7 resultados para Image characteristics

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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Compared with other existing methods, the feature point-based image watermarking schemes can resist to global geometric attacks and local geometric attacks, especially cropping and random bending attacks (RBAs), by binding watermark synchronization with salient image characteristics. However, the watermark detection rate remains low in the current feature point-based watermarking schemes. The main reason is that both of feature point extraction and watermark embedding are more or less related to the pixel position, which is seriously distorted by the interpolation error and the shift problem during geometric attacks. In view of these facts, this paper proposes a geometrically robust image watermarking scheme based on local histogram. Our scheme mainly consists of three components: (1) feature points extraction and local circular regions (LCRs) construction are conducted by using Harris-Laplace detector; (2) a mechanism of grapy theoretical clustering-based feature selection is used to choose a set of non-overlapped LCRs, then geometrically invariant LCRs are completely formed through dominant orientation normalization; and (3) the histogram and mean statistically independent of the pixel position are calculated over the selected LCRs and utilized to embed watermarks. Experimental results demonstrate that the proposed scheme can provide sufficient robustness against geometric attacks as well as common image processing operations. (C) 2010 Elsevier B.V. All rights reserved.

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During the process of lysozyme protein crystallization with batch method, the macroscopic flow field of solid/liquid system was observed by particle image velocimetry (PIV). Furthermore, a normal growth rate of (110) face and local flow field around a single protein crystal were obtained by a long work distance microscope. The experimental results showed that the average velocity, the maximal velocity of macroscopic solid/liquid system and the velocity of local flow field around single protein crystal were fluctuant. The effective boundary layer thickness delta(eff), the concentration at the interface Q and the characteristic velocity V were calculated using a convection-diffusion model. The results showed that the growth of lysozyme crystal in this experiment was dominated by interfacial kinetics rather than bulk transport, and the function of buoyancy-driven flow in bulk transport was small, however, the effect of bulk transport in crystal growth had a tendency to increase with the increase of lysozyme concentration. The calculated results, also showed that the order of magnitude of shear force was about 10(-21) N, which was much less than the bond force between the lysozyme molecules. Therefore the shear force induced by buoyancy-driven flows cannot remove the protein molecules from the interface of crystal.

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The spray of emulsified fuel, composed of diesel fuel, water and methanol can make micro-explosion under high temperature conditions, and the viscosity and the atomization characteristics of emulsion have significant effects on the micro- explosion of emulsions. To clarify the combustion mechanism of water-in-oil emulsion sprays, combustion bomb experiments were carried out, and the droplet group micro- explosions in W/O fuel emulsion sprays in a high-pressure, high-temperature bomb were observed clearly by a multi-pulsed, off-axis, image-plane ruby laser holocamera and continuously by a high-speed CCD camera.The viscosity and atomization characteristics of emulsions were also studied experimentally. The experimental results show that the higher concentration of the aqueous phase (water-methanol) (<50%) increases the viscosity of the emulsions, especially for higher agent concentration, and higher aqueous phase concentration and higher viscosity results in lager Sauter Mean Diameter (SMD). The experiment results also show that the different kinds of emulsifying agents, with different Hydrophile-Lipophile Balance (HLB) values, have significant influence on the viscosity of the emulsions.

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The epitaxial growth of AlxGa1-xN film with high Al content by metalorganic chemical vapor deposition (MOCVD) has been accomplished. The resulting Al content was determined to be 54% by high resolution X-ray diffraction (HRXRD) and Vegard's law. The full width at half maximum (FWHM) of the AlGaN (0002) HRXRD rocking curve was about 597 arcsec. Atomic force microscopy (AFM) image showed a relatively rough surface with grain-like islands, mainly coming from the low surface mobility of adsorbed Alspecies. From transmittance measurement, the cut-off wavelength was around 280 nm and Fabry-Perot fringes were clearly visible in the transmission region. Cathodoluminescence (CL) measurement indicated that there existed a uniformity in the growth direction and a non-uniformity in the lateral direction. (C) 2007 Elsevier Ltd. All rights reserved.

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The reverse I(V) measurement and analytic calculation of the electron transport across a Ti/6H-SiC Schottky barrier are presented. Based on the consideration of the barrier fluctuations and the barrier height shift caused by image charge and the applied voltage drop across Ti/SiC interfical layer, a comprehensive analytical model for the reverse tunneling current is developed using a WKB calculation of the tunneling probability through a reverse biased Schottky barrier. This model takes into account the main reverse conduction mechanism, such as field emission, thermionic field emission and thermionic emission. The fact that the simulated results are in good agreement with the experimental data indicates that the barrier height shift and barrier fluctuation can lead to reverse current densities orders of magnitude higher than that obtained from a simple theory. It is shown that the field and thermionic field emission processes, in which carries can tunnel through the barrier but cannot surmount it with insufficient thermal energy, dominate the reverse characteristics of a SiC Schottky contacts in a normal working condition.

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Structural and optical investigations of InAs QDs grown on GaAs (3 1 1)A by molecular beam epitaxy (MBE) were reported. InAs/GaAs (3 1 1)A QDs with nonconventional, faceted, arrowhead-like shapes aligned in the [ - 2 3 3] direction have been disclosed by AFM image. Low defect and dislocation density on the QDs interfaces were indicated by the linear dependence of photoluminescence (PL) intensity on the excitation power. The fast red shift of PL energy and the monotonic decrease of FWHM with increasing temperature were observed and explained by carriers being thermally activated to the energy barrier produced by the wetting layer and then retrapped and recombined in energetically low-lying QDs states. (C) 1999 Elsevier Science B.V. All rights reserved.

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Thermally stable high-resistivity regions have been formed using hydrogen ion implantation at three energies (50, 100, and 180 keV) with three corresponding doses (6 X 10(14) 1.2 X 10(15), and 3 X 10(15) cm(-2)), oxygen implantation at 280keV with 2 X 10(14) cm(-2) as well as subsequent annealing at about 600 degrees C for 10-20s, in AlGaAs/GaAs multiple epitaxial heterojunction structure. After anncaling at 600 degrees C, the sheet resistivity increases by six orders more of magnitude from the as-grown values. This creation of high resistivity is different from that of the conventional damage induced isolation by H or O single implantation which becomes ineffective when anneal is carried out at 400-600 degrees C and the mechanism there of is discussed.