High-energy ion emission from cooled deuterium clusters in 20 TW laser fields

High-energy ion emission from intense-ultrashort (30fs) laser-pulse- cooled deuterium-cluster (80K) interaction is measured. The deuterium ions have an average energy 20keV, which greatly exceeds Zweiback's expectation [Phys. Rev. Lett. 84 (2000) 2634]. These fast deuterium ions can be used to drive fusion and have a broad prospect.

Investigation of PL properties of C-doped SiO2/Si samples after high energy Pb ion irradiation

Amorphous SiO2 thin films with about 400-500 nm in thickness were thermally grown on single crystalline silicon. These SiO2/Si samples were firstly implanted at room temperature (RT) with 100 keV carbon ions to 2.0 x 10(17),5.0 X 10(17) or 1.2 x 10(18) ions/cm(2), then irradiated at RT by 853 MeV Pb ions to 5.0 x 10(11), 1.0 X.10(12) 2.0 x 10(12) or 5.0 x 10(12) ions/cm(2), respectively. The variation of photoluminescence (PL) properties of these samples was analyzed at RT using a fluorescent spectroscopy. The obtained results showed that Pb-ion irradiations led to significant changes of the PL properties of the carbon ion implanted SiO2 films. For examples, 5.0 x 10(12) Pb-ions/cm(2) irradiation produced huge blue and green light-emitters in 2.0 x 10(17) C-ions/cm(2) implanted samples, which resulted in the appearance of two intense PL peaks at about 2.64 and 2.19 eV. For 5.0 x 10(17) carbon-ions/cm(2) implanted samples, 2.0 x 10(12) Pb-ions/cm(2) irradiation could induce the formation of a strong and wide violet band at about 2.90 eV, whereas 5.0 x 10(12) Pb-ionS/cm(2) irradiation could,create double peaks of light emissions at about 2.23 and 2.83 eV. There is no observable PL peak in the 1.2 x 10(18) carbon-ions/cm(2) implanted samples whether it was irradiated with Pb ions or not. All these results implied that special light emitters could be achieved by using proper ion implantation and irradiation conditions, and it will be very useful for the synthesis of new type Of SiO2-based light-emission materials.

Damage of a High-Energy Solid Propellant and Its Deflagration-to-Detonation Transition

In order to assess the safety of high-energy solid propellants, the effects of damage on deflagration-to-detonation transition (DDT) in a nitrate ester plasticized polyether (NEPE) propellant, is investigated. A comparison of DDT in the original and impacted propellants was studied in steel tubes with synchronous optoelectronic triodes and strain gauges. The experimental results indicate that the microstructural damage in the propellant enhances its transition rate from deflagration to detonation and causes its danger increase. It is suggested that the mechanical properties of the propellant should be improved to restrain its damage so that the likelihood of DDT might be reduced.

Damage of a high-energy solid propellant and its effects on combustion

In order to improve the safety of high-energy solid propellants, a study is carried out for the effects of damage on the combustion of the NEPE (Nitrate Ester Plasticized Polyether) propellant. The study includes: (1) to introduce damage into the propellants by means of a large-scale drop-weight apparatus; (2) to observe microstructural variations of the propellant with a scanning electron microscope (SEM) and then to characterize the damage with density measurements; (3) to investigate thermal decomposition; (4) to carry out closed-bomb tests. The NEPE propellant can be considered as a viscoelastic material. The matrices of damaged samples axe severely degraded, but the particles are not. The results of the thermal decomposition and closed-bomb tests show that the microstructural damage in the propellant affects its decomposition and burn rate.

(Ti,Al)N Film On Normalized T8 Carbon Tool Steel Prepared By Pulsed High Energy Density Plasma Technique

Under optimized operating parameters, a hard and wear resistant ( Ti,Al)N film is prepared on a normalized T8 carbon tool steel substrate by using pulsed high energy density plasma technique. Microstructure and composition of the film are analysed by x-ray diffraction, x-ray photoelectron spectroscopy, Auger electron spectroscopy and scanning electron microscopy. Hardness profile and tribological properties of the film are tested with nano-indenter and ring-on-ring wear tester, respectively. The tested results show that the microstructure of the film is dense and uniform and is mainly composed of ( Ti,Al)N and AlN hard phases. A wide transition interface exists between the film and the normalized T8 carbon tool steel substrate. Thickness of the film is about 1000 nm and mean hardness value of the film is about 26GPa. Under dry sliding wear test conditions, relative wear resistance of the ( Ti,Al)N film is approximately 9 times higher than that of the hardened T8 carbon tool steel reference sample. Meanwhile, the ( Ti,Al)N film has low and stable friction coefficient compared with the hardened T8 carbon tool steel reference sample.

Enhanced cycling performance and high energy density of LiFePO4 based lithium ion batteries

LiFePO4 attracts a lot of attention as cathode materials for the next generation of lithium ion batteries. However, LiFePO4 has a poor rate capability attributed to low electronic conductivity and low density. There is seldom data reported on lithium ion batteries with LiFePO4 as cathode and graphite as anode. According to our experimental results, the capacity fading on cycling is surprisingly negligible at 1664 cycles for the cell type 042040. It delivers a capacity of 1170 mAh for 18650 cell type at 4.5C discharge rate. It is confirmed that lithium ion batteries with LiFePO4 as cathode are suitable for electric vehicle application. (c) 2007 Elsevier B.V. All rights reserved.

Temporal-space-transforming pulse-shaping system with a knife-edge apparatus for a high-energy laser facility

For the first time to our knowledge, in a high-energy laser facility with an output energy of 454.37 J, by using a temporal-space-transforming pulse-shaping system with our own design of a knife-edge apparatus, we obtained a quasi-square laser pulse. (c) 2005 Optical Society of America.

High-energy LDA switched side-pumped electro-optical Q-switched Nd : YAG ceramic laser

By employing a uniformly compact side-pumping system, a high-energy electro-optical Q-switched Nd:YAG ceramic laser has been demonstrated. With 420 W quasi-cw laser-diode-array pumping at 808 ran and a 100 Hz modulating repetition rate, 50 mJ output energy at 1064 nm was obtained with 10 ns pulse width, 5 W average output power, and 5 MW peak power. Its corresponding slope efficiency was 29.8%. The laser system operated quite stably and no saturation phenomena have been observed, which means higher output energy could be expected. Laser parameters between ceramic and single-crystal Nd:YAG lasers have been compared, and pulse characteristics of Nd:YAG ceramic with different repetition rate have been investigated in detail. The still-evolving Nd:YAG ceramics are potential super excellent media for high-energy laser applications. (C) 2007 Optical Society of America.

Electrical and optical properties of InAs/GaAs quantum dots doped by high energy Mn implantation

Mn ions were doped into InAs/GaAs quantum dots samples by high energy. implantation and subsequent annealing. The optical and electric properties of the samples have been studied. The photoluminescence intensity of the samples annealed rapidly is stronger than that of the samples annealed for long time. By studying the relationship between the photoluminescence peaks and the implantation dose, it can be found that the photoluminescence peaks of the quantum dots show a blueshift firstly and then move to low energy with the implantation. dose increasing. The latter change in the photoluminescence peaks is probably attributed to that Mn ions entering the InAs quantum dots, which release the strain of the quantum dots. For the samples implanted by heavy dose (annealed rapidly) and the samples annealed for long time, the resistances versus temperature curves reveal anomalous peaks around 40 K.

High energy ion implantation enhanced intermixed quantum well structures and their absorption characteristics in passive optical waveguides

We have shown that high energy ion implantation enhanced intermixing (HE-IIEI) technology for quantum well (QW) structures is a powerful technique which can be used to blue shift the band gap energy of a QW structure and therefore decrease its band gap absorption. Room temperature (RT) photoluminescence (PL) and guided-wave transmission measurements have been employed to investigate the amount of blue shift of the band gap energy of an intermixed QW structure and the reduction of band gap absorption, Record large blue shifts in PL peaks of 132 nm for a 4-QW InGaAs/InGaAsP/InP structure have been demonstrated in the intermixed regions of the QW wafers, on whose non-intermixed regions, a shift as small as 5 nm is observed. This feature makes this technology very attractive for selective intermixing in selected areas of an MQW structure. The dramatical reduction in band gap absorption for the InP based MQW structure has been investigated experimentally. It is found that the intensity attenuation for the blue shifted structure is decreased by 242.8 dB/cm for the TE mode and 119 dB/cm for the TM mode with respect to the control samples. Electro-absorption characteristics have also been clearly observed in the intermixed structure. Current-Voltage characteristics were employed to investigate the degradation of the p-n junction in the intermixed region. We have achieved a successful fabrication and operation of Y-junction optical switches (JOS) based on MQW semiconductor optical amplifiers using HE-IIEI technology to fabricate the low loss passive waveguide. (C) 1997 Published by Elsevier Science B.V.