Microelements in Potato and Lily Samples Studied by Laser-Induced Breakdown spectroscopy Technology

A LIBS setup was built in the Institute of Modern Physics. In our experiments, LIBS spectra produced by infrared radiation of Nd : YAG nanosecond laser with 100 and 150 mJ pulse energy, respectively, were measured by fiber optic spectrometer in the ranges of 230-430 run and 430-1080 nm with a delay time of 1.7 and gate width of 2 ms for potato and lily samples prepared by vacuum freeze-dried technique. The lines from different metal elements such as K, Ca, Na, Mg, Fe, Al, Mn and Ti, and nonmetal elements such as C, N, O and H, and some molecular spectra from C-2, CaO, and CN were identified according to their wavelengths. The relative content of the six microelements, Ca, Na, K, Fe, Al, and Mg in the samples were analyzed according to their representative line intensities. By comparison we found that there are higher relative content of Ca and Na in lily samples and higher relative content of Mg in potato samples. The experimental results showed that LIBS technique is a fast and effective means for measuring and comparing the contents of microelements in plant samples.

百合鳞茎低温贮藏及热胁迫下新铁炮百合的光合特性

百合是重要的球根花卉，是世界五大切花之一。我国的百合野生资源丰富，但百合鲜切花生产与世界花卉大国相比仍然存在差距，优质的商品种球大量依靠进口，实现商品种球国产化能够促进百合鲜切花生产和农业经济发展。温度是影响百合生长发育最重要的因子之一，影响百合鳞茎发育，限制百合的分布区域。 百合鳞茎具有自然休眠的特性，低温处理是目前打破百合鳞茎休眠的最常用的方法。低温处理期间，鳞茎内发生复杂的反应，淀粉水解，鳞茎内的淀粉酶（α-淀粉酶和β-淀粉酶）活性增加，可溶性糖主要是蔗糖积累;可溶性蛋白质含量增加，游离氨基酸在鳞茎相对幼嫩的器官中集中;休眠解除期间脱落酸和玉米素核苷含量呈下降趋势，赤霉素含量呈上升趋势且活性增高，鳞茎各部位生长素都有上升，一些其他生长调节剂如Me-JA和多胺对解除百合鳞茎也有作用。低温处理期间，鳞茎内各种激素相互作用，共同调控鳞茎的休眠状态。利用低温处理打破百合鳞茎休眠的过程中，温度要求控制在稳定的范围内。利用冰箱低温处理打破百合鳞茎休眠的实验中，放入样品前冰箱内的温度在所设定温度±1℃范围内波动，且不同部位温度均匀;但冰箱内放入样品后，其内部不同部位的温度相差较大，表现为上部温度高，下部温度低，冰箱内部不同部位温度差异很大。 从百合资源在中国的分布看，华北地区的百合资源相对稀缺，温度是限制其生长的重要环境因子。新铁炮百合能够在炎热的华南地区露地栽培，将其在华北地区进行区域化露地栽培实验，对百合栽培应用推广，扩大栽培面积，降低运输成本，以及保证鲜切花质量有重要意义。通过气体交换测定的光合作用是对高温最敏感和综合的生理指标，可以在植物生长和生物量积累未发生明显变化之前揭示高温的影响。本研究通过人工气候箱，设定四个温度梯度：25℃，32℃，38℃，44℃，处理2h，通过测定新铁炮百合幼苗的光合特性研究其耐热程度、探讨可能的耐热机制。结果表明：净光合作用速率（Pn）在小于38℃时下降幅度不大，大于38℃后显著下降，随着处理温度的提高，气孔导度（Gs）呈下降的趋势，胞间二氧化碳浓度（Ci）则上升，而气孔限制值（Ls）下降。高温下，两品种叶片最小荧光（Fo）无明显变化，最大荧光（Fm）和光系统II（PSⅡ）最大光化学效率（Fv/Fm）下降程度较小;光下，PSⅡ实际光化学效率（ΦPSⅡ）呈下降趋势，44℃处理后显著下降;NPQ随处理温度的提高而上升;处理温度升高，SOD、APX、CAT、POD活力增强。研究表明新铁炮百合能够耐受32-38℃的高温;热胁迫下，叶片通过提高非光化猝灭和抗氧化酶活性两种机制来抵御高温胁迫。

GROWTH OF HIGH-QUALITY GALLIUM-ARSENIDE ON HF-ETCHED SILICON (001) BY CHEMICAL BEAM EPITAXY

HF etching followed by relatively low temperature (almost-equal-to 600-degrees-C) pretreatment is shown to provide a suitable substrate for the heteroepitaxial growth of GaAs on Si(100) by CBE using TEGa and AsH3 as sources. Rutherford backscattering (RBS), photoluminescence (PL), transmission electron microscopy (TEM), and Raman measurements show the low-defect nature of the GaAs epilayer.

CBE GROWTH OF GAAS/GAAS, GAAS/SI AND ALGAAS/GAAS USING TEG, ASH3 AND AMINE-ALANE PRECURSORS

The growth of high quality AlGaAs by CBE bas been limited by the high levels of carbon and oxygen contamination. The use of alane based precursors offers a significant reduction in such contamination. We report for the first time the CBE growth of AlxGa1-xAs from triethylgallium, dimethylethylamine-alane and arsine, and compare with. growth from triethylgallium, trimethylamine-alane and arsine. Some preliminary results of work on the CBE growth of GaAs on silicon will also be reported.

利用CBE���术在Si衬底上生长GaAs薄膜

于2010-11-23批量导入