The non-axisymmetrical configuration of a large-scale solar and stellar magnetic field

in the corona, consisting of an eruptive prominence and/or a magnetic flux region (loop or arcade, or blob) in front of the prominence. Ahead of the piston, there is a compressed flow, which produces a shock front. This high-density region corresponds to the bright feature of the transient. Behind the piston, there is a rarefaction region, which corresponds to the dark feature of the transient. Therefore, both the bright and dark features of the transient may be explained at the same time by the dynamical process of the moving piston.

Design of plasmonic back structures for efficiency enhancement of thin-film amorphous Si solar cells

Metallic back structures with one-dimensional periodic nanoridges attached to a thin-film amorphous Si (a-Si) solar cell are numerically studied. At the interfaces between a-Si and metal materials, the excitation of surface-plasmon polaritons leads to obvious absorption enhancements in a wide near-IR range for different ridge shapes and periods. The highest enhancement factor of the cell external quantum efficiency is estimated to be 3.32. The optimized structure can achieve an increase of 17.12% in the cell efficiency. (C) 2009 Optical Society of America

The mechanism of energy storage by shearing the solar magnetic field

In this paper, a complete set of MHD equations have been solved by numerical calculations in an attempt to study the dynamical evolutionary processes of the initial equilibrium configuration and to discuss the energy storage mechanism of the solar atmosphere by shearing the magnetic field. The initial equilibrium configuration with an arch bipolar potential field obtained from the numerical solution is similar to the configuration in the vicinity of typical solar flare before its eruption. From the magnetic induction equation in the set of MHD equations and dealing with the non-linear coupling effects between the flow field and magnetic field, the quantitative relationship has been derived for their dynamical evolution. Results show that plasma shear motion at the bottom of the solar atmosphere causes the magnetic field to shear; meanwhile the magnetic field energy is stored in local regions. With the increase of time the local magnetic energy increases and it may reach an order of 4×10^25 J during a day. Thus the local storage of magnetic energy is large enough to trigger a big solar flare and can be considered as the energy source of solar flares. The energy storage mechanism by shearing the magnetic field can well explain the slow changes in solar active regions.

Effects of atmosphere visibility on performances of non-line-of-sight ultraviolet communication systems

Dependence of performances of non-line-of-sight (NLOS) solar-blind ultraviolet (UV) communication systems on atmosphere visibility is investigated numerically by correlating the propagation of UV radiation with the visibility. A simplified solar-blind UV atmospheric propagation model is introduced, and the NLOS UV communication system model is constituted based on the single scattering assumption. Using the model, numerical simulation is conducted for two typical geometry configurations and different modulation formats. The results indicate that the performance of the NLOS UV communication system is insensitive to variation of visibility in quite a large range, and deteriorates significantly only in very low-visibility weather, and is also dependent on the geometry configuration of the system. The results also show that the pulse position modulation (PPM) is preferable due to its high-power efficiency to improve the system performance. (c) 2007 Elsevier GmbH. All rights reserved.

Hybrid bulk heterojunction solar cells from a blend of poly(3-hexylthiophene) and TiO2 nanotubes

Hybrid bulk heterojunction solar cells based on blend of poly(3-hexylthiophene) (P3HT) and TiO2 nanotubes or dye(N719) modified TiO2 nanotubes were processed from solution and characterized to research the nature of organic/inorganic hybrid materials. Compared with the pristine polymer P3HT and TiO2 nanoparticles/P3HT solar cells, the TiO2 nanotubes/P3HT hybrid solar cells show obvious performance improvement, due to the formation of the bulk heterojunction and charge transport improvement. A further improvement in the device performance can be achieved by modifying TiO2 nanotube surface with a standard dye N719 which can play a role in the improvement of both the light absorption and charge dissociation. Compared with the non-modified TiO2 nanotubes solar cells, the modified ones have better power conversion efficiency under 100 mW/cm(2) illumination with 500W Xenon lamp. (C) 2008 Elsevier B. V. All rights reserved.

Development of solar-blind AlGaN 128x128 ultraviolet focal plane arrays

This paper reports the development of solar-blind aluminum gallium nitride (AlGaN) 128x128 UV Focal Plane Arrays (FPAs). The back-illuminated hybrid FPA architecture consists of an 128x128 back-illuminated AlGaN PIN detector array that is bump-mounted to a matching 128x128 silicon CMOS readout integrated circuit (ROIC) chip. The 128x128 p-i-n photodiode arrays with cuton and cutoff wavelengths of 233 and 258 nm, with a sharp reduction in response to UVB (280-320 nm) light. Several examples of solar-blind images are provided. This solar-blind band FPA has much better application prospect.

Computer simulation of a-Si : H/mu c-Si : H diphasic silicon solar cells

Based on our experimental research on diphasic silicon films, the parameters such as absorption coefficient, mobility lifetime product and bandgap were estimated by means of effective-medium theory. And then computer simulation of a-Si: H/mu c-Si: H diphasic thin film solar cells was performed. It was shown that the more crystalline fraction in the diphasic silicon films, the higher short circuit density, the lower open-circuit voltage and the lower efficiency. From the spectral response, we can see that the response in long wave region was improved significantly with increasing crystalline fraction in the silicon films. Taking Lambertian back refraction into account, the diphasic silicon films with 40%-50% crystalline fraction was considered to be the best intrinsic layer for the bottom solar cell in micromorph tandem.

AMPS modeling of light J-V characteristics of a-Si based solar cells

AMPS (Analysis of microelectronic and photonic structures) mode,which was developed by Pennsylvania State University, has been used to module the light J-V characteristics of a-Si solar cells with a structure of TCO/p-a-SiC:H/i-a-Si:H/n-a-Si:H/ metal. The effects of valence band offset and contact barriers at p/i and TOC/p, n/metal interfaces on the light J-V characteristics have been examined. The modeling has qualitatively categorized and explained the non-ideal J-V behaviors (rollover, crossover, Voc shift,and rollunder) observed in a-Si based solar cells.

XPS depth profiling study of n/TCO interfaces for p-i-n amorphous silicon solar cells

Detailed X-ray photoelectron spectroscopy (XPS) depth profiling measurements were performed across the back n-layer/transparent conducting oxide (n/TCO) inter-faces for superstrate p-i-n solar cells to examine differences between amorphous silicon (a-Si:H) and microcrystalline silicon (mu c-Si:H) n-layer materials as well as TCO materials ZnO and ITO in the chemical, microstructural and diffusion properties of the back interfaces. No chemical reduction of TCO was found for all variations of n-layer/TCO interfaces. We found that n-a-Si:H interfaces better with ITO, while n-mu c-Si:H, with ZnO. A cross-comparison shows that the n-a-Si:H/ITO interface is superior to the n-mu c-Si:H/ZnO interface, as evidenced by the absence of oxygen segregation and less oxidized Si atoms observed near the interface together with much less diffusion of TCO into the n-layer. The results suggest that the n/TCO interface properties are correlated with the characteristics of both the n-layer and the TCO layer. Combined with the results reported on the device performance using similar back n/TCO contacts, we found the overall device performance may depend on both interface and bulk effects related to the back n/TCO contacts. (c) 2006 Elsevier B.V. All rights reserved.

Nanostructure in the p-layer and its impacts on amorphous silicon solar cells

The open circuit voltage (V-oc) of n-i-p type hydrogenated amorphous silicon (a-Si:H) solar cells has been examined by means of experimental and numerical modeling. The i- and p-layer limitations on V-oc are separated and the emphasis is to identify the impact of different kinds of p-layers. Hydrogenated protocrystalline, nanocrystalline and microcrystalline silicon p-layers were prepared and characterized using Raman spectroscopy, high resolution transmission electron microscopy (HRTEM), optical transmittance and activation energy of dark-conductivity. The n-i-p a-Si:H solar cells incorporated with these p-layers were comparatively investigated, which demonstrated a wide variation of V-oc from 1.042 V to 0.369 V, under identical i- and n-layer conditions. It is found that the nanocrystalline silicon (nc-Si:H) p-layer with a certain nanocrystalline volume fraction leads to a higher V-oc. The optimum p-layer material for n-i-p type a-Si:H solar cells is not found at the onset of the transition between the amorphous to mixed phases, nor is it associated with a microcrystalline material with a large grain size and a high volume fraction of crystalline phase. (c) 2006 Elsevier B.V. All rights reserved.

Hydrogenated p-type nanocrystalline silicon in amorphous silicon solar cells

A wide bandgap and highly conductive p-type hydrogenated nanocrystalline silicon (nc-Si:H) window layer was prepared with a conventional RF-PECVD system under large H dilution condition, moderate power density, high pressure and low substrate temperature. The optoelectrical and structural properties of this novel material have been investigated by Raman and UV-VIS transmission spectroscopy measurements indicating that these films are composed of nanocrystallites embedded in amorphous SiHx matrix and with a widened bandgap. The observed downshift of the optical phonon Raman spectra (514.4 cm(-1)) from crystalline Si peak (521 cm(-1)) and the widening of the bandgap indicate a quantum confinement effect from the Si nanocrystallites. By using this kind of p-layer, a-Si:H solar cells on bare stainless steel foil in nip sequence have been successfully prepared with a V c of 0.90 V, a fill factor of 0.70 and an efficiency of 9.0%, respectively. (c) 2006 Elsevier B.V. All rights reserved.

Light-induced changes in diphasic nanocrystalline silicon films and solar cells

A series of diphasic nanocrystalline silicon films and solar cells was prepared using different hydrogen dilution ratios of silane by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). It was observed that after light soaking the open circuit voltage (V-oc) of the diphasic solar cells increased, while that of amorphous silicon solar cells decreased. Raman scattering spectroscopy was performed on the series of diphasic silicon films before and after light soaking. It was found that after light soaking the nanostruclures in the diphasic nanocrystalline silicon films were changed. Both the grain sizes and grain volume fraction reduced, while the grain boundary components increased. These results provide experimental evidence for the conjecture that the light-induced increase in V-oc of the diphasic nanocrystalline solar cells might be induced by the changes in the nanostructure of the intrinsic layer. (c) 2006 Elsevier B.V. All rights reserved.

Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers

Hydrogenated nanocrystalline silicon (nc-Si:H) n-layers have been used to prepare heterojunction solar cells on flat p-type crystalline silicon (c-Si) wafers. The nc-Si:H n-layers were deposited by radio-frequency (RF) plasma enhanced chemical vapor deposition (PECVD), and characterized using Raman spectroscopy, optical transmittance and activation energy of dark-conductivity. The nc-Si:H n-layers obtained comprise fine grained nanocrystallites embedded in amorphous matrix, which have a wider bandgap and a smaller activation energy. Heterojunction solar cells incorporated with the nc-Si n-layer were fabricated using configuration of Ag (100 nm)/1T0 (80 nm)/n-nc-Si:H (15 nm)/buffer a-Si:H/p-c-Si (300 mu m)/Al (200 nm), where a very thin intrinsic a-Si:H buffer layer was used to passivate the p-c-Si surface, followed by a hydrogen plasma treatment prior to the deposition of the thin nanocrystalline layer. The results show that heterojunction solar cells subjected to these surface treatments exhibit a remarkable increase in the efficiency, up to 14.1% on an area of 2.43 cm(2). (c) 2006 Elsevier B.V. All rights reserved.

Dual-wavelength distributed feedback laser for CWDM based on non-identical quantum well

Using non-identical quantum wells as the active material, a new distributed-feed back laser is fabricated with period varied Bragg grating. The full width at half maximum of 115 nm is observed in the amplified spontaneous emission spectrum of this material, which is flatter and wider than that of the identical quantum wells. Two wavelengths of 1.51 mu m and 1.53 mu m are realized under different work conditions. The side-mode suppression ratios of both wavelengths reach 40 dB. This device can be used as the light source of coarse wavelength division multiplexer communication systems.

Color filter-less technology of LED back light for LCD-TV - art. no. 68410G

Back Light Unit (BLU) and Color Filter are the two key components for the perfect color display of Liquid Crystal Display (LCD) device. LCD can not light actively itself, so a form of illumination, Back Light Unit is needed for its display. The color filter which consists of RGB primary colors, is used to generate three basic colors for LCD display. Traditional CCFL back light source has several disadvantages, while LED back light technology makes LCD obtain quite higher display quality than the CCFL back light. LCD device based on LED back light owns promoted efficiency of display. Moreover it can generate color gamut above 100% of the NTSC specification. Especially, we put forward an idea of Color Filter-Less technology that we design a film which is patterned of red and green emitting phosphors, then make it be excited by a blue light LED panel we fabricate, for its special emitting mechanism, this film can emit RGB basic color, therefore replace the color filter of LCD device. This frame typically benefits for lighting uniformity and provide pretty high light utilization ratio. Also simplifies back light structure thus cut down the expenses.