Compact Reconfigurable Binary-Decision-Diagram Logic Circuit on a GaAs Nanowire Network

We describe a reconfigurable binary-decision-diagram logic circuit based on Shannon's expansion of Boolean logic function and its graphical representation on a semiconductor nanowire network. The circuit is reconfigured by using programmable switches that electrically connect and disconnect a small number of branches. This circuit has a compact structure with a small number of devices compared with the conventional look-up table architecture. A variable Boolean logic circuit was fabricated on an etched GaAs nanowire network having hexagonal topology with Schottky wrap gates and SiN-based programmable switches, and its correct logic operation together with dynamic reconfiguration was demonstrated.

Tuning of the two electron states in quantum rings through the spin-orbit interaction

The effect of the Coulomb interaction on the energy spectrum and anisotropic distribution of two electron states in a quantum ring in the presence of Rashba spin-orbit interaction (RSOI) and Dresselhaus SOI (DSOI) is investigated in the presence of a perpendicular magnetic field. We find that the interplay between the RSOI and DSOI makes the single quantum ring behaves like a laterally coupled quantum dot and the interdot coupling can be tuned by changing the strengths of the SOIs. The interplay can lead to singlet-triplet state mixing and anticrossing behavior when the singlet and triplet states meet with increasing magnetic field. The two electron ground state displays a bar-bell-like spatial anisotropic distribution in a quantum ring at a specific crystallographic direction, i.e., [110] or [1 (1) over bar0], which can be switched by reversing the direction of the perpendicular electric field. The ground state exhibits a singlet-triplet state transition with increasing magnetic field and strengths of RSOI and DSOI. An anisotropic electron distribution is predicted which can be detected through the measurement of its optical properties.

Excitonic bright-to-dark transition induced by spin-orbit coupling

The center-of-mass motion of quasi-two-dimensional excitons with spin-orbit coupling is calculated within the framework of effective mass theory. The results indicate that the spin-orbit coupling will induce a controllable bright-to-dark transition in a quasi-two-dimensional exciton system. This procedure can work as a way to increase the lifetime of excitons. (c) 2008 American Institute of Physics.

Nonlinear Rashba model and spin relaxation in quantum wells

We find that the Rashba spin splitting is intrinsically a nonlinear function of the momentum, and the linear Rashba model may overestimate it significantly, especially in narrow-gap semiconductors. A nonlinear Rashba model is proposed, which is in good agreement with the numerical results from the eight-band k center dot p theory. Using this model, we find pronounced suppression of the D'yakonov-Perel' spin relaxation rate at large electron densities, and a nonmonotonic dependence of the resonance peak position of the electron spin lifetime on the electron density in [111]-oriented quantum wells, both in qualitative disagreement with the predictions of the linear Rashba model.

Magnetotransport in two-dimensional electron gas: The interplay between spin-orbit interaction and Zeeman splitting

We investigate theoretically the interplay between Zeeman splitting, Rashba spin-orbit interaction (RSOI), and Dresselhaus spin-orbit interaction (DSOI) and its influence on the magnetotransport property of two-dimensional electron gas (2DEG) at low temperature. Our theoretical results show that the nodes of the beating patterns of the magnetoresistivity rho(xx) for 2DEG with RSOI or DSOI alone depend sensitively on the total spin splitting induced by these three spin splitting mechanisms. It is interesting to find that the eigenstates in the presence of RSOI alone are connected with those in the presence of DSOI alone but with opposite Zeeman splitting by a time-reversal transformation. Consequently, the magnetoresistivities exhibit exactly the same oscillation patterns for these two cases. For strong RSOI or DSOI alone, the magneto-oscillation of rho(xx) shows two distinct periods. For 2DEG with both RSOI and DSOI, the beating patterns vanish for equal RSOI and DSOI strengths and vanishing Zeeman splitting. They will appear again, however, when Zeeman splitting or the difference between RSOI and DSOI strengths increases.

Role of interface dipole in metal gate/high-k effective work function modulation by aluminum incorporation

The interface dipole and its role in the effective work function (EWF) modulation by Al incorporation are investigated. Our study shows that the interface dipole located at the high-k/SiO2 interface causes an electrostatic potential difference across the metal/high-k interface, which significantly shifts the band alignment between the metal and high-k, consequently modulating the EWF. The electrochemical potential equalization and electrostatic potential methods are used to evaluate the interface dipole and its contribution. The calculated EWF modulation agrees with experimental data and can provide insight to the control of EWF in future pMOS technology.

Single-electron multiple-valued memory using ultra-small floating gate metal-oxide-semiconductor field effect transistor

This paper proposes a novel single-electron multiple-valued memory. It is a metal-oxide-semiconductor field effect transistor (MOS)-type memory with multiple separate control gates and floating gate layer, which consists of nano-crystal grains. The electron can tunnel among the grains (floating gates) and between the floating gate layer and the MOS channel. The memory can realize operations of 'write', 'store' and 'erase' of multiple-valued signals exceeding three values by controlling the single electron tunneling behavior. We use Monte Carlo method to simulate the operation of single-electron four-valued memory. The simulation results show that it can operate well at room temperature.

Photonic switch and NOT logic gate based on the hybrid integration of a GaAsVCSEL and a GaAs MISS

The hybrid integrated photonic switch and not logic gate based on the integration of a GaAs VCSEL (Vertical Cavity Surface Emitting Lasers) and a MISS (Metal-Insulator-Semiconductor Switches) device are reported. The GaAs VCSEL is fabricated by selective etching and selective oxidation. The Ultra-Thin semi-Insulating layer (UTI) of the GaAs MISS is formed by using oxidation of A1As that is grown by MBE. The accurate control of UTI and the processing compatibility between VCSEL and MISS are solved by this procedure. Ifa VCSEL is connected in series with a MISS, the integrated device can be used as a photonic switch, or a light amplifier. A low switching power (10 mu W) and a good on-off ratio (17 dB contrast) have been achieved. If they are connected in parallel, they perform a photonic NOT gate operation.

Gate controlled Aharonov-Bohm-type oscillations from single neutral excitons in quantum rings

We report on a magnetophotoluminescence study of single self-assembled semiconductor nanorings which are fabricated by molecular-beam epitaxy combined with AsBr3 in situ etching. Oscillations in the neutral exciton radiative recombination energy and in the emission intensity are observed under an applied magnetic field. Further, we control the period of the oscillations with a gate potential that modifies the exciton confinement. We infer from the experimental results, combined with calculations, that the exciton Aharonov-Bohm effect may account for the observed effects.

A Novel Optical Gate by Integration of a Photodiode and an Electroabsorption Modulator

A compact and stable three-port optical gate has been successfully fabricated by monolithically integrating asimple photodiode and an electroabsorption modulator. The gate shows an excellent DC logic "and" function with differ-ent load resistors. Its dynamical characteristics without packaging have also been measured. We observed a dynamic extinc-tion ratio of over 7dB with a 950Ω load resistor and a 7mW control light power at 622Mbit/s.