40 resultados para Aluminium hydroxide

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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In the present work, two kinds of CPVC carboxylated ionic copolymers were prepared by a new method. First, a graft copolymer (CPVC-cg-AA) comprising of polyacrylic acid (PAA) as branched chains and chlorinated polyvinyl chloride (CPVC) as backbone was synthesized by in-situ chlorinating graft copolymerization (ISCGC). Second, the acid groups of the graft copolymer were neutralized by sodium hydroxide and aluminium hydroxide, respectively in order to prepare carboxylated ionic copolymers.

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In this study, a carboxymethyl cellulose (CMC)-mediated sol-gel process was developed to synthesize the alumina hydoxide whiskers. During the process, inexpensive inorganic salts were used as precursors and supercritical drying method was used to extract the water in hydrogel. The influences of CMC on the gel formation and the particle morphology were investigated. The results show that the formation of CMC-aluminium hydroxide organic-inorganic hybridgels led to a morphology transcription process from CMC micelles to aluminium hydroxide gel, as a result, the precursor with whiskerious morphology was obtained.

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Lateral stress of LY-12 alummium alloy under plate impact shock loading was measured. Based on the measured data, the Hugoniot relation and shear strength were obtained. The result has demonstrated that the shear strenath of the tested material increases remarkably with the increasing longitudinal stress. This means that the assumption of constant shear strength usually adopted in shock stress calculation is not suitable for the present material.

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The effect of thermal exposure on the tensile properties of aluminium borate whisker reinforced 6061 aluminium alloy composite was studied. The interfacial reaction was investigated by TEM and the mechanical properties were studied using tensile tests. The results indicated that the interfacial reaction had an influence on the mechanical properties of the composite, so that the maxima of Young’s modulus and ultimate tensile strength of the composite after exposure at 500?C for 10 h were obtained for the optimum degree of interfacial reaction. The yield strength,however, was not only affected by the interfacial state but also by many other factors.

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A new X-ray diffraction method for characterising thermal mismatch stress (TMS) in SiCw–Al composite has been developed. The TMS and thermal mismatch strain (TMSN) in SiC whiskers are considered to be axis symmetrical, and can be calculated by measuring the lattice distortion of the whiskers. Not only the average TMS in whiskers and matrix can be obtained, but the TMS components along longitudinal and radial directions in the SiC whiskers can also be deduced. Experimental results indicate that the TMS in SiC whiskers is compressive, and tensile in the aluminium matrix. The TMS and TMSN components along the longitudinal direction in the SiC whiskers are greater than those along the radial direction for a SiCw–Al composite quenched at 500°C.

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On the basis of the pseudopotential plane-wave (PP-PW) method in combination with the local density functional theory (LDFT), complete stress-strain curves for the uniaxial loading and uniaxial deformation along the [001] and [111] directions, and the biaxial proportional extension along [010] and [001] for aluminium are obtained. During the uniaxial loading, certain general behaviours of the energy versus the stretch and the load versus the stretch are confirmed; in each case, there exist three special unstressed structures: f.c.c., b.c.c., and f.c.t. for [001]; f.c.c., s.c., and b.c.c. for [111]. Using stability criteria, we find that all of these states are unstable, and always occur together with shear instability, except the natural f.c.c. structure. A Pain transformation from the stable f.c.c. structure to the stable b.c.c. configuration cannot be obtained by uniaxial compression along any equivalent [001] and [111] direction. The tensile strengths are similar for the two directions. For the higher energy barrier of the [111] direction, the compressive strength is greater than that for the [001] direction. With increase in the ratio of the biaxial proportional extension, the stress and tensile strength increase; however, the critical strain does not change significantly. Our results add to the existing ab initio database for use in fitting and testing interatomic potentials.

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Molecular dynamics (MD) simulations using Morse interaction potential are performed in studies of [110] symmetrical tilt grain boundary (GB) structures with mis-orientation angles 50.5 degrees(Sigma 11), 129.5 degrees(Sigma 11), 70.5 degrees(Sigma 3) and 109.5 degrees(Sigma 3) at various tempratures. The GB structures are found to start local disordering at about 0.5T(m)(T-m is the melting point of aluminium) for 50.5 degrees(Sigma 11), 0.32T(m) for 129.5 degrees(Sigma 11) and 0.38T(m) for 70.5 degrees(Sigma 3), respectively. These results agree with conclusions deduced from the anelastic measurements. But, for twin-boundary structure 109.5 degrees(Sigma 3), this disordering has not been found even when temperature increases up to 0.9T(m).

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An optimal concentration of the etching solution for deep etching of silicon, including 3% tetramethyl ammonium hydroxide and 0.3% (NH4)(2)S2O8, was achieved in this paper. For this etching solution, the etching rates of silicon and silicon dioxide were about 1.1 mu m(.)min(-1) and 0.5 nm(.)min(-1), respectively. The etching ratio between (100) and (111) planes was about 34:1, and the etched surface was very smooth.

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Aluminium nitride (AlN) films grown with dimethylethylamine alane (DMEAA) are compared with the ones grown with trimethylaluminium (TMA). In the high-resolution x-ray diffraction Omega scans, the full width at half maximum (FWHM) of (0002) AlN films grown with DMEAA is about 0.70 deg, while the FWHM of (0002) AlN films grown with TMA is only 0.11 deg. The surface morphologies of the films are different, and the rms roughnesses of the surface are approximately identical. The rms roughness of AlN films grown with DMEAA is 47.4 nm, and grown with TMA is 69.4 nn. Although using DMEAA as the aluminium precursor cannot improve the AlN crystal quality, AlN growth can be reached at low temperature of 673 K. Thus, DMEAA is an alternative aluminium precursor to deposit AlN film at low growth temperatures.

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Valence-band type Auger lines in Al doped and undoped ZnO were comparatively studied with the corresponding core level x-ray photoelectron spectrography (XPS) spectra as references. Then the shift trend of energy levels in the valence band was that p and p-s-d states move upwards but e and p-d states downwards with increasing Al concentration. The decreased energy of the Zn 3d state is larger than the increased energy of the 0 2p state, indicating the lowering of total energy. This may indicate that Al doping could induce the enhancement of p-d coupling in ZnO, which originates from stronger Al-O hybridization. The shifts of these states and the mechanism were confirmed by valence band XPS spectra and 0 K-edge x-ray absorption spectrography (XAS) spectra. Finally, some previously reported phenomena are explained based on the Al doping induced enhancement of p-d coupling.