Mitochondrial DNA Haplogroups M7b1 ' 2 and M8a Affect Clinical Expression of Leber Hereditary Optic Neuropathy in Chinese Families with the m.11778G -> A Mutation

Leber hereditary optic neuropathy (LHON) is the most extensively studied mitochondrial disease, with the majority of the cases being caused by one of three primary mitochondrial DNA (mtDNA) mutations. Incomplete disease penetrance and gender bias are two

Molecular characterization of six Chinese families with m.3460G > A and Leber hereditary optic neuropathy

The primary mutation m.3460G > A occurs with a very low frequency (similar to 1%) in Chinese patients with Leber hereditary optic neuropathy (LHON). Up to now, there is no comprehensive study of Chinese patients harboring this mutation. We characterized six unrelated probands with m.3460G > A in this study, which were identified from 1,626 patients with LHON or suspected with LHON. The overall penetrance of LHON (25.6% [10/39]) in four pedigrees with m.3460G > A was substantially lower than those families with m.11778G > A (33.3% [619/1859]) as reported in our previous study. Intriguingly, family Le688 with a heteroplasmic m.3460G > A presented a lower penetrance (12.5%) than the other three families with a homoplasmic mutation. There is an elevated gender bias (affected male to affected female = 4:1) in the four families with m.3460G > A compared to those LHON families with m.11778G > A (2.4:1). Complete mtDNA sequencing indicated that the six matrilines belonged to haplogroups B4d1, F2, A5b, M12a, D4b2b, and D4b2, respectively. We did not identify any potential secondary mutation(s) that will affect or be associated with the penetrance of LHON in the six probands by using an evolutionary analysis and protein secondary-structure prediction. Taken together, our results suggested that the m.3460G > A mutation occurred multiple times in Chinese LHON patients. The heteroplasmic status of mutation m.3460G > A might influence the penetrance of LHON in family Le688.

Effects of superimposed pulse bias on TiN coating in cathodic arc deposition

Orthogonal designs are used to investigate the main factors when doing experiments in which pulse bias is superimposed on d.c. bias during cathodic are deposition of TiN. Pulse peak, duty cycle, frequency, direct voltage, are current and pressure all are investigated when coating TiN on HSS substrates. Roughness, surface micrograph, microhardness and thickness are tested. By analysis of variance, it is shown that pressure and frequency are the main factors. R-a and droplet density of the film with (d.c. + pulse) bias decrease. A simple explanation for the result is suggested.

Guiding neutral atoms with two current-carrying wires and a vertical bias field on the atom chip

We demonstrate the guiding of neutral atoms with two parallel microfabricated current-carrying wires on the atom chip and a vertical magnetic bias field. The atoms are guided along a magnetic field minimum parallel to the current-carrying wires and confined in the other two directions. We describe in detail how the precooled atoms are efficiently loaded into the two-wire guide. We present a detailed experimental study of the motional properties of the atoms in the guide and the relationship between the location of the guide and the vertical bias field. This two-wire guide with vertical bias field can be used to realize large area atom interferometer.

Is there a close relationship between synonymous codon bias and codon-anticodon binding strength in human genes?

Synonymous codon bias has been examined in 78 human genes (19967 codons) and measured by relative synonymous codon usage (RSCU). Relative frequencies of all kinds of dinucleotides in 2,3 or 3,4 codon positions have been calculated, and codon-anticodon bin

The features of synonymous codon bias and GC-content relationship in human genes

728 human genes were divided to four groups according to the GC contents of their coding sequences (from GC<0.43 to GC>0.58). Examination of synonymous-codon bias in the 4 groups show that NTG (N represents any base of T, A, C, G) is most favored and NCG

Gender effect on the right-left discrimination task in a sample of heroin-dependent patients

Rationale: Discriminating right from left is an everyday cognitive ability. Repeated exposure to certain drugs, such as heroin, can produce poor performance on many cognitive tasks. However, it is yet unclear whether drug abuse impairs the ability of right-left discrimination. Objectives: The aim of the present study is to examine whether the spatial ability measured by the right-left discrimination task can be affected by heroin abuse and whether such drug effect, if it exists, is gender related. Methods: A paper-and-pen test was used. The test consists of line drawings of a person with no arm, one arm, or both arms crossing the vertical body axis of the figure. The line drawings are viewed from the back, from the front, or randomly alternating between the back and front drawings. The subjects task is to mark which is the right or left hand in the figure as fast as possible. Results: A main finding in this study was that the ability to discriminate between left and right in visual space was impaired in heroin-dependent patients. Especially, heroin-dependent females performed poorer than control females in all conditions but heroin-dependent males only performed poorly in part of conditions. Conclusions: Recent heroin abuse impairs the ability of right-left discrimination and such impairment is gender related: heroin-dependent females demonstrated greater performance deficits than males.

Heroin impairs map-picture-following and memory tasks dependent on gender and orientation of the tasks

Male and female heroin-dependent patients (HDPs) matched with "normal" people were tested on 4 topographical orientation tasks: schematic map-following, map-memory, schematic picture-following, and picture-memory tasks. The results showed that, in general

Investigation of responsivity decreasing with rising bias voltage in a GaN Schottky barrier photodetector

The unexpected decrease in measured responsivity observed in a specific GaN Schottky barrier photodetector (PD) at high reverse bias voltage was investigated and explained. Device equivalent transforms and small signal analysis were performed to analyse the test circuit. On this basis, a model was built which explained the responsivity decrease quantitatively. After being revised by this model, responsivity curves varying with bias voltage turned out to be reasonable. It is proved that the decrease is related to the dynamic parallel resistance of the photodiode. The results indicate that with a GaN Schottky PD, the choice of load resistance is restricted according to the dynamic parallel resistance of the device to avoid responsivity decay at high bias voltage.

Dielectric relaxation and giant dielectric constant of Nb-doped CaCu3Ti4O12 ceramics under dc bias voltage

CaCu3Ti(4-x)Nb(x)O(12) (x = 0, 0.01, 0.08, 0.2) ceramics were fabricated by a conventional solid-state reaction method. The ceramics showed the body-centered cubic structure without any foreign phases and the grain size decreases with Nb doping. Two Debye-type relaxations were observed for the Nb-doped samples at low frequency and high frequency, respectively. The complex electric modulus analysis revealed that the surface layer, grains and grain boundaries contributed to the dielectric constant. The low-frequency dielectric constant relative to the surface layer decreased to a minimum and then increased with the dc bias voltage at 100 Hz, which were well explained in terms of a model containing two metal oxide semiconductors in series, confirming the surface layer in the ceramics. The shift voltage V-B corresponding to the minimal capacitance increased with increase of the composition x. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Interdot interaction induced zero-bias maximum of the differential conductance in parallel double quantum dots

We have studied the equilibrium and nonequilibrium electronic transports through a double quantum dot coupled to leads in a symmetrical parallel configuration in the presence of both the inter- and the intradot Coulomb interactions. The influences of the interdot interaction and the difference between dot levels on the local density of states (LDOS) and the differential conductance are paid special attention. We find an interesting zero-bias maximum of the differential conductance induced by the interdot interaction, which can be interpreted in terms of the LDOS of the two dots. Due to the presence of the interdot interaction, the LDOS peaks around the dot levels epsilon(i) are split, and as a result, the most active energy level which supports the transport is shifted near to the Fermi level of the leads in the equilibrium situation. (c) 2006 American Institute of Physics.

HYDROGEN DIFFUSION IN A-SI-H/A-SI STRUCTURE UNDER ELECTRICAL BIAS

By using the technique of elastic recoil detection (ERD), we have measured the hydrogen profiles in a-Si:H/a-Si structure samples annealed at various temperatures with and without electrical bias, and investigated the influence of electrical bias on hydrogen diffusion. The results show that hydrogen diffusion in a-Si is significantly enhanced by the action of electrical bias. The existence of the excess carriers, which are introduced by electrical injection, is considered to be responsible for the enhancement of hydrogen diffusion, and the microprocess of hydrogen transport has been exploited.