Dual-wavelength competitive output in Nd:Y3Sc1.5Al3.5O12 ceramic disk laser

In this paper, we demonstrated a dual-wavelength competitive output in Nd:Y3SC1.5Al3.5O12 ceramic disk laser. Different dual-wavelength output behaviors for Nd:YSAG and Nd:YAG ceramic disk laser were investigated and discussed. By applying the energy transfer model, we suggested the reasonable explanation for this new phenomenon as the disordered replacing of Al3+ ions by Sc3+ ions. The main advantage of the dual-wavelength ceramic laser is the possibility to serve as the seed source to generate Terahertz radiation. (C) 2008 Elsevier B.V. All rights reserved.

Effect of Al(PO3)(3) content on physical, chemical and optical properties of fluorophosphate glasses for 2 mu m application

The effect of Al(PO3)(3) content on physical, chemical and optical properties of fluorophosphate glasses for 2 mu m application, such as thermal stability, chemical durability, surface hardness, absorption spectra and emission spectra, is investigated. With the increment of Al(PO3)(3) content, the thermal stability characterized by the gap of T-g and T,, increases first and then decreases, and reaches the maximum level containing 5 mol% Al(PO3)(3) content. The density and chemical durability decrease monotonously with the introduction of Al(PO3)(3) content increasing, while the refractive index and surface hardness increase. Above properties of fluorophosphate glasses are also compared with fluoride glasses and phosphate glasses. The Judd-Ofelt parameters, absorption and emission cross sections are discussed based on the absorption spectra of Tm-doped glasses. The emission spectra are also measured and the 1.8 mu m fluorescence of the sample is obvious indicating that it is suitable to 2 mu m application. (c) 2008 Elsevier B.V. All rights reserved.

GaAs/Al（0.3）Ga（0.7）As短周期超晶格中负微分电导效应的观察

于2010-11-23批量导入

1MeVSi＋衬底加温注入Al（0.3）Ca（0.7）As/GaAs超晶格和GaAs的晶格损伤研究

用卢瑟福背散射沟道技术研究了1MeVSi~+在衬底加温和室温下以不同剂量注入Al＿(0．3)Ga＿(0．7)As／GaAs超晶格和GaAs后的晶格损伤。在衬底加温下, 观察到Al＿(0．3)Ga＿(0．7)As／GaAs超晶格和GaAs都存在一个动态退火速率与缺陷产生速率相平衡的剂量范围, 以及两种速率失去平衡的临界剂量。用热尖峰与碰撞模型解释了晶格损伤积累与注入剂量和衬底温度的关系。

GaAs/Ga（0.7）Al（0.3）超晶格中场致激子峰展宽机制的研究

于2010-11-23批量导入

GaAs/Ga（0.7）Al（0.3）As短周期超晶格中的自电光双稳和多稳态效应

国家自然科学基金

Strong visible up-conversion emissions and thermometric applications of Er3+-Yb3+ codoped Al2O3 prepared by the sol-gel method

The Er3+-Yb3+ codoped Al2O3 has been prepared by the sol-gel method using the aluminium isopropoxide [Al(OC3H7)(3)]-derived Al2O3 sols with addition of the erbium nitrate [Er(NO3)(3) center dot 5H(2)O] and ytterbium nitrate [Yb(NO3)(3) center dot 5H(2)O]. The phase structure, including only two crystalline types of doped Al2O3 phases, theta and gamma, was obtained for the 1 mol% Er3+ and 5 mol% Yb3+ codoped Al2O3 at the sintering temperature of 1,273 K. By a 978 nm semiconductor laser diodes excitation, the visible up-conversion emissions centered at about 523, 545, and 660 nm were obtained. The temperature dependence of the green up-conversion emissions was studied over a wide temperature range of 300-825 K, and the reasonable agreement between the calculated temperature by the fluorescence intensity ratio (FIR) theory and the measured temperature proved that Er3+-Yb3+ codoped Al2O3 plays an important role in the application of high temperature sensor.

First-principles study of p-type transparent conductive oxides CuXO2 (X=Y, Sc, and Al)

Using first-principles methods we have calculated electronic structures, optical properties, and hole conductivities of CuXO2 (X=Y, Sc, and Al). We show that the direct optical band gaps of CuYO2 and CuScO2 are approximately equal to their fundamental band gaps and the conduction bands of them are localized. The direct optical band gaps of CuXO2 (X=Y, Sc, and Al) are 3.3, 3.6, and 3.2 eV, respectively, which are consistent with experimental values of 3.5, 3.7, and 3.5 eV. We find that the hole mobility along long lattice c is higher than that along other directions through calculating effective masses of the three oxides. By analyzing band offset we find that CuScO2 has the highest valence band maximum (VBM) among CuXO2 (X=Y, Sc, and Al). In addition, the approximate transitivity of band offset suggests that CuScO2 has a higher VBM than CuGaO2 and CuInO2 [Phys. Rev. Lett. 88, 066405 (2002)]. We conclude that CuScO2 has a higher p-type doping ability in terms of the doping limit rule. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2991157]

Synthesis and crystal structure of aluminium complex with 3-hydroxyflavone

[Al(C15H9O3)(3)](2) . 2CHCl(3) . 8H(2)O was synthesized, and its crystal structure was determined. It belongs to trigonal system, R3, a=b=1. 655 8(3) nm, c=3. 646 5(20) nm, alpha = beta = 90 degrees, gamma = 120 degrees, V = 8. 656 08(0. 005 86) nm(3). D-c = 1.45 g/cm(3), mu(Mo K alpha) = 3. 20 cm(-1), F (000) = 3 924. The crystal structure was solved by Patterson and Fourier techniques, and refined by a block-diagonal least-squares method. A total of 3 737 independent intensity data were collected, of which 1 033 with I greater than or equal to 3 sigma(I-0) were observed, R = 0. 091 8, Rw=0. 091 8. Al3+ ion was 6-coordinated, bound to six oxygen atoms from three 3-hydroxyflavones to form a distortional coordination octahedron.

碱金属和碱土金属氟化物对掺Er^3＋氟磷酸盐玻璃光谱性质的影响

研究了碱金属和碱土金属离子修饰的掺Er^3＋氟磷酸盐玻璃的光谱性质，讨论了碱金属和碱土金属对铒氟磷玻璃的吸收和发射截面、荧光半高宽，Judd-Ofelt强度参数和上转换发光强度等光谱性质的影响，并与一些传统氧化物玻璃系统进行了比较．研究表明碱金属K^＋和碱土金属Sr^2＋掺杂高的玻璃更适宜用作光放大器基质．含12mol％K^＋的氟磷玻璃展现出7．83×10^-21cm^2的高发射截面和最小的荧光上转换强度；含23mol％Sr^2＋的氟磷玻璃则有7．58×10^-21cm^2的高发射截面、65nm的荧光半高

高温气冷堆He载气中H_2和CO转化实验研究

研究了H＿2和CO在CuO－ZnO＿Al＿2O＿3催化床中转化成H＿2O和CO＿2的实验装置和实验结果，论证了不同床层工作温度、系统压力、杂质浓度、流量及露点温度等因素对氧化铜床工作性能的影响；测得了H＿2和CO在CuO－ZnO－Al＿2O＿3床上的转化特性曲线等变化规律，获得了转化容量、工作周期和转化效率等实验数据，确定了最佳运行参数。结果表明，使用CuO＿ZnO－Al＿2O＿3床可使净化后的H＿2和CO的体积分数都小于2×l0￣（－6），满足高温气冷堆的净化要求。为高温气冷堆中氧化铜床装置提供了可靠的设计数据。

新型硅基双异质外延SOI材料Si/γ-Al_2O_3/Si制备

异质外延法是目前制备新型SOI材料的技术途径之一。采用低压化学气相沉积技术(LPCVD)在硅衬底上先外延r-A1-2O-3绝缘单晶薄膜，制备出硅衬底上外延氧化物外延结构r-Al-2O-3／Si(EOS)，然后采用类似SOS薄膜生长的常压CVD(APCVD)方法在EOS上外延硅单晶薄膜，形成新型硅基双异质SOl材料Si／r-Al-2O-3／Si。利用反射高能电子衍射(RHEED)、X射线衍射(XRD)、俄歇电子能谱(AES)及MOS电学测量等技术表征分析了Si(100)／r-Al-2O-3(100)／Si(100)SOI异质结构的晶体结构、组分和电学性能。测试结果表明，已成功实现了高质量的新型双异质外延SOI结构材料Si(100)／ r-Al-2O-3(100)／Si(100)，r-Al-2O-3与Si外延薄膜均为单晶，r-Al-2O-3薄膜具有良好绝缘性能，SOI结构界面清晰陡峭，该SOI材料可应用于CMOS电路的研制。