Use of PFU protozoan community structural and functional characteristics in assessment of water quality in a large, highly polluted freshwater lake in China

Structural and functional parameters of protozoan communities colonizing on PFU (polyurethane foam unit) artificial substrate were assessed as indicators of water quality in the Chaohu Lake, a large, shallow and highly polluted freshwater lake in China. Protozoan communities were sampled 1, 3, 6, 9 and 14 days after exposure of PFU artificial substrate in the lake during October 2003. Four study stations with the different water quality gradient changes along the lake were distinguishable in terms of differences in the community's structural (species richness, individual abundance, etc.) and functional parameters (protozoan colonization rates on PFU). The concentrations of TP, TN, COD and BOD as the main chemical indicators of pollution at the four sampling sites were also obtained each year during 2002-2003 for comparison with biological parameters. The results showed that the species richness and PFU colonization rate decreased as pollution intensity increased and that the Margalef diversity index values calculated at four sampling sites also related to water quality. The three functional parameters based on the PFU colonization process, that is, S-eq, G and T-90%, were strongly related to the pollution status of the water. The number of protozoan species colonizing on PFU after exposure of 1 to 3 days was found to give a clear comparative indication of the water quality at the four sampling stations. The research provides further evidence that the protozoan community may be utilized effectively in the assessment of water quality and that the PFU method furnishes rapid, cost-effective and reliable information that may be useful for measuring responses to pollution stress in aquatic ecosystems.

Effect of the technology of implanting nitrogen into buried oxide on the radiation hardness of the top gate oxide for partially depleted SOIPMOSFET

The effect of implanting nitrogen into buried oxide on the top gate oxide hardness against total irradiation does has been investigated with three nitrogen implantation doses (8 x 10(15), 2 x 10(16) and 1 x 10(17) cm(-2)) for partially depleted SOI PMOSFET. The experimental results reveal the trend of negative shift of the threshold voltages of the studied transistors with the increase of nitrogen implantation dose before irradiation. After the irradiation with a total dose of 5 x 10(5) rad(Si) under a positive gate voltage of 2V, the threshold voltage shift of the transistors corresponding to the nitrogen implantation dose 8 x 10(15) cm(-2) is smaller than that of the transistors without implantation. However, when the implantation dose reaches 2 x 10(16) and 1 x 10(17) cm(-2), for the majority of the tested transistors, their top gate oxide was badly damaged due to irradiation. In addition, the radiation also causes damage to the body-drain junctions of the transistors with the gate oxide damaged. All the results can be interpreted by tracing back to the nitrogen implantation damage to the crystal lattices in the top silicon.

Effects of the technology of implanting nitrogen into buried oxide layer on the characteristics of partially depleted SOI nMOSFET

The effects, caused by the process of the implantation of nitrogen in the buried oxide layer of SIMOX wafer, on the characteristics of partially depleted silicon-on-insulator nMOSFET have been studied. The experimental results show that the channel electron mobilities of the devices fabricated on the SIMON (separation by implanted oxygen and nitrogen) wafers are lower than those of the devices made on the SIMOX (separation by implanted oxygen) wafers. The devices corresponding to the lowest implantation dose have the lowest mobility within the range of the implantation dose given in this paper. The value of the channel electron mobility rises slightly and tends to a limit when the implantation dose becomes greater. This is explained in terms of the rough Si/SiO2 interface due to the process of implantation of nitrogen. The increasing negative shifts of the threshold voltages for the devices fabricated on the SIMON wafers are also observed with the increase of implanting dose of nitrogen. However, for the devices fabricated on the SIMON wafers with the lowest dose of implanted nitrogen in this paper, their threshold voltages are slightly larger on the average than those prepared on the SIMOX wafers. The shifts are considered to be due to the increment of the fixed oxide charge in SiO2 layer and the change of the density of the interface-trapped charge with the value and distribution included. In particular, the devices fabricated on the SIMON wafers show a weakened kink effect, compared to the ones made on the SIMOX wafers.

Color filter-less technology of LED back light for LCD-TV - art. no. 68410G

Back Light Unit (BLU) and Color Filter are the two key components for the perfect color display of Liquid Crystal Display (LCD) device. LCD can not light actively itself, so a form of illumination, Back Light Unit is needed for its display. The color filter which consists of RGB primary colors, is used to generate three basic colors for LCD display. Traditional CCFL back light source has several disadvantages, while LED back light technology makes LCD obtain quite higher display quality than the CCFL back light. LCD device based on LED back light owns promoted efficiency of display. Moreover it can generate color gamut above 100% of the NTSC specification. Especially, we put forward an idea of Color Filter-Less technology that we design a film which is patterned of red and green emitting phosphors, then make it be excited by a blue light LED panel we fabricate, for its special emitting mechanism, this film can emit RGB basic color, therefore replace the color filter of LCD device. This frame typically benefits for lighting uniformity and provide pretty high light utilization ratio. Also simplifies back light structure thus cut down the expenses.

Study on the technology of thermal cracking of paraffin to alpha olefins

Alpha olefins are mainly produced from paraffin cracking in China, but their quality is not good because of bad quality of cracking feed and outdated technology. The technology of paraffin once-through cracking, paraffin recycle cracking of removing the heavy fraction after wax vaporizing and that of removing the heavy fraction before wax vaporizing were investigated in this paper. It was found that the technology of paraffin recycle cracking of removing the heavy fraction before wax vaporizing is new and better under the same operating conditions. Using hard paraffin (mp 54-56 degrees C) as feed, the high-quality alpha olefins products (C-5-C-21) containing more than 97 wt% of olefins and more than 88 wt% of alpha olefins are produced under optimum process conditions, which are a steam to paraffin ratio of 15 wt%, process temperature of 600 degrees C, low hydrocarbon partial pressure and residence time of 2 s. In addition, with the technology of the second injecting steam in ethylene cracking used in paraffin cracking, producing coke in paraffin cracking furnace has been markedly reduced.

Size hierarchies affecting the social interactions and growth of juvenile Japanese flounder, Paralichthys olivaceus

Japanese flounder Paralichthys olivaceus (T. & S.)juveniles were size-graded and divided into three groups (small, large, and mixture of small and large flounder), and their social interactions (feeding, aggressive attacking and activity) and growth were investigated. The growth of the small flounder was markedly suppressed by the presence of the large flounder. Large flounder did not significantly suppress the overall food intake of the small flounder but exhibited high aggressive attacking on them and consequently inhibited their activity. Size dominance showed little influence on the aggressive behavior, feeding, activity and growth of the large flounder. The large flounder could not effectively defend the food in excess during the experiments ruling out disproportional food acquisition as the primary mechanism responsible for the size hierarchy effect. Aggressive interaction of the large flounder on the small flounder might be an important cause for the growth retardation of the small flounder. In culture, size grading could markedly improve the growth and survival of the early juvenile flounder. (C) 2004 Elsevier B.V. All rights reserved.