Nonlinear Constitutive Behavior Of Ferroelectric Materials

The ferroelectric specimen is considered as an aggregation of many randomly oriented domains. According to this mechanism, a multi-domain mechanical model is developed in this paper. Each domain is represented by one element. The applied stress and electric field are taken to be the stress and electric field in the formula of the driving force of domain switching for each element in the specimen. It means that the macroscopic switching criterion is used for calculating the volume fraction of domain switching for each element. By using the hardening relation between the driving force of domain switching and the volume fraction of domain switching calibrated, the volume fraction of domain switching for each element is calculated. Substituting the stress and electric field and the volume fraction of domain switching into the constitutive equation of ferroelectric material, one can easily get the strain and electric displacement for each element. The macroscopic behavior of the ferroelectric specimen is then directly calculated by volume averaging. Meanwhile, the nonlinear finite element analysis for the ferroelectric specimen is carried out. In the finite element simulation, the volume fraction of domain switching for each element is calculated by using the same method mentioned above. The interaction between different elements is taken into account in the finite element simulation and the local stress and electric field for each element is obtained. The macroscopic behavior of the specimen is then calculated by volume averaging. The computation results involve the electric butterfly shaped curves of axial strain versus the axial electric field and the hysteresis loops of electric displacement versus the electric field for ferroelectric specimens under the uniaxial coupled stress and electric field loading. The present theoretical prediction agrees reasonably with the experimental results.

Electromechanical influence of crack velocity at bifurcation for poled ferroelectric materials

The piezoelastodynamic field equations are solved to determine the crack velocity at bifurcation for poled ferroelectric materials where the applied electrical field and mechanical stress can be varied. The underlying physical mechanism, however, may not correspond to that assumed in the analytical model. Bifurcation has been related to the occurrence of a pair of maximum circumferential stress oriented symmetrically about the moving crack path. The velocity at which this behavior prevails has been referred to as the limiting crack speed. Unlike the classical approach, bifurcation will be identified with finite distances ahead of a moving crack. Nucleation of microcracks can thus be modelled in a single formulation. This can be accomplished by using the energy density function where fracture initiation is identified with dominance of dilatation in relation to distortion. Poled ferroelectric materials are selected for this study because the microstructure effects for this class of materials can be readily reflected by the elastic, piezoelectic and dielectric permittivity constants at the macroscopic scale. Existing test data could also shed light on the trend of the analytical predictions. Numerical results are thus computed for PZT-4 and compared with those for PZT-6B in an effort to show whether the branching behavior would be affected by the difference in the material microstructures. A range of crack bifurcation speed upsilon(b) is found for different r/a and E/sigma ratios. Here, r and a stand for the radial distance and half crack length, respectively, while E and a for the electric field and mechanical stress. For PZT-6B with upsilon(b) in the range 100-1700 m/s, the bifurcation angles varied from +/-6degrees to +/-39degrees. This corresponds to E/sigma of -0.072 to 0.024 V m/N. At the same distance r/a = 0.1, PZT-4 gives upsilon(b) values of 1100-2100 m/s; bifurcation angles of +/-15degrees to +/-49degrees; and E/sigma of -0.056 to 0.059 V m/N. In general, the bifurcation angles +/-theta(0) are found to decrease with decreasing crack velocity as the distance r/a is increased. Relatively speaking, the speed upsilon(b) and angles +/-theta(0) for PZT-4 are much greater than those for PZT-6B. This may be attributed to the high electromechanical coupling effect of PZT-4. Using upsilon(b)(0) as a base reference, an equality relation upsilon(b)(-) < upsilon(b)(0) < upsilon(b)(+) can be established. The superscripts -, 0 and + refer, respectively, to negative, zero and positive electric field. This is reminiscent of the enhancement and retardation of crack growth behavior due to change in poling direction. Bifurcation characteristics are found to be somewhat erratic when r/a approaches the range 10(-2)-10(-1) where the kinetic energy densities would fluctuate and then rise as the distance from the moving crack is increased. This is an artifact introduced by the far away condition of non-vanishing particle velocity. A finite kinetic energy density prevails at infinity unless it is made to vanish in the boundary value problem. Future works are recommended to further clarify the physical mechanism(s) associated with bifurcation by means of analysis and experiment. Damage at the microscopic level needs to be addressed since it has been known to affect the macrocrack speeds and bifurcation characteristics. (C) 2002 Published by Elsevier Science Ltd.

Phase mapping of domain kinetics in lithium niobate by digital holographic interferometry

The phase mapping of domain kinetics under the uniform steady-state electric field is achieved and investigated in the LiNbO3 crystals by digital holographic interferometry. We obtained the sequences of reconstructed three-dimensional and two-dimensional wave-field phase distributions during the electric poling in the congruent and near stoichiometric LiNbO3 crystals. The phase mapping of individual domain nucleation and growth in the two crystals are obtained. It is found that both longitudinal and lateral domain growths are not linear during the electric poling. The phase mapping of domain wall motions in the two crystals is also obtained. Both the phase relaxation and the pinning-depinning mechanism are observed during the domain wall motion. The residual phase distribution is observed after the high-speed domain wall motion. The corresponding analyses and discussions are proposed to explain the phenomena.

Energy Principle And Nonlinear Electric-Mechanical Behavior Of Ferroelectric Ceramics

Many experimental observations have shown that a single domain in a ferroelectric material switches by progressive movement of domain walls, driven by a combination of electric field and stress. The mechanism of the domain switch involves the following steps: initially, the domain has a uniform spontaneous polarization; new domains with the reverse polarization direction nucleate, mainly at the surface, and grow though the crystal thickness; the new domain expands sideways as a new domain continues to form; finally, the domain switch coalesces to complete the polarization reversal. According to this mechanism, the volume fraction of the domain switching is introduced in the constitutive law of the ferroelectric material and used to study the nonlinear constitutive behavior of a ferroelectric body in this paper. The principle of stationary total potential energy is put forward in which the basic unknown quantities are the displacement u(i), electric displacement D-i and volume fraction rho(I) of the domain switching for the variant I. The mechanical field equation and a new domain switching criterion are obtained from the principle of stationary total potential energy. The domain switching criterion proposed in this paper is an expansion and development of the energy criterion established by Hwang et al. [ 1]. Based on the domain switching criterion, a set of linear algebraic equations for determining the volume fraction rho(I) of domain switching is obtained, in which the coefficients of the linear algebraic equations only contain the unknown strain and electric fields. If the volume fraction rho(I) of domain switching for each domain is prescribed, the unknown displacement and electric potential can be obtained based on the conventional finite element procedure. It is assumed that a domain switches if the reduction in potential energy exceeds a critical energy barrier. According to the experimental results, the energy barrier will strengthen when the volume fraction of the domain switching increases. The external mechanical and electric loads are increased step by step. The volume fraction rho(I) of domain switching for each element obtained from the last loading step is used as input to the constitutive equations. Then the strain and electric fields are calculated based on the conventional finite element procedure. The finite element analysis is carried out on the specimens subjected to uniaxial coupling stress and electric field. Numerical results and available experimental data are compared and discussed. The present theoretic prediction agrees reasonably with the experimental results.

V5+-doped Bi3.4Yb0.6Ti3O12 fatigue resistant ferroelectric thin films

In this paper, a serial of Bi3.4Yb0.6Ti3-xVxO12 (BYTV) thin film with different V5+ contents were deposited on Pt/Ti/SiO2/Si substrates by chemical solution deposition (CSD). The crystallized phase and electrical properties of the films were investigated using X-ray diffraction, polarization hysteresis loops, leakage current-voltage, and fatigue test. From our experimental results, it can be found that the ferroelectric properties can be improved greatly using V5+-doped in Bi3.4Yb0.6Ti3O12 (BYT) thin film, compared with the reported BYT thin film. The remanent polarization was enhanced and excellent leakage current characteristic with 10(-11)A at the bias voltage of 4V, which is much lower than the BYT thin film or some reported bismuth layer-structure ferroelectric films. Fatigue test shows that the fabricated films have good anti-fatigue characteristic after 10(10) switching cycles. (c) 2008 Published by Elsevier B.V.

Effects of Microstructural Heterogeneity on the Spallation Behavior of Materials

It is of utmost importance to understand the spallation behaviour of heterogeneous materials. In this paper, a driven nonlinear threshold model with stress fluctuation is presented to study the effects of microstructural heterogeneity on continuum damage evolution. The spallation behavior of heterogeneity material is analyzed with this model. The heterogeniety of mesoscopic units is characterized in terms of Weibull modulus m of strength distibution and stress fluctuation parameter k. At high stress, the maximum damage increases with m; while at low stress, the maximum damage decreases. In addition, for low stress, severe stress fluctuation causes higher damage; while for high stress, causes lower damage.

Fracture mechanics of piezoelectric materials

This paper presents an analysis of crack problems in homogeneous piezoelectrics or on the interfaces between two dissimilar piezoelectric materials based on the continuity of normal electric displacement and electric potential across the crack faces. The explicit analytic solutions are obtained for a single crack in an infinite piezoelectric or on the interface of piezoelectric bimaterials. For homogeneous materials it is found that the normal electric displacement D-2, induced by the crack, is constant along the crack faces which depends only on the remote applied stress fields. Within the crack slit, the perturbed electric fields induced by the crack are also constant and not affected by the applied electric displacement fields. For bimaterials, generally speaking, an interface crack exhibits oscillatory behavior and the normal electric displacement D-2 is a complex function along the crack faces. However, for bimaterials, having certain symmetry, in which an interface crack displays no oscillatory behavior, it is observed that the normal electric displacement D-2 is also constant along the crack faces and the electric field E-2 has the singularity ahead of the crack tip and has a jump across the interface. Energy release rates are established for homogeneous materials and bimaterials having certain symmetry. Both the crack front parallel to the poling axis and perpendicular to the poling axis are discussed. It is revealed that the energy release rates are always positive for stable materials and the applied electric displacements have no contribution to the energy release rates.

FEM Simulations and Optimization about Residual Stresses in Coating Structures with Functionally Graded Materials Layer

An elasto-plastic finite element method is developed to predict the residual stresses of thermal spraying coatings with functionally graded material layer. In numerical simulations, temperature sensitivity of various material constants is included and mix

Analysis of strip electric saturation model of crack problem in piezoelectric materials

This paper presents a fully anisotropic analysis of strip electric saturation model proposed by Gao et al. (1997) (Gao, H.J., Zhang, T.Y., Tong, P., 1997. Local and global energy release rates for an electrically yielded crack in a piezoelectric ceramic. J. Mech. Phys. Solids, 45, 491-510) for piezoelectric materials. The relationship between the size of the strip saturation zone ahead of a crack tip and the applied electric displacement field is established. It is revealed that the critical fracture stresses for a crack perpendicular to the poling axis is linearly decreased with the increase of the positive applied electric field and increases linearly with the increase of the negative applied electric field. For a crack parallel to the poring axis, the failure stress is not effected by the parallel applied electric field. In order to analyse the existed experimental results, the stress fields ahead of the tip of an elliptic notch in an infinite piezoelectric solid are calculated. The critical maximum stress criterion is adopted for determining the fracture stresses under different remote electric displacement fields. The present analysis indicates that the crack initiation and propagation from the tip of a sharp elliptic notch could be aided or impeded by an electric displacement field depending on the field direction. The fracture stress predicted by the present analysis is consistent with the experimental data given by Park and Sun (1995) (Park, S., Sun, C.T., 1995. Fracture criteria for piezoelectric materials. J. Am. Ceram. Soc 78, 1475-1480).

3D Anisotropic Elastoplastic-Damage Model and its Application in Simulating the Behavior of Rock Materials

A 3D anisotropic elastoplastic-damage model was presented based on continuum damage mechanics theory. In this model, the tensor decomposition technique is employed. Combined with the plastic yield rule and damage evolution, the stress tensor in incremental format is obtained. The derivate eigenmodes in the proposed model are assumed to be related with the uniaxial behavior of the rock material. Each eigenmode has a corresponding damage variable due to the fact that damage is a function of the magnitude of the eigenstrain. Within an eigenmodes, different damage evolution can be used for tensile and compressive loadings. This model was also developed into finite element code in explicit format, and the code was integrated into the well-known computational environment ABAQUS using the ABAQUS/Explicit Solver. Numerical simulation of an uniaxial compressive test for a rock sample is used to examine the performance of the proposed model, and the progressive failure process of the rock sample is unveiled.

A micromechanical damage theory for brittle materials with small cracks

For brittle solids containing numerous small cracks, a micromechanical damage theory is presented which accounts for the interactions between different small cracks and the effect of the boundary of a finite solid, and includes growth of the pre-existing small cracks. The analysis is based on a superposition scheme and series expansions of the complex potentials. The small crack evolution process is simulated through the use of fracture mechanics incorporating appropriate failure criteria. The stress-strain relations are obtained from the micromechanics analysis. Typical examples are given to illustrate the potential capability of the proposed theory. These results show that the present method provides a direct and efficient approach to deal with brittle finite solids containing multiple small cracks. The stress-strain relation curves are evaluated for a rectangular plate containing small cracks.

Vaporization of heated materials into discharge plasmas

The vaporization of condensed materials in contact with high-current discharge plasmas is considered. A kinetic numerical method named direct simulation Monte Carlo (DSMC) and analytical kinetic approaches based on the bimodal distribution function approximation are employed. The solution of the kinetic layer problem depends upon the velocity at the outer boundary of the kinetic layer which varies from very small, corresponding to the high-density plasma near the evaporated surface, up to the sound speed, corresponding to evaporation into vacuum. The heavy particles density and temperature at the kinetic and hydrodynamic layer interface were obtained by the analytical method while DSMC calculation makes it possible to obtain the evolution of the particle distribution function within the kinetic layer and the layer thickness.

Measurement of Mechanical Properties of MEMS Materials

微电子机械系统（MEMS）技术的迅速崛起,推动了所用材料微尺度力学性能测试技术的发展.首先按作用方式将实验分成压痕/划痕、弯曲、拉伸、扭转四大类,系统介绍检测MEMS材料微尺度力学性能的微型试样、测试方法及其实验结果.测试材料主要有硅、氧化硅、氮化硅和一些金属.实验结果主要包括基本的力学性能参数如弹性模量、残余应力、屈服强度、断裂强度和疲劳强度等.最后,简要分析了未来的发展需求.

Effects Analysis on the Mechanical Properties of Nanocrystalline Materials

Nanocrystalline materials are characterized by a typical grain size from 1 to 100nm. In order to study the nanocrystalline properties of nanocrystalline materials, we chose nanocrystalline coppers as the research object. The uniaxial tensile deformation of computer produced nanocrystalline coppers is simulated by using molecular dynamics with Finnis-Sinclair potential. The mean grain size of simulated nanocrystalline coppers is varied within the 5.38 to 1.79 nm range. The strength, Young's modulus and stress-strain are strongly depended on the grain size and nanocrystalline structure. The simulated nanocrystalline coppers show a reverse Hall-Petch effect.