High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T

Patterning sapphire substrate can relax the stress in the nitride epilayer, reduce the threading dislocation density, and significantly improve device performance. In this article, a wet-etching method for sapphire substrate is developed. The effect of substrate surface topographies on the quality of the GaN epilayers and corresponding device performance are investigated. The GaN epilayers grown on the wet-patterned sapphire substrates by MOCVD are characterized by means of scanning electrical microscopy (SEM), atomic force microscopy (AFM), high-resolution x-ray diffraction (HRXRD), and photoluminescence (PL) techniques. In comparison with the planar sapphire substrate, about a 22% increase in device performance with light output power of 13.31 mW@20mA is measured for the InGaN/GaN blue LEDs grown on the wet-patterned sapphire substrate.

Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generation - art. no. 60200O

A novel device of tandem multiple quantum wells (MQWs) electroabsorption modulators (EAMs) monolithically integrated with DFB laser is fabricated by ultra-low-pressure (22 mbar) selective area guowth (SAG) MOCVD technique. Experimental results exhibit superior device characteristics with low threshold of 19 mX output light power of 4.5 mW and over 20 dB extinction ratio when coupled into a single mode Fiber. Moreover, over 10 GHz modulation bandwidth is developed with a driving voltage of 2 V. Using I this sinusoidal voltage driven integrated device, 10GHz repetition rate pulse with a width of 13.7 ps without any compression elements is obtained.

Zn_4B_6O_(13)∶Ce~(3+),Tb~(3+)的合成与发光

高温固相扩散方法首次合成了Zn4 B6 O1 3:Ce3+ ,Tb3+ 光致发光材料。通过XRD分析获得晶胞参数 :a =0 7472nm ,V =0 .4172nm3,为立方晶系。研究Ce3+ 和Ce3+ ,Tb3+ 在Zn4 B6 O1 3中的激发和发射光谱 ,发现Ce3+ 在Zn4 B6 O1 3中的激发和发射带比Ce3+ 在其他基质中红移2 3 8～ 4.94KK ,Ce3+ 的发射带与Tb3+ 的 7F6 → 5G2 ,5D1 ,5H7吸收带有很好的重叠 ,使Ce3+ 对Tb3+ 有良好的敏化作用。Ce3+ ,Tb3+ 在基质中的能量传递机理为 :Ce3+ →Ce3+ 和Ce3+ →Tb3+ 之间的偶极子—偶极子的电多级相互作用的共振传递机理。色坐标为 :x =0 2 81,y =0 .619。SEM摄取产物的晶貌 ,颗粒均匀 ,平均粒度为 0 .2 3 μm ,接近纳米级。

H-1 and C-13 NMR studies of TTHA complexes with diamagnetic rare earth ions

TTHA complexes with diamagnetic rare earth ions (La3+, Y3+ and LU(3+)) were studied by H-1 and C-13 NMR spectroscopy. A symmetric structural model was suggested for La(TTHA) complex and an asymmetric model for Y(TTHA) and Lu(TTHA) complexes. The complex formation was dependent on the pH value of the solution. The interactions of La(TTHA) with the additional metal ions (La3+, Y3+ and Ca2+) were relatively weak, but relatively strong for that of Lu(TTHA) with the additional Lu3+.

A new topological index for the Changchun institute of applied chemistry C-13 NMR information system

A method to assign a single number representation for each atom (node) in a molecular graph, Atomic IDentification (AID) number, is proposed based on the counts of weighted paths terminated on that atom. Then, a new topological index, Molecular IDentification (MID) number is developed from AID. The MID is tested systematically, over half a million of structures are examined, and MID shows high discrimination for various structural isomers. Thus it can be used for documentation in the Changchun Institute of Chemistry C-13 NMR information system.

掺Ce~（3＋）、Gd~（3＋）、Tb~（3＋）的CaLaB_7O_（13）的光

采用固相反应法合成了接Ｃｅ３＋、Ｇｄ３＋、Ｔｂ３＋的ＣａＬａＢ７Ｏ１３，并测定了它们的光谱．在Ｃｅ３＋的光谱中发现文献中尚未报导的３１７ｎｍ激发峰和２９３ｎｍ发射峰．２９３发射属于不常见的５ｄ能带中次最低能级向基态的跃迁，并随着Ｃｅ３＋离子浓度增加而变弱，当掺杂浓度大于０．１ｍｏｌ时，２９３ｎｍ发射峰消失.

聚丙烯腈热裂解产物的ESR和固体￣（13）CNMR研究

用电子自旋共振（ＥＳＲ）和固体￣（１３）ＣＮＭＲ研究了聚丙烯腈（ＰＡＮ）在不同裂解温度（Ｔ＿Ｐ）下的结构变化，当Ｔ＿Ｐ从２５０℃增加到６００℃，ＥＳＲ信号线形没有变化，ｇ值与Ｔ＿Ｐ无关，ΔＨ＿（ＰＰ）减小，自旋浓度（Ｎ＿Ｓ）开始增加，Ｔ＿Ｐ进一步升高，Ｎ＿Ｓ又减少．￣（１３）ＣＮＭＲ谱指出在不同Ｔ＿Ｐ下谱峰发生很大变化，与另文报道的红外及Ｘ－射经衍射结果一致，随Ｔ＿Ｐ升高，ＰＡＮ逐渐脱去小分子形成具有环化共轭结构的产物．