Study on current-random wave forces acting on a framework

The forces of random wave plus current acting on a simplified offshore platform (jacket) model have been studied numerically and experimentally. The numerical results are in good agreement with experiments. The mean force can be approximated as a function of equivalent velocity parameter and the root-mean-square force as a function of equivalent significant wave height parameter.

高频等离子法制取超细Si_3N_4粉末

本文述及高频等离子法制取超细Si_3N_4粉末的原理、装置,工艺参数及粉末性能的一些检测结果。利用SiCl_4+NH_3气-气相反应,所得白色粉末含有NH_4Cl晶体,热重分析表明350℃失重停止,280℃失重速率最快,经400～700℃处理后的粉末仍为非晶,不含NH_4Cl,BET测得比表面积为75.8 m~2/g,X光小角度散射法测粒子半径分布主峰R为100～150,且符合正态对数分布规律,平均直径=527;1400℃处理后,X光衍射测得主相为α-Si_3N_4、次相为Si_2N_2O,粒径明显长大,平均直径达1700。

激波管在酚醛树脂高温热解动力学研究中的应用

使用激波管作为加热手段,利用其加热速率快的优点,突破了传统方法在加热速率上的限制,研究了酚醛树脂在1400～1700K温度范围内的热解动力学.主要碳氢产物是甲烷、乙烯、乙炔和苯.通过对反应扩散过程的分析,考察了扩散对热解过程的影响.结果表明,实验中酚醛树脂的反应扩散过程迅速达到稳态,扩散影响可以忽略,首次获得了酚醛树脂在芳环开环热解机制下的热解速率常数.

酚醛树脂高温热解的激波管实验研究

采用激波管方法研究了酚醉树脂在温度1100K～1800K范围之间的热解过程.在激波管高温和短实验时间条件下,分析了实验样品颗粒在高温气相中的传热过程,讨论了样品颗粒达到热平衡的条件.通过色谱和质谱方法检测热解产物,获得了酚醛树脂高温热解产物分布和热解速率常数.酚醛树脂高温热解最主要的产物为水、一氧化碳、氢、乙炔和苯.温度1400 K将酚醛树脂热解分为高温和低温区,分别表现出不同的热解速率常数与温度的关系.

基于3×3耦合器的马赫-曾德尔干涉仪的光纤光栅波长解调技术

介绍了一种基于3×3和2×2光纤耦合器构成的非平衡马赫-曾德尔干涉仪的波长解调方案。理论分析和数据对比表明，相对于由两个2×2光纤耦合器构成的马赫-曾德尔干涉仪，本干涉仪具有宽谱的灵敏度、能跟踪波长的变化方向和相位展开的优点，实验方案用于测量固定在悬臂梁上的传感光纤布拉格光栅（FBG）的峰值波长变化，获得了±1pm的静态波长解调精度，在10Hz处的动态分辨率为27nε/√Hz。相位展开算法使得应变测量范围达到了2014με，对应的相位变化为3．22π。

Annealing effects of sapphire substrate on properties of ZnO films grown by magnetron sputtering

The annealing effects of sapphire substrates on the quality of epitaxial ZnO films grown by dc reactive magnetron sputtering were studied. The atomic steps formed on (0001) sapphire (alpha-Al2O3) substrates surface by annealing at high temperature were analyzed by atomic force microscopy. Their influence on the growth of ZnO films was examined by X-ray diffraction and photoluminescence measurements. Experimental results indicate that the film quality is strongly affected by annealing treatment of the sapphire substrate surface. The optimum annealing temperature of sapphire substrates for ZnO grown by magnetron sputtering is 1400 degrees C for 1 h in air.