Photoluminescence and photostimulated luminescence of BaFBr:Eu2+,Eu3+

In the photoluminescence (PL) of BaFBr:Eu2+,Eu3+, the emissions of Ea(2+), carrier electron-hole (e-h) recombination, and Eu3+ are observed, while in the photostimulated luminescence (PSL) only the emission of Eu2+ is exhibited. This disappearance of e-h recombination in PSL is considered to be caused by carrier migration during photo-stimulation. (C) 1997 American Institute of Physics.

Photostimulated luminescence of BaFBr:Eu2+ phosphors

After x-irradiation for 10 s, luminescence from BaFBr:Eu2+ phosphors by photostimulation of longer wavelength than F absorption bands was observed and assigned to the surface states or intrinsic defects of the powders. It is found that the luminescence by photostimulation into F bands can be reduced via electron migration from F centers into the surface states or intrinsic defects, thus reducing the x-ray storage or image stability. Surface passivation can lower these defects and improve the phosphors or imaging plate quality. (C) 1996 American Institute of Physics.

New color centers and photostimulated luminescence of BaFCl : Eu2+

Three new absorption bands, appearing around 670, 865 and 980 nm, are observed in BaFCl:Eu2+ phosphors. They are ascribed to F aggregates formed by association of F centers or by trapping of electrons to the primary F-n(+) (n = 2,3,4) centers. The growth curves of F and F-aggregated centers are similar and may be divided into three stages. The photostimulated luminescence (PSL) decays by stimulation into the absorption bands of F centers and of F aggregates are different; the former decay logarithmically and the latter decay hyperbolically. Some non-radiative processes related to F aggregates, such as electron migration, occur accompanying the PSL process, which may reduce the PSL efficiency and sensitivity of the phosphors. (C) 1997 Published by Elsevier Science Ltd. All rights reserved.

Electron migration in BaFCl:Eu2+ phosphors

Here we report the electron migration by photo- or thermostimulation in BaFCl:Eu2+. Electrons released from F centers may be trapped by other defect sites to form F aggregates or another type of F center and vice versa. This migration reduces the photostimulated luminescence efficiency, lowers the imaging plate sensitivity, and causes the difference between the optical absorption and photostimulation spectra of color centers. (C) 1997 American Institute of Physics.

PROCESS OF PHOTOLUMINESCENCE AND PHOTOSTIMULATED LUMINESCENCE IN BAFBR-EU PHOSPHORS

The photoluminescence (PL) and photostimulated luminescence (PSL) of BaFBr: Eu phosphors are reported. In the photoluminescence of BaFBr:Eu, the emission of Eu2+, e-h recombination and Eu3+ have been observed, while in the photostimulated luminescence only the emission of Eu2+ was observed. This phenomenon may be explained well by the suggestion of a two-hand model for the host emission in which the host emission energy may transfer to Eu2+ difference of excitation in those two processes results in different transfer rates which makes the PL and PSL emission different.

New observations on the pressure dependence of luminescence from Eu2+-doped MF2 (M = Ca, Sr, Ba) fluorides

The luminescence from Eu2+ ions in MF2 (M = Ca, Sr, Ba) fluorides has been investigated under the pressure range of 0-8 GPa. The emission band originating from the 4f(6)5d(1) -> 4f(7) transition of Eu2+ ions in CaF2 and SrF2 shows the red-shift as increasing pressure with pressure coefficients of -17 meV/GPa for CaF2 and -18 meV/GPa for SrF2. At atmospheric pressure, the emission spectrum of BaF2:Eu2+ comprises two peaks at 2.20 and 2.75 eV from the impurity trapped exciton (ITE) and the self-trapped exciton (STE), respectively. As the pressure is increased, both emission peaks shift to higher energies, and the shifting rate is slowed by the phase transition from the cubic to orthorhombic phase at 4 GPa. Due to the phase transition at 4-5 GPa pressure, the ITE emission disappears gradually, and the STE emission is gradually replaced by the 4f(6)5d(1) -> 4f(7) transition of Eu2+. Above 5 GPa, the pressure behavior of the 4f(6)5d(1) -> 4f(7) transition of EU2+ in BaF2: EU2+ is the same as the normal emission of Eu2+ in CaF2 and SrF2 phosphors.

The transition from Eu3+ to Eu2+ in SiO2(Eu) thin films prepared by ion implantation and co-sputtering

Eu ions doped SiO2 thin films, SiO2( Eu), were prepared by co-sputtering of SiO2 and Eu2O3 and Eu ion implantation into thermally grown SiO2 films. The Eu-L-3-edge X-ray absorption near edge structure (XANES) spectra of SiO2(Eu) films show a doublet absorption peak structure with energy difference of 7 eV, which indicates the conversion of Eu3+ to Eu2+ at high annealing temperature in N-2. The strong blue luminescence of SiO2(Eu) films prepared by ions implantation after films annealed above 1100 degreesC confirms the above argument.

Photoluminescence of Eu2+ doped ZnS nanocrystals

Eu2+ doped ZnS nanocrystals exhibit new luminescence properties because of the enlarged energy gap of nanocrystalline ZnS host due to quantum confinement effects. Photoluminescence emission at about 520 nm from Eu2+ doped ZnS nanocrystals at room temperature is investigated by using photoluminescence emission and excitation spectroscopy. Such green emission with long lifetime (ms) is proposed to be a result of excitation, ionization, carriers recapture and recombination via Eu2+ centers in nanocrystalline ZnS host.

Energy structure and fluorescence of Eu2+ in ZnS : Eu nanoparticles

Eu2+-doped ZnS nanoparticles with an average size of around 3 nm were prepared, and an emission band around 530 nm was observed. By heating in air at 150 degrees C, this emission decreased, while the typical sharp line emission of Eu3+ increased. This suggests that the emission around 530 nm is from intraion transition of Eu2+: In bulk ZnS:Eu2+, no intraion transition of Eu2+ was observed because the excited states of Eu2+ are degenerate with the continuum of the ZnS conduction band. We show that the band gap in ZnS:Eu2+ nanoparticles opens up due to quantum confinement, such that the conduction band of ZnS is higher than the first excited state of Eu2+, thus enabling the intraion transition of Eu2+ to occur.