Studies of instrumental spreading in gel permeation chromatography by coupling with a two-angle laser light scattering detector

The instrumental spreading of a high temperature gel permeation chromatograph (GPC) was evaluated by coupling with a two-angle laser light scattering (TALLS) detector, using narrow polystyrene, polyethylene, and syndiotactic polypropylene samples. The determined spreading factor increased with increasing molecular weight of polymers, and no maximum for spreading 174 tor was observed in the studied retention volume, while the spreading factors for single low molecular weight alkanes are independent of their molecular weight. Neglecting of the spreading effect for GPC would not introduce much error in molecular weight calculation when high quality high performance columns were used, especially when equipped with a laser light scattering detector. The scaling relationship between radius of gyration and molecular weight of polymer, determined by GPC with a TALLS detector, was independent of the instrumental spreading.

A general theory on media with randomly distributed inclusions .1. The average field behaviors

In this paper, a theory is developed to calculate the average strain field in the materials with randomly distributed inclusions. Many previous researches investigating the average field behaviors were based upon Mori and Tanaka's idea. Since they were restricted to studying those materials with uniform distributions of inclusions they did not need detailed statistical information of random microstructures, and could use the volume average to replace the ensemble average. To study more general materials with randomly distributed inclusions, the number density function is introduced in formulating the average field equation in this research. Both uniform and nonuniform distributions of inclusions are taken into account in detail.

Dynamics of quantum dissipation systems interacting with fermion and boson grand canonical bath ensembles: Hierarchical equations of motion approach

A hierarchical equations of motion formalism for a quantum dissipation system in a grand canonical bath ensemble surrounding is constructed on the basis of the calculus-on-path-integral algorithm, together with the parametrization of arbitrary non-Markovian bath that satisfies fluctuation-dissipation theorem. The influence functionals for both the fermion or boson bath interaction are found to be of the same path integral expression as the canonical bath, assuming they all satisfy the Gaussian statistics. However, the equation of motion formalism is different due to the fluctuation-dissipation theories that are distinct and used explicitly. The implications of the present work to quantum transport through molecular wires and electron transfer in complex molecular systems are discussed. (c) 2007 American Institute of Physics.

Photoluminescence study of InAs/GaAs self-organized quantum dots with bimodal size distribution

We have investigated the temperature dependence of the photoluminescence (PL) spectrum of self-organized InAs/GaAs quantum dots. A distinctive double-peak feature of the PL spectra from quantum dots has been observed, and a bimodal distribution of dot sizes has also been confirmed by scanning tunneling microscopy image for uncapped sample. The power-dependent PL study demonstrates that the distinctive PL emission peaks are associated with the ground-state emission of islands in different size branches. The temperature-dependent PL study shows that the PL quenching temperature for different dot families is different. Due to lacking of the couple between quantum dots, an unusual temperature dependence of the linewidth and peak energy of the dot ensemble photoluminescence has not been observed. In addition, we have tuned the emission wavelength of InAs QDs to 1.3 mu m at room temperature.

Material transport in self-assembled InAs/GaAs quantum dot ensemble

Introducing the growth interruption between the InAs deposition and subsequent GaAs growth in self-assembled quantum dot (QD) structures, the material transport process in the InAs layers has been investigated by photoluminescence and transmission electron microscopy measurement. InAs material in structures without misfit dislocations transfers from the wetting layer to QDs corresponding to the red-shift of PL peak energy due to interruption. On the other hand, the PL peak shifts to higher energy in the structures with dislocations. In this case, the misfit dislocations would capture the InAs material from the surrounding wetting layer and coherent islands leading to the reduction of the size of these QDs. The variations in the PL intensity and Linewidth are also discussed.

Material transport in self-assembled InAs/GaAs quantum dot ensemble

Introducing the growth interruption between the InAs deposition and subsequent GaAs growth in self-assembled quantum dot (QD) structures, the material transport process in the InAs layers has been investigated by photoluminescence and transmission electron microscopy measurement. InAs material in structures without misfit dislocations transfers from the wetting layer to QDs corresponding to the red-shift of PL peak energy due to interruption. On the other hand, the PL peak shifts to higher energy in the structures with dislocations. In this case, the misfit dislocations would capture the InAs material from the surrounding wetting layer and coherent islands leading to the reduction of the size of these QDs. The variations in the PL intensity and Linewidth are also discussed.