Shock Tube Studies on the Nonequlibrium Electron Affinity Kinetics of Fluorine Atom at High Temperatures

To study electron affinity kinetics, a shock tube method was applied, in which the test gas was ionized by a reflected shock wave and subsequently quenched by a strong rarefaction wave. As the quenching speed of 106 K/s was reached, a nonequilibrium ionization-recombination process occurred, which was dominated by ion recombination with electrons. A Langmuir electrostatic probe was used to monitor variation in the ion number density at the reflection shock region. The working state of the probe was analyzed...

The effect of Be-doping structure in negative electron affinity GaAs photocathodes on integrated photosensitivity

A new structure of GaAs photocathode was introduced. The Be-doping concentration is variable in the new structure compared with the constant concentration of Be in the normal photocathode. Negative electron affinity GaAs photocathodes were fabricated by alternate input of Cs and O. The spectral response results measured by the on-line spectral response measurement system show that the integrated photosensitivity of the photocathodes with the new structure is enhanced by at least 50% as compared to those with the monolayer structure. Accordingly, two main factors leading to the enhanced photosensitivity of the photocathodes were discussed. (c) 2005 Elsevier B.V. All rights reserved.

High-Integrated-Photosensitivity Negative-Electron-Affinity GaAs Photocathodes with Multilayer Be-Doping Structures

The effect of changing Be doping concentration in GaAs layer on the integrated photosensitivity for nega- tive-electron-affinity GaAs photocathodes is investigated. Two GaAs samples with the monolayer structure and the muhilayer structure are grown by molecular beam epitaxy. The former has a constant Be concentration of 1 × 10^19 cm^-3, while the latter includes four layers with Be doping concentrations of 1 × 10^19, 7 × 10^18, 4 × 10^18, and 1 × 10^18 cm^-3 from the bottom to the surface. Negative-electron-affinity GaAs photocathodes are fabricated by exciting the sample surfaces with alternating input of Cs and O in the high vacuum system. The spectral response results measured by the on-line spectral response measurement system show that the integrated photosensitivity of the photocathode with the muhilayer structure enhanced by at least 50% as compared to that of the monolayer structure. This attributes to the improvement in the crystal quality and the increase in the surface escape probability. Different stress situations are observed on GaAs samples with monolayer structure and muhilayer structure, respectively.

White Electroluminescence from a Phosphonate-Functionalized Single-Polymer System with Electron-Trapping Effect

A novel strategy for obtaining white electroluminescence (EL) is based on the mechanism of electron trapping on host. Phosphonate-functionalized polyfluorene is chosen as host owing to its strong electron affinity. Electrons are confined mostly by host pendants in the EL process, which suppresses charge transfer from host to dopant. White EL with CIE coordinates of (0.34,0.35) is achieved.

Electron affinities and ionization potentials of 4d and 5d transition metal atoms by CCSD(T), MP2 and density functional theory

The electron affinities and ionization potentials of 4d and 5d transition metal atoms were studied by CCSD(T), MP2 and density functional methods. The calculated results indicate that density functional method B3LYP has the best overall performance in predicting both electron affinity and ionization potential. SVWN gives largest IP and EA for 4d and 5d atoms. For the two basis sets used in this study, LANL2DZ and SDD, the performance of B3LYP/SDD combination is better than B3LYP/LANL2DZ, in particular for electron affinity calculation.

Triplex selective 2-(2-naphthyl)quinoline compounds: Origins of affinity and new design principles

A novel competition dialysis assay was used to investigate the structural selectivity of a series of substituted 2-(2-naphthyl)quinoline compounds designed to target triplex DNA. The interaction of 14 compounds with 13 different nucleic acid sequences and structures was studied. A striking selectivity for the triplex structure poly dA:[poly dT](2) was found for the majority of compounds studied. Quantitative analysis of the competition dialysis binding data using newly developed metrics revealed that these compounds are among the most selective triplex-binding agents synthesized to date. A quantitative structure-affinity relationship (QSAR) was derived using triplex binding data for all 14 compounds used in these studies. The QSAR revealed that the primary favorable determinant of triplex binding free energy is the solvent accessible surface area. Triplex binding affinity is negatively correlated with compound electron affinity and the number of hydrogen bond donors. The QSAR provides guidelines for the design of improved triplex-binding agents.

Stability and photoemission characteristics for GaAs photocathodes in a demountable vacuum system

The stability and photoemission characteristics for reflection-mode GaAs photocathodes in a demountable vacuum system have been investigated by using spectral response and x-ray photoelectron spectroscopy measurements at room temperature. We find that the shape of the spectral response curve for the cathode changes with time in the vacuum system, but after applying fresh cesium to the degraded cathode, the spectral response can almost be restored. The change and restoration of curve shape are mainly attributed to the evolution of the surface barrier. We illustrate the evolution and analyze the influence of the barrier on the spectral response of the cathode. (C) 2008 American Institute of Physics.

The field emission properties of nonpolar a-plane n-type GaN films grown on nano-patterned sapphire substrates

Si-doped nonpolar a-plane GaN films were grown on nanopatterned sapphire substrates by a low-pressure metal organic chemical vapor deposition (MOCVD) system. The structure, morphology and field emission properties of the sample were studied by means of high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), and field emission measurement. The XRD analysis shows that the sample is a nonpolar a-plane (11 (2) over bar0) GaN film. The field emission measurement shows that the nonpolar GaN films exhibit excellent field emission properties with a threshold emission field of as low as 10 V/mu m at a current density of 0.63 mu A/cm(2), and a high field emission current density of 74 mA/cm(2) at an applied field of 24 V/mu m. Moreover, the Fowler-Nordheirn plot of the sample fits a near linear relation. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Comparison between gradient-doping GaAs photocathode and uniform-doping GaAs photocathode

We compared two reflection-mode negative electron affinity (NEA) GaAs photocathode samples that are grown by molecular beam epitaxy with p-type beryllium doping. One sample is uniform doping, and another is gradient doping. Experimental curves of spectral response sensitivity and quantum efficiency are obtained. The thicknesses of the two cathodes are both 2.6 mu m. The integrated sensitivity of the uniform doping one is 1966 mu A/lm, and that of the gradient-doping one is 2421 mu A/lm. The escape probability and diffusion length are fitted from the spectral response curves. For the uniform-doping sample, the escape probability is 0.45 and the diffusion length is 5 mu m. For the gradient-doping sample, the escape probability is 0.55 and the diffusion length is 5.5 mu m. (c) 2007 Optical Society of America.

Photovoltaic and electroluminescence characters in hybrid ZnO and conjugated polymer bulk heterojunction devices

We report electroluminescence in hybrid ZnO and conjugated polymer poly[2-methoxy-5-(3', 7'-dimethyloctyloxy)-1,4-phenylenevinylene] (MDMO-PPV) bulk heterojuriction photovoltaic cells. Photolummescence quenching experimental results indicate that the ultra,fast photoinduced electron transfer occurs from MDMO-PPV to ZnO under illumination. The ultrafast photoinduced electron transfer effect is induced because ZnO has an electron affinity about 1.2 eV greater than that of MDMO-PPV. Electron 'back transfer' can occur if the interfacial barrier between ZnO and MDMO-PPV can be overcome by applying a substantial electric field. Therefore, electroluminescence action due to the fact that the back transfer effect can be observed in the ZnO:MDMO-PPV devices since a forward bias is applied. The photovoltaic and electroluminescence actions in the same ZnO:MDMO-PPV device can be induced by different injection ways: photoinjection and electrical injection. The devices are expected to provide an opportunity for dual functionality devices with photovoltaic effect and electroluminescence character.

Structural properties and Raman measurement of AlN films grown on Si (111) by NH3-GSMBE

Epitaxial growth of AlN has been performed by molecular beam epitaxy (MBE) with ammonia. The structural properties of materials were studied by cross-sectional transmission electron microscopy (TEM), X-ray diffraction (XRD), and atomic force microscopy (AFM). XRD and TEM diffraction pattern confirm the AlN is single crystalline 2H-polytype with the epitaxial relationship of (0001)AlNparallel to(111)Si, [11 (2) over bar0](AlN)parallel to[110](Si), [10 (1) over bar0](AlN)parallel to[11 (2) over bar](Si). Micro-Raman scattering measurement shows that the E-2 (high) and A(1) (LO) phonon mode shift 9 cm(-1) toward the low frequency, which shows the existence of large tensile strain in the AlN films. Furthermore, the appearance of forbidden A, (TO) mode and its anomalous shift toward high frequency was found and explained. (C) 2002 Elsevier Science B.V. All rights reserved.

Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy

X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the w-InN/h-BN heterojunction. We find that it is a type-II heterojunction with the VBO being -0.30 +/- A 0.09 eV and the corresponding conduction band offset (CBO) being 4.99 +/- A 0.09 eV. The accurate determination of VBO and CBO is important for designing the w-InN/h-BN-based electronic devices.

Simple and Efficient Near-Infrared Organic Chromophores for Light-Emitting Diodes with Single Electroluminescent Emission above 1000 nm

A series of NIR organic chromophores with donor-pi-acceptor-pi-donor structure are synthesized. Good thermal stability and strong photoluminescence in solid state render them suitable for application in light-emitting diodes. Exclusive near-infrared emission at 1080 nm with external quantum efficiency of 0.28% is obtained from the nondoped OLEDs. The longest electroluminescence wave-length is 1220 nm.

Electronic structures of 4d transition metal monoxides by density functional theory

Bond distances, dissociation energies, ionization potentials and electron affinities of 4d transition metal monoxides from YO to CdO and their positive and negative ions were studied by use of density functional methods B3LYP, BLYP, B3PW91, BPW91, B3P86, BP86, SVWN, MPW1PW91 and PBE1PBE. It was found that calculated properties are highly dependent on the functionals employed, especially for dissociation energy. For most neutral species, pure density functionals BLYP, BPW91 and BP86 have good performance in predicting dissociation energy than hybrid density functionals B3LYP, B3PW91 and B3P86. In addition, BLYP gives the largest bond distance compared with other density functional methods, while SVWN gives shortest bond distance, largest dissociation energy and electron affinity. For the ground state, the spin multiplicity of the charged species can be obtained by +/- 1 of their corresponding neutral species.

Green light-emitting polyfluorenes with improved color purity incorporated with 4,7-diphenyl-2,1,3-benzothiadiazole moieties

By incorporating 4,7-diphenyl- 2,1,3 benzothiadiazole instead of 2,1,3-benzothiadiazole into the backbone of polyfluorene, we developed a novel series of green light- emitting polymers with much improved color purity. Compared with the state-of-the-art green light-emitting polymer, poly(fluorene-co-benzothiadiazole) (lambda max = 537 nm), the resulting polymers (lambda(max) = 521 nm) showed 10-20 nm blueshifted electroluminescence (EL) spectra and greatly improved color purity because the insertion of two phenylene units between the 2,1,3-benzothiadiazole unit and the fluorene unit reduced the effective conjugation length in the vicinity of the 2,1,3-benzothiadiazole unit. As a result, the resulting polymers emitted pure green light with CIE coordinates of (0.29, 0.63), which are very close to (0.26, 0.65) of standard green emission demanded by the National Television System Committee (NTSC). Moreover, the insertion of the phenylene unit did not affect the photoluminescence (PL) and EL efficiencies of the resulting polymers. PL quantum efficiency in solid films up to 0.82 was demonstrated. Single-layer devices (ITO/PEDOT/ polymer/Ca/Al) of these polymers exhibited a turn-on voltage of 4.2 V, luminous efficiency of 5.96 cd A(-1) and power efficiency of 2.21 lm W-1. High EL efficiencies and good color purities made these polymers very promising for display applications.