Defect evolution and accompanied change of electrical properties during the GaN growth by metalorganic chemical vapor deposition

The defect evolution and its correlation with electrical properties of GaN films grown by metalorganic chemical vapor deposition are investigated. It is found that the dislocation density decreases gradually during the growth process, and the dislocation reduction rate in the island coalescence process is especially rapid. The changes in electron mobility of GaN with the increase of growth time are mainly dependent on the dislocations acting as scattering centers. Furthermore, the variation of carrier concentration in GaN may be related with the point defects and their clusters. The quality of GaN could be improved by suitably increasing the film thickness. (C) 2009 Elsevier B.V. All rights reserved.

The vegetation and climate change during Neocene and Early Quaternary in Jiuxi Basin, China

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STRUCTURAL EVOLUTION AND COMPOSITION CHANGE IN THE SURFACE REGION OF POLYPROPYLENE/CLAY NANOCOMPOSITES ANNEALED AT HIGH TEMPERATURES

A model experiment was done to clear the formation mechanism of protective layers during combustion of polypropylene (PP)/organically modified montmorillonite (OMMT) nanocomposites. The investigation was focused on the effects of annealing temperature on the structural changes and protective layer formation. The decomposition of OMMT and degradation of PP/OMMT nanocomposites were characterized by means of thermogravimetric analysis (TGA). The structural evolution and composition change in the surface region of PP/OMMT nanocomposites during heating were monitored by means of X-ray photoelectron spectroscopy (XPS), ATR-FTIR and field emission scanning electron microscopy (FESEM).

Luminescence centers and valence change of Eu2+ in KCaF3

The nature of the emission centers and the valence change of Eu2+ in KCaF3:Eu2+ depends strongly on preparation conditions. Experimental results show that there are two different d-->f emission bands, located at 425 and 510 nm, respectively. Their origin, relationship, and the effect of doping concentration on them are discussed. A Eu2+-Eu3+ valence change process is proposed. (C) 2000 Elsevier Science Ltd. All rights reserved.

VALENCY AND ITS CHANGE PROCESS OF SAMARIUM ION IN SAMARIUM FLUORIDE SYSTEM

Nonstoichiometric series SmF(x) (2.0 less-than-or-equal-to x less-than-or-equal-to 3.0) have been synthesized by reduction of samarium trifluoride with hydrogen for several times, and the stoichiometric samarium difluoride has been obtained. The structure of nonstoichiometric samarium fluoride series and the valency of samarium ion are briefly discussed. The valent change process of samarium ion at high temperatures in different atmospheres is investigated.