Carbon transition efficiency and process cost in high-rate, large-area deposition of diamond films by DC arc plasma jet

A new DC plasma torch in which are jet states and deposition parameters can be regulated over a wide range has been built. It showed advantages in producing stable plasma conditions at a small gas flow rate. Plasma jets with and without magnetically rotated arcs could be generated. With straight are jet deposition, diamond films could be formed at a rate of 39 mu m/h on Mo substrates of Phi 25 mm, and the conversion rate of carbon in CH4 to diamond was less than 3%. Under magnetically rotated conditions, diamond films could be deposited uniformly in a range of Phi 40 mm at 30 mu m/h, with a quite low total gas flow rate and high carbon conversion rate of over 11%. Mechanisms of rapid and uniform deposition of diamond films with low gas consumption and high carbon transition efficiency are discussed.

Deposition of ZnO thin films on (100) γ-LiAlO2 substrate

Optical properties for ZnO thin films grown on (100) γ-LiAlO2 (LAO) substrate by pulsed laser deposition method were investigated. The c-axis oriented ZnO films were grown on (100) γ-LiAlO2 substrates at the substrate temperature of 550 Celsius degrees. The transmittance of the films was over 85%. Peaks attributed to excitons were shown in absorption spectra, which indicated that thin films had high crystallinity. Photoluminescence spectra with the maximum peak at 540 nm were observed at room temperature, which seemed to be ascribed to oxygen vacancy in the ZnO films caused by diffusion of Li from the substrates into the films during the deposition.

High rate deposition of microcrystalline silicon films by high-pressure radio frequency plasma enhanced chemical vapor deposition (PECVD)

Hydrogenated microcrystalline silicon (mu c-Si:H) thin films were prepared by high-pressure radio-frequency (13.56 MHz) plasma enhanced chemical vapor deposition (rf-PECVD) with a screened plasma. The deposition rate and crystallinity varying with the deposition pressure, rf power, hydrogen dilution ratio and electrodes distance were systematically studied. By optimizing the deposition parameters the device quality mu c-Si:H films have been achieved with a high deposition rate of 7.8 angstrom/s at a high pressure. The V-oc of 560 mV and the FF of 0.70 have been achieved for a single-junction mu c-Si:H p-i-n solar cell at a deposition rate of 7.8 angstrom/s.

Chemical liquid phase deposition of thin aluminum oxide films

Thin aluminum oxide films were deposited by a new and simple physicochemical method called chemical liquid phase deposition (CLD) on semiconductor materials. Aluminum sulfate with crystallized water and sodium bicarbonate were used as precursors for film growth, and the control of the system's pH value played an important role in this experiment. The growth rate is 12 nm/h with the deposition at [Al-2(SO4)(3)]=0.0837 mol.L-1, [NaHCO3]=0.214 mol.L-1, 15 degreesC. Post-growth annealing not only densifies and purifies the films, but results in film crystallization as well. Excellent quality of Al2O3 films in this work is supported by electron dispersion spectroscopy, Fourier transform infrared spectrum, X-ray diffraction spectrum and scanning electron microscopy photograph.

Deposition of p-type nc-SiC : H thin films with subtle carbon incorporation for applications in p-i-n solar cells

This paper presents a detailed study on the effects of carbon incorporation and substrate temperature on structural, optical, and electrical properties of p-type nanocrystalline amorphous silicon films. A p-nc-SiC: H thin film with optical gap of 1.92 eV and activation energy of 0.06 eV is obtained through optimizing the plasma parameters. By using this p-type window layer, single junction diphasic nc-SiC : H/a-Si : H solar cells have been successfully prepared with a V-oc of 0.94 eV.

Study on pulsed laser ablation and deposition of ZnO thin films by L-MBE

ZnO, as a wide-band gap semiconductor, has recently become a new research focus in the field of ultraviolet optoelectronic semiconductors. Laser molecular beam epitaxy (L-MBE) is quite useful for the unit cell layer-by-layer epitaxial growth of zinc oxide thin films from the sintered ceramic target. The ZnO ceramic target with high purity was ablated by KrF laser pulses in an ultra high vacuum to deposit ZnO thin film during the process of L-MBE. It is found that the deposition rate of ZnO thin film by L-MBE is much lower than that by conventional pulsed laser deposition (PLD). Based on the experimental phenomena in the ZnO thin film growth process and the thermal-controlling mechanism of the nanosecond (ns) pulsed laser ablation of ZnO ceramic target, the suggested effective ablating time during the pulse duration can explain the very low deposition rate of the ZnO film by L-MBE. The unique dynamic mechanism for growing ZnO thin film is analyzed. Both the high energy of the deposition species and the low growth rate of the film are really beneficial for the L-MBE growth of the ZnO thin film with high crystallinity at low temperature.

DIRECT ION-BEAM DEPOSITION OF CARBON-FILMS ON SILICON IN THE ION ENERGY-RANGE OF 15-500 EV

Direct ion beam deposition of carbon films on silicon in the ion energy range of 15-500 eV and temperature range of 25-800-degrees-C has been studied. The work was carried out using mass-separated C+ and CH3+ ions under ultrahigh vacuum. The films were characterized with x-ray photoelectron spectroscopy, Raman spectroscopy, transmission electron microscopy, and transmission electron diffraction analysis. In the initial stage of the deposition, carbon implanted into silicon induced the formation of silicon carbide, even at room temperature. Further carbon ion bombardment then led to the formation of a carbon film. The film properties were sensitive to the deposition temperature but not to the ion energy. Films deposited at room temperature consisted mainly of amorphous carbon. Deposition at a higher temperature, or post-deposition annealing, led to the formation of microcrystalline graphite. A deposition temperature above 800-degrees-C favored the formation of microcrystalline graphite with a preferred orientation in the (0001) direction. No evidence of diamond formation in these films was observed.

A fixed arc length direct current plasma torch for reduced pressure deposition of thin films

Because of its high energy density direct current(dc)thermal plasmas are widely accepted as a processing medium which facilitates high processing rates high fluxes of radical species the potential for smaller jnstallations a wide choice of reactants and high quench rates[1].A broad range of industrial processing methods have been developed based on dc plasma technology. However,nonstationary features limited new applications of dc plasma in advanced processing, where reliability£¬reproducibility and precise controllability are required£. These challenges call for better understanding of the arc and jet behavior over a wide range of generating parameters and a comprehensive control of every aspect of lhe plasma processing.

Sol-gel deposition of calcium silicate red-emitting luminescent films doped with Eu3+

Eu3+-activated calcium silicate (CaO-SiO2:Eu3+) luminescent films were prepared by the sol-gel method. The structural evolution of the film was studied by X-ray powder diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM), and the luminescence properties of the phosphor films were investigated as a function of heat treatment temperature. The XRD study indicates that a kilchoanite phase forms in the film sintered at 800 degreesC, which is different from that in gel powder treated under the same conditions. The SEM results show that the film thickness decreases and the particles in the film become smaller with increasing heat treatment temperature. The CaO-SiO2:Eu film shows the characteristic emission of Eu3+ under UV excitation, with the Eu3+ D-5(0)-->F-7(2) band (616 nm) being the most prominent. A large difference in the Eu3+ lifetime is observed between the film samples treated at 500 and 700 degreesC (or above). Concentration quenching occurs when the Eu3+ doping concentration is above 6 mol% of Ca2+ in the film.

Surface plasmon resonance and electrochemistry for detection of small molecules using catalyzed deposition of metal ions on gold substrate

Small molecules are difficult to detect by conventional surface plasmon resonance (SPR) spectroscopy due to the fact that the changes in the refractive index resulted from the binding process of small biomolecules are quite small. Here, we report a simple and effective method to detect small biomolecule using SPR spectroscopy and electrochemistry by catalyzed deposition of metal ions on SPR gold film. As an example, the ascorbic acid-mediated deposition of Ag on gold film was monitored by in situ SPR spectrum. The deposition of Ag atom on gold film resulted in an obvious decrease of depth in SPR angular scan curves of reflectance intensity and minimum reflectivity angle. The depth change of the SPR reflectance intensity and minimum reflectivity angle curves mainly relied on the amount of Ag atom deposited on gold film that can be controlled by the concentration of ascorbic acid. By monitoring the deposition of Ag atom on gold film, ascorbic acid was detected in the concentration range of 2 x 10(-5) M to 1 x 10(-3) M. After each of detections, the SPR sensor surface was completely regenerated by a potential step that stripped off the Ag atom. Furthermore, the regeneration process of the sensor surface provides the feasibility for detecting the concentration of ascorbic acid by electrochemical method.

Thermophoretic deposition of particles onto cold surfaces of bodies in two-dimensional and axisymmetric flows

The problem of thermophoretic deposition of small particles onto cold surfaces is studied in two-dimensional and axisymmetric flow fields. The particle concentration equation is solved numerically together with the momentum and energy equations in the laminar boundary layer with variable density effect included. It is shown explicitly to what extent the particle concentration and deposition rate at the wall are influenced by the density variation effect for external flow past bodies. The general numerical procedure is given for two-dimensional and axisymmetric cases and is illustrated with examples of thermophoretic deposition of particles in flows past a cold cylinder and a sphere.

Thermophoretic deposition of particles in gas flowing over cold surfaces

Some of the calculated parameters show a maximum value for specimens heat-treated at about 100°C. The tensile strength is, for instance, substantially higher for specimens shock-heated at 100°C than for non-heated ones. Another striking feature is the initial decrease of the diameter observed in specimens heat-treated at 600°C when loaded in uniaxial compression. Both optical microscopy and DSA experiments reveal a large increase in microcracking when the heat-treatment temperature exceeds 300°C.

The propagation and deposition of fast muons in dense DT mixture

The propagation of the fast muon population mainly due to collisional effect in a dense deuterium-tritium (DT for short) mixture is investigated and analysed within the framework of the relativistic Fokker-Planck equation. Without the approximation that the muons propagate straightly in the DT mixture, the muon penetration length, the straggling length, and the mean transverse dispersion radius are calculated for different initial energies, and especially for different densities of the densely compressed DT mixture in our suggested muon-driven fast ignition (FI). Unlike laser-driven FI requiring super-high temperature, muons can catalyze DT fusion at lower temperatures and may generate an ignition sparkle before the self-heating fusion follows. Our calculation is important for the feasibility and the experimental study of muon-driven FI.