Synthesis and properties of A-type zeolite membranes by secondary growth method with vacuum seeding

A-type zeolite membranes were successfully synthesized on tubular alpha-Al2O3 supports by secondary growth method with vacuum seeding In the seeding process, a thin, uniform and continuous seeding layer was closely attached to the support surface by the pressure difference between the two sides of the support wall. The effects of seed particle size, suspension concentration, coating pressure difference and coating time on the membrane and its pervaporation properties were investigated. The as-synthesized membranes were characterized by XRD and SEM. The quality of the membranes was evaluated by the pervaporation dehydration of 95 wt. % isopropanol/water mixture at 343 K. High quality A-type zeolite membranes can be reproducibly prepared by the secondary growth method with vacuum seeding under the conditions: seed particle size of 500-1200 nm, suspension concentration of 4-8 g/l, coating pressure difference of 0.0100-0.0250 MPa and coating time of 45-180 s. (C) 2004 Elsevier B.V. All rights reserved.

Enlarged area A-type zeolite membranes prepared by vacuum seeding method

High quality A-type zeolite membranes, with enlarged area over 70 cm(2), were successfully synthesized on a tubular alpha-Al2O3 support by applying the vacuum seeding method.

华北克拉通孔玆岩系中石榴子石花岗岩的成因：熔体与残留相混合机制的研究

The most widespread rock associations in the Western Block of North China Craton are khondalites distributed mainly in Jining, Liangcheng and Datong. A large quantitiy of garnet-bearing granites are contained in the khondalites. A great deal of research has been carried out on them by previous researchers. Studies of these garnet-bearing granites consist essentially of structural characteristics, petrography and geochemistry, and finally geochronological determinations. Summing up these researches, it will not be difficult to see that all of these authors have regarded these large numbers of garnets (up to 20%) contained in granites as crystallized products from magmas, but they have not proved this from petrological perspective. Theoretically, there are possibly three kinds of petrogenesis as to these garnets. The first one is that they have been transferred to the granites from khondalites by melt when anatexis happened to khondalites, and they, in essence, are residual metamorphic garnets; The second one is that when the khondalites were being melted, these garnets were produced from biotite dehydration melting, and the newly formed garnets intruded together with the melt and eventually molded the garnet-bearing granites. Garnets of this possible kind either showed independent crystals, or garnets from khondalites took place secondary growth under favorable temperature and pressure conditions for their crystallization; The last possibility is that these garnets were crystallized from magmas in which suitable pressure, temperature and composition were available. These garnets, generally, should be fine-grained. The aim of this study is, through examining the mineral chemistry of the garnets and the whole rock chemistry, to ascertain under which kind of mechanism, in the world, did these garnets form? Besides, we try to calculate the temperatures under which khondalites began melting and reactions of the garnets and the cooled melts happened by garnet-biotite thermometry. The whole rock chemistry analyses of the garnet-bearing granites tell us that all the samples are strongly peraluminous (A/CNK greater than 1.1) on the A/NK vs. A/CNK plot. On the SiO2-K2O plot, the granites are mainly constrained to be high-K calc-alkaline and calc-alkaline series, consistent with previous researches. On the ACF（（Al2O3-Na2O-K2O）-FeO(T)-CaO） discrimination plot, all the six garnet-bearing granite samples drop into the area of S-type granites. The relationship between CaO/Na2O and SiO2 shows that the overwhelming majority of garnet-bearing granites have a CaO/Na2O value over 0.3, revealing that they probably come from metagreywacke precursors or mediate-felsic orthogeneisses compositionally similar to them. Detailed EPMA analyses conducted on the garnets contained in the garnet-bearing granites show that all the garnets are dominated by almandine and pyrope, which occupy 92-96% (Weight Percentage) of each garnet analyzed, typical of granulite facies. Their chemical composition is entirely different from those crystallized in magmas, but extremely similar to those of typical granulite facies metapelites in khondalites and typical granulites, indicating all the garnets to be metamorphogenic. In addition, REEs distribution patterns of the garnets are totally different from typical biotite granites and peraluminous granites. In other words, both LREE and HREE of our garnets are evidently lower than those from these two kinds of rocks. Moreover, compared to the REE pattern of the garnets from typical amphibolites, LREE content of our garnets is obviously higher and HREE content is a little lower. However, REE patterns of our garnets are completely in harmony with those of garnets from typical granulites. So, the REE patterns of garnets, again, prove that all the garnets we studied are metamorphogenic. Biotites appear in two forms, being as inclusions in the garnet and as selvages immediately adjacent to the garnet, respectively. Two reactions and their corresponding temperatures, with the help of petrography and Garnet-Biotite geothermometers, could be obtained, which are Bt+ Pl+ Qtz→Kfs+ Opx+ Grt+ melt as positive reaction and Kfs+ Grt+ melt→Bt+ Pl+ Qtz as reverse reaction, respectively. Summing up the discussion above, we declare that the garnet-bearing granites distributed in the Western Block of North China Craton are the mixture of melts and restites resulted from biotite dehydration melting. The garnets contained in the restites are the products from biotite dehydration melting and restites from the khondalites, respectively.

Effect of buffer layer growth conditions on the secondary hexagonal phase content in cubic GaN films on GaAs(001) substrates

In this letter, we investigated the effect of the buffer layer growth conditions on the secondary hexagonal phase content in cubic GaN films on GaAs(0 0 1) substrate. The reflection high-energy electron diffraction (RHEED) pattern of the low-temperature GaN buffer layers shows that both the deposition temperature and time are important in obtaining a smooth surface. Four-circle X-ray double-crystal diffraction (XRDCD) reciprocal space mapping was used to study the hexagonal phase inclusions in the cubic GaN (c-GaN) films grown on the buffer layers. The calculation of the volume contents of the hexagonal phase shows that higher temperature and longer time deposition of the buffer layer is not preferable for growing pure c-GaN film. Under optimized condition, 47 meV FWHM of near band gap emission of the c-GaN film was achieved. (C) 2000 Elsevier Science B.V. All rights reserved.

Influence of secondary void damage in the matrix material around voids

The mechanism of ductile damage caused by secondary void damage in the matrix around primary voids is studied by large strain, finite element analysis. A cylinder embedding an initially spherical void, a plane stress cell with a circular void and plane strain cell with a cylindrical or a flat void are analysed under different loading conditions. Secondary voids of smaller scale size nucleate in the strain hardening matrix, according to the requirements of some stress/strain criteria. Their growth and coalescence, handled by the empty element technique, demonstrate distinct mechanisms of damage as circumstances change. The macroscopic stress-strain curves are decomposed and illustrated in the form of the deviatoric and the volumetric parts. Concerning the stress response and the void growth prediction, comparisons are made between the present numerical results and those of previous authors. It is shown that loading condition, void growth history and void shape effect incorporated with the interaction between two generations of voids should be accounted for besides the void volume fraction.

Transport-determined early growth and development of jack mackerel Trachurus japonicus juveniles immigrating into Sagami Bay, Japan

Oceanographic conditions and transport processes are often critical factors that affect the early growth, survival and recruitment of marine fishes. Sagittal otoliths were analysed to determine age and early growth for 381 jack mackerel (Trachurus japonicus) juveniles from Sagami Bay on the Pacific coast of Japan. Two separate hatching periods ( December and February-March) were identified. They originated from the spawning grounds in the East China Sea. Early growth and developmental rates of December-hatching fish were lower than those for February-March-hatching fish. It is likely that these differences were determined in the Kuroshio Current during transport from the spawning grounds to Sagami Bay, and the lower December water temperatures in the bay. Origin and hatch dates of juveniles in Sagami Bay were in contrast to previous research on Fukawa Bay, where April-or-later-hatching fish from spawning grounds in the coastal waters of southern Japan constituted about half of the juvenile population. Management of these two jack mackerel stocks needs to consider these differences in hatch date composition and spawning origins, as these differences could affect early growth and subsequent mortality.

Age, growth, and reproduction of the bitterling (Paracheilognathus imberbis) in a shallow Chinese Lake

Age, growth, and reproduction of the bitterling, Paracheilognathus imberbis (Gunther), in Niushan Lake were studied between 1998 and 1999. Annuli on the scales were clear and could be used as valid indicators of age. The population of the fish comprised only one age group. The growth rate of males was markedly greater than that of females. The fish were multiple spawners, reaching maturity in the second year. Minimum size for males at maturity was 32.9 mm in total length and 0.30 g in weight; for females, the minima were 41.0 mm and 0.73 g. During the breeding season, both sexes exhibited secondary sex characteristics, and the ratio of males to females was 1: 1.04 (n = 104). The size of mature eggs averaged 3.12 mm in length by 1.03 mm. in width. Fecundity per female for one age group ranged from 38 to 189 eggs, with an average of 93 eggs (n = 80).

Anomalous-circular photogalvanic effect in a GaAs/AlGaAs two-dimensional electron gas

We have studied the circular photogalvanic effect (CPGE) in a GaAs/AlGaAs two-dimensional electron gas excited by near infrared light at room temperature. The anomalous CPGE observed under normal incidence indicates a swirling current which is realized by a radial spin current via the reciprocal spin-Hall effect. The anomalous CPGE exhibits a cubic cosine dependence on the incidence angle, which is discussed in line with the above interpretation.

Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation method

We propose an innovative technique, making use of the In segregation effect, referred as the N irradiation method, to enhance In-N bonding and extend the emission wavelength of GaInNAs quantum wells (QWs). After the formation of a complete In floating layer, the growth is interrupted and N irradiation is initiated. The majority of N atoms are forced to bond with In atoms and their incorporation is regulated independently by the N exposure time and the As pressure. The effect of the N exposure time and As pressure on the N incorporation and the optical quality of GaInNAs QWs were investigated. Anomalous photoluminescence (PL) wavelength red shifts after rapid thermal annealing (RTA) were observed in the N-irradiated samples, whereas a normal GaInNAs sample revealed a blue shift. This method provides an alternative way to extend the emission wavelength of GaInNAs QWs with decent optical quality. We demonstrate light emission at 1546 nm from an 11-nm-thick QW, using this method and the PL intensity is similar to that of a 7-nm-thick GaInNAs QW grown at a reduced rate. (C) 2008 Elsevier B.V. All rights reserved.

Anomalous coarsening of self-assembled InAs quantum dots on vicinal GaAs (100) substrates

The formation process of InAs quantum dots (QDs) on vicinal GaAs (1 0 0) substrates is studied by atomic force microscopy (AFM). It is found that after 1.2 MLs of InAs deposition, while the QDs with diameters less than the width of the multi-atomic steps are shrinking, the larger QDs are growing. Photoluminescence measurements of the uncapped QDs correspond well to the AFM structure observations of the QDs. We propose that the QDs undergo an anomalous coarsening process with modified growth kinetics resulting from the restrictions of the finite terrace sizes. A comparison between the QDs on the vicinal GaAs (1 0 0) substrates and the QDs on the exact GaAs (1 0 0) further verifies the effect of the multi-atomic steps on the formation of QDs.

Growth of crack-free GaN films on Si(111) substrate by using Al-rich AlN buffer layer

GaN epilayers were grown on Si(111) substrate by metalorganic chemical vapor deposition. By using the Al-rich AlN buffer which contains Al beyond stoichiometry, crack-free GaN epilayers with 1 mum thickness were obtained. Through x-ray diffraction (XRD) and secondary ion mass spectroscopy analyses, it was found that a lot of Al atoms have diffused into the under part of the GaN epilayer from the Al-rich AlN buffer, which results in the formation of an AlxGa1-xN layer at least with 300 nm thickness in the 1 mum thick GaN epilayer. The Al fraction x was estimated by XRD to be about 2.5%. X-ray photoelectron spectroscopy depth analysis was also applied to investigate the stoichiometry in the Al-rich buffer before GaN growth. It is suggested that the underlayer AlxGa1-xN originated from Al diffusion probably provides a compressive stress to the upper part of the GaN epilayer, which counterbalances a part of tensile stress in the GaN epilayer during cooling down and consequently reduces the cracks of the film effectively. The method using the Al diffusion effect to form a thick AlGaN layer is really feasible to achieve the crack-free GaN films and obtain a high crystal quality simultaneously. (C) 2004 American Institute of Physics.

Anomalous temperature dependence of photoluminescence from stoichiometric GD(2)O(3-x) film

A stoichiometric Gd2O3-x thin film has been grown on a silicon (10 0) substrate with a low-energy dual ion-beam epitaxial technique. Gd2O3-x shares Gd2O3 structures although there are many oxygen deficiencies in the film. The photoluminescence (PL) measurements have been performed in a temperature range 5-300 K. The detailed characters of the peak position, the full-width at half-maximum (FWHM) and the peak intensity at different temperature were reported. An anomalous intensity behavior of the PL spectra has been observed, which is similar to that of some other materials such as porous silicon and silicon nanocrystals in silicon dioxide. Therefore, we suggest that the nanoclusters with the oxygen deficiencies contribute to the PL emission and employ the model of singlet-triplet exchange splitting of exciton to discuss the four peaks observed in the experiment. (C) 2003 Elsevier B.V. All rights reserved.

Growth of a novel periodic structure of SiC/AlN multilayers by low pressure chemical vapour deposition

A novel 10-period SiC/AlN multilayered structure with a SiC cap layer is prepared by low pressure chemical vapour deposition (LPCVD). The structure with total film thickness of about 1.45 mu m is deposited on a Si (111) substrate and shows good surface morphology with a smaller rms surface roughness of 5.3 nm. According to the secondary ion mass spectroscopy results, good interface of the 10 period SiC/AlN structure and periodic changes of depth profiles of C, Si, Al, N components are obtained by controlling the growth procedure. The structure exhibits the peak reflectivity close to 30% near the wavelength of 322 nm. To the best of our knowledge, this is the first report of growth of the SiC/AlN periodic structure using the home-made LPCVD system.

Growth and properties of magnetron cosputtering grown Mn(x)Ge(1-x)on Si(001)

We have grown MnxGe1-x films (x=0, 0.06, 0.1) on Si (001) substrates by magnetron cosputtering, and have explored the resulting structural, morphological, electrical and magnetic properties. X-ray diffraction results show there is no secondary phase except Ge in the Mn0.06Ge0.94 film while new phase appears in the Mn0.1Ge0.9 film. Nanocrystals are formed in the Mn0.06Ge0.94 film, determined by field-emission scanning electron microscopy. Hall measurement indicates that the Mn0.06Ge0.94 film is p-type semiconductor and hole carrier concentration is 6.07 X 10(19) cm(-3) while the MnxGe1-x films with x=0 has n-type carriers. The field dependence of magnetization was measured using alternating gradient magnetometer, and it has been indicated that the Mn0.06Ge0.94 film is ferromagnetic at room temperature. (c) 2005 Elsevier Ltd. All rights reserved.

Growth of SiGe heterojunction bipolar transistor using Si2H6 gas and Ge solid sources molecular beam epitaxy

N-p-n Si/SiGe/Si heterostructure has been grown by a disilane (Si2H6) gas and Ge solid sources molecular beam epitaxy system using phosphine (PH3) and diborane (B2H6) as n- and p-type in situ doping sources, respectively. X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS) measurements show that the grown heterostructure has a good quality, the boron doping is confined to the SiGe base layer, and the Ge has a trapezoidal profile. Postgrowth P implantation was performed to prepare a good ohmic contact to the emitter. Heterojunction bipolar transistor (HBT) has been fabricated using the grown heterostructure and a common-emitter current gain of 75 and a cut-off frequency of 20 GHz at 300 K have been obtained. (C) 2001 Elsevier Science B.V. All rights reserved.