synergistic acceleration of fast electrons by Transit Time Magnetic Pumping (TTMP) (from ICRH) and Electron Landau Damping (ELD) (from LHCD). The synergism generates TTMP current drive even without phasing the ICRH antennae.

The induction plasma chemical reactor: Part I. Equilibrium model

A mathematical model is presented for the numerical simulation of the flow, temperature, and concentration fields in an rf plasma chemical reactor. The simulation is performed assuming chemical equilibrium. The extent of validity of this assumption is discussed. The system considered is the reaction of SiCl4 and NH3 for the production of Si3N4.

The induction plasma chemical reactor: Part II. Kinetic model

A kinetic model has been developed for the prediction of the concentration gelds in an rf plasma reactor. A sample calculation for a SiCl4/H2 system is then performed. The model considers the mixing processes along with the kinetics of seven reactions involving the decomposition of these reactants. The results obtained are compared to those assuming chemical equilibrium. The predictions indicate that an equilibrium assumption will result in lower predicted temperature fields in the reactor. Furthermore, for the chemical system considered here, while differences exist between the concentration fields obtained by the two models, the differences are not substantial.