Growth characters and photosynthetic capacity of Gracilaria lemaneiformis as a biofilter in a shellfish farming area in Sanggou Bay, China

Experiments on growth characters and ecological functions of the macroalgae Gracilaria lemaneiformis, collected from south China, were conducted in polyculture areas of kelp and filter-feeding bivalve in Sanggou Bay in Weihai City, Shandong, in north China from May 2002 to May 2003. The results of 116 days cultivation showed that the average wet weight of alga increased 89 times from 0.1 to 8.9 kg rope(-1), with an average specific growth rate ( based on wet weight) of 3.95% per day. The most favorable water layer for its growth was 1.0 - 1.8 m below the surface in July and August, with an average specific growth rate of 8.2% per day in 30-day experiments. Photosynthetic activity changed seasonally, with an average of 7.3 mg O-2 g dw(-1) h(-1). The maximum rate (14.4 mg O-2 g dw(-1) h(-1)) was recorded in July, or 19.3 mg CO2 g dw(-1) h(-1), while the minimum (0.40 mg CO2 g dw(-1) h(-1)) was in April. This study indicated that the culture of G. lemaneiformis is an effective way to improve water quality where scallops are cultivated intensively.

Experimental Study on the Generation and Characteristics of Plasma Jets

报道热等离子体射流产生及射流特性的实验研究结果。。采用同一个直流等离子体发生器，工作气体流量小时产生出层流等离子体长射流，射流长度随气体流量或弧电流的增加而明显增加；工作气体流量大时则产生出湍流等离子体短射流，此时射流长度几乎与工作气体流量或弧电流无关；在层流与湍流等离子体射流工况之间，存在一个流动状况不稳定的过渡区，此时等离子体射流的平均长度随气流量的加大而减小，但随弧电流的加大而明显加大。层流等离子体长射流有相当好的刚性。

Microstructure and characteristics in the organic matrix layers of nacre

The direct observation of a type of microstructure in the organic matrix layers of nacre was obtained with a transmission electron microscope. The microstructure, which is referred to as mineral bridge in the biomineralization, is nanoscale and randomly distributed in the layers. Statistical analysis gives the distribution laws and characteristics of mineral bridges in the organic matrix layers. The existence of mineral bridges in nacre was confirmed, and it was shown that the microarchitecture of nacre should be described as a "brick-bridge-mortar" arrangement rather than traditional "brick and mortar" one.

Design guidelines and characteristics of beam-shaping microstructure optical fibers

Microstructure optical fibers with flat-top fundamental mode are first proposed by introducing a low-index inner core into the core of index-guiding microstructure optical fibers. The design guidelines and characteristics of beam-shaping microstructure optical fibers are demonstrated. The interrelationships of inner-core index with laser wavelength, air hole diameter and size of inner core are investigated. The influence of the relative size of inner core on the spatial profile of the fundamental mode is demonstrated. Moreover, sensitivity of the flat-top fundamental mode profile from the slight change of the optimum inner-core index value is studied. Starting from these results we deduce that it is possible to fabricate beam-shaping microstructure fibers with nowadays technique. (C) 2005 Elsevier B.V. All rights reserved.

Design guidelines and characteristics for a kind of four-layer large flattened mode fibers

A theoretical method to analyze a kind of four-layer large flattened mode (LFM) fibers is presented. The properties of the fiber, including the fundamental and higher-order modal fields, effective area and bending loss are discussed by comparison. At the same time, the reasons for the different characteristics are considered. The obtained results indicate that the effective area of the four-layer LFM fiber is about 1.3 times larger than that of the conventional standard step-index fiber and the fiber can suppress the higher-order modes via bending effectively. The four-layer LFM fiber has less efficient bend-induced filtering ability than the conventional step-index fiber; however, it has more efficient filtering ability than the three-layer LFM fiber. (C) 2007 Elsevier GmbH. All rights reserved.

Design and characteristics of quantum cascade laser-based CO detection system

National High Technology Research and Development Program of China 2007AA03Z112；Program of Ministry of Education of China 20060183030；Program of Jilin Provincial Science and Technology Department of China 20070709；Program of Bureau of Science and Technology of Changchun City 2007107

The formation and characteristics of Si1-xCx alloys in Si crystals by means of implantation of cions with different doses

Carbon ions with concentration of (0.6-1.5)% were implanted into silicon crystals at room temperature and Si1-xCx alloys were grown by solid phase epitaxy with high temperature annealing. The formation and characteristics of Si1-xCx alloys under different implanted carbon doses were studied. If the implanted carbon atom concentration was less than 0.6%, carbon atoms would tend to combine with the defects produced during implantation and it was difficult for Si1-xCx alloys to form during annealing at 850-950 degreesC. With the increase of implanted C concentration, almost all implanted carbon atoms would occupy substitution positions to form Si1-xCx alloys, but only part of implanted carbon atoms would occupy the substitution position to form Si1-xCx alloys as the implanted dose increased to 1.5 %. Most Si1-xCx alloy phases would vanish as the annealing temperature was increased higher.

CONTROLLED FORMATION AND CHARACTERISTICS OF INTERFACES IN GAAS/ALGAAS SINGLE QUANTUM-WELLS

The influence of heterostructure quality on transport and optical properties of GaAs/AlGaAs single quantum wells with different qualities was studied. In a conventional sample-A, the transport scattering time and the quantum scattering time are small and close to each other. The interface roughness scattering is a dominant scattering mechanism. From comparison between theory and experiment, interface roughness with fluctuation height 2.5 Angstrom and the lateral size of 50-70 Angstrom were estimated. For samples introducing superlattices instead of AlGaAs layers or by utilizing growth interruption, both the transport and PL measurements showed that interfaces were rather smooth in the samples. The two scattering times are much longer. The interface roughness scattering is relegated to an unimportant position. Results demonstrated that it is important to control the formation of heterostructures in order to improve the interface quality.

Study of GSMBE growth and characteristics of high-quality strained In0.63Ga0.37As/InP quantum wells

High-quality compressively strained In0.63Ga0.37As/InP quantum wells with different well widths (1-11 nm) have been grown coherently on InP substrates using a home-made gas source molecular beam epitaxy (GSMBE) system. The indium composition in the wells of the sample was determined by means of high-resolution X-ray diffraction and its computer simulation. it is found that the exciton transition energies determined by photoluminescence (PL) at 10 K are in good agreement with those calculated using a deformation potential model. Sharp and intense peaks for each well can be well resolved in the 10 K PL spectra. For wells narrower than 4 nm, the line width of the PL peaks are smaller than the theoretical values of the line-width broadening due to 1 hit interface fluctuation, showing that the interface fluctuation of our sample is within 1 ML. For wells of 7 and 9 nm, the PL peak widths are as low as 4.5 meV.

Numerical Analysis of Steady Current and Temper ature Distributions and Characteristics of Transverse Mode in VCSEL

国家自然科学基金

The SPER and characteristics of Si1-yCy alloys

\Si1-yCy alloys with carbon composition of 0.5 at.% were successfully grown on n-Si(100) substrate by solid phase epitaxy recraystallization. The result was presented in this paper. With the help of the SiO2 capping layer, rather uniform carbon profile in amorphous Si layer was obtained by dual-energy implantation. Since ion-flow was small and implantation time was long enough, the emergency of beta-SiC was avoided and the dynamic annealing effect was depressed. The pre-amorphization of the Si substrate increased the fraction of the substitutions carbon and the two-step annealing reduced point defects. As a result, Si1-yCy alloys with high quality was recrystallized on Si substrate.