136 resultados para Chemical deposition
em Chinese Academy of Sciences Institutional Repositories Grid Portal
Resumo:
In this paper, five Pt3Sn1/C catalysts have been prepared using three different methods. It was found that phosphorus deposited on the surface of carbon with Pt and Sn when sodium hypophosphite was used as reducing agent by optimization of synthetic conditions such as pH in the synthetic solution and temperature. The deposition of phosphorus should be effective on the size reduction and markedly reduces PtSn nanoparticle size, and raise electrochemical active surface (EAS) area of catalyst and improve the catalytic performance. TEM images show PtSnP nanoparticles are highly dispersed on the carbon surface with average diameters of 2 nm. The optimum composition is Pt3Sn1P2/C (note PtSn/C-3) catalyst in my work. With this composition, it shows very high activity for the electrooxidation of ethanol and exhibit enhanced performance compared with other two Pt3Sn1/C catalysts that prepared using ethylene glycol reduction method (note PtSn/C-EG) and borohydride reduction method (note PtSn/-B). The maximum power densities of direct ethanol fuel cell (DEFC) were 61 mW cm(-2) that is 150 and 170% higher than that of the PtSn/C-EG and PtSn/C-B catalyst.
Resumo:
The effect of the growth temperature on the surface and interface quality for the GaN/AlN multiquantum well (MQW) layer grown by metal-organic vapour chemical deposition is investigated. The obtained GaN/AlN MQW structure is almost coherent to the underlying AlGaN layer at improved growth conditions. With a relatively low growth temperature, the GaN/AlN MQW growth rate increases, the surface roughness reduces considerably and no macro steps are observed, resulting in a better periodicity of MQW.
Resumo:
用扫描电镜(SEM)观察了化学沉积Ni-P合金薄膜/单晶硅基体的结构与颗粒度,利用X射线衍射(XRD)技术测试了其化学沉积后的残余应力,测量了激光热处理后残余应力的变化规律,分析了残余应力对磨损性能及界面结合强度的影响。实验结果表明,化学沉积Ni-P合金薄膜/硅基体的残余应力均表现为拉应力,经过激光热处理后残余应力发生了变化,由高值的拉应力变为低值的拉应力或压应力;薄膜残余应力对其磨损性能有明显的影响,其磨损量随着残余应力的减小而减小;薄膜与基体结合强度随着残余应力的增大而减小,合理地选择激光热处理参数可
Resumo:
A two-step approach of preparation for SiGe/Si heterogeneous nanostructures, which combined with ultra-high vacuum chemical deposition and electrochemical anodization techniques, is demonstrated. Uniformly distributed nanostructures with a quite uniform distribution of size and morphology are obtained. A strong room-temperature photoluminescence from the nanostructures was observed with a narrow full-width at half-maximum of around 110 meV. The possible origins of the two main peaks at around 1.6 and 1.8 eV have been discussed in detail. The two-step approach is proved to be a promising method to fabricate new Si-based optoelectronic materials. (C) 2009 Elsevier B.V. All rights reserved.
Resumo:
Single crystal GaN films of hexagonal modification have been fabricated on Al2O3/Si (001) substrates via a low pressure metalorganic chemical deposition (LP-MOCVD) method. The full width at half-maximum of (0002) X-ray diffraction peak for the GaN film 1.1 mu m thick was 72 arcmin. and the mosaic structure of the film was the main cause of broadening to the X-ray diffraction peak. Al room temperature, the photoluminescence (PL) spectrum of GaN exhibited near band edge emission peaking at 365 nm.
Resumo:
An effective approach to enhance the light output power of InGaN/GaN light emitting diodes (LED) was proposed using pyramidal patterned sapphire substrates (PSS). The sapphire substrates were patterned by a selective chemical wet etching technique. GaN-based LEDs were fabricated on patterned sapphire substrates through metal organic chemical deposition (MOCVD). The LEDs fabricated on patterned sapphire substrates exhibit excellent device performance compared to the conventional LEDs fabricated on planar sapphire substrates in the case of the same growth and device fabricating conditions. The light output power of the LEDs fabricated on patterned sapphire substrates was about 37% higher than that of LEDs on planar sapphire substrates at an injection current of 20 mA. The significant enhancement is attributable to the improvement of the quality of GaN-based epilayers and improvement of the light extraction efficiency by patterned sapphire substrates.
Resumo:
Prussian blue (PB) supported on graphite powder was prepared by the chemical deposition technique and subsequently dispersed into methyltrimethoxysilane-derived gels to yield a conductive graphite organosilicate composite. The composite was used as the electrode material to fabricate a three-dimensional PB-modified electrode. PB acts as a catalyst, graphite powder ensures conductivity by percolation, the silicate provides a rigid porous backbone, and the methyl groups endow hydrophobicity and thus limit the wetting section of the modified electrode. The chemically modified electrode can electrocatalyze the oxidation of hydrazine, and exhibits a distinct advantage of polishing in the event of surface fouling, as well as simple preparation, good chemical and mechanical stability and good repeatability of surface-renewal. Hydrodynamic voltammetric experiments were performed to characterize the electrode as an amperometric sensor for the determination of hydrazine. (C) 2000 Elsevier Science B.V. All rights reserved.
Resumo:
Indium(III) hexacyanoferrate(II/III) (InHCF) supported on graphite powder was prepared using the in situ chemical deposition procedure and subsequently dispersed into methyltrimethoxysilane-derived gels to yield a conductive graphite organosilicate composite. The composite was used as the electrode material to fabricate a three-dimensional InHCF-modified electrode. InHCF acts as a catalyst, graphite powder ensures conductivity by percolation, the silicate provides a rigid porous backbone and the methyl groups endow hydrophobicity and thus limit the wetting section of the modified electrode. The chemically modified electrode can electrocatalyze the oxidation of thiosulfate, and exhibits a good repeatability of surface-renewal by simple mechanical polishing, as well as simple preparation, good chemical and mechanical stability.
Resumo:
Cobalt(II) hexacyanoferrate (CoHCF) was deposited on graphite powder by an in situ chemical deposition procedure and then dispersed into methyltrimethoxysilane-derived gels to prepare a surface-renewable CoHCF-modified electrode. The electrochemical behavior of the modified electrode in different supporting electrolyte solutions was characterized by cyclic voltammetry. In addition, square-wave voltammetry was employed to investigate the pNa-dependent electrochemical behavior of the electrode. The CoHCF-modified electrode showed a high electrocatalytic activity toward thiosulfate oxidation and could thus be used as an amperometric thiosulfate sensor.
Resumo:
Graphite powder-supported nickel(II) hexacyanoferrate (NiHCF) was prepared by the in situ chemical deposition method and then dispersed into methyltrimethoxysilane-derived gels to form a conductive composite. The composite was used as electrode material to construct a surface-renewable three-dimensional NiHCF-modified carbon ceramic electrode. Electrochemical behavior of the chemically modified electrode was well characterized using cyclic and square-wave voltammetry. The electrode presented a good electrocatalytic activity toward the oxidization of thiosulfate and thus was used as an amperometric sensor for thiosulfate in the photographic waste effluent. In addition, the electrode exhibited a distinct advantage of surface-renewal by simple mechanical polishing, as well as simple preparation, good chemical and mechanical stability. (C) 2001 Elsevier Science B.V. All rights reserved.
Resumo:
A procedure is described for the preparation of a tubular electrode by chemical deposition of platinum at the end of a fused-silica capillary. The properties of the electrode were tested under liquid chromatographic conditions, demonstrating that both the static and the dynamic behaviour of the detection system satisfy the requirements of capillary chromatographic separations and compare well with a wall-jet amperometric system and with UV photometric detection. The detection system described is easy to prepare and does not require any time-consuming positioning of the electrode system as it is integrated into the separation part of the apparatus. (C) 1998 Elsevier Science B.V.
Resumo:
A suit of cherts deposited in deep-ocean basin of South China during terminal Ediacaran and the beginning of Early Cambrian (about 550~540Ma). The origin of these cherts are controversial, and contrary standpoints exist for the redox state of the terminal Ediacaran deep-ocean because of poor study. In this paper, a detailed sedimentology, element and stable isotope geochemistry study were conducted for cherts of Liuchapo Formation in Anhua County, Hunan Province, Laobao Formation in Sanjiang County, Guangxi Province, and Piyuancun Formation in Xiuning County, Anhui Province. Some conclusions were drawn: (1) These cherts were mainly formed through chemical deposition of dissolved silica derived from chemical weathering in continent. Biological processes played a part in the cherts formation, however, the influence of hydrothermal fluids and detritus materials were trivial. (2) The terminal Ediacaran deep-ocean was anoxic and gradually oxidized. (3) Intense bacterial sulfate reduction decreased sulfate concentration in the ocean and the water column became euxinic during Ediacaran-Cambrian transition period. (4) Due to a high CO2 concentration in the terminal Ediacaran atmosphere, chemical weathering in continent dramatically increased and huge amounts of nutrimental material were transferred into ocean. The biota bloomed because of the nutrimental material. Degradation of huge amounts of organic matter maintained dissolved organic carbon reservoir in the ocean, and prolonged the deep-ocean anoxia.
Resumo:
Bulk single crystals b-FeSi2, as a new photoelectric and thermoelectric material, has been successfully grown using chemical vapor transport technique by using iodine as transport agent in a sealed ampoule. The effects of crystal growth condition on quality and morphologies of the single crystals were studied. Both needle-like and grain-like single crystals were gained. By changing substrate temperature, tetrahedral high quality a-FeSi2 single crystals were also obtained.
Resumo:
We report on the realization of ZnO homojunction light-emitting diodes (LEDs) fabricated by metalorganic chemical vapor deposition on (0001) ZnO bulk substrate. The p-type ZnO epilayer was formed by nitrogen incorporation using N2O gas as oxidizing and doping sources. Distinct electroluminescence (EL) emissions in the blue and yellow regions were observed at room temperature by the naked eye under forward bias. The EL peak energy coincided with the photoluminescence peak energy of the ZnO epilayer, suggesting that the EL emissions emerge from the ZnO epilayer. In addition, the current-voltage and light output-voltage characteristics of ZnO homojunction LEDs have also been studied. (c) 2006 American Institute of Physics.