An introduction to the trapping of clusters with ion traps and electrostatic storage devices

This paper presents an introduction to the application of ion traps and storage devices for cluster physics. Some experiments involving cluster ions in trapping devices such as Penning traps, Paul traps, quadrupole or multipole linear traps are briefly discussed. Electrostatic ion storage rings and traps which allow for the storage of fast ion beams without mass limitation are presented as well. We also report on the recently developed mini-ring, a compact electrostatic ion storage ring for cluster, molecular and biomolecular ion studies.

Nano-polypyrrole supercapacitor arrays prepared by layer-by-layer assembling method in anodic aluminum oxide templates

A novel method for preparing nano-supercapacitor arrays, in which each nano-supercapacitor consisted of electropolymerized Polypyrrole (PPy) electrode / porous TiO2 separator / chemical polymerized PPy electrode, was developed in this paper. The nano-supercapacitors were fabricated in the nano array pores of anodic aluminum oxide template using the bottom-up, layer-by-layer synthetic method. The nano-supercapacitor diameter was 80 nm, and length 500 nm. Based on the charge/discharge behavior of nano-supercapacitor arrays, it was found that the PPy/TiO2/PPy array supercapacitor devices performed typical electrochemical supercapacitor behavior. The method introduced here may find application in manufacturing nano-sized electrochemical power storage devices in the future for their use in the area of microelectronic devices and microelectromechanical systems.

Symmetry of the Talbot effect and its applications

The Talbot effect is one of the most basic optical phenomena that has received extensive investigations both because its new results provide us more understanding of the fundamental Fresnel diffraction and also because of its wide applications. We summarize our recent results on this subject. Symmetry of the Talbot effect, which was reported in Optics Communications in 1995, is now realized as the key to reveal other rules for explanation of the Talbot effect for array illumination. The regularly rearranged-neighboring-phase-differences (RRNPD) rule, a completely new set of analytic phase equations (Applied Optics, 1999), and the prime-number decomposing rule (Applied Optics, 2001) are the newly obtained results that reflect the symmetry of the Talbot effect in essence. We also reported our results on the applications of the Talbot effect. Talbot phase codes are the orthogonal codes that can be used for phase coding of holographic storage. A new optical scanner based on the phase codes for Talbot array illumination has unique advantages. Furthermore, a novel two-layered multifunctional computer-generated hologram based on the fractional Talbot effect was proposed and implemented (Optics Letters, 2003). We believe that these new results should bring us more new understanding of the Talbot effect and help us to design novel optical devices that should benefit practical applications. (C) 2004 Society of Photo-Optical Instrumentation Engineers.

The morphology control of pentacene for write-once-read-many-times memory devices

We realized write-once-read-many-times (WORM) memory devices based on pentacene and demonstrated that the morphology control of the vacuum deposited pentacene thin film is greatly important for achieving the unique nonvolatile memory properties. The resulted memory devices show a high ON/OFF current ratio (10(4)), long retention time (over 12 h), and good storage stability (over 240 h). The reduction of the barrier height caused by a large interface dipole and the damage of the interface dipole under a critical bias voltage have been used to explain the transition processes.

Memory devices based on lanthanide (SM3+, EU3+, Gd3+) complexes

Memory effects in single-layer organic light-emitting devices based on Sm3+, Gd3+, and Eu3+ rare earth complexes were realized. The device structure was indium-tin-oxide (ITO)/3,4-poly(ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT)/Poly(N-vinyl carbazole) (PVK): rare earth complex/LiF/Ca/Ag. It was found experimentally that all the devices exhibited two distinctive bistable conductivity states in current-voltage characteristics by applying negative starting voltage, and more than 10(6) write-read-erase-reread cycles were achieved without degradation. Our results indicate that the rare earth organic complexes are promising materials for high-density, low-cost memory application besides the potential application as organic light-emitting materials in display devices.