27 resultados para Downconversion mixer

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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An efficient near-infrared (NIR) quantum cutting (QC) in GdAl3(BO3)(4):RE3+,Yb3+ (RE=Pr, Tb, and Tm) phosphors has been demonstrated, which involves the conversion of the visible photon into the NIR emission with an optimal quantum efficiency approaching 200%, by exploring the cooperative downconversion mechanism from RE3+ (RE=Pr, Tb, and Tm) excitons to the two activator ions, Yb3+. The development of NIR QC phosphors could open up a new approach in achieving high efficiency silicon-based solar cells by means of downconversion in the visible part of the solar spectrum to similar to 1000 nm photons with a twofold increase in the photon number. (c) 2007 American Institute of Physics.

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We report on cooperative downconversion in Yb3+-RE3+ (RE = Tm or Pr) codoped lanthanum borogermanate glasses (LBG), which are capable of splitting a visible photon absorbed by Tm3+ or Pr3+ ions into two near-infrared photons. The results indicate that Pr3+-Yb3+ is a more efficient ion couple than Tm3+-Yb3+ in terms of cooperative downconversion. We have obtained a highest quantum yield of 165% and 138% for Pr3+-Yb3+ and Tm3+-Yb3+ codoped LBG glasses under 468 nm excitation, respectively. However, ultraviolet light excitation to the charge transfer band of Yb3+ does not result in quantum splitting as rapid relaxation from the charge transfer band to 4f(13) levels of Yb3+ dominates. (C) 2008 Optical Society of America

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This paper presents a 5GHz double-balanced mixer with DC-offset cancellation circuit for direct-conversion receiver compliant with IEEE 802.11a wireless LAN standard. The analog feedback loop is used, to eliminate the DC-offset at the output of the double-balanced mixer. The test results show that the mixer with DC-offset cancellation circuit has voltage conversion gain of 9.5dB at 5.15GHz, noise figure of 13.5dB, IIP3 of 7.6 dBm, 1.73mV DC-offset voltage and 67mW power with 3.3-V power supply. The DC-offset cancellation circuit has less than 0.1mm(2) additional area and 0.3mW added power dissipation. The direct conversion WLAN receiver has been implemented in a 0.35 mu m SiGe BiCMOS technology.

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A DC-offset cancellation scheme in the 5GHz direct-conversion receiver compliant with IEEE 802.11a wireless LAN standard is described in this paper. It uses the analog feedback loop to eliminate the DC-offset at the output of the double-balanced mixer. The mixer has a simulation voltage conversion gain of IMB at 5.2GHz, noise figure of 9.67dB, IIP3 of 7.6dBm. The solution provides 39.1dB reduction according to the leakage value at LO and mixer load resistors, the additional noise figure added to mixer is less than 0.9dB, the added power dissipation is 0.1mW and was fabricated in 60GHz 0.35 mu m SiGe BiCMOS technology.

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We analyze a wide-band,high-linearity down-conversion mixer for cable receptions that is implemented in 0. 35μm SiGe BiCMOS technology. The bandwidth of the RF (radio frequency) input covers the range from 1 to 1.8GHz. The measured input power at the - 1dB compression point of the mixer reaches + 14.23dBm. The highest voltage conversion gain is 8. 31dB, while the lowest noise figure is 19.4dB. The power consumed is 54mW with a 5V supply. The test result of the down-conversion mixer is outlined.

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Excimer laser ablation technique was introduced into this work to fabricate a passive planar micromixer on the PMMA substrate. T-junction shaped and width-changed S-shaped microchannels were both designed in this micromixer to enhance mixing effect. The mixing experiment of distilled water and Rhodamine B with injection flow rate of 500 and 1,500 mu m/s validates the mixing effectivity of this micromixer, and indicates the feasibility of excimer laser ablation in the microfabrication of mu-TAS device.

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Fluorescence spectra of Nd: YVO4 under excitation of a continuous wave (CW) diode laser and a femtosecond laser at 800nm were investigated. It was found that Nd: YVO4 shows different upconversion and downconversion luminescencent behaviors when excited by the diode laser and the femtosecond laser. The dependence of the upconversion luminescence intensity on the pump power of the femtosecond laser was discussed. The populations of the upper energy levels for upconversion and downconversion luminescence were calculated based on the Bloch equations. The calculations agree well with the experimental results. (c) 2007 Optical Society of America.

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Three-terminal ballistic junctions (TBJs) are fabricated from a high-mobility InP/In0.75Ga0.25As heterostructure by electron-beam lithography. The voltage output from the central branch is measured as a function of the voltages applied to the left and right branches of the TBJs. The measurements show that the TBJs possess an intrinsic nonlinearity. Based on this nonlinearity, a novel room-temperature functional frequency mixer and phase detector are realized. The TBJ frequency mixer and phase detector are expected to have advantages over traditional circuits in terms of simple structure, small size and high speed, and can be used as a new type of building block in nanoelectronics.

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In this paper, a wide-band low noise amplifier, two mixers and a VCO with its buffers implemented in 50GHz 0.35 mu m SiGe BiCMOS technology for dual-conversion digital TV tuner front-end is presented. The LNA and up-converting mixer utilizes current injection technology to achieve high linearity. Without using inductors, the LNA achieves 0.1-1GHz wide bandwidth and 18.8-dB gain with less than 1.4-dB gain variation. The noise figure of the LNA is less than 5dB and its 1dB compression point is -2 dBm. The IIP3 of two mixers is 25-dBm. The measurement results show that the VCO has -127.27-dBc/Hz phase noise at 1-MHz offset and a linear gain of 32.4-MHz/V between 990-MHz and 1.14-GHz. The whole chip consume 253mW power with 5-V supply.

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The wideband high-linearity mixers for a double conversion cable TV tuner is presented. The up-conversion mixer converts the input signal from 100MHz to 1000 MHz to the intermediate frequency (IF) of I GHz above. And the down-conversion mixer converts the frequency back. The degeneration resistors are used to Improve the linearity. The tuner is implemented in a 0.35 mu m SiGe technology. Input power at 1dB compression point can reach +14.23dBm. The lowest noise figure is 17.5dB. The two mixers consume 103mW under a supply voltage of 5 V.

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This letter presents the effective design of a tunable 80 Gbit/s wavelength converter with a simple configuration consisting of a single semiconductor optical amplifier (SOA) and an optical bandpass filter (OBPF). Based on both cross-gain and cross-phase modulation in SOA, the polarity-preserved, ultrafast wavelength conversion is achieved by appropriately filtering the blue-chirped spectral component of a probe light. Moreover, the experiments are carried out to investigate into the wavelength tunability and the maximum tuning range of the designed wavelength converter. Our results show that a wide wavelength conversion range of nearly 35 nm is achieved with 21-nm downconversion and 14-nm upconversion, which is substantially limited by the operation wavelength ranges of a tunable OBPF and a tunable continuous-wave laser in our experiment. We also exploited the dynamics characteristics of the wavelength converter with variable input powers and different injection current of SOA. (C) 2008 Wiley Periodicals, Inc.