Measurement of high-voltage pulses employing a quartz pockels cell

A high-voltage measuring system, employing a quartz Pockels cell, is described. The system is capable of a large voltage range, a fast response time (ns), a high SNR, an excellent accuracy, a good linearity, and high reliability. Furthermore, the Pockels cell can be isolated from ground potential. Equally important, the detection system can be isolated from sources of electrical noise present in, for example, fast discharges.

Experimental study of the high-voltage breakdown and simulations for the RFQ cooler and buncher RFQ1L

The RFQ cooler and buncher RFQ1L is one of the key parts of the being-built super-heavy nuclide research spectrometer. In order to understand the high-voltage breakdown phenomenon, the voltages between electrodes have been measured. In addition, more extensive simulations have been performed for better understanding and optimizing the RFQ1L work points.

高电压锯齿波聚束器的设计研制；Theoretical Calculation of Sawtooth Wave Buncher with High Voltage

近些年来,使用锯齿波直接形成的方法建造非谐振型聚束器在国内及国际均得到了广泛的应用。由于电子技术及机械加工工艺的飞速发展和更高功率电子管的出现,可以设计出更高指标的聚束器,进而可以有效提高束线的匹配效率及运行稳定度。对兰州重离子加速器源束线新的高电压锯齿波聚束器的研制进行了详细阐述,由于该聚束器具有目前国际同类型设备中最高的电压、频率以及相对苛刻的现场条件限制,故还对设计中所涉及的工程实施方案进行了有效补充和完善。

高压强脉冲电流对金属裂纹的止裂效果

如何产生高强度脉冲电流是应用电磁热效应遏制金属裂纹扩展的一个关键问题。介绍了高压脉冲放电装置的工作原理，从理论、数值模拟、实验三个方面，通过对不同尺寸的裂纹试件导入强脉冲电流而产生的电磁热效应的止裂效果进行了分析和研究，研究结果表明：强脉冲电流产生的电磁热效应，能够使裂纹尖端处熔化形成微小的焊口，遏制了裂纹的扩展。试件的通流尺寸、电阻率、导入电流密度是影响裂纹尖端温度场和温度梯度场的主要因素。

高压脉冲放电技术在金属裂纹止裂中的应用

如何产生高强度脉冲电流是应用电磁热效应遏制金属裂纹研究的一个关键问题.本文介绍了高压脉冲放电装置的工作原理;从理论上分析了充电电压、回路参数与放电电流幅值、放电周期之间的关系.在此基础上,自主设计、开发了一套高压脉冲放电装置.采用它对金属模具钢中裂纹进行了脉冲放电止裂实验.放电时裂纹尖端熔化形成堆焊和高压应力区,使裂纹尖端钝化,达到了止裂的目的.由于脉冲放电快速加热和冷却,在裂纹尖端处实现了冲击淬火,得到了超细化的隐晶马氏体和细粒碳化物等微观组织,提高了裂纹尖端处的硬度、强韧性和耐磨性,试验结果验证了该装置的有效性,本文的成果为采用电磁热效应对金属模具裂纹止裂提供了实验技术基础.

Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors

Current-based microscopic defect analysis method such as current deep level transient spectroscopy (I-DLTS) and thermally stimulated current have been developed over the years at Brookhaven National Laboratory (BNL) for the defect characterizations on heavily irradiated (Phi(n) >= 10(13) n/cm(2)) high-resistivity (>= 2 k Omega cm) Si sensors/detectors. The conventional DLTS method using a capacitance transient is not valid on heavily irradiated high-resistivity Si sensors/detectors. A new optical filling method, using lasers with various wavelengths, has been applied, which is more efficient and suitable than the traditional voltage-pulse filling. Optimum defect-filling schemes and conditions have been suggested for heavily irradiated high-resistivity Si sensors/detectors. (c) 2006 Published by Elsevier Ltd.

Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors

Current-based microscopic defect analysis method such as current deep level transient spectroscopy (I-DLTS) and thermally stimulated current have been developed over the years at Brookhaven National Laboratory (BNL) for the defect characterizations on heavily irradiated (Phi(n) >= 10(13) n/cm(2)) high-resistivity (>= 2 k Omega cm) Si sensors/detectors. The conventional DLTS method using a capacitance transient is not valid on heavily irradiated high-resistivity Si sensors/detectors. A new optical filling method, using lasers with various wavelengths, has been applied, which is more efficient and suitable than the traditional voltage-pulse filling. Optimum defect-filling schemes and conditions have been suggested for heavily irradiated high-resistivity Si sensors/detectors. (c) 2006 Published by Elsevier Ltd.

DEVELOPMENT OF CURRENT-BASED MICROSCOPIC DEFECT ANALYSIS-METHODS AND ASSOCIATED OPTICAL FILLING TECHNIQUES FOR THE INVESTIGATION ON HIGHLY IRRADIATED HIGH-RESISTIVITY SILICON DETECTORS

Current based microscopic defect analysis methods such as current deep level transient spectroscopy (I-DLTS) and thermally stimulated current (TSC) have been further developed in accordance with the need for the defect analysis of highly irradiated (Phi(n) > 10(13) n/cm(2)) high resistivity silicon detectors. The new I-DLTS/TSC system has a temperature range of 8 K less than or equal to T less than or equal to 450 K and a high sensitivity that can detect a defect concentration of less than 10(10)/cm(3) (background noise as low as 10 fA). A new filling method using different wavelength laser illumination has been applied, which is more efficient and suitable than the traditional voltage pulse filling. It has been found that the filling of a defect level depends on such factors as the total concentration of free carriers generated or injected, the penetration length of the laser (laser wavelength), the temperature at which the filling is taking place, as well as the decay time after the filling (but before the measurement). The mechanism of the defect filling can be explained by the competition between trapping and detrapping of defect levels, possible capture cross section temperature dependence, and interaction among various defect levels in terms of charge transferring. Optimum defect filling conditions have been suggested for highly irradiated high resistivity silicon detectors.

适合于小飞机防撞系统的机载小型激光测距仪

报道了一种重量轻、功耗低、适合于小飞机防撞系统应用的小型激光测距仪。系统基于脉冲激光测距原理，采用905nm半导体脉冲激光器、电感升压式偏置高压电源和可编程逻辑器件（PLD），研制出重量不大于100g，功耗不大于625mW，测量范围100m，盲区3．0m，分辨率±1m的机载小型激光测距仪。实验测试结果表明，其各项技术性能指标符合无人驾驶小飞机防撞系统的应用要求。

Laser ranging based on electro-optic switch

Based on electro-optic switch effect in crystal, a novel laser ranging method is proposed. CW-laser emitted by laser transmitter propagates forward to the measured target, after being reflected by the target, and then goes back to the transmitter. Close to the transmitter, a special mono-block LiNbO3 crystal is added into the round-trip light beams. High-voltage pulses with the sharp enough changes in rising edges are loaded on the crystal. Based on electro-optic effect, double refraction and internal double reflection effect in crystal, the crystal cuts off the round-trip light beams, and reflects a light pulse cut out by the crystal to a detector aside from the original beam path. The pulse width T is the period that laser propagates forward and back between the crystal and the target. The feasibility of the new idea is proved by our experiments and a brand-new way for the laser ranging is provided. (c) 2005 Elsevier GmbH. All rights reserved.

A Prototype X-ray Framing Camera With Variable Exposure Time Based on Double-Gated Micro-Channel Plates

We present a novel X-ray frame camera with variable exposure time that is based on double-gated micro-channel plates (MCP). Two MCPs are connected so that their channels form a Chevron-MCP structure, and four parallel micro-strip lines (MSLs) are deposited on each surface of the Chevron-MCP. The MSLs on opposing surfaces of the Chevron-MCP are oriented normal to each other and subjected to high voltage. The MSLs on the input and output surfaces are fed high voltage pulses to form a gating action. In forming two-dimensional images, modifying the width of the gating pulse serves to set exposure times (ranging from ps to ms) and modifying the delay between each gating pulse serves to set capture times. This prototype provides a new tool for high-speed X-ray imaging, and this paper presents both simulations and experimental results obtained with the camera.

A high charge state all-permanent magnet ECR ion source for the IMP 320 kV HV platform

A 320 kV high voltage (HV) platform has been constructed at Institute of Modern Physics (IMP) to satisfy the increasing requirements of experimental studies in some heavy ion associated directions. A high charge state all-permanent magnet ECRIS-LAPECR2 has been designed and fabricated to provide intense multiple charge state ion beams (such as 1000 e mu A O6+, 16.7 e mu A Ar14+, 24 e mu A Xe27+, etc.) for the HV platform. LAPECR2 has a dimension of 0 650 mm x 560 mm. The powerful 3D magnetic confinement to the ECR plasma and the optimum designed magnetic field for the operation at 14.5 GHz makes it possible to obtain very good performances from this source. After a brief introduction of the ECRIS and accelerator development at IMP, the conceptual design of LAPECR2 source is presented. The first test results of this all-permanent magnet ECRIS are given in this paper.

Long lifetime plasma channel in air generated by multiple femtosecond laser pulses and an external electrical field

The lifetime of a plasma channel produced by self-guiding intense femtosecond laser pulses in air is largely prolonged by adding a high voltage electrical field in the plasma and by introducing a series of femtosecond laser pulses. An optimal lifetime value is realized through adjusting the delay among these laser pulses. The lifetime of a plasma channel is greatly enhanced to 350 ns by using four sequential intense 100fs( FWHM) laser pulses with an external electrical field of about 350kV/m, which proves the feasibility of prolonging the lifetime of plasma by adding an external electrical field and employing multiple laser pulses. (c) 2006 Optical Society of America.

外加高压电场下空气中激光等离子体通道寿命研究

通过对飞秒激光在空气中产生的等离子体通道两端外加高压,来研究通道的寿命变化情况。实验得到,当在等离子体通道两端外加高压时(350 kV/m),等离子体通道寿命延长了近3倍。理论模拟和分析结果表明在外加电场条件下,碰撞电离得到增强,吸附作用相对减弱,解离复合系数随着电子平均能量的增加而下降的趋势更为剧烈,这进一步引起了等离子体通道寿命的延长。实验结果与理论分析共同表明了利用外加电场对空气中激光等离子体通道寿命进行延长的可行性。