Columnar aerosol optical properties at AERONET sites in central eastern Asia and aerosol transport to the tropical mid-Pacific

IEECAS SKLLQG

accurate and self-consistent ocean color algorithm:simultaneous retrieval of aerosol optical properties and chlorphyll concentrations

A new algorithm has been developed for simultaneous retrieval of aerosol optical properties and chlorophyll concentrations in case I waters. This algorithm is based on an improved complete model for the inherent optical properties and accurate simulations of the radiative transfer process in the coupled atmosphere-ocean system. It has been tested against synthetic radiances generated for the Sea-Viewing Wide Field-of-View Sensor (SeaWiFS) channels and has been shown to be robust and accurate. A unique feature of this algorithm is that it uses the measured radiances in both near-IR and visible channels to find that combination of chlorophyll concentration and aerosol optical properties that minimizes the error across the spectrum. Thus the error in the retrieved quantities can be quantified.

Optical characteristics of DBR with inhomogeneous graded interfaces

Optical properties of Al0.9Ga0.1As/Al gamma Ga1-gamma As/GaAs/Al chi Ga1-chi As DBR with inhomogeneous graded interfaces has been investigated by using characteristic matrix method. The refractive index model and the analytic characteristic matrix of graded interfaces are obtained. The reflectance spectrum and the reflective phase shift are calculated for GaAs/Al-0.9 Ga-0.1 As DBR and graded interfaces DBR by using characteristic matrix method. The effect of graded interfaces on the optical properties of DBR is discussed. The result shows an extra graded phase matching layer must he added in front of the graded interfaces DBR to fulfil the conditions of phase matching at central wavelength. The accurate thickness of phase matching layer is calculated by optical thickness approximation method.

Design and fabrication of color filters for projection display system

Color filters are key components in an optical engine projection display system. In this paper, a new admittance-matching method for designing and fabricating the high performance filters is described, in which the optimized layers are limited to the interfaces between the stack (each combination of quarter-wave-optical-thickness film layers is called a stack) and stack, or between stack and substrate, or between stack and incident medium. This method works well in designing filters containing multiple stacks such as UV-IR cut and broadband filters. The tolerance and angle sensitivity for the designed film stacks are analyzed. The thermal stability of the sample color filters was measured. A good result in optical performance and thermal stability was obtained through the new design approach. (c) 2006 Society of Photo-Optical Instrumentation Engineers.

电子束蒸发氧化锆薄膜的粗糙度和光散射特性

利用电子束蒸发工艺，以Ag层为衬底，沉积了中心波长为632．8nm的氧化锆（ZrO2）薄膜，膜层厚度在80-480nm范围内变化．研究了不同厚度样品的粗糙度变化规律和表面散射特性．结果发现，随着膜层厚度的逐渐增加．其表面均方根（RMS）粗糙度和总积分散射（TIS）均呈现出先减小后增大的趋势．利用非相关表面粗糙度的散射模型对样品的TIS特性进行了理论计算，所得结果与测量结果相一致．

Negative dispersion mirrors in Ta2O5/: SiO2 for femtosecond Ti : Sapphire lasers by using gires-tournois interferometers

We design and experimentally demonstrate some negative dispersion mirrors with optimized Gires-Tournois interferometers. The mirror structure is composed of 38 alternating Ta2O5 and SiO2 layers and could be regarded as two sections: high-reflectivity section consisting of a series of quarter-wavelength optical thickness stacks and negative-dispersion section consisting of only 13 layers. The designed mirrors exhibit the expected performance. These mirrors were fabricated by using ion beam sputtering. By adopting such mirrors, dispersion of a mode-locked femtosecond Ti:sapphire laser has been compensated for mostly. With two series of the mirrors, 32 fs and 15 fs pulses have been obtained respectively.

Design and fabrication of color filters for projection display system

Color filters are key components in an optical engine projection display system. In this paper, a new admittance-matching method for designing and fabricating the high performance filters is described, in which the optimized layers are limited to the interfaces between the stack (each combination of quarter-wave-optical-thickness film layers is called a stack) and stack, or between stack and substrate, or between stack and incident medium. This method works well in designing filters containing multiple stacks such as UV-IR cut and broadband filters. The tolerance and angle sensitivity for the designed film stacks are analyzed. The thermal stability of the sample color filters was measured. A good result in optical performance and thermal stability was obtained through the new design approach. (c) 2006 Society of Photo-Optical Instrumentation Engineers.

引入过渡层提高介质减反膜的抗激光损伤阈值

提出了一种用于提高介质减反膜的损伤阈值的新的方法，在H2.5L (H:HfO2, L:SiO2)的膜层与基底之间引入4个1/4光学厚度的SiO2薄膜，发现抗激光损伤阈值提高了50%，并且保持1064nm处的反射率低于0.09%。本文分析了造成这一提高的机制，一定厚度的氧化硅过渡层的引入是一种提高介质减反膜的损伤阈值的灵活有效的方法。

Coupled AlxGa1-xAs-AlAs distributed Bragg reflectors for high brightness AlGaInP light emitting diodes

A novel coupled distributed Bragg reflector (DBR) with double thickness periods was theoretically analyzed based on the spontaneous radiation properties of high brightness AlGaInP light emitting diodes(LED). Several important factors were considered including spontaneous radiation angle distribution, absorption and FTR of DBR. Calculation results showed that the optimum optical thickness of single layer of the DBR deviates from 1/4 lambda. AIGaInP high brightness light emitting diodes both with Al0.5Ga0.5As/AlAs coupled DBR and with conventional DBR were fabricated by metalorganic chemical vapor deposition(MOCVD). X-ray double crystal diffraction and reflection spectrum were employed to determine the thickness and reflectivity of the DBR. It was found that reflectivity of coupled DBR is less sensitive to incident angle than conventional DBR, higher external quantum efficiency of light emitting diodes with coupled DBR was obtained than that with conventional DBR.

中国西部大气和雪冰黑碳及其传输过程研究

Glaciers in west China are the sources of the major great rivers in Asia, and the solid water resources are crucial to China and South Asia. Black carbon (BC) results in very complex climate effects not only in the atmosphere, but accelerates the melting after its deposit on the surface of snow/ice. As the main distributed area of glaciers in China, the Tibetan Plateau (TP) and Xinjiang region are abutted by South Asia, Central Asia, and Russia, and east China, and the atmospheric environment would be influenced by the BC emitted from these regions. Whereas, the BC’s temporal and spatial distributions for concentration in the mid and top troposphere in west China, its transport, and its radiative forcing after deposited on the snow/ice surface are not well understood at the present. In the field, we collected samples from surface snow, snow pits, ice core, and aerosol in the glaciers, analyzed BC content mainly by the thermo-oxidized method in the laboratory, and discussed temporal and spatial distributions for BC concentrations in glaciers, the transport, and its impacts on the environment. Several conclusions were derived as follows: 1_Spatial distribution and the impact on albedos for BC concentrations in snow/ice: the BC concentrations in the surface snow for the investigated glaciers could be placed in areas, the Tianshan Mountains ＞ the central TP ＞ the Pamirs ＞ the Qilian Mountians ＞ the Himalayas. This distribution could be attributed to the elevation of the glaciers, the topography of the TP, and more regional emissions. Probably significant impacts on the albedos of the glacier surface could be caused by BC deposits, and the estimated reduced albedos on the glaciers are 9.8% (the Zhadang glacier), 8.7% (the Miao’ergou Riverhead No.3 glacier), and 6.8% (the Kuitun River Haxilegen No.48 glacier), and 6.2% (the Dongkemadi glacier), and 5.3% (the La’nong glacier), and 4.2% (the Muztagata glacier), etc. 2_The temporal variance of BC concentrations in ice of the East Rongbuk Glacier (ERG) and its climatic implications: major cations and anions (e.g., SO42- and Ca2+) concentrations in aerosols during summer monsoon seasons showed their close relationships with the sources of air masses, in which the variance of SO42- concentrations suggested the atmospheric environment over the ERG was significantly influenced by the aerosols from South Asia. BC record based on an ice core suggested its deposit was dominantly transported by monsoons in summers and by westerlies in other seasons, and the BC from South Asia in summers dominated the varying trend of its concentrations in the ice core and caused higher concentrations in summers than those in other seasons. In the past 50 yrs, BC concentrations showed fluctuations, whereas showed an increasing tread in the most recent decade, and exceeded 50 μg kg-1 in the summer of 2001; correspondingly, the radiative forcing caused by BC showed an increasing trend since 1990s, and exceeded 4.5 W m-2 in the summer of 2001. 3_Cabonaceous aerosols in the Nam Co region: organic carbon (OC) concentration accounted for ～95% and BC for ～5% in the total carbonaceous aerosol concentration, which was significantly influenced by summer precipitations. OC was dominantly derived from fossil fuel burning and BC from both fossil fuel and biomass burning. Trajectory analysis and aerosol optical depth suggested the atmospheric environment in the Nam Co region was most probably influenced by the emissions from South Asia. The potential source regions of air pollutants in the Nam Co regions in summers might be Bangladesh and east India, and in winters might be the Indo-gangetic basin. The scavenging ratio of atmospheric BC by rainfalls was less than those at other sites. West China is a less-developed region for industry, where BC concentrations in the atmosphere and snow/ice could be significantly influenced by the emissions from the abutted regions with rising industries (South Asia, Central Asia, and Russia). For example, snow/ice BC concentrations in the glaciers of the Parmirs, the Tianshan Mountains, and the Qilian Mountains in the northeast margin of the TP might be more influenced by the emissions from Centrial Asia (transported by the westerlies), those in the glaciers of the Himalayas might be more influenced by the emissions from South Asia (transported by the monsoons and the westerlies), and atmospheric carbonaceous aerosols might also be more influenced by the emissions from South Asia (transported by the monsoons and the westerlies). The BC concentrations in some glaciers might cause significant impacts on the albedos for the glaciers, and therefore enhanced the radiative forcings, for example, the ERG. The research on the relationships among atmospheric and snow/ice BC and its radiative forcing, variance of snow cover, mass balance of glaciers, and climate forcing would be needed in future.

Influence of buffer layer thickness on the structure and optical properties of ZnO thin films

A series of ZnO thin films were deposited on ZnO buffer layers by DC reactive magnetron sputtering. The buffer layer thickness determination of microstructure and optical properties of ZnO films was investigated by X-ray diffraction (XRD), photoluminescence (PL), optical transmittance and absorption measurements. XRD results revealed that the stress of ZnO thin films varied with the buffer layer thickness. With the increase of buffer layer thickness, the band gap edge shifted toward longer wavelength. The near-band-edge (NBE) emission intensity of ZnO films deposited on ZnO buffer layer also varied with the increase of thickness due to the spatial confinement increasing the Coulomb interaction between electrons and holes. The PL measurement showed that the optimum thickness of the ZnO buffer layer was around 12 nm. (c) 2005 Elsevier B.V. All rights reserved.

Thickness dependence of structure and optical properties of silver films deposited by magnetron sputtering

A series of silver films with different thickness were prepared under identical conditions by direct current magnetron sputtering. The optical properties of the silver films were measured using spectrophotometric techniques and the optical constants were calculated from reflection and transmission measurements made at near normal incidence. The results show that the optical properties and constants are affected by films' thickness. Below the critical thickness of 17 nm at which Ag film forms a continuous film, the optical properties and constants vary significantly as the thickness of films increases and then tends to a stable value which is reached at 41 nm. X-ray diffraction measurements were carried out to examine the structure and stress evolution of the Ag films as a function of films' thickness. It was found that the interplanar distance of (111) orientation decreases when the film thickness increases and tends to be close to that of bulk material. The compressive strains also decrease with increasing thickness. (C) 2007 Published by Elsevier B.V.

Thickness dependent dislocation, electrical and optical properties in InN films grown by MOCVD

InN thin films with different thicknesses are grown by metal organic chemical vapor deposition, and the dislocations, electrical and optical properties are investigated. Based on the model of mosaic crystal, by means of X-ray diffraction skew geometry scan, the edge dislocation densities of 4.2 x 10(10) cm(-2) and 6.3 x 10(10) cm(-2) are fitted, and the decrease of twist angle and dislocation density in thicker films are observed. The carrier concentrations of 9 x 10(18) cm(-3) and 1.2 x 10(18) cm(-3) are obtained by room temperature Hall effect measurement. V-N is shown to be the origin of background carriers, and the dependence of concentration and mobility on film thickness is explained. By the analysis of S-shape temperature dependence of photoluminescence peak, the defects induced carrier localization is suggested be involved in the photoluminescence. Taking both the localization and energy band shrinkage effect into account, the localization energies of 5.05 meV and 5.58 meV for samples of different thicknesses are calculated, and the decrease of the carrier localization effect in the thicker sample can be attributed to the reduction of defects.

Effect of critical thickness on structural and optical properties of InxGa1-xN/GaN multiple quantum wells

InGaN/GaN multiquantum-well (MQW) structures grown by metalorganic chemical-vapor deposition on n-type GaN and capped by p-type GaN were investigated by cross-sectional transmission electron microscopy, double crystal x-ray diffraction, and temperature-dependent photoluminescence. For the sample with strained-layer thicknesses greater than the critical thicknesses, a high density of pure edge type threading dislocations generated from MQW layers and extended to the cap layer was observed. These dislocations result from a relaxation of the strained layers when their thicknesses are beyond the critical thicknesses. Because of indium outdiffusion from the well layers due to the anneal effect of Mg-doped cap layer growth and defects generated from strain relaxation, the PL emission peak was almost depressed by the broad yellow band with an intensity maximum at 2.28 eV. But for the sample with strained-layer thicknesses less than the critical thicknesses, it has no such phenomenon. The measured critical thicknesses are consistent with the calculated values using the model proposed by Fischer, Kuhne, and Richter. (C) 2004 American Institute of Physics.

Influence of InAs deposition. thickness on the structural and optical properties of InAs quantum wires

The influence of InAs deposition thickness on the structural and optical properties of InAs/InAlAs quantum wires (QWR) superlattices (SLS) was studied. The transmission electron microscopy (TEM) results show that with increasing the InAs deposited thickness, the size uniformity and spatial ordering of InAs QWR SLS was greatly improved, but threading dislocations initiated from InAs nanowires for the sample with 6 monolayers (MLs) InAs deposition. In addition, the zig-zag features along the extending direction and lateral interlink of InAs nanowires were also observed. The InAs nanowires, especially for the first period, were laterally compact. These structural features may result in easy tunneling and coupling of charge carriers between InAs nanowires and will hamper their device applications to some extent. Some suggestions are put forward for further improving the uniformity of the stacked InAs QWRs, and for suppressing the formation of the threading dislocations in InAs QWR SLS.