Effects of annealing on self-organized InAs quantum islands on GaAs (100)

Self-organized InAs islands on (001) GaAs grown by molecular beam epitaxy were annealed and characterized with photoluminescence (PL) and transmission electron microscopy (TEM). The PL spectra from the InAs islands demonstrated that annealing resulted in a blueshift in peak energy, a reduction in intensity, and a narrower linewidth in the PL peak. In addition, the TEM analysis revealed the relaxation of strain in some InAs islands with the introduction of the network of 90 degrees dislocations. The correlation between the changes in the PL spectra and the relaxation of strain in InAs islands was discussed. (C) 1998 American Institute of Physics. [S0003-6951(98)01850-6].

Effects of growth interruption on self-assembled InAs/GaAs islands

The effect of growth interruption on the InAs deposition and its subsequent growth as self-assembled island structures, in particular the material transport process of the InAs layers has been investigated by photoluminescence and transmission electron microscopy measurements. InAs material in structures with only coherent islands transfers from the wetting layer to the formed islands and the growth interruption causes a red shift of PL peak energy. On the other hand, the PL peak shifts to higher energy in structures containing simultaneously coherent and noncoherent islands with dislocations. In this case, the noncoherent islands capture InAs material from the surrounding wetting layer as well as coherent islands, which casues a reduction in the size of these islands. The variations in the PL intensity and line width are also discussed. (C) 1998 Elsevier Science B.V. All rights reserved.

Material transport in self-assembled InAs/GaAs quantum dot ensemble

Introducing the growth interruption between the InAs deposition and subsequent GaAs growth in self-assembled quantum dot (QD) structures, the material transport process in the InAs layers has been investigated by photoluminescence and transmission electron microscopy measurement. InAs material in structures without misfit dislocations transfers from the wetting layer to QDs corresponding to the red-shift of PL peak energy due to interruption. On the other hand, the PL peak shifts to higher energy in the structures with dislocations. In this case, the misfit dislocations would capture the InAs material from the surrounding wetting layer and coherent islands leading to the reduction of the size of these QDs. The variations in the PL intensity and Linewidth are also discussed.

Structural and optical changes in GaAs/InAs/GaAs structure induced by thermal annealing

Self-organized InAs quantum; dots sheets are grown on GaAs(100) substrate and tapped by 80nm GaAs layer with molecular beam epitaxy. Samples were annealed and characterized with Raman spectra, transmission electron microscopy (TEM) and photolumincscence (PL). The Raman spectra indicates arsenic clusters in the GaAs capping layer. The TEM analysis revealed the relaxation of strain in some InAs islands with the introduction of the network of 90 dislocations. In addition, the structural changes also lead to the changes of the PL spectra from me InAs islands. Their correlation was discussed, Our results suggest:est that annealing may be used to intentionally modify me properties of self-organized InAs islands on GaAs.

Material transport in self-assembled InAs/GaAs quantum dot ensemble

Introducing the growth interruption between the InAs deposition and subsequent GaAs growth in self-assembled quantum dot (QD) structures, the material transport process in the InAs layers has been investigated by photoluminescence and transmission electron microscopy measurement. InAs material in structures without misfit dislocations transfers from the wetting layer to QDs corresponding to the red-shift of PL peak energy due to interruption. On the other hand, the PL peak shifts to higher energy in the structures with dislocations. In this case, the misfit dislocations would capture the InAs material from the surrounding wetting layer and coherent islands leading to the reduction of the size of these QDs. The variations in the PL intensity and Linewidth are also discussed.

Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer

The size and shape Evolution of self-assembled InAs quantum dots (QDs) influenced by 2.0-ML InAs seed layer has been systematically investigated for 2.0, 2.5, and 2.9-ML deposition on GaAs(1 0 0) substrate. Based on comparisons with the evolution of InAs islands on single layer samples at late growth stage, the bimodal size distribution of InAs islands at 2.5-ML InAs coverage and the formation of larger InAs quantum dots at 2.9-ML deposition have been observed on the second InAs layer. The further cross-sectional transmission electron microscopy measurement indicates the larger InAs QDs: at 2.9-ML deposition on the second layer are free of dislocation. In addition, the interpretations for the size and shape evolution of InAs/GaAs QDs on the second layer will be presented. (C) 2001 Elsevier Science B.V. All lights reserved.

Effects of seed layer on the realization of larger self-assembled coherent InAs/GaAs quantum dots

The size and shape evolution of self-assembled InAs quantum dots (QDs) influenced by 2.0 ML InAs seed layer has been systematically investigated for 2.0, 2.5, and 2.9 ML deposition on GaAs(100) substrate. Based on comparisons with the formation of large incoherent InAs islands on single-layer samples at late growth stage, the larger coherent InAs quantum dots at 2.9 ML deposition has been observed on the second InAs layer. A simple model analysis accounting for the surface strain distribution influenced by buried islands gives a stronger increment of critical QD diameter for dislocation nucleation on the second layer in comparison with the single-layer samples. Additionally, the inhibition of dislocation nucleation in InGaAs/GaAs large islands can also be explained by our theoretical results. (C) 2000 American Institute of Physics. [S0021-8979(00)08922-2].

Size quantization effects in InAs self-assembled islands on InP(001) at the onset of 2D-to-3D transition

Photoluminescence spectroscopy has been used to investigate self-assembled InAs islands in InAlAs grown on InP(0 0 1) by molecular beam epitaxy, in correlation with transmission electron microscopy. The nominal deposition of 3.6 monolayers of InAs at 470 degrees C achieves the onset stage of coherent island formation. In addition to one strong emission around 0.74 eV, the sample displaces several emission peaks at 0.87, 0.92. 0.98, and 1.04 eV. Fully developed islands that coexist with semi-finished disk islands account for the multipeak emission. These results provide strong evidence of size quantization effects in InAs islands. (C) 1999 Elsevier Science B.V. All rights reserved.

Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer

The size and shape Evolution of self-assembled InAs quantum dots (QDs) influenced by 2.0-ML InAs seed layer has been systematically investigated for 2.0, 2.5, and 2.9-ML deposition on GaAs(1 0 0) substrate. Based on comparisons with the evolution of InAs islands on single layer samples at late growth stage, the bimodal size distribution of InAs islands at 2.5-ML InAs coverage and the formation of larger InAs quantum dots at 2.9-ML deposition have been observed on the second InAs layer. The further cross-sectional transmission electron microscopy measurement indicates the larger InAs QDs: at 2.9-ML deposition on the second layer are free of dislocation. In addition, the interpretations for the size and shape evolution of InAs/GaAs QDs on the second layer will be presented. (C) 2001 Elsevier Science B.V. All lights reserved.

An experimental study on turbulent coherent structures near a sheared air-water interface

The turbulence structures near a sheared air-water interface were experimentally investigated with the hydrogen bubble visualization technique. Surface shear was imposed by an airflow over the water flow which was kept free from surface waves. Results show that the wind shear has the main influence on coherent structures under air-water interfaces. Low- and high- speed streaks form in the region close to the interface as a result of the imposed shear stress. When a certain airflow velocity is reached, "turbulent spots" appear randomly at low-speed streaks with some characteristics of hairpin vortices. At even higher shear rates, the flow near the interface is dominated primarily by intermittent bursting events. The coherent structures observed neat sheared air-water interfaces show qualitative similarities with those occurring in near-wall turbulence. However, a few distinctive phenomena were also observed, including the fluctuating thickness of the instantaneous boundary layer and vertical vortices in bursting processes, which appear to be associated with the characteristics of air-water interfaces.

Coherent Structures in Transition of a Flat-Plate Boundary Layer at Ma=0.7

Direct numerical simulation (DNS) of a spatially evolving flat-plate boundary layer transition process at free stream Mach number 0.7 is performed. Tollmien-Schlichting (T-S) waves are added on the inlet boundary as the disturbances before transition. Typical coherent structures in the transition process are investigated based on the second invariant of velocity gradient tensor. The instantaneous shear stress and the mean velocity profile in the transition region are studied. In our view, the fact that the peak value of shear stress in the stress concentration area increases and exceeds a threshold value during the later stage of the transition process plays an important role in the laminar breakdown process.

Evolution of three-dimensional coherent structures in compressible axisymmetric jet

A high order difference scheme is used to simulate the spatially developing compressible axisymmetric jet. The results show that the Kelvin-Helmholtz instability appears first when the jet loses its stability, and then with development of jet the increase in nonlinear effects leads to the secondary instability and the formation of the streamwise vortices. The evolution of the three-dimensional coherent structure is presented. The computed results verify that in axisymmetric jet the secondary instability and formation of the streamwise vortices are the important physical mechanism of enhancing the flow mixing and transition occurring.

Behaviour analysis of numerical solutions and simulation of coherent structures in compressible mixing layers

For understanding the correctness of simulations the behaviour of numerical solutions is analysed, Tn order to improve the accuracy of solutions three methods are presented. The method with GVC (group velocity control) is used to simulate coherent structures in compressible mixing layers. The effect of initial conditions for the mixing layer with convective Mach number 0.8 on coherent structures is discussed. For the given initial conditions two types of coherent structures in the mixing layer are obtained.

关于湍流中术语Coherent Structure的中文译法

<正> 中文术语“拟序结构”来源于湍流研究中的英文术语“coherent structure”。 70年代初,对剪切层和自由射流的实验观察发现,这些湍流流动中存在着大尺度的涡旋结构。当初他们称之为大尺度“序的(ordered)”或“有组织的(organized)”结构,它对剪切流如混合层,边界层、射流和尾流的早期发展起着决定性的作用。1974年3月26—29日在英国Southampton召开的专题讨论会上,不少学者称之为“coherent

An improvement on the theoretical model for the large-scale coherent structures in the outer region of a turbulent boundary layer

According to the experimental results, there exist large-scale coherent structures in the outer region of a turbulent boundary layer, which have been studied by many authors.As experimental results, Antonia (1990) showed the phase- aver aged streamlines and isovorticity lines of the large-scale coherent structures in a turbulent boundary layer for different Reynolds numbers. Based on the hydrodynamic stability theory, the 2-D theoretical model for the large-scale structures was proposed by Luo and Zhou, in which the eddy viscosity was defined as a complex function of the position in the normal direction. The theoretical results showed in ref. were in agreement with those in ref. However, there were two problems in the results. One is that in the experimental results, there were divergent focuses between two saddle points in the streamlines, but in the theoretical results, there were centers. The other is that the stretched parts of the isovorticity lines appear at the location of centers in the theoretical results, while in the experimental results they located somewhere between the focuses and saddle points. The reason is that the computations were based on a 2-D model.