Distribution of dislocations in GaSb and InSb epilayers grown on GaAs (001) vicinal substrates

GaSb and InSb epilayers grown on GaAs (001) vicinal substrates misoriented toward (111) plane were studied using high resolution x-ray diffraction. The results show that GaSb and InSb epilayers take on positive crystallographic tilt, and the asymmetric distribution of 60 degrees misfit dislocations in {111} glide planes have an effect on the tilt. In addition, the vicinal substrate influences the distribution of the threading dislocations in {111} glide planes, and the density of dislocation in the (111) plane is higher than in the ((1) over bar(1) over bar1) plane. A model was proposed to interpret the distribution of full width at half maximum, which can help us understand the formation and glide process of the dislocations. (C) 2009 American Institute of Physics. [DOI 10.1063/1.3115450]

Dyakonov-Perel spin relaxation in InSb/AlxIn(1-x)Sb quantum wells

We investigate theoretically the Dyakonov-Perel spin relaxation time by solving the eight-band Kane model and Poisson equation self-consistently. Our results show distinct behavior with the single-band model due to the anomalous spin-orbit interactions in narrow band-gap semiconductors, and agree well with the experiment values reported in recent experiment [K. L. Litvinenko et al., New J. Phys. 8, 49 (2006)]. We find a strong resonant enhancement of the spin relaxation time appears for spin align along [1 (1) over bar0] at a certain electron density at 4 K. This resonant peak is smeared out with increasing the temperature.

Semiconductor-metal transition in InSb nanowires and nanofilms under external electric field

The electronic structures, Rashba spin-orbit couplings, and transport properties of InSb nanowires and nanofilms are investigated theoretically. When both the radius of the wire (or the thickness of the film) and the electric field are large, the electron bands and hole bands overlap, and the Fermi level crosses with some bands, which means that the semiconductors transit into metals. Meanwhile, the Rashba coefficients behave in an abnormal way. The conductivities increase dramatically when the electric field is larger than a critical value. This semiconductor-metal transition is observable at the room temperature. (c) 2006 American Institute of Physics.

Electronic structure of InSb quantum ellipsoids in an external magnetic field

The shape dependence of electronic structure, electron g factors in the presence of the external magnetic field of InSb quantum ellipsoids are investigated in the framework of eight-band effective-mass approximation. It is found that as the increasing aspect ratio e, the electron states with P character split into three doublets for the different physical interaction and the light-hole states with S character come up to the top of valence bands at e = 2.6 in comparison with the heavy-hole states. In the presence of the external magnetic field, the energy splits of electron states are different for their wave function distribution direction, and the hole ground state remain optical active for a suitable aspect ratio. The electron g factors of InSb spheres decrease with increasing radius, and have the value of about two for the smallest radius, about -47.2 for sufficiently larger radius, similar to the bulk material case. Actually, the electron g factors decrease as any one of the three dimensions increase. The more dimensions increase, the more g factors decrease. The dimensions perpendicular to the direction of the magnetic field affect the g factors more than the other dimensions. (c) 2006 Elsevier B.V. All rights reserved.

Rashba spin-orbit coupling in InSb nanowires under transverse electric field

We investigate the Rashba spin-orbit coupling brought by transverse electric field in InSb nanowires. In small k(z) (k(z) is the wave vector along the wire direction) range, the Rashba spin-orbit splitting energy has a linear relationship with k(z), so we can define a Rashba coefficient similarly to the quantum well case. We deduce some empirical formulas of the spin-orbit splitting energy and Rashba coefficient, and compare them with the effective-mass calculating results. It is interesting to find that the Rashba spin-orbit splitting energy decreases as k(z) increases when k(z) is large due to the k(z)-quadratic term in the band energy. The Rashba coefficient increases with increasing electric field, and shows a saturating trend when the electric field is large. As the radius increases, the Rashba coefficient increases at first, then decreases. The effects of magnetic fields along different directions are discussed. The case where the magnetic field is along the wire direction or the electric field direction are similar. The spin state in an energy band changes smoothly as k(z) changes. The case where the magnetic field is perpendicular to the wire direction and the electric field direction is quite different from the above two cases, the k(z)-positive and negative parts of the energy bands are not symmetrical, and the energy bands with different spins cross at a k(z)-nonzero point, where the spin splitting energy and the effective g factor are zero.

Experimental and numerical investigations on dissolution and recrystallization processes of GaSb/InSb/GaSb under microgravity and terrestrial conditions

The effects of gravity and crystal orientation on the dissolution of GaSb into InSb melt and the recrystallization of InGaSb were investigated under microgravity condition using a Chinese recoverable satellite and under normal gravity condition on earth. To investigate the effect of gravity on the solid/liquid interface and compositional profiles. a numerical simulation was carried out. The InSb crystal melted at 525 degrees C and then a part of GaSb dissolved into the InSb melt during heating to 706 degrees C and this process led to the formation of InGaSb solution. InGaSb solidified during the cooling process. The experimental and calculation results clearly show that the shape of the solid/liquid interface and compositional profiles in the solution were significantly affected by gravity. Under microgravity, as the Ga compositional profiles were uniform in the radial direction. the interfaces were almost parallel. On the contrary, for normal gravity condition, as large amounts of Ga moved up in the upper region due to buoyancy, the dissolved zone broadened towards gravitational direction. Also. during the cooling process, needle crystals of InGaSb started appearing and the value of x of InxGa1-xSb crystals increased with the decrease of temperature. The GaSb with the (111)B plane dissolved into the InSb melt much more than that of the (111)A plane. (C) 2000 Elsevier Science B.V. All rights reserved.

离子径迹模板辅助法制备InSb纳米线

以厚度30μm的聚碳酸酯薄膜为母板,利用加速器提供的高能重离子对其进行辐照,辐照过的模板经紫外光敏化后置于蚀刻液中进行蚀刻以获得重离子径迹模板。采用电化学共沉积技术在重离子径迹模板中成功制备了InSb纳米线。通过扫描电子显微镜(SEM)对其形貌进行观察和分析,结合X射线衍射(XRD)研究沉积电位对InSb纳米成分的影响,最终获得了重离子径迹模板中制备InSb纳米线所需的最佳电化学沉积条件。

Investigation on Nonequlibrium Radiation and Relaxation Phenomena in Shock Tubes

The experimental results for the excited time of the nonequlibrium radiation and the ionization behind strong shock waves are presented. Using an optical multichannel analyzer, InSb infrared detectors and near-free-molecular Langmuir probes, the infrared radiation, the electron density of air and the nonequilibrium radiation spectra at different moments of the relaxation process in nitrogen test gas behind normal shock waves were obtained, respectively, in hydrogen oxygen combustion driven shock tubes.

InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy

The growth of InAsxSb1-x films on (100) GaSb substrates by liquid-phase epitaxy (LPE) has been investigated and epitaxial InAs0.3Sb0.7 films with InAs0.9Sb0.09 buffer layers have been successfully obtained. The low X-ray rocking curve FHWM values of InAs0.3Sb0.7 layer shows the high quality of crystal-orientation structure. Hall measurements show that the highest electron mobility in the samples obtained is 2.9 x 10(4) cm(2) V-1 s(-1) and the carrier density is 2.78 x 10(16)cm(-3) at room temperature (RT). The In As0.3Sb0.7 films grown on (10 0) GaSb substrates exhibit excellent optical performance with a cut-off wavelength of 12 mu m. (c) 2007 Elsevier B.V. All rights reserved.

弹道靶红外辐射测量

为深入认识再入物理现象，在弹道靶上做了模型头部和近尾流红外辐射测量。发射器为14.5mm口径的二级轻气炮，模型为φ10mm的球，材料为聚碳酸酯和铝，模型发射速度4～6km/s，使用红外InSb探测器测量波长3～5.4μm的红外辐射，靶室压力5.32kPa。实验中使用光电法测量模型速度，两站阴影照相进行模型姿态监测和速度核实。实验结果表明：球模型的红外辐射强度强烈依赖于模型材料和模型飞行速度。对不同材料模型头部和尾流部辐射强度的定性比较说明由于低温材料烧蚀产物的存在，极大地增强了头部和近尾流区的辐射强度，而且延长了尾流辐射长度。

Interfaces in InAs/GaSb Superlattices Grown by Molecular Beam Epitaxy

Short period InAs(4 ML)/GaSb(8 ML) superlattices (SLs) with InSb- and mixed-like (or Ga(1-x)In(x)As(1-)ySb(y)-like) interfaces (IFs) are grown by molecular-beam epitaxy (MBE) on (001) GaSb substrates at optimized growth temperature. Raman scattering reveals that two kinds of IFs can be formed by controlling shutter sequences. X-ray diffraction (XRD) and atomic force microscopy (AFM) demonstrate that SLs with mixed-like IFs are more sensitive to growth temperature than that with InSb-like IFs. The photoluminescence (PL) spectra of SLs with mixed-like IFs show a stronger intensity and narrower line width than with InSb-like IFs. It is concluded that InAs/GaSb SLs with mixed-like IFs have better crystalline and optical properties.

Molecular Beam Epitaxy of GaSb on GaAs Substrates with AlSb Buffer Layers

We investigate the molecular beam epitaxy growth of GaSb films on GaAs substrates using AlSb buffer layers. Optimization of AlSb growth parameter is aimed at obtaining high GaSb crystal quality and smooth GaSb surface. The optimized growth temperature and thickness of AlSb layers are found to be 450 degrees C and 2.1 nm, respectively. A rms surface roughness of 0.67 nm over 10 x 10 mu m(2) is achieved as a 0.5 mu m GaSb film is grown under optimized conditions.

MBE growth of very short period InAs/GaSb type-II superlattices on (001) GaAs substrates

First, GaSb epilayers were grown on (001) GaAs substrates by molecular beam epitaxy. We determined that the GaSb layers had very smooth surfaces using atomic force microscopy. Then, very short period InAs/ GaSb superlattices (SLs) were grown on the GaSb buffer layer. The optical and crystalline properties of the superlattices were studied by low-temperature photoluminescence spectra and high resolution transition electron microscopy. In order to determine the interface of SLs, the samples were tested by Raman-scattering spectra at room temperature. Results indicated that the peak wavelength of SLs with clear interfaces and integrated periods is between 2.0 and 2.6 mu m. The SL interface between InAs and GaSb is InSb-like.

Influence of N doping on the Rashba coefficient, semiconductor-metal transition, and electron effective mass in InSb1-xNx nanowires: Ten-band k center dot p model

The electronic structures of InSb1-xNx nanowires are investigated using the ten-band k center dot p method. It is found that nitrogen increases the Rashba coefficient of the nanowires dramatically. For thick nanowires, the Rashba coefficient may increase by more than 20 times. The semiconductor-metal transition occurs more easily in InSb1-xNx nanowires than in InSb nanowires. The electronic structure of InSb1-xNx nanowires is very different from that of the bulk material. For fixed x the bulk material is a semimetal, while the nanowires are metal-like. In InSb1-xNx bulk material and thick nanowires, an interesting decrease of electron effective mass is observed near k=0 which is induced by the nitrogen, but this phenomenon disappears in thin nanowires.