Applicability Range of Stoneys Formula and Modified Formulas for a Film/Substrate Bilayer

In addition to the layer thickness and effective Young’s modulus, the impact of the kinematic assumptions, interfacial condition, in-plane force, boundary conditions, and structure dimensions on the curvature of a film/substrate bilayer is examined. Different models for the analysis of the bilayer curvature are compared. It is demonstrated in our model that the assumption of a uniform curvature is valid only if there is no in-plane force. The effects of boundary conditions and structure dimensions, which are not-fully-included in previous models are shown to be significant. Three different approaches for deriving the curvature of a film/substrate bilayer are presented, compared, and analyzed. A more comprehensive study of the conditions regarding the applicability of Stoney’s formula and modified formulas is presented.

The Effect of Periodic Segmentation Cracks on the Interfacial Debonding: Study on Interfacial Stresses

Hard coatings on relatively soft substrate always face the danger of debonding along the interface. Interfacial stresses are considered to be the initial driving force for the interfacial debonding of the relatively strong bonded coatings. Interfacial stresses due to the mismatch of strain between the coating and substrate are simulated with FEM firstly. The distribution of the interfacial stresses is achieved, which confirms an excessive stresses concentration near the interface end. Subsequently, the redistribution of interfacial stresses is calculated for a coating with periodic segmentation cracks. Results indicate that the distribution of interfacial stresses is altered greatly with the periodic segmentation cracks. To reveal the effect of the spacing of the periodic segmentation cracks on the distribution of interfacial stresses, different crack density is modeled within the coating. It is found that that the peak values of the interfacial stresses decrease with the increase of crack density, i.e. with reduction of spacing of segmentation cracks.

On the Formation of Periodic Segmentation Cracks in a Coating Plated on a Substrate with Periodic Subsurface Inclusions

The mechanism of the formation of periodic segmentation cracks of a coating plated on a substrate with periodic subsurface inclusions (PSI) is investigated. The internal stress in coating and subsequently the strain energy release rate (SERR) of the segmentation cracks are computed with finite element method (FEM). And the effect of the geometrical parameters of the PSI is studied. The results indicate that the ratio of the width of the inclusion to the period of the repeated structure has an optimum value, at which the maximum internal tensile stress and SERR arise. On the other hand, the ratio of the max-thickness of the inclusion to the thickness of the coating has a threshold value, above which the further increase of this ratio should seldom influence the internal stress or the SERR.

Extended Stoney'S Formula For A Film-Substrate Bilayer With The Effect Of Interfacial Slip

The curvature-stress relation is studied for a film-substrate bilayer with the effect of interfacial slip and compared with that of an ideal interface without interfacial slip. The interfacial slip together with the dimensions, elastic and interfacial properties of the film and substrate layers can cause a significant deviation of curvature-stress relation from that with an ideal interface. The interfacial slip also results in the so-called free edge effect that the stress, constraint force, and curvature vary dramatically around the free edges. The constant curvature as predicted by Stoney's formula and the Timoshenko model of an ideal interface is no longer valid for a bilayer with a nonideal interface. The models with the assumption of an ideal interface can also lead to an erroneous evaluation on the true stress state inside a bilayer with a nonideal interface. The extended Stoney's formula incorporating the effects of both the layer dimensions and interfacial slip is presented.

On The Interaction Of Channeling/Segmentation Cracks Of Coating: Study On The Critical Spacing

Channeling/segmentation cracks may arise in the coating subjected to in-plane tensile stress. The interaction between these multiple cracks, say the effect of the spacing between two adjacent cracks oil the behaviors of channels themselves and the interface around the interface corners, attracts wide interest. However, if the spacing is greater than a specific magniture,, namely the Critical Spacing (CS), there should be no interaction between such channeling/segmentation cracks. In this study, file mechanism of the effect of the crack spacing oil the interfacial stress around the interface corner will be Interpreted firstly. Then the existence of the CS will be verified and the relationship between the CS and the so-called stress transfer length Ill coating will be established for plane strain condition. Finally, the dependence of the stress transfer length, simultaneously of the CS, on the sensitive parameters will be investigated with finite element method and expressed with a simple empirical formula. (C) 2007 Elsevier Ltd. All rights reserved.

Interface Layer Effect On The Stress Distribution Of A Wafer-Bonded Bilayer Structure

The interface layer plays an important role in stress transfer in composite structures. However, many interface layer properties such as the modulus, thickness, and uniformity are difficult to determine. The model developed in this article links the influence of the interface layer on the normal stress distribution along the layer thickness with the layer surface morphology before bonding. By doing so, a new method of determining the interfacial parameter(s) is suggested. The effects of the layer thickness and the surface roughness before bonding on the normal stress distribution and its depth profile are also discussed. For ideal interface case with no interfacial shear stress, the normal stress distribution pattern can only be monotonically decreased from the interface. Due to the presence of interfacial shear stress, the normal stress distribution is much more complex, and varies dramatically with changes in the properties of the interface layer, or the dimensions of the bonding layers. The consequence of this dramatic stress field change, such as the shift of the maximum stress from the interface is also addressed. The size-dependent stress distribution in the thickness direction due to the interface layer effect is presented. When the interfacial shear stress is reduced to zero, the model presented in this article is also demonstrated to have the same normal stress distribution as obtained by the previous model, which does not consider the interface layer effect.

Novel approach for region merging and image segmentation for human-computer interaction

For the purpose of human-computer interaction (HCI), a vision-based gesture segmentation approach is proposed. The technique essentially includes skin color detection and gesture segmentation. The skin color detection employs a skin-color artificial neural network (ANN). To merge and segment the region of interest, we propose a novel mountain algorithm. The details of the approach and experiment results are provided. The experimental segmentation accuracy is 96.25%. (C) 2003 Society of Photo-Optical Instrumentation Engineers.

Spatiotemporal segmentation based on two-dimensional spatiotemporal entropic thresholding

A novel spatiotemporal segmentation technique is further developed for extracting uncovered background and moving objects from the image sequences, then the following motion estimation is performed only on the regions corresponding to moving objects. The frame difference contrast (FCON) and local variance contrast (LCON), which are related to the temporal and spatial homogeneity of the image sequence, are selected to form the 2-D spatiotemporal entropy. Then the spatial segmentation threshold is determined by maximizing the 2-D spatiotemporal entropy, and the temporal segmentation point is selected to minimize the complexity measure for image sequence coding. Since both temporal and spatial correlation of an image sequence are exploited, this proposed spatiotemporal segmentation technique can further be used to determine the positions of reference frames adaptively, hence resulting in a low bit rate. Experimental results show that this segmentation-based coding scheme is more efficient than usual fixed-size coding algorithms. (C) 1997 Society of Photo-Optical Instrumentation Engineers.

Molecular beam epitaxy growth and photoluminescence of type-II (GaAs1-xSbx/InyGa1-yAs)/GaAs bilayer quantum well

We report a systematical study on the molecular beam epitaxy growth and optical property of (GaAs1-xSbx/In-y Ga1-yAs)/GaAs bilayer quantum well (BQW) structures. It is shown that the growth temperature of the wells and the sequence of layer growth have significant influence on the interface quality and the subsequent photoluminescence (PL) spectra. Under optimized growth conditions, three high-quality (GaAsSb0.29/In0.4GaAs)/GaAs BQWs are successfully fabricated and a room temperature PL at 1314 nm is observed. The transition mechanism in the BQW is also discussed by photoluminescence and photoreflectance measurements. The results confirm experimentally a type-II band alignment of the interface between the GaAsSb and InGaAs layers.

Photoluminescence study of (GaAs1-xSbx/InyGa1-yAs)/GaAs bilayer quantum well grown by molecular beam epitaxy

Photoluminescence study of (GaAs1-xSbx/InyGa1-yAs)/GaAs bilayer quantum wells (BQWs) grown by molecular beam epitaxy (MBE) were carried out. Temperature and excitation power dependent photoluminescence (PL) study indicated that the band alignment of the BQWs is type - II. The origin of the double-peak luminescence was discussed. Under optimized growth conditions, the PL emission wavelength from the BQWs has been extend up to 1.31 mu m with a single peak at room temperature.

Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31 mu m (InyGa1-yAs/GaAs1-x Sb-x)/ GaAs bilayer quantum wells

Molecular beam epitaxy (MBE) growth of (InyGa1-yAs/GaAs1-xSbx)/GaAs bilayer quantum well (BQW) structures has been investigated. It is evidenced by photo luminescence (PL) that a strong blue shift of the PL peak energy of 47 meV with increasing PL excitation power from 0.63 to 20 mW was observed, indicating type II band alignment of the BQW. The emission wavelength at room temperature from (InyGa1-yAs/GaAs1-xSbx)/GaAs BQW is longer (above 1.2 μ m) than that from InGaAs/GaAs and GaAsSb/GaAs SQW structures (1.1 μ m range), while the emission efficiency from the BQW structures is comparable to that of the SQW. Through optimizing growth conditions, we have obtained room temperature 1.31 μ m wavelength emission from the (InyGa1-yAs/GaAs1-xSbx)/GaAs BQW. Our results have proved experimentally that the GaAs-based bilayer (InyGa1-yAs/GaAs1-xSbx)/GaAs quantum well is a useful structure for the fabrication of near-infrared wavelength optoelectronic devices. © 2005 Elsevier B.V. All rights reserved.

The wave function evolution of an exciton in a bilayer system: Turning on a static in-plane electric field

The time evolution of the ground state wave function of an exciton in an ideal bilayer system is investigated within the framework of the effective-mass approximation. All of the moduli squared of the ground state wave functions evolve with time as cosine functions after an in-plane electric field is applied to the bilayer system. The variation amplitude and period of the modulus squared of the ground state wave function increase with the in-plane electric field F-r for a fixed in-plane relative coordinate r and fixed separation d between the electron and hole layers. Moreover, the variation amplitude and period of the modulus squared of the ground state wave function increase with the separation d for a fixed r and fixed in-plane electric field. Additionally, the modulus squared of the ground state wave function decreases as r increases at a given time t for fixed values of d and F-r. (c) 2007 American Institute of Physics.

The Stark effect on excitons in a bilayer system

The Stark effect on excitons in a bilayer system is investigated theoretically within the framework of the effective-mass approximation. The calculations indicate that the energy of the excitons decreases as the value of the in-plane electric field F increases at a fixed value of the distance d between the layers. However, the energy of the excitons increases with d at a fixed value of F. In particular, it increases linearly at small values of d but increases as 1/d at large values. Therefore, it can be concluded that excitons in a bilayer system have a small binding energy equal to the absolute value of the excitonic energy at large d or small F. In addition, the radiative lifetime of heavy-hole excitons in this system is calculated and is found to be short at small values of both F and d. The radiative lifetime of heavy-hole excitons in a bilayer system can be increased by two orders by an in-plane electric field of 2 kV/cm when d is twice the excitonic Rydberg. (c) 2006 American Institute of Physics.