Rapid bioassay as indicator of potentially harmful effects for dioxin-like compounds in sample of Ya-Er Lake, China: Requirements for clean-up and comparison to chemical analysis

A rapid bioassay was established measuring the extracts of wildlife samples which were taken from Ya-Er Lake area, China. In extracts of these samples containing PCDD/Fs and PCBs, bioassay and chemically derived TCDD-equivalents (TEQs) were nearly identical. Our results indicate this bioassay is an excellent complement to chemical residue analysis and a useful tool in understanding the complex interactions of halogenated hydrocarbons. However, it must be mentioned that the proper prior clean-up method is very important for using the bioassay.

Electron diffraction and photoemission studies of clean and water-covered Si(5,5,12) and Si(112) surfaces

The structure of silicon surfaces in the orientation range (113)-(5,5,12)-(337)-(112) has been investigated using high resolution LEED and photoemission both on a spherical and on flat samples. We find that Si(5,5,12) [5.3 degrees from (113) and 0.7 degrees from (937)] is the only stable orientation between (113) and (111) and confirm the result of Baski et al. [Science 269, 1556 (1995)] that it has a 2 x 1 superstructure with a very large unit cell of 7.68 x 53.5 Angstrom(2). Adsorption measurements of water on Si(5,5,12) yield a mobile precursor kinetics with two kinds of regions saturating at 0.25 and 0.15 ML which are related to adsorption on different sites. Using these results, a modified structure model is proposed. Surfaces between (113) and (5,5,12) separate into facets of these two orientations; between (5,5,12) and (112), they separate into (5,5,12) and (111) facets. (337) facets in this range may be considered as defective (5,5,12) facets.

Slow highly charged ion O4+ induced electron emission from clean solid surfaces

The. total electron emission yields following the interaction of slow highly charged ions (SHCI) O4+ with different material surfaces (W, Au, Si and SiO2) have been measured. It is found that the electron emission yield gamma increases proportionally with the projectile velocity v ranging from 5.36 x 10(5)m/s to 10.7 x 10(5)m/s. The total emission yield is dependent on the target materials, and it turns out to follow the relationship gamma(Au) > gamma(Si)> gamma(W). The result shows that the electron emission yields are mainly determined by the electron stopping power of the target when the projectile potential energy is taken as a constant, which is in good agreement with the former studies

Research for a clean and large throughput differential pumping system

The research is to design a differential pumping system not only to achieve the pressure transition with a large throughput, but also to achieve a clean system without back-oil. In the paper, the pressure in differential stages is calculated; the differential pumping system design and equipment choice are introduced; the tests of Molecular/Booster Pump (MBP), a new kind of molecular-drag pump with large throughout and clean vacuum are described and the system experimental result and analysis are presented.

Slow highly charged ions induced electron emission from clean Si surfaces

The electron emission yields from the interaction of slow highly charged ions (SHCI) He2+, O2+ and Ne2+ with clean Si surface are measured separately. It is found that electron emission yield gamma increases proportionally to projectile kinetic energy E-p/M-p, ranging from 0.75 keV/u to 10.5 keV/u (i.e. 3.8 x 10(5) m/s <= v(p) <= 1.42 x 10(6) m/s), and it is higher for heavy ions (O2+ and Ne2+) than for light ion (He2+). For O2+ and Ne2+, gamma increases with Z(p) decreasing in our energy range, and it shows quite different from the result for higher projectile kinetic energy. After calculating the stopping power by using TRIM 2006, it is found that the fraction of secondary electrons induced by recoil atoms increases significantly at lower projectile energy, thereby leads to the differences in gamma for heavy ions O2+ and Ne2+ between lower and higher projectile kinetic energy.

反冲原子对低速离子轰击Si表面时电子发射产额的影响；Slow highly charged ions induced electron emission from clean Si surfaces

在兰州重离子加速器国家实验室电子回旋共振离子源高电荷态原子物理实验平台上,用低能(0.75keV/u≤EP/MP≤10.5keV/u,即3.8×105m/s≤vP≤1.42×106m/s)He2+,O2+和Ne2+离子束正入射到自清洁Si表面时二次电子发射产额的实验结果.结果表明电子发射产额γ近似正比于入射离子动能EP/MP.在相同动能下,γ(O)>γ(Ne)>γ(He),对于原子序数ZP比较大的O2+和Ne2+离子,ZP大者反而γ小,这与较高入射能量时的结果截然不同.通过计算不同入射能量下入射离子的阻止能损S,发现反冲原子对激发二次电子的作用随入射离子能量的降低显著增大,这正是导致在较低能量范围内二次电子发射产额与较高入射能量时存在差异的主要原因.

Templateless, surfactantless, simple electrochemical route to rapid synthesis of diameter-controlled 3D flowerlike gold microstructure with "clean" surface

We report for the first time a simple low-cost electrochemical route to synthesis of diameter-controlled hierarchical flowerlike gold microstructures with "clean'' surfaces using gold nanoplates or nanopricks as building blocks without introducing any template or surfactant.

A novel catalyst for clean production of diphenols - Ferric trisacetylacetonate MCM-41

Ferric trisacetylacetonate has been deposited within the zeolite MCM-41 and the product characterized by XRD and IR. In water at pH 7 it catalyzes the oxidation of phenol by H2O2, giving 58% conversion in 1 h at 50 degrees C: products are catechol (66%), hydroquinone (27%) and benzoquinone (7%). Other oxidants and solvents are much less effective. UV-VIS spectra suggest a radical substitution mechanism, and a pollution-free process for phenol hydroxylation is now possible.

Theoretical investigation on the adsorption of Ag+ and hydrated Ag+ cations on clean Si(111) surface

In this paper, the adsorption of Ag+ and hydrated Ag+ cations on clean Si(111) surface were investigated by using cluster (Gaussian 03) and periodic (DMol(3)) ab initio calculations. Si(111) surface was described with cluster models (Si14H17 and Si22H21) and a four-silicon layer slab with periodic boundary conditions. The effect of basis set superposition error (BSSE) was taken into account by applying the counterpoise correction. The calculated results indicated that the binding energies between hydrated Ag+ cations and clean Si(111) surface are large, suggesting a strong interaction between hydrated Ag+ cations and the semiconductor surface. With the increase of number, water molecules form hydrogen bond network with one another and only one water molecule binds directly to the Ag+ cation. The Ag+ cation in aqueous solution will safely attach to the clean Si(111) surface.

Theoretical study on adsorption of Na+ and Na+(H2O)(n) (n=1-6) on a clean Si(111) surface

To model the adsorption of Na+ in aqueous solution on the semiconductor surface, the interactions of Na+ and Na+(H2O)(n) (n = 1-6) with a clean Si(111) surface were investigated by using hybrid density functional theory (B3LYP) and Moller-Plesset second-order perturbation (MP2) methods. The Si(111) surface was described with Si8H12, Si16H20, and Si22H21 Cluster models. The effect of the basis set superposition error (BSSE) was taken into account by applying the counterpoise (CP) correction. The calculated results indicated that the interactions between the Na+ cation and the dangling bonds of the Si(111) surface are primarily electrostatic with partial orbital interactions. The magnitude of the binding energies depends weakly on the adsorption sites and the size of the clusters. When water molecules are present, the interaction between the Nal and Si(I 11) surfaces weakens and the binding energy has the tendency to saturate. On a Si22H21 cluster described surface, the optimized Na+-surface distance for Na+(H2O)(5) adsorbed at on-top site is 4.16 angstrom and the CP-corrected binding energy (MP2) is -35.4 kJ/mol, implying a weakly adsorption of hydrated Na+ cation on clean Si(111) surface.

Theoretical study of interaction between atoms of Au, Ag, Cu and clean Si(111) surface

To evaluate the interactions between the atoms of An, Ag and Cu and clean Si(111) surface, two types of silicon clusters Si4H7 and Si16H20 together with their metal complexes were studied by using hybrid (U)B3LYP density functional theory method. Optimized geometries and energies on different adsorption sites indicate that: (1) the binding energies at different adsorption sites are large (ranging from similar to 1.2 to 2.6 eV depend on the metal atoms and adsorption sites), suggesting a strong interaction between metal atom and silicon surface; (2) the most favorable adsorption site is the on top (T) site. Mulliken population analysis indicated that in the system of on top (T) site, a covalent bond is formed between metal atom and dangling bond of surface Si atom. (c) 2006 Elsevier B.V. All rights reserved.