Bulk modulus of ternary chalcopyrite A(I)B(III)C(2)(VI) and A(II)B(IV)C(2)(V) semiconductors

Based on the complex crystal chemical bond theory, the formula of Liu and Cohen's, which is only suitable for one type of bond, has been extended to calculate the bulk modulus of ternary chalcopyrite A(I)B(III)C(2)(VI) and A(II)B(IV)C(2)(V) which contains two types of bonds. The calculated results are in fair agreement with the previous theoretical values reported and experimental values. (C) 1998 Elsevier Science Ltd. All rights reserved.

[PMMA-b-PAN］-Fe络合物制备有机一无机杂化薄膜

本论文通过聚甲基丙烯酸甲酯-b-聚丙烯睛嵌段共聚物同铁（III）离子络合物（［PMMA-b-PAN］-Fe）制备有机一无机杂化薄膜，并利用妨M对薄膜的表面形态进行了表征。结果表明，通过控制［PMMA-b-PAN］-Fe络合物溶液热处理时间（T=120℃）及络合物溶液中精基同铁＜III）离子的摩尔比率，可以得到不同表面形态的有机一无机杂化薄膜。并借助抑S对［PMMA-b-PAN〕-Fe络合物配位作用进行了研究，发现铁（III）离子与PMMA-b-PAN嵌段共聚物中的睛基配位。此外，对掺杂有FeSO4·7H2O 的均聚甲基丙烯酸甲酷（PMMA）溶液、均聚丙烯睛(PAN)溶液和FeSO4·7H2O（溶解在DMF中）溶液经不同时间热处理（T=120℃）后的薄膜表面形态进行了研究，结果发现，掺杂有FeSO4·7H2O 的PMMA 溶液经20in热处理后，薄膜的表面形态与FeS04·7H2O。溶液经20in热处理后薄膜的表面形态基本相同，而掺杂有FesO4·7H2O的PAN溶液经不同时间热处理后，薄膜的表面形态没有明显的变化。与此同时，对匡[PMMA-b-PAN]-Fe络合物高温热解制备碳材料进行了初步的研究，研究结果表明，利用PMMA-b-PAN］-e杂化薄膜炭化制备具有纳米尺寸孔洞的碳薄膜是可能的，但控制好热解条件至关重要。

Luminescent Boron-Contained Ladder-Type pi-Conjugated Compounds

Four diboron-contained ladder-type pi-conjugated compounds 1-4 were designed and synthesized. Their thermal, photophysical, electrochemical properties, as well as density functional theory calculations, were fully investigated. The single crystals of compounds 1 and 3 were grown, and their crystal structures were determined by X-ray diffraction analysis. Both compounds have a ladder-type g-conjugated framework. Compounds I and 2 possess high thermal stabilities, moderate solid-state fluorescence quantum yields, as well as stable redox properties, indicating that they are possible candidates for emitters and charge-transporting materials in electroluminescent (EL) devices. The double-layer device with the configuration of [ITO/NPB (40 nm)/1 or 2 (70 nm)/LiF (0.5 nm)/Al (200 nm)] exhibited good EL performance with the maximum brightness exceeding 8000 cd/m(2).

SYNTHESES AND CRYSTAL STRUCTURES OF THE COMPLEXES OF RARE EARTH WITH FUMARIC ACID

Six compounds of M2F3 center dot 1.2H(2)O (M=EU, Ga, Tb, Y, Er, LU: H2F=Fumaric acid) have been synthesized. The structures of Eu(III), T b(III), Y(III), Er(III) and Lu(III) compounds have been determined by singal crystal X-ray diffraction method. The complex of Eu(III) crystallizes in tri-clinic space group P (1) over bar, and the coordination number of Eu3+ is ten. The other four complexes crystallize in monclinic space P2(1)/c, and the coordination numbers of the metal ions are eight. Each of the complexes shows a three-dimensional net structures.

Influence of V/III ratio on the structural and photoluminescence properties of In0.52AlAs/In0.53GaAs metamorphic high electron mobility transistor grown by molecular beam epitaxy

A series of metamorphic high electron mobility transistors (MMHEMTs) with different V/III flux ratios are grown on GaAs (001) substrates by molecular beam epitaxy (XIBE). The samples are analysed by using atomic force microscopy (AFM), Hall measurement, and low temperature photoluminescence (PL). The optimum V/III ratio in a range from 15 to 60 for the growth of MMHEMTs is found to be around 40. At this ratio, the root mean square (RMS) roughness of the material is only 2.02 nm; a room-temperature mobility and a sheet electron density are obtained to be 10610.0cm(2)/(V.s) and 3.26 x 10(12)cm(-2) respectively. These results are equivalent to those obtained for the same structure grown on InP substrate. There are two peaks in the PL spectrum of the structure, corresponding to two sub-energy levels of the In0.53Ga0.47 As quantum well. It is found that the photoluminescence intensities of the two peaks vary with the V/III ratio, for which the reasons are discussed.

Effects of V/III ratio on InGaAs and InP grown at low temperature by LP-MOCVD

Effects of V/III ratio on heavily Si doped InGaAs and InP were studied using low pressure metalorganic chemical vapor deposition (LP-MOCVD) at a growth temperature of 550degreesC. In InGaAs, as the V/III ratio decreases from 256 to 64, the carrier concentration increases from 3.0 x 10(18) to 5.8 x 10(18) cm(-3), and the lattice mismatch of InGaAs to InP was observed to vary from -5.70 x10(-4) to 1.49 x 10(-3). In InP, when the V/III ratio decreases from 230 to 92, the same trend as that in Si doped InGaAs was observed that the carrier concentration increases from 9.2 x 10(18) to 1.3 x 10(19) cm(-3). The change of AsH3 was found to have stronger effect on Si incorporation in InGaAs at lower growth temperature than at higher growth temperature. (C) 2003 Elsevier B.V. All rights reserved.

Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices

This paper reviews our work on controlled growth of self-assembled semiconductor nanostructures, and their application in light-emission devices. High-power, long-life quantum dots (QD) lasers emitting at similar to 1 mu m, red-emitting QD lasers, and long-wavelength QD lasers on GaAs substrates have successfully been achieved by optimizing the growth conditions of QDs.

Chemical trends of defect formation in Si quantum dots: The case of group-III and group-V dopants

Using first-principles methods, we have systematically calculated the defect formation energies and transition energy levels of group-III and group-V impurities doped in H passivated Si quantum dots (QDs) as functions of the QD size. The general chemical trends found in the QDs are similar to that found in bulk Si. We show that defect formation energy and transition energy level increase when the size of the QD decreases; thus, doping in small Si QDs becomes more difficult. B-Si has the lowest acceptor transition energy level, and it is more stable near the surface than at the center of the H passivated Si QD. On the other hand, P-Si has the smallest donor ionization energy, and it prefers to stay at the interior of the H passivated Si QD. We explained the general chemical trends and the dependence on the QD size in terms of the atomic chemical potentials and quantum confinement effects.

The influence of V/III ratio in the initial growth stage on the properties of GaN epilayer deposited on low temperature AlN buffer layer

The V/III ratio in the initial growth stage of metalorganic chemical vapor deposition has an important influence on the quality of a GaN epilayer grown on a low-temperature AIN buffer layer and c-plane sapphire substrate. A weaker yellow luminescence, a narrower half-width of the X-ray diffraction peak, and a higher electron mobility result when a lower V/III ratio is taken. The intensity of in situ optical reflectivity measurements indicates that the film surface is rougher at the beginning of GaN growth, and a longer time is needed for the islands to coalesce and for a quasi-two dimensional mode growth to start. A comparison of front- and back-illuminated photoluminescence spectra confirms that many threading dislocations are bent during the initial stage, leading to a better structural quality of the GaN layer. (C) 2007 Elsevier B.V. All rights reserved.

High-resolution X-ray diffraction analysis of the Bragg peak integrated intensity in highly mismatched III-N epilayers

A new method of measuring the thickness of GaN epilayers on sapphire (0 0 0 1) substrates by using double crystal X-ray diffraction was proposed. The ratio of the integrated intensity between the GaN epilayer and the sapphire substrate showed a linear relationship with the GaN epilayer thickness up to 2.12 mum. It is practical and convenient to measure the GaN epilayer thickness using this ratio, and can mostly eliminate the effect of the reabsorption, the extinction and other scattering factors of the GaN epilayers. (C) 2003 Elsevier Science B.V. All rights reserved.

Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices

Various techniques on the growth of self-assembled compound semiconductor nano-structures (quantum dots, QDs) have been tried to enhance the controlling on size, density, emitting wavelength, uniformity in size and ordering in location of the QDs. Optimized growth conditions have been used in the application of the QD materials in opto-electronic devices. High-power long-lifetime quantum-dot laser-diodes (QD-LDs) emitting near 1 mu m, QD-LDs emitting in red-light range, 1.3 mu m QD-LDs on GaAs substrate and quantum-dot super-luminescent diodes (QD-SLDs) have successfully been achieved.

稀土及过渡金属离子Fe(III)、Zn(II)、Cd(II）的协同萃取研究

自从1956年Blake等研究HDEHP萃取铀时发现协同效应以来，由于协同萃取具有可以显著地提高萃取效率，改变萃取选择性等优点，所以对协同萃取进行了大量研究工作，目前已广泛应用于核燃料稀有金属湿法冶金分离分析。但协同萃取研究领域十分广阔，新协萃体系，协萃机理和协萃配合物结构等许多方面还有待进一步研究。Fe~(3+)、Zn~(2+)和Cd~(2+)等过渡金属离子常与稀土离子在一起，成为高纯稀土产品的重要杂质元素，因此寻找Fe(III)、Zn(II)和Cd(II)与RE（III）的新协同萃取分离体系，不但具有理论意义，也有实际意义。本文研究了萃取分离中广泛使用的四种萑取剂，甲基膦酸二（1-甲基庚基）酯（P_(350), 以B表示）、仲碳伯胺N_(1923)(以RNH_2表示）、1-苯基-3-甲基-4-苯甲酰基吡唑酮-5（PMBP，以HL表示）和2-乙基基膦酸单（2-乙基已基）酯（P_(507)，以HA表示）对盐酸介质中Fe(III)、Zn(II)、Cd(II)和Nd(III)等金属离子的协同萃取，得到了六个新协萃体系，并且对协萃机理和萃取平稀奇规律等进行了研究，得到了一些有意义的结果。

INTERVALLEY GAMMA-CHI DEFORMATION POTENTIALS IN III-V ZINCBLENDE SEMICONDUCTORS BY ABINITIO PSEUDOPOTENTIAL CALCULATIONS

Intervalley GAMMA-X deformation-potential constants (IVDP's) have been calculated by use of a first-principles pseudopotential method for the III-V zinc-blende semiconductors AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, and InSb. When the calculated IVDP's of LA phonons for GaP, InP, and InAs and of LO phonons for AlAs, AlSb, GaAs, GaSb, and InSb are compared with results of a previous calculation that used the empirical pseudopotential method (EPM) and a rigid-ion approximation, good agreement is found. However, our ab initio pseudopotential results on IVDP's of LA phonons for AlAs, AlSb, GaAs, GaSb, and InSb and of LO phonons for GaP, InP, and InAs are about one order of magnitude smaller than those obtained by use of EPM calculations, indicating that the electron redistribution accompanying crystal-lattice deformation has a significant effect on GAMMA-X intervalley scattering for these phonon modes when the anions are being displaced. In our calculations the LA- and LO-phonon modes at the X point have been evaluated in the frozen-phonon approximation. We have also obtained the LAX- and LOX-phonon frequencies for these materials from total-energy calculations, which agree very well with experimental values for these semiconductors. We have also calculated GAMMA-X hole-phonon scattering matrix elements for the top valence bands in these nine semiconductors, from which the GAMMA-X IVDP's of the top valence bands for the longitudinal phonons and transverse phonons are evaluated, respectively.