Some Key Technics of Drop Tower Experiment Device of National Microgravity Laboratory (China) (NMLC)

Drop tower is an important ground based facility for microgravity science experiment. The technical performances of the drop tower NMLC are advanced compared with similar facilities in the US, Germany and Japan. The main components such as drop capsule, deceleration devices, release mechanism present its advantages and creativities.

A Nanomechanical Device Based on Light-Driven Proton Pumps

In this paper, a hybrid device based on a microcantilever interfaced with bacteriorhodopsin (bR) is constructed. The microcantilever, on which the highly oriented bR film is self-assembled, undergoes controllable and reversible bending when the light-driven proton pump protein, bR, on the microcantilever surface is activated by visible light. Several control experiments are carried out to preclude the influence of heat and photothermal effects. It is shown that the nanomechanical motion is induced by the resulting gradient of protons, which are transported from the KCl solution on the cytoplasmic side of the bR film towards the extracellular side of the bR film. Along with a simple physical interpretation, the microfabricated cantilever interfaced with the organized molecular film of bR can simulate the natural machinery in converting solar energy to mechanical energy.

A Dynamic Loading Device for Suction Foundations in Centrifuge Modeling

Suction bucket foundations are widely used in the offshore platform for the exploitation of the offshore petroleum and natural gas resources. During winter seasons, ice sheets formed in Bohai Bay will impose strong impact and result in strong vibration on the platform. This paper describes a dynamic loading device developed on the geotechnical centrifuge and its application in modeling suction bucket foundation under the equivalent ice-induced vibration loadings. Some experimental results are presented. It is shown that when the loading amplitude is over a critical value, the sand at the upper part around the bucket softens or even liquefies. The excess pore pressure decreases from the upper part to the lower part of the sand foundation in vertical direction while decreases from near to far away from the bucket's side wall in the horizontal direction. Large settlements of the bucket and the sand around the bucket occur under the horizontal dynamic loading. The dynamic responses of the bucket with smaller size are heavier.

Space experimental device on Marangoni drop migrations of large Reynolds numbers

The space experimental device for testing the Marangoni drop migrations has been discussed in the present paper. The experiment is one of the spaceship projects of China. In comparison with similar devices, it has the ability of completing all the scientific experiments by both auto controlling and telescience methods. It not only can perform drop migration experiments of large Reynolds numbers but also has an equi-thick interferential system.

A Novel Counter Sheet-Flow Sandwich Cell Culture Device For Mammalian Cell Growth In Space

Cell culture and growth in space is crucial to understand the cellular responses under microgravity. The effects of microgravity were coupled with such environment restrictions as medium perfusion, in which the underlying mechanism has been poorly understood. In the present work, a customer-made counter sheet-flow sandwich cell culture device was developed upon a biomechanical concept from fish gill breathing. The sandwich culture unit consists of two side chambers where the medium flow is counter-directional, a central chamber where the cells are cultured, and two porous polycarbonate membranes between side and central chambers. Flow dynamics analysis revealed the symmetrical velocity profile and uniform low shear rate distribution of flowing medium inside the central culture chamber, which promotes sufficient mass transport and nutrient supply for mammalian cell growth. An on-orbit experiment performed on a recovery satellite was used to validate the availability of the device.

The design of a controllable imaging device with the cold atomic medium

Under the circumstance of a Gaussian control field, the cold atomic medium with electromagnetically induced transparency (EIT) turns out to be the special medium with the quadratic index distribution which is controllable online. In our study, the optical system occupies a portion of the EIT medium which acts as an imaging device. With the help of the Collins formula, the analytic expression for the spatial distribution of the probe field in the cold atomic medium is obtained as well as the location of the imaging. The methods for improving the visibility of the imaging are proposed in this paper. Moreover, we also show that the shapes of the images on the output are strongly influenced by the intensity of the control field, which provides a potential optical processing method.

Compact parallel optical modified-signed-digit arithmetic-logic array processor with electron-trapping device

A compact two-step modified-signed-digit arithmetic-logic array processor is proposed. When the reference digits are programmed, both addition and subtraction can be performed by the same binary logic operations regardless of the sign of the input digits. The optical implementation and experimental demonstration with an electron-trapping device are shown. Each digit is encoded by a single pixel, and no polarization is included. Any combinational logic can be easily performed without optoelectronic and electro-optic conversions of the intermediate results. The system is compact, general purpose, simple to align, and has a high signal-to-noise ratio. (C) 1999 Optical Society of America.

THE RESPONSES OF Microcystis TO SEDIMENT ENVIRONMENTS AND THE ASSESSMENT FOR ITS OVERWINTERING - A SIMULATION STUDY IN A NOVEL DEVICE

A novel multi-cell device made of organic glass was designed to study morphological and physiological characteristics of Microcystis population trapped in simulated sediment conditions. Changes of colonial morphology and antioxidant activities of the population were observed and measured over the range of 31-day incubation. During the incubation, the antioxidant enzyme activities fluctuated significantly in sediment environments. The activities of catalase (CAT), glutathione peroxidase (GPx) and malondialdehyde (NIDA) reached the highest on the 11(th) day, 6(th) day and 6(th) day. respectively, and then dropped down remarkably in the following days. The ratios of Fv/Fm and the maximal electron transfer rate (ETRm) declined during the initial days (1 similar to 11(th) day), but rebounded on the 16(th) day, which were consistent with the variations of total protein. In the end of incubation. gas vacuoles were hard]), observed and the gelatinous sheath was partly disappeared in the population of Microcystis. Nevertheless, the remaining populations. upon transferred to culture medium, were able to grow though experiencing a longer lag phase of nine days. The results indicated that the sediment environments were able to cause negative effects on M. aeruginosa cells. The cells, however, responded to against the possible damage afterwards. It is thus proposed the acute responses in the population during the early stage of sedimentation could be of importance in aiding the long-term survivor of Microcystis and recruitment in lake sediments. The present study also demonstrated the utility of the device in simulating the sediment environments for further investigation.

A Low-Voltage Silicon Light Emitting Device in Standard Salicide CMOS Technology

National Natural Science Foundation of China 60536030 60776024 60877035 90820002 National High-Technology Research and Development Program of China 2007AA04Z329 2007AA04Z254

Scanning electron microscopy observation of in-device InAs/AlAs quantum dots by selective etching of capping layers

Self-assembled InAs/AlAs quantum dots embedded in a resonant tunneling diode device structure are grown by molecular beam epitaxy. Through the selective etching in a C6H8O7 center dot H2O-K3C6H5O7 center dot H2O-H2O2 buffer solution, 310 nm GaAs capping layers are removed and the InAs/AlAs quantum dots are observed by field-emission scanning electron microscopy. It is shown that as-fabricated quantum dots have a diameter of several tens of nanometers and a density of 10(10) cm(-2) order. The images taken by this means are comparable or slightly better than those of transmission electron microscopy. The undercut of the InAs/AlAs layer near the edges of mesas is detected and that verifies the reliability of the quantum dot images. The inhomogeneous oxidation of the upper AlAs barrier in H2O2 is also observed. By comparing the morphologies of the mesa edge adjacent regions and the rest areas of the sample, it is concluded that the physicochemical reaction introduced in this letter is diffusion limited.

An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application

Optimized AlGaN/AlN/GaN high electron mobility transistor (HEMT) with high mobility GaN channel layer structures were grown on 2-in. diameter semi-insulating 6H-SiC substrates by MOCVD. The 2-in. diameter GaN HEMT wafer exhibited a low average sheet resistance of 261.9 Omega/square, with the resistance un-uniformity as low as 2.23%. Atomic force microscopy measurements revealed a smooth AlGaN surface whose root-mean-square roughness is 0.281 nm for a scan area of 5 x 5 mu m. For the single-cell HEMTs device of 2.5-mm gate width fabricated using the materials, a maximum drain current density of 1.31 A/mm, an extrinsic transconductance of 450 mS/mm, a current gain cutoff frequency of 24 GHz and a maximum frequency of oscillation 54 GHz were achieved. The four-cell internally-matched GaN HEMTs device with 10-mm total gate width demonstrated a very high output power of 45.2 W at 8 GHz under the condition of continuous-wave (CW), with a power added efficiency of 32.0% and power gain of 6.2 dB. To our best knowledge, the achieved output power of internally-matched devices are the state-of-the-art result ever reported for X-band GaN-based HEMTs. Crown Copyright (C) 2009 Published by Elsevier Ltd. All rights reserved.

Stable multiplication gain in GaN p-i-n avalanche photodiodes with large device area

Visible-blind p-i-n avalanche photodiodes (APDs) were fabricated with high-quality GaN epilayers deposited on c-plane sapphire substrates by metal-organic chemical vapour deposition. Due to low dislocation density and a sophisticated device fabrication process, the dark current was as small as similar to 0.05 nA under reverse bias up to 20V for devices with a large diameter of 200 mu m, which was among the largest device area for GaN-based p-i-n APDs yet reported. When the reverse bias exceeded 38V the dark current increased sharply, exhibiting a bulk avalanche field-dominated stable breakdown without microplasma formation or sidewall breakdown. With ultraviolet illumination (360 nm) an avalanche multiplication gain of 57 was achieved.

Study on the internal reflection of the multimode-interference-type device

The internal reflection of the multimode-interference (MMI)-type device is calculated with the bidirectional beam propagation method. The calculated results indicate that the difference of the effective refractive indices between the core region and the surrounding region has a determining effect on the internal reflection of the MMI-type device. The output taper for the MMI-type combiner and splitter has a more evident effect on the internal reflection than the input taper. The internal reflection decreases with increasing the end width of the taper. For the MMI-type device with appropriate tapers, the internal reflection does not show evident degradation with the deviation of the length of the MMI region from its optimal value. (C) 2004 Society of Photo-Optical Instrumentation Engineers.

MOVPE growth of grade-strained bulk InGaAs/InP for broad-band optoelectronic device applications

In this paper we present a novel growth of grade-strained bulk InGaAs/InP by linearly changing group-III TMGa source flow during low-pressure metalorganic vapor-phase epitaxy (LP-MOVPE). The high-resolution X-ray diffraction (HRXRD) measurements showed that much different strain was simultaneously introduced into the fabricated bulk InGaAs/InP by utilizing this novel growth method. We experimentally demonstrated the utility and simplicity of the growth method by fabricating common laser diodes. As a first step, under the injection current of 100 mA, a more flat gain curve which has a spectral full-width at half-maximum (FWHM) of about 120 nm was achieved by using the presented growth technique. Our experimental results show that the simple and new growth method is very suitable for fabricating broad-band semiconductor optoelectronic devices. (C) 2003 Elsevier B.V. All rights reserved.

Device for charge- and spin-pumped current generation with temperature-induced enhancement

We have proposed a device, a superconducting-lead/quantum-dot/normal-lead system with an ac voltage applied on the gate of the quantum dot induced by a microwave, based on the one-parameter pump mechanism. It can generate a pure charge- or spin-pumped current. The direction of the charge current can be reversed by pushing the levels across the Fermi energy. A spin current arises when a magnetic field is applied on the quantum dot to split the two degenerate levels, and it can be reversed by reversing the applied magnetic field. The increase of temperature enhances these currents in certain parameter intervals and decreases them in other intervals. We can explain this interesting phenomenon in terms of the shrinkage of the superconducting gap and the concepts of photon-sideband and photon-assisted processes.