19 resultados para BI3

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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Er/Bi codoped SiO2 thin films were prepared by sol-gel method and spin-on technology with subsequent annealing process. The bismuth silicate crystal phase appeared at low annealing temperature while vanished as annealing temperature exceeded 1000 degrees C, characterized by X-ray diffraction, and Rutherford backscattering measurements well explained the structure change of the films, which was due to the decrease of bismuth concentration. Fine structures of the Er3+-related 1.54 mu m light emission (line width less than 7 nm) at room temperature was observed by photoluminescence (PL) measurement. The PL intensity at 1.54 gm reached maximum at 800 degrees C and decreased dramatically at 1000 degrees C. The PL dependent annealing temperature was studied and suggested a clear link with bismuth silicate phase. Excitation spectrum measurements further reveal the role of Bi3+ ions for Er3+ ions near infrared light emission. Through sol-gel method and thermal treatment, Bi3+ ions can provide a perfect environment for Er3+ ion light emission by forming Er-Bi-Si-O complex. Furthermore, energy transfer from Bi3+ ions to Er3+ ions is evidenced and found to be a more efficient way for Er3+ ions near infrared emission. This makes the Bi3+ ions doped material a promising application for future erbium-doped waveguide amplifier and infrared LED

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In this paper, a serial of Bi3.4Yb0.6Ti3-xVxO12 (BYTV) thin film with different V5+ contents were deposited on Pt/Ti/SiO2/Si substrates by chemical solution deposition (CSD). The crystallized phase and electrical properties of the films were investigated using X-ray diffraction, polarization hysteresis loops, leakage current-voltage, and fatigue test. From our experimental results, it can be found that the ferroelectric properties can be improved greatly using V5+-doped in Bi3.4Yb0.6Ti3O12 (BYT) thin film, compared with the reported BYT thin film. The remanent polarization was enhanced and excellent leakage current characteristic with 10(-11)A at the bias voltage of 4V, which is much lower than the BYT thin film or some reported bismuth layer-structure ferroelectric films. Fatigue test shows that the fabricated films have good anti-fatigue characteristic after 10(10) switching cycles. (c) 2008 Published by Elsevier B.V.

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Blue emitting GdNbO4: Bi3+ powder phosphors for field emission displays were prepared by a solid state reaction. Both photoluminescence and cathodoluminescence properties of the materials were investigated. GdNbO4 itself shows only a very weak luminescence in the blue spectral region. By doping Bi3+ in GdNbO4, the luminescence intensity was improved greatly. The emission spectrum of the GdNbO4: Bi3+ consists of a broad band with maximum at 445 nm (lifetime = 0.74 mu s; CIE chromaticity coordinates: x = 0.1519 and y = 0. 1196) for both UV and low voltage (1-7 kV) cathode ray excitation. In GdNbO4:Bi3+ phosphors, the energy transfer from NbO43- to activator Bi3+ occurred.

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Bismuth (Bi)-doped and Bi/Dy co-doped chalcohalide glasses are investigated as promising materials for amplifiers in optical communication. The samples synthesized at lower melting temperatures (MTs) are characterized by more intensified infrared emissions. With respect to the redox process of a liquid mixture at different MTs, we attribute an emission at 1230 nm to low-valent Bi ions. The lower MT favors the formation of LVB ions, i.e. Bi+ or Bi2+, while the higher MT promotes the production of higher-valent Bi ions Bi3+. An enhanced broadband infrared luminescence with the full-width at half-maximum over 200 nm is achieved from the present Bi/Dy co-doped chalcohalide glasses.

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Broadband infrared luminescence covering the optical telecommunication wavelength region of 0, E and S bands was observed from bismuth-doped zinc aluminosilicate glasses and glass-ceramics. The spectroscopic properties of the glasses and glass-ceramics depend on the thermal-treatment history. With the appearance of gahnite (ZnAl2O4) crystalline phase, the fluorescent peak moves to longer wavelength, but the fluorescent intensity decreases. The similar to 1300 nm fluorescence with a FWHM larger than 250 nm and a lifetime longer than 600 mu s possesses these optical materials with potential applications in laser devices and broadband amplifiers. The broad infrared luminescence from the bismuth-doped zinc aluminosilicate glasses and glass-ceramics might be from BiO or bismuth clusters rather than from Bi5+ and Bi3+. (c) 2005 Elsevier B.V. All rights reserved.

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Glass systems of composition xBiCl(3)-(1-x)TeO2 (x=0.2, 0.4, 0.5 and 0.6, respectively) have been investigated by means of DSC, infrared absorption spectroscopy and Raman spectroscopy in order to obtain information about the transformation of structure, thermal and optical properties in the formation of the glass network. The results confirm that the addition of BiCl3 network former increases the glass forming ability and the optical transmission range. And also from Raman results a structural evolution was observed where the number of structural units described as [TeO3] trigonal pyramids, [TeO3+1] polyhedra and ionic behavior bonds (NBO) increases at the expense of the [TeO4] trigonal bipyramids. Bi3+ ions exist in network structure as [BiO6] or [BiCl6] octahedral coordination. As upconversion luminescence glass host, this glassy system is desired for optical properties but the thermal stability will still be improved. (c) 2005 Elsevier B.V. All rights reserved.

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We report on the effect of various alkaline-earth metal oxides on the broadband infrared luminescence covering 1000-1600 nm wavelength region from bismuth-doped silicate glasses. The full width at half maximum (FWHM) of the infrared luminescence and the fluorescent lifetime is more than 200 nm and 400 mu s, respectively. The fluorescent intensity decreases with increasing basicity of host glasses. Besides the broadband infrared luminescence, luminescence centered at 640 nm was also observed, which should be ascribed to Bi2+ rather than to the familiar Bi3+. We suggest that the infrared luminescence should be assigned to the X-2 (2)Pi (3/2) -> X-1 (2)Pi(1/2) transition of BiO molecules dispersed in the host glasses. (c) 2006 Elsevier Ltd. All rights reserved.

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Luminescences from bismuth-doped lime silicate glasses were investigated. Luminescences centered at about 400, 650, and 1300 nm were observed, excited at 280, 532 and 808 nm, respectively. These three luminescence bands arise from three different kinds of bismuth ions in the glasses. The visible luminescences centered at 400 and 650 nm arise from Bi3+, and Bi2+, respectively. The infrared luminescences cover the wavelength range from 1000 to 1600 nm when exited by an 808 nm laser diode. The full width at half maximum (FWHM) of the infrared luminescences is more than 205 urn. The intensity of the infrared luminescence decreases with the increment in CaO content. We suggest that the infrared luminescences might arise from Bi+. Such broadband luminescences indicate that the glasses may be potential candidate material for broadband fiber amplifiers and tunable lasers. (C) 2007 Elsevier B.V. All rights reserved.

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We report near infrared broadband emission of bismuth-doped barium-aluminum-borate glasses. The broadband emission covers 1.3 mum window in optical telecommunication systems. And it possesses wide full width at half maximum (FWHM) of similar to 200nm and long lifetime as long as 350 mus. The luminescent properties are quite sensitive to glass compositions and excitation wavelengths. Based on energy matching conditions, we suggest that the infrared emission may be ascribed to P-3(1) --> P-3(0) transition of Bi+. The broad infrared emission characteristics of this material indicate that it might be a promising candidate for broadband optical fiber amplifiers and tunable lasers. (C) 2005 Optical Society of America.

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200s800nm12001600nmFWHM200nmBi^3Bi^2emEDFAG23emFWHMEDFAG10emTi^33

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Bi4Ti3O12 (BTO) and Bi3.25In0.75Ti3O12 (BTO:In) thin films were prepared on fused quartz and LaNiO3/Si (LNO) substrates by chemical solution deposition (CSD). Their microstructures, ferroelectric and optical properties were investigated by X-ray diffraction, scanning electron microscope, ferroelectric tester and UV-visible-NIR spectrophotometer, respectively. The optical band-gaps of the films were found to be 3.64 and 3.45 eV for the BTO and BTO:In films, respectively. Optical constants (refractive indexes and extinction coefficients) were determined from the optical transmittance spectra using the envelope method. Following the single electronic oscillator model, the single oscillator energy E-0, the dispersion energy E-d, the average interband oscillator wavelength lambda(0), the average oscillator strength S-0, the refractive index dispersion parameter (E-0/S-0), the chemical bonding quantity beta, and the long wavelength refractive index n(infinity) were obtained and analyzed. Both the refractive index and extinction coefficient of the BTO:In films are smaller than those of the BTO films. Furthermore, the refractive index dispersion parameter (E-0/S-0) increases and the chemical bonding quantity beta decreases in the BTO and BTO:In films compared with those of bulk. (C) 2007 Published by Elsevier B.V.

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ABBLaSr2Mn2O7CrTiNiFeMnBCr3Mn4Cr3crNi2Fe3MnLaS2Mn2O7MnMnMnFex0.2MR28OK74LasrZMn2O7Bi3+Sr2+x0.2Bi3Bi3TcoGdn=3Laca4kMn3O10La3-3xCa13xMn3O100.5x1.0La3x0.50.7x=0.8-1.0La3Mn3Mn3+Mn4+LaxCa4-xMn3O10x0-0.9Mn4x0.2x0.2xG-AFMx0.9C-AFM

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Sr2Mg(BO3)(2) thermoluminescence (TL) phosphor was synthesized by a high temperature solid state reaction and the effect of Li+, Bi3+, Gd3+ or Ti4+ as a codopant on TL of Sr2Mg(BO3)(2) : Dy was investigated. The results show that Li+ as a codopant improves the emission intensity of high temperature TL peak of Sr2Mg(BO3)(2) : Dy phosphor whereas the addition of Bi3+, Gd3+ or Ti3+ leads to the decrease of TL intensity. The TL emission bands of Sr2Mg(BO3)(2) : Dy phosphors with Li+, Bi3+, Gd3+ or Ti4+ as a codopant are situated at 480, 579, 662 and 755 nm, which were attributed to the characteristic F-4(9/2)-> H-6(15/2), F-4(9/2)-> H-6(13/2), F-4(9/2)-> H-6(11/2) and F-4(9/2)-> H-6(9/2) transitions of Dy3+ ion, consistent with the emission of Sr2Mg(BO3)(2) : Dy phosphors. The kinetics parameters of 234 degrees C TL peak of Sr2Mg(BO3)(2) Dy-0.04(3+), (Li-0.04(+)) phosphor with the values of trap depth E=1.1 eV, frequency factor s=6.3 x 10(9) s(-1) were estimated by a peak shape method, which obey the second order kinetics.

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Sr2Mg(BO3)(2) thermoluminescence (TL) phosphor was synthesized by a high temperature solid state reaction and the effect of Li+, Bi3+, Gd3+ or Ti4+ as a codopant on TL of Sr2Mg(BO3)(2) : Dy was investigated. The results show that Li+ as a codopant improves the emission intensity of high temperature TL peak of Sr2Mg(BO3)(2) : Dy phosphor whereas the addition of Bi3+, Gd3+ or Ti3+ leads to the decrease of TL intensity. The TL emission bands of Sr2Mg(BO3)(2) : Dy phosphors with Li+, Bi3+, Gd3+ or Ti4+ as a codopant are situated at 480, 579, 662 and 755 nm, which were attributed to the characteristic F-4(9/2)-> H-6(15/2), F-4(9/2)-> H-6(13/2), F-4(9/2)-> H-6(11/2) and F-4(9/2)-> H-6(9/2) transitions of Dy3+ ion, consistent with the emission of Sr2Mg(BO3)(2) : Dy phosphors. The kinetics parameters of 234 degrees C TL peak of Sr2Mg(BO3)(2) Dy-0.04(3+), (Li-0.04(+)) phosphor with the values of trap depth E=1.1 eV, frequency factor s=6.3 x 10(9) s(-1) were estimated by a peak shape method, which obey the second order kinetics.

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Ca2Al2SiO7:Eu3+ was prepared by the sol-gel method. Through the emission spectrum of Eu3+ ion, the fluorescence parameters such as Omega(i) (i = 2,4) and radiative transition probabilities of D-5(0)-F-7(j) were calculated. The Pb2+ ion with bigger radius has an effect on the fluorescence spectra of Eu3+ which can be explained by the structure of the matrix. Simultaneously, the energy transfers between mercury-like ions (Pb2+ and Bi3+) and Eu3+ ion were observed. The D-5(4) and D-5(2) energy levels of Eu3+ are the resonance ones for Pb2+ ion.