Efficient organic electroluminescent devices based on an organosamarium complex

Several organic electroluminescent devices with different device structures were fabricated based on an organosamarium complex Sm(HFNH)(3)phen[HFNH=4, 4, 5, 5, 6, 6, 6-heptafluoro-l-(2-naphthvl)hexane-1, 3-dione; phen=1, 10-phenanthroline] as emitter. Their electroluminescent properties were investigated in detail. Although the devices with the optimal structure ITO/TPD (50nm)/ Sm(HFNH)(3)phen (xwt%):CBP (50nm)/BCP (20nm)/AIQ (30nm)/LiF (1 nm),/Al (200nm) show high brightness (more than 400cd/m(2)) and high current efficiency (about 1 cd/A), there are emissions from CBP, BCP and even from AIQ existing in the electroluminescence (EL) spectra besides emission from Sm(HFNH)(3)Phen. The reason to this was discussed. The device with the structure ITO/TPD (50 nm)/ Sm(HFNH)(3)phen (50 nm)/AIQ (30 nm)/LiF (1 nm)/Al (200 nm) exhibits the maximum brightness of 118 cd/m(2) and current efficiency of 0.029 cd/A, and shows emissions from AIQ and Sm(HFNH)(3)phen at high voltages. However, with the BCP hole-block layer added, the device [ITO/TPD (50 nm)/Sm(HFNH)(3)phen (50 nm)/BCP (20 nm)/AIQ (30 nm)/LiF (1 nm)/Al (200 nm)] exhibits pure Sm3+ emission in 2 the EL spectra even at high voltages, with the maximum current efficiency of 0.29cd/A and brightness of 82cd/m(2)

Experimental study of the high-voltage breakdown and simulations for the RFQ cooler and buncher RFQ1L

The RFQ cooler and buncher RFQ1L is one of the key parts of the being-built super-heavy nuclide research spectrometer. In order to understand the high-voltage breakdown phenomenon, the voltages between electrodes have been measured. In addition, more extensive simulations have been performed for better understanding and optimizing the RFQ1L work points.

High gain in hybrid transistors with BAlq(3)/Alq(3) isotype heterostructure emitter

We report the fabrication of permeable metal-base transistors based on bis(2-methyl-8-quinolinolato-N1,O8)-(1,1'-biphenyl-4-olato) aluminum (BAlq(3))/tri(8-hydroxyquinoline) aluminum (Alq(3)) isotype heterostructure as emitter layer. In this transistor, n-Si was used as the collector, LiF/Al as the emitter electrode, and Au/Al bilayer metal as the base. We show that the leakage current is greatly reduced in Al/n-Si/Au/Al/BAlq(3)/Alq(3)/LiF/Al devices with respect to Al/n-Si/Au/Al/Alq(3)/LiF/Al devices due to the utilization of BAlq(3)/Alq(3) isotype heterostructure emitter, leading to high common-base and common-emitter current gains at low driving voltages.

High efficiency fluorescent white organic light-emitting diodes with red, green and blue separately monochromatic emission layers

Highly efficient fluorescent white organic light-emitting diodes (WOLEDs) have been fabricated by using three red, green and blue, separately monochromatic emission layers. The red and blue emissive layers are based on 4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidin-4-yl-vinyl)-4H-pyran (DCJTB) doped N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine (NPB) and p-bis(p-N,N-diphenyl-amino-styryl) benzene (DSA-ph) doped 2-methyl-9,10-di(2-naphthyl) anthracene (MADN), respectively; and the green emissive layer is based on tris(8-hydroxyquionline)aluminum(Alq(3)) doped with 10-(2-benzothiazolyl)-2,3,6,7-tetrahydro-1,1,7,7-tetramethyl- 1H,5H,1[H-(1)-benzopyropyrano(6,7-8-i,j)quinolizin-1]-one (C545T), which is sandwiched between the red and the blue emissive layers. It can be seen that the devices show stable white emission with Commission International de L'Eclairage coordinates of (0.41, 0.41) and color rendering index (CRI) of 84 in a wide range of bias voltages.

High gain in hybrid transistors with vanadium oxide/tris(8-hydroxyquinoline) aluminum emitter

We report the electrical characterization of hybrid permeable-base transistors with tris(8-hydroxyquinoline) aluminum as emitter layer. These transistors were constructed presenting an Al/n-Si/Au/Alq(3)/V2O5/Al structure. We investigate the influence of the V2O5 layer thickness and demonstrate that these devices present high common-base and common-emitter current gain, and can be operated at very low driving voltages, lower than 1 V, in both, common-base and common-emitter modes.

High current density tris(8-hydroxyquinoline) aluminum-based hybrid transistor in vertical architecture

We report the construction of hybrid permeable-base transistors, in vertical architecture, using tris(8-hydroxyquinoline) aluminum as emitter, a thin gold layer as base, and n-type silicon as collector. These transistors present high common-base current gain, can be operated at low driving voltages, and allow high current density.