45 resultados para Cr^4
em Chinese Academy of Sciences Institutional Repositories Grid Portal
Resumo:
NdYAG808nmNdYAGQ90Cr^4YAGQ119mW465mW1064nm16ns1818kHz34J61mWQ
Resumo:
LDNdYLFCr^4YAGQ1053nm05mm90Cr^4 YAG17W606ns15W95kHz1579mJ055mm95Cr^4 YAG17W686ns135W14kHz
Resumo:
(Cr^4+Nd^3+GGG)QCrCr^4+GGGNd^3+GGG(Cr^4+Nd^3+)GGG(Cr^4+Nd^3+)GGGNd^3+GGG33s250s(Cr^4+Nd^3+)GGGQ
Resumo:
(Cr^4+Nd^3+:GGG)CrNdJuddofeltt(t=246)McCumber^4F3/2^4I11/2Cr^3+300900nmCr^3+Nd^3+Cr^4+106m
Resumo:
CrAl2O3Al2O3Cr^3Mg^2Cr^4Cr^41223nmCr^437nm
Resumo:
X,(SESAM),KerrCr4+YAG.80 fs,120 MHz,100 W.
Resumo:
YbYAGYb^3YbYbYAGXYb^3CrYbYAGCr^4
Resumo:
Organic thin-film transistors (OTFTs) using high dielectric constant material tantalum pentoxide (Ta2O5) and benzocyclobutenone (BCBO) derivatives as double-layer insulator were fabricated. Three metals with different work function, including Al (4.3 eV), Cr (4.5 eV) and Au (5.1 eV), were employed as gate electrodes to study the correlation between work function of gate metals and hysteresis characteristics of OTFTs. The devices with low work function metal Al or Cr as gate electrode exhibited high hysteresis (about 2.5 V threshold voltage shift). However, low hysteresis (about 0.7 V threshold voltage shift) OTFTs were attained based on high work function metal Au as gate electrode.
Resumo:
88000 t80% 1. 18.2%6.9-32.1%3.7-9.6 t9.8%6.6-14.5%1.3-2.7 t 2. 7-40000 ng•m-315000 ng•m-3120 ng•m-324 ng•m-343-2100 ng•L-10.30-1.1 ng•L-192-2300 ng•L-12.6-7.9 ng•L-11.3-360 mg•kg-10.18-47.5 mg•kg-1pH 3. 1060 g•g-1 Cr347 g•g-1 Cr917 g•g-1 Cr-50 g•g-1 Cr40.0 g•g-1 Cr66.2 g•g-1 Cr56.9 g•g-1 Cr1.30 g•g-1 Cr2.5 g•g-1 Cr 4. 37.31.92.3 g•g-12.81.31.5 g•g-1358.521.333.1 ng•g-114.65.74.0 ng•g-1397.5%94.1%93.5% (r=0.65, p<0.01) 5. 5.05 g•g-12.35-10.6 g•g-15.63 g•g-12.54-9.55 g•g-13.53 g•g-11.87-5.65 g•g-14.01 g•g-12.29-9.23 g•g-132.81.31.5 g•g-10.47-5.69 g•g-10.65 g•g-10.26¬-1.38 g•g-12003-0.23 g•d-1•kg-10.1 g•d-1•kg-1 (USEPA, 1997)
Resumo:
The emission intensity of Ni2+ at 1200 nm in transparent ZnO-Al2O3-SiO2 glass ceramics containing ZnAl2O4 nanocrystals is improved approximately 8 times by Cr3+ codoping with 532 nm excitation. This enhanced emission could be attributed to an efficient energy transfer from Cr3+ to Ni2+, which is confirmed by time-resolved emission spectra. The energy transfer efficiency is estimated to be 57% and the energy transfer mechanism is also discussed. (C) 2008 Optical Society of America.
Resumo:
We study the structure, optical and magnetic characteristics of self-assembled (In,Cr) As diluted magnetic semiconductor quantum dots as a function of the As-4 flux. Increasing the surface energy by increasing the As4 pressure leads to a smaller number of larger dots for a higher As-4 flux. The remanent magnetization measured at 5K also increases with increasing As-4 flux, which is attributed to the enhancement of the effective Cr content due to the As-4-rich condition. We explore the possibility of tailoring magnetism by controlling the As-4/In flux ratio without changing the Cr concentration. Furthermore, extremely low-density QDs have also been successfully grown. Copyright (C) EPLA, 2008
