Liquid phase epitaxy growth of AlxGayIn1-x-yPzAs1-zGaAs with direct band gap up to 2.0 eV

III-V pentenary semiconductor AlGaInPAs with a direct band gap of up to 2.0 eV has been grown successfully on GaAs substrates by liquid phase epitaxy;(LPE). With the introduction of the energy bowing parameters of quaternaries, the theoretical calculations agree well with the measured PL peak energy data from pentenary samples.

EV共聚物序列结构的~(13)C NMR研究

本工作以EV共聚物为研究对象，明确地提出了共聚物的序列结构与其~(13)C NMR谱，包括符号表示在内的一致性问题。通过对EVAc共聚物~(13)C NMR谱的分析认为，共聚物的序列结构与其~(13)C NMR谱之间存在着某种内在的联系。我们从EV共聚物序列结构的符号表示和Bovey关系出发，阐述了它们之间的一致性，即一一对应关系，并发现了EV共聚物~(13)C NMR谱的两种类型，提出了利用取代基参数进行EV共聚物~(13)C NMR谱分类的判别标准及其衍生出的两种判别方法，阐述了关于EV共聚物~(13)C NMR谱峰分布的预见性。

FIELD-EFFECT ON THERMAL EMISSION FROM THE 0.40 EV ELECTRON LEVEL IN INGAP

Results are reported of electric-field dependence on thermal emission of electrons from the 0.40 eV level at various temperatures in InGaP by means of deep-level transient spectroscopy. The data are analyzed according to the Poole-Frankel emission from the potentials which are assumed to be Coulombic, square well, and Gaussian, respectively. The emission mte from this level is strongly field dependent. It is found that the Gaussian potential model is more reasonable to describe the phosphorus-vacancy-induced potential in InGaP than the Coulombic and square-well ones.

DIRECT ION-BEAM DEPOSITION OF CARBON-FILMS ON SILICON IN THE ION ENERGY-RANGE OF 15-500 EV

Direct ion beam deposition of carbon films on silicon in the ion energy range of 15-500 eV and temperature range of 25-800-degrees-C has been studied. The work was carried out using mass-separated C+ and CH3+ ions under ultrahigh vacuum. The films were characterized with x-ray photoelectron spectroscopy, Raman spectroscopy, transmission electron microscopy, and transmission electron diffraction analysis. In the initial stage of the deposition, carbon implanted into silicon induced the formation of silicon carbide, even at room temperature. Further carbon ion bombardment then led to the formation of a carbon film. The film properties were sensitive to the deposition temperature but not to the ion energy. Films deposited at room temperature consisted mainly of amorphous carbon. Deposition at a higher temperature, or post-deposition annealing, led to the formation of microcrystalline graphite. A deposition temperature above 800-degrees-C favored the formation of microcrystalline graphite with a preferred orientation in the (0001) direction. No evidence of diamond formation in these films was observed.

Investigation of electrochemical charging behaviors of "naked" gold nanoparticles ensembles in aqueous media

Gold nanopartides were Immobilized onto the electrode surface by simple self-assembly technique. Interestingly, the ensembles of these nanopartides exhibit quantized charging behaviors in aqueous solution. Possible mechanism for such behaviors was proposed.

Studies of electrochemical quantized capacitance charging of surface ensembles of silver nanoparticles

CTAB-stabilized silver nanoparticles were synthesized by NaBH4 reduction. The as-prepared nanoparticles can be self-assembled on 3-mercaptopropionic acid (MPA) modified gold electrode, which was supported strongly by XPS measurements. Exceptional long-term stability of the as-prepared colloidal silver aqueous solution and the desorption of silver nanoparticle ensemble on MPA after alcohol rinsing proved that these CTAB molecules adsorbed on silver core formed interdigitated bilayer structure. DPV and differential capacitance measurements were performed to characterize the as-prepared silver nanoparticle ensemble. and the interesting quantized capacitance charging behaviors were observed.

EV共聚物序列中的两种结构因素

系统描述了ＥＶ共聚物序列中两种结构因素对共聚物主链中亚甲基和次甲基１３ＣＮＭＲ化学位移的贡献，将ＳＣＳ方法与半经验方法结合起来，阐明了常数项δＬＥ和δ０的物理意义，提出了以聚乙烯链反式构象化学位移δｔ为基准计算上述亚甲基和次甲基化学位移的公式：δｃ＝δｔ＋ΣｎｉＳｉ＋ΣＰｊγｊ并在此基础上，讨论了聚乙烯，聚丙烯的特殊情况和乙丙共聚物的链结构.

Investigation of Mn-Implanted n-Si by Low-Energy Ion Beam Deposition

Mn ions were implanted to n-type Si(0 0 1) single crystal by low-energy ion beam deposition technique with an energy of 1000 eV and a dose of 7.5 x 10^{17} cm^{-2}. The samples were held at room temperature and at 300degreesC during implantation. Auger electron spectroscopy depth profiles of samples indicate that the Mn ions reach deeper in the sample implanted at 300degreesC than in the sample implanted at room temperature. X-ray diffraction measurements show that the structure of the sample implanted at room temperature is amorphous while that of the sample implanted at 300degreesC is crystallized. There are no new phases found except silicon both in the two samples. Atomic force microscopy images of samples indicate that the sample implanted at 300degreesC has island-like humps that cover the sample surface while there is no such kind of characteristic in the sample implanted at room temperature. The magnetic properties of samples were investigated by alternating gradient magnetometer (AGM). The sample implanted at 300degreesC shows ferromagnetic behavior at room temperature.

Barium-Functionalized Multiwalled Carbon Nanotube Yarns As Low-Work-Function Thermionic Cathodes

Barium-functionalized multiwalled carbon nanotube yarns were fabricated by drawing and twisting multiwalled carbon nanotube forests through a solution containing barium nitrate. After heat activation under vacuum, the functionalized yarns were enriched in barium oxide due to the high surface-to-volume ratio of the nanotubes. The cathodes exhibited good thermionic properties, with a work function as low as 1.73-2.06 eV and thermionic current density that exceeded 185 mA/cm(2) in a field of 850 V/5 mm at 1317 K. The barium-functionalized yarns had high tensile strength of up to 420 MPa and retained strength of similar to 250 MPa after a 2 h activation process. (C) 2008 American Institute of Physics.

Quantum Monte Carlo study of the CO interaction with a dimer model surface for Cr(110)

The chemisorption of CO on a Cr( 110) surface is investigated using the quantum Monte Carlo method in the diffusion Monte Carlo (DMC) variant and a model Cr2CO cluster. The present results are consistent with the earlier ab initio HF study with this model that showed the tilted/ near-parallel orientation as energetically favoured over the perpendicular arrangement. The DMC energy difference between the two orientations is larger (1.9 eV) than that computed in the previous study. The distribution and reorganization of electrons during CO adsorption on the model surface are analysed using the topological electron localization function method that yields electron populations, charge transfer and clear insight on the chemical bonding that occurs with CO adsorption and dissociation on the model surface.

Properties of high k gate dielectric gadolinium oxide deposited on Si(100) by dual ion beam deposition (DIBD)

Gadolinium oxide thin films have been prepared on silicon (100) substrates with a low-energy dual ion-beam epitaxial technique. Substrate temperature was an important factor to affect the crystal structures and textures in an ion energy range of 100-500 eV. The films had a monoclinic Gd2O3 structure with preferred orientation ((4) over bar 02) at low substrate temperatures. When the substrate temperature was increased, the orientation turned to (202), and finally, the cubic structure appeared at the substrate temperature of 700 degreesC, which disagreed with the previous report because of the ion energy. The AES studies found that Gadolinium oxide shared Gd2O3 structures, although there were a lot of oxygen deficiencies in the films, and the XPS results confirmed this. AFM was also used to investigate the surface images of the samples. Finally, the electrical properties were presented. (C) 2004 Elsevier B.V. All rights reserved.

(Ga, Gd, As) film growth on GaAs substrate by low-energy ion-beam deposit

(Ga, Gd, As) film was fabricated by the mass-analyzed dual ion-beam epitaxy system with the energy of 1000 eV at room temperature. There was no new peak found except GaAs substrate peaks (0 0 2) and (0 0 4) by X-ray diffraction. Rocking curves were measured for symmetric (0 0 4) reflections to further yield the lattice mismatch information by employing double-crystal X-ray diffraction. The element distributions vary so much due to the ion dose difference from AES depth profiles. The sample surface morphology indicates oxidizing layer roughness is also relative to the Gd ion dose, which leads to islandlike feature appearing on the high-dose sample. One sample shows ferromagnetic behavior at room temperature. (C) 2003 Elsevier B.V. All rights reserved.

Electric characteristics of pseudo-spark during breakdown phase

An analysis of the time-dependent resistive voltage and power deposition during the breakdown phase of pseudo-spark is presented. The voltage and current were measured by specially designed low-inductance capacitive voltage divider and current measuring resistor. The measured waveforms of voltage and current are digitized and processed by a computer program to remove the inductive component, so as to obtain resistive voltage and power deposition. The influence of pressure, cathode geometry and charging voltage of storage capacitors on the electrical properties in the breakdown phase are investigated. The results suggest that the breakdown phase of pseudo-spark consists of three stages. The first stage is mainly hollow cathode discharge. In the second stage, field-enhanced thermionic emission takes place, resulting in a fast voltage drop and sharp rise of discharge current. The third stage of discharge depends simply on the parameters of the discharge circuit.

A new model for the floating potential of fine particles in plasma

In the plasma processing of ultrafine particles of material, the heat transfer and force are considerably affected by particle charging. In this communication a new model, including thermal electron emission and incorporating the effect of electric field near the particle surface, is developed for metallic spherical particles under the condition of a thin plasma sheath. Based on this model, the particle floating potential, and thus the heat transfer and force, can be detemined more accurately and more realistically than previously.