CdZnTe核辐射探测器的制备

本文简要介绍了采用国产碲锌镉(CdZnTe)单晶材料制备的CdZnTe核辐射探测器工艺及测试结果。对α带电粒子Thc-c/(6.04MeV、8.78MeV)FWHM=2.0%2、41Am(5.486MeV)FWHM=2.3%,137Cs低能γ(662keV)FWHM=9.7%和207Bi(1048.1keV、975.6keV)内转换电子所测定的能谱。

高能Ar~+辐照P型CdZnTe的电学特性和光致发光

采用能量 2 Ge V、剂量 10 1 0— 10 1 3cm- 2的 Ar+辐照 P型 Cd0 .96 Zn0 .0 4Te材料 ,对辐照前后和不同辐照剂量的样品进行了电学测试和光致发光研究 .实验结果和分析表明 ,Ar+ 辐照在 Cd0 .96 Zn0 .0 4Te中产生了更大密度的受主型缺陷和散射中心 ,引起材料载流子 (空穴 )浓度的增大和迁移率的降低 .随着辐照剂量的增大 ,载流子迁移率的降低要比载流子浓度增大得快 ,导致材料电阻随辐照剂量增大而增大

A low noise charge sensitive preamplifier with switch control feedback resistance

In this paper, the design and analysis of a new low noise charge sensitive preamplifier for silicon strip, Si(Li), CdZnTe and CsI detectors etc. with switch control feedback resistance were described, the entire system to be built using the CMOS transistors. The circuit configuration of the CSP proposed in this paper can be adopted to develop CMOS-based Application Specific Integrated Circuit further for Front End Electronics of read-out system of nuclear physics, particle physics and astrophysics research, etc. This work is an implemented design that we succeed after a simulation to obtain a rise time less than 3ns, the output resistance less than 94 Omega and the linearity almost good.

基于DMOS管的电荷灵敏前置放大器设计；Design of A Charge Sensitive Preamplifier Based on DMOS FET

提出了一种由DMOS场效应管构成的电荷灵敏前置放大器,可用于硅,Si(Li),CdZnTe及CsI探测器。该前置放大器采用不同于传统的阻容反馈式的电路结构,完全使用MOS管搭建,该前放的设计完成为设计实现ASIC电路准备了技术基础。由Multisi m仿真结果看出该电荷灵敏前置放大器输出信号上升时间小于15ns,并且具有很好的稳定性。