115 resultados para Gap values

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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In2O3 films grown by helicon magnetron sputtering with different thicknesses were characterized by spectroscopic ellipsometry in the energy range from 1.5 to 5.0 eV. Aside from one amorphous sample prepared at room substrate temperature, polycrystalline In2O3 films with cubic crystal structure were confirmed for other four samples prepared at the substrate temperature of 450 A degrees C. Excellent SE fittings were realized by applying 1 and/or 2 terms F&B amorphous formulations, building double layered film configuration models, and further taking account of void into the surface layer based on Bruggeman effective medium approximation for thinner films. Spectral dependent refractive indices and extinction coefficients were obtained for five samples. The curve shapes were well interpreted according to the applied dispersion formulas. Almost similar optical band gap values from 3.76 to 3.84 eV were obtained for five samples by Tauc plot calculation using extinction coefficients under the assumption of direct allowed optical transition mode.

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The Hamiltonian in the framework of eight-band effective-mass approximation of the zinc-blende nanowires and nanorods in the presence of external homogeneous magnetic field is given in the cylindrical coordinate. The electronic structure, optical properties, magnetic energy levels, and g factors of the nanowires and nanorods are calculated. It is found that the electron states consist of many hole-state components, due to the coupling of the conduction band and valence band. For the normal bands which are monotone functions of |k(z)|, long nanorods can be modeled by the nanowires, the energy levels of the nanorods approximately equal the values of the energy band E(k(z)) of the nanowires with the same radius at a special k(z), where k(z) is the wave vector in the wire direction. Due to the coupling of the states, some of the hole energy bands of the nanowires have their highest points at k(z)=0. Especially, the highest hole state of the InSb nanowires is not at the k(z)=0 point. It is an indirect band gap. For these abnormal bands, nanorods can not be modeled by the nanowires. The energy levels of the nanorods show an interesting plait-like pattern. The linear polarization factor is zero, when the aspect ratio L/2R is smaller than 1, and increases as the length increases. The g(z) and g(x) factors as functions of the k(z), radius R and length L are calculated for the wires and rods, respectively. For the wires, the g(z) of the electron ground state increases, and the g(z) of the hole ground state decreases first, then increases with the k(z) increasing. For the rods, the g(z) and g(x) of the electron ground state decrease as the R or the L increases. The g(x) of the hole ground state decreases, the g(z) of the hole ground state increases with the L increasing. The variation of the g(z) of the wires with the k(z) is in agreement with the variation of the g(z) of the rods with the L.

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The biaxial piezospectroscopic coefficient (i.e., the rate of spectral shift with stress) of the electrostimulated near-band-gap luminescence of gallium nitride (GaN) was determined as Pi=-25.8 +/- 0.2 meV/GPa. A controlled biaxial stress field was applied on a hexagonal GaN film, epitaxially grown on (0001) sapphire using a ball-on-ring biaxial bending jig, and the spectral shift of the electrostimulated near-band-gap was measured in situ in the scanning electron microscope. This calibration method can be useful to overcome the lack of a bulk crystal of relatively large size for more conventional uniaxial bending calibrations, which has so far hampered the precise determination of the piezospectroscopic coefficient of GaN. The main source of error involved with the present calibration method is represented by the selection of appropriate values for the elastic stiffness constants of both film and substrate. The ball-on-ring calibration method can be generally applied to directly determine the biaxial-stress dependence of selected cathodoluminescence bands of epilayer/substrate materials without requiring separation of the film from the substrate. (c) 2006 American Institute of Physics.

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We have applied the Green-function method in the GW approximation to calculate quasiparticle energies for the semiconductors GaP and GaAs. Good agreement between the calculated excitation energies and the experimental results was achieved. We obtained calculated direct band gaps of GaP and GaAs of 2.93 and 1.42 eV, respectively, in comparison with the experimental values of 2.90 and 1.52 eV, respectively. An ab initio pseudopotential method has been used to generate basis wave functions and charge densities for calculating the dielectric matrix elements and self-enegies. To evaluate the dynamical effects of the screened interaction, the generalized-plasma-pole model has been utilized to extend the dielectric matrix elements from static results to finite frequencies. We presen the calculated quasiparticle energies at various high-symmetry points of the Brillouin zone and compare them with the experimental results and other calculations.

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The dielectric definition of average energy gap E-g of the chemical bond has been calculated quantitatively in Eu3+-doped 30 lanthanide compounds based on the dielectric theory of chemical bond for complex structure crystals. The relationship between the experimental charge transfer (CT) energy of Eu3+ and the corresponding average energy gap E-g has been studied. The results show that the CT energy increases linearly with increasing of the average energy gap E-g. The linear model is obtained. It allows us to predict the CT position of Eu3+-doped lanthanide compounds with knowledge of the crystal structure and index of refraction. Applied to the Ca4GdO(BO3)(3):Eu and Li2Lu5O4(BO3)(3):Eu crystals, the predicted results of CT energies are in good agreement with the experimental values, and it can be concluded that the lowest CT energy in Li2Lu5O4(BO3)(3):Eu originates from the site of Lu1.

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The influence of muffin-tin approximation on energy band gap was studied using LMTO-ASA (Linear Muffin-Tin Orbital-Atomic Sphere Approximation) approach. Since the diverse data are available for LaX(X=N, P, As, Sb), they are presented in our research as an example in order to test the reliability of our results. Four groups of muffin-tin radii were chosen, they were the fitted muffin-tin radii based on the optical properties of the crystals (the first), 1 : 1 for La : X(the second), 1.5 : 1 for La : X(the third), and a group of radii derived by making the charge in the interstitial space to be zero(the fourth). The results show that the fitted muffin-tin radii (the first group) give the best results compared with experimental values, and the predicted energy band gaps are very sensitive to the choice of muffin-tin radius in comparison with the other groups. The second and the third delivered results somewhere in between, while the fourth provided the worst results compared with the other groups. For the same crystal, with the increase of muffin-tin radius of lanthanum, the calculated energy band gaps decreased, going from semi-conductor to semimetal. This again clearly indicated the sensitivity of energy band structure on muffin-tin approximation.

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III-V pentenary semiconductor AlGaInPAs with a direct band gap of up to 2.0 eV has been grown successfully on GaAs substrates by liquid phase epitaxy;(LPE). With the introduction of the energy bowing parameters of quaternaries, the theoretical calculations agree well with the measured PL peak energy data from pentenary samples.

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Since convective boiling or highly subcooled single-phase forced convection in micro-channels is an effective cooling mechanism with a wide range of applications, more experimental and theoretical studies are required to explain and verify the forced convection heat transfer phenomenon in narrow channels. In this experimental study, we model the convective boiling behavior of water with low latent heat substance Freon 113 (R-113), with the purpose of saving power consumption and visualizing experiments. Both heat transfer and pressure drop characteristics were measured in subcooled and saturated concentric narrow gap forced convection boiling. Data were obtained to qualitatively identify the effects of gap size, pressure, flow rate and wall superheat on boiling regimes and the transition between various regimes. Some significant differences from unconfined forced convection boiling were found,and also, the flow patterns in narrow vertical annulus tubes have been studied quantitatively.

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Based on similarity analyses, a series of experiments have been conducted with a newly established hydro-elastic facility to investigate the transverse vortex-induced vibrations (VIVs) of a submarine pipeline near an erodible sandy seabed under the influence of ocean currents. Typical characteristics of coupling processes between pipe vibration and soil scour in the currents have been summarized for Case 1: pipe is laid above seabed and Case 11: pipe is partially embedded in seabed on the basis of the experimental observations. Pipe vibration and the corresponding local scour are usually two coupled physical processes leading to an equilibrium state. The influence of initial gap-to-diameter ratio (e(0)/D) on the interaction between pipe vibration and local scour has been studied. Experimental results show that the critical values of V-r for the initiation of VIVs of the pipe near an erodible sand bed get bigger with decreasing initial gap-to-diameter ratio within the examined range of e(0)/D (-0.25 < e(0)/D < 0.75). The comparison of the pipe vibrations near an erodible soil with those near a rigid boundary and under wall-free conditions indicates that the vibration amplitudes of the pipe near an erodible sand bed are close to the curve fit under wall-free conditions; nevertheless, for the same stability parameter, the maximum amplitudes for the VIV coupled with local scour increase with the increase of initial gap-to-diameter ratio. (c) 2007 Elsevier Ltd. All rights reserved.

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The growth of InAsxSb1-x films on (100) GaSb substrates by liquid-phase epitaxy (LPE) has been investigated and epitaxial InAs0.3Sb0.7 films with InAs0.9Sb0.09 buffer layers have been successfully obtained. The low X-ray rocking curve FHWM values of InAs0.3Sb0.7 layer shows the high quality of crystal-orientation structure. Hall measurements show that the highest electron mobility in the samples obtained is 2.9 x 10(4) cm(2) V-1 s(-1) and the carrier density is 2.78 x 10(16)cm(-3) at room temperature (RT). The In As0.3Sb0.7 films grown on (10 0) GaSb substrates exhibit excellent optical performance with a cut-off wavelength of 12 mu m. (c) 2007 Elsevier B.V. All rights reserved.

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Most of the existing researches either focus on vortex-induced-vibrations (VIV) of a pipeline near a rigid boundary, or on seabed scour around a fixed pipeline. In the fields, pipeline vibration and seabed scour are actually always coupled. Based on the similarity analysis, a series of tests were conducted with a hydro-elastic facility to investigate the influence of pipe vibration on the local scour and the effects of scour process on the pipeline dynamic responses. Experimental results indicate that, there exist two phases in the process of sand scouring around the pipeline with small embedment, i.e. Phase I: scour beneath pipe without VIV, and Phase II: scour with VIV of pipe. It is also found that the gap-to-diameter ratio (e/D) has much effect upon the scour depth for the fixed pipes. For a given value of e/D, the vibrating pipes with close proximity to seabed may induce a deeper scour hole than the fixed ones. Within the examined gap-to-diameter ratio range (425 < e/D < 0.75), the influences of gap-to-diameter ratio on the maximum values of scour-depth for the case of vibrating pipes are not as much as those for the case of fixed pipes.

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The flow-induced vibration of a cylinder with two degrees of freedom near a rigid wall under the action of steady flow is investigated experimentally. The vibration amplitude and frequency of the cylinder and the vortex shedding frequency at the wake flow region of the cylinder are measured. The influence of gap-to-diameter ratio upon the amplitude response is analyzed. The experimental results indicate that when the reduced velocity (Vr) is in the range of 1.2 < Vr < 2.6, only streamwise vibration with small amplitude occurs, whose frequency is quite close to its natural frequency in the still water. When the reduced velocity Vr > 3.4, both the streamwise and transverse vibrations of the cylinder occur. In this range, the amplitudes of transverse vibration are much larger than those of streamwise vibrations, and the amplitudes of the streamwise vibration also get larger than those at the range of 1.2 < Vr < 2.6. At the range of Vr > 3.4, the frequency of streamwise vibration undergoes a jump at certain values of Vr, at which the streamwise vibrating frequency is twice as much as the transverse one. However, when the streamwise vibration does not experience a jump, its frequency is the same as that of the transverse vibration. The maximum values of second streamwise and transverse vibration amplitudes increase with increasing gap-to-diameter ratios.

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The static and dynamic instabilities of a torsional MEMS/NEMS actuator caused by capillary effects are studied, respectively. An instability number, eta, is defined, and the critical gap distance, g(cr), between the mainplate and the substrate is derived. According to the values of eta and g, the instability criteria of the actuator are presented. The dimensionless motion equation of the MEMS/NEMS torsional actuator is derived when it makes nonlinear oscillation under capillary force. The qualitative analysis of the nonlinear equation is made, and the phase portraits are presented on the phase plane. In addition, the bifurcation phenomena in the system are also analyzed. (C) 2008 Elsevier Inc. All rights reserved.

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In this study, the vortex-induced vibrations of a cylinder near a rigid plane boundary in a steady flow are studied experimentally. The phenomenon of vortex-induced vibrations of the cylinder near the rigid plane boundary is reproduced in the flume. The vortex shedding frequency and mode are also measured by the methods of hot film velocimeter and hydrogen bubbles. A parametric study is carried out to investigate the influences of reduced velocity, gap-to-diameter ratio, stability parameter and mass ratio on the amplitude and frequency responses of the cylinder. Experimental results indicate: (1) the Strouhal number (St) is around 0.2 for the stationary cylinder near a plane boundary in the sub-critical flow regime; (2) with increasing gap-to-diameter ratio (e (0)/D), the amplitude ratio (A/D) gets larger but frequency ratio (f/f (n) ) has a slight variation for the case of larger values of e (0)/D (e (0)/D > 0.66 in this study); (3) there is a clear difference of amplitude and frequency responses of the cylinder between the larger gap-to-diameter ratios (e (0)/D > 0.66) and the smaller ones (e (0)/D < 0.3); (4) the vibration of the cylinder is easier to occur and the range of vibration in terms of V (r) number becomes more extensive with decrease of the stability parameter, but the frequency response is affected slightly by the stability parameter; (5) with decreasing mass ratio, the width of the lock-in ranges in terms of V (r) and the frequency ratio (f/f (n) ) become larger.

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TiO2 coatings are prepared on fused silica with conventional electron beam evaporation deposition. After annealed at different temperatures for four hours, the spectra and XRD patterns of TiO2 thin film are obtained. XRD patterns reveal that only anatase phase can be observed in TiO2 coatings regardless of the different annealing temperatures, and with the increasing annealing temperature, the grain size gradually increases. The relationship between the energy gap and microstructure of anatase is determined and discussed. The quantum confinement effect is observed that with the increasing grain size of TiO2 thin film, the band gap energy shifts from 3.4 eV to 3.21 eV. Moreover, other possible influence of the TiO2 thin-film microstructure, such as surface roughness and thin film absorption, on band gap energy is also expected.