The costs and benefits in an unusual symbiosis: experimental evidence that bitterling fish (Rhodeus sericeus) are parasites of unionid mussels in Europe

Interspecific symbiotic relationships involve a complex network of interactions, and understanding their outcome requires quantification of the costs and benefits to both partners. We experimentally investigated the costs and benefits in the relationship between European bitterling fish (Rhodeus sericeus) and freshwater mussels that are used by R. sericeus for oviposition. This relationship has hitherto been thought mutualistic, on the premise that R. sericeus use mussels as foster parents of their embryos while mussels use R. sericeus as hosts for their larvae. We demonstrate that R. sericeus is a parasite of European mussels, because it (i) avoids the cost of infection by mussel larvae and (ii) imposes a direct cost on mussels. Our experiments also indicate a potential coevolutionary arms race between bitterling fishes and their mussel hosts; the outcome of this relationship may differ between Asia, the centre of distribution of bitterling fishes, and Europe where they have recently invaded.

A fast-settling frequency-presetting PLL frequency synthesizer with process variation compensation and spur reduction

This paper proposes a fast-settling frequency-presetting PLL frequency synthesizer. A mixed-signal VCO and a digital processor are developed to accurately preset the frequency of VCO and greatly reduce the settling time. An auxiliary tuning loop is introduced in order to reduce reference spur caused by leakage current. The digital processor can automatically compensate presetting frequency variation with process and temperature, and control the operation of the auxiliary tuning loop. A 1.2 GHz integer-N synthesizer with 1 MHz reference input Was implemented in a 0.18μm process. The measured results demonstrate that the typical settling time of the synthesizer is less than 3μs,and the phase noise is -108 dBc/Hz@1MHz.The reference spur is -52 dBc.

CHARGE COMPENSATION AND LUMINOUS CENTERS IN CAF2-CE3+

We synthesize some powder phosphors of CaF2:Ce3+ under different reaction conditions, find three luminous centres, and demonstrate that each luminous centre is formed with different charge compensation procedures.

CHARGE COMPENSATION AND VALENCY STABILITY OF EU(II)-DOPED KMGF3 CRYSTAL

The spectrochemistry of Eu2+-doped perovskite KMgF3 was examined and discussed. Eu2+ can replace some of the K+ in the KMgF3 crystal, and simultaneously the corresponding cation hole can be compensated with the F- or O2- in the matrix. The emission intensity of Eu2+ due to the f --> f transition increased when Na+, Rb+ or F- was doped in KMgF3:Eu2+. Two mechanisms of charge compensation were proposed. No obvious valence change of Eu2+ occurred in KMgF3:Eu2+ after calcinating at high temperature, e.g. 900-degrees-C. It was found that the valence stability of Eu2+ improved after incorporation into the matrix.

Gap states of hydrogenated amorphous silicon near and above the threshold of microcrystallinity with subtle boron compensation

The effects of hydrogen dilution, subtle boron compensation, and light-soaking on the gap states of hydrogenated amorphous silicon films (a-Si:H) near and above the threshold of microcrystallinity have been investigated in detail by the constant photocurrent method and the improved phase-shift analysis of modulated photocurrent technique. It is shown that high hydrogen dilution near the threshold of microcrystallinity leads to a more ordered network structure and to the redistribution of gap states; it gives rise to a small peak at about 0.55 eV and a shoulder at about 1.2 eV below the conduction band edge, which are associated with the formation of microcrystallites embedded in the amorphous silicon host matrix. A concurrent subtle boron compensation is demonstrated to prevent excessive formation of microcrystallinity, and to help promote the growth of the ordered regions and reduce the density of gap defect states, particularly those associated with microcrystallites. Hydrogen-diluted and appropriately boron-compensated a-Si:H films deposited near the threshold of microcrystallinity show the lowest density of the defects in both the annealed and light-soaked states, and hence, the highest performance and stability. (C) 2001 American Institute of Physics.

Pulse compression by filamentation in argon with an acoustic optical programmable dispersive filter for predispersion compensation

We have experimentally demonstrated pulses 0.4 mJ in duration smaller than 12 fs; with an excellent spatial beam profile by self-guided propagation in argon. The original 52 fs pulses from the chirped pulsed amplification laser system are first precompressed to 32 fs by inserting an acoustic optical programmable dispersive filter instrument into the laser system for spectrum reshaping and dispersion compensation, and the pulse spectrum is subsequently broadened by filamentation in an argon cell. By using chirped mirrors for post-dispersion compensation, the pulses are successfully compressed to smaller than 12 fs.

Influence of deep level defects on electrical compensation in semi-insulating InP materials

In this paper, we analyze and compare electrical compensation and deep level defects in semi-insulating ( SI) materials prepared by Fe-doping and high temperature annealing of undoped InP. Influence of deep level defects in the SI-InP materials on the electrical compensation has been studied thermally stimulated current spectroscopy (TSC). Electrical property of the Fe-doped SI-InP is deteriorated due to involvement of a high concentration of deep level defects in the compensation. In contrast, the concentration of deep defects is very low in high temperature annealed undoped SI-InP in which Fe acceptors formed by diffusion act as the only compensation centre to pin the Fermi level, resulting in excellent electrical performance. A more comprehensive electrical compensation model of SI-InP has been given based on the research results.

RADIATIVE RECOMBINATION IN N-TYPE AND P-TYPE GAAS COMPENSATED WITH LI

We report fundamental changes of the radiative recombination in a wide range of n-type and p-type GaAs after diffusion with the group-I element Li. These optical properties are found to be a bulk property and closely related to the electrical conductivity of the samples. In the Li-doped samples the radiative recombination is characterized by emissions with excitation-dependent peak positions which shift to lower energies with increasing degree of compensation and concentration of Li. These properties are shown to be in qualitative agreement with fluctuations of the electrostatic potential in strongly compensated systems. For Li-diffusion temperatures above 700-800-degrees-C semi-insulating conditions with electrical resistivity exceeding 10(7) OMEGA cm are obtained for all conducting starting materials. In this heavy Li-doping regime, the simple model of fluctuating potentials is shown to be inadequate for explaining the. experimental observations unless the number of charged impurities is reduced through complexing with Li. For samples doped with low concentrations of Li, on the other hand, the photoluminescence properties are found to be characteristic of impurity-related emissions.

Pulse Compression by Filamentation in Argon with an Acoustic Optical Programmable Dispersive Filter for Predispersion Compensation

We have experimentally demonstrated pulses 0.4 mJ in duration smaller than 12 fs with an excellent spatial beam profile by self-guided propagation in argon. The original 52 fs pulses from the chirped pulsed amplification laser system are first precompressed to 32 fs by inserting an acoustic optical programmable dispersive filter instrument into the laser system for spectrum reshaping and dispersion compensation, and the pulse spectrum is subsequently broadened by filamentation in an argon cell. By using chirped mirrors for post-dispersion compensation, the pulses are successfully compressed to smaller than 12 fs.