利用96孔板和重组基因酵母筛选环境内分泌干扰物

重组基因酵母筛选法因其快速灵敏、廉价易行和高通量而成为较为广泛应用的内分泌干扰物筛选法之一 .采用 96孔培养板替代三角锥瓶对酵母筛选法进行了改进 .改进后的方法更加简便 ,节省了大量试剂

A CMOS front-end circuit for SONET OC-96 receiver

An optical receiver front-end for SONET OC-96 receivers was analyzed and designed in 0.18 mu m CMOS process. It consists of a transimpedance amplifier (TIA) and a limiting amplifier (LA). The TIA takes a fully differential configuration, and regulated cascode (RGC) input stage is implemented. The LA was realized by five cascaded identical gain stages with active inductor load. The TIA achieved 4.2GHz bandwidth for 0.5pF photodiode (PD) capacitance and 1.2k 0 transimpedance gain. The LA achieved 5.4GHz bandwidth and 29dB voltage gain. The optical sensitivity is -19dBm at 5-Gb/s for a bit-error rate of 10(-12), and it dissipates 45.5mW for I.8V supply.

截止波长12μm的InAs0.04Sb0.96/GaAs的熔体外延生长及特性研究

用熔体外延(ME)法在半绝缘(100)GaAs衬底上成功生长出了截止波长为12 μm的InAs0.04Sb0.96外延层.傅立叶变换红外(FTIR)透射光谱揭示,InAsSb合金的禁带宽度被强烈变窄.通过分析InAs0.04Sb0.96外延层载流子浓度的温度依存性表明,其室温禁带宽度为0.105 5 eV,与透射光谱测得的数值很好地一致.通过测量12～300 K的吸收光谱,研究了InAs0.04Sb0.96/GaAs的禁带宽度的温度依存性.霍尔测量得出300 K下样品的电子迁移率为4.47×104 cm2/Vs,载流子浓度为8.77×1015 cm-3;77 K下电子迁移率为2.15×104 cm2/Vs,载流子浓度为1.57×1015 cm-3;245 K下的峰值迁移率为4.80×104 cm2/Vs.

96 MEV能量下~(16)O + ~(94)Ni反应机制研究

The pro sectile-like fragments of ~(16)O + ~(64)Ni Reaction (Elab = 96 MeV) were measured by using ionization chamber telescopes. The countour plots of d~36/dndEdz in TKE-θ plane angular distribution integrating over different TKE window. The z-distribution and angular distributions of different fragments from He to O were obtained. The main mechanisms dominating in this reaction were discussed