Nano-Hardness Tester and its Application in MEMS

微机电系统(MEMS)技术的迅速崛起,推动了对其所用材料和结构的力学性能研究。简要介绍纳米硬度技术的发展展、理论模型和MTS公司的Nano Indenter XP系统的配置、测量原理及功能。并根据我们的一些研究结果,说明它在微机电系统中的应用。

大功率高重复频率准分子激光器单元技术及元器件

<正> 由中国科学院力学研究所承担的“大功率高重复频率准分子激光器单元技术及元器件”系国家重点科技攻关项目,已通过中科院和国家教委联合组织的鉴定会。该项目包括三项具体研究成果,即磁脉冲压缩器、高重复频率大电流开关、数字式高电压表。

Detection of hepatitis B virus markers using a biosensor based on imaging ellipsometry

A biosensor based on imaging ellipsometry (BIE) has been developed and validated in 169 patients for detecting five markers of hepatitis B virus (HBV) infection. The methodology has been established to pave the way for clinical diagnosis, including ligand screening, determination of the sensitivity, set-up of cut-off values (CoVs) and comparison with other clinical methods. A matrix assay method was established for ligand screening. The CoVs of HBV markers were derived with the help of receiver operating characteristic curves. Enzyme-linked immunosorbent assay (ELISA) was the reference method. Ligands with high bioactivity were selected and sensitivities of 1 ng/mL and 1 IU/mL for hepatitis B surface antigen (HBsAg) and surface antibody (anti-HBs) were obtained respectively. The CoVs of HBsAg, anti-HBs, hepatitis B e antigen, hepatitis B e antibody and core antibody were as follows: 15%, 18%, 15%, 20% and 15%, respectively, which were the percentages over the values of corresponding ligand controls. BIE can simultaneously detect up to five markers within 1 h with results in acceptable agreement with ELISA, and thus shows a potential for diagnosing hepatitis B with high throughput.

Propagation of a few-cycle laser pulse in a V-type three-level system

Propagation of a few-cycle laser pulse in a V-type three-level system (fine structure levels of rubidium) is investigated numerically. The full three-level Maxwell-Bloch equations without the rotating wave approximation and the standing slowly varying envelope approximation are solved by using a finite-difference time-domain method. It is shown that, when the usual unequal oscillator strengths are considered, self-induced transparency cannot be recovered and higher spectral components can be produced even for small-area pulses. (c) 2005 Pleiades Publishing, Inc.

高功率半导体激光器线阵列的波长锁定技术

高功率半导体激光器光谱随温度和工作电流的变化比较大，光谱线宽比较宽，这些缺点直接限制了其实际应用。因此，高功率半导体激光器波长稳定技术的研究是激光领域的一个重要研究方向。对波长稳定技术进行研究。实验用体布拉格光栅（VBG）作为反馈元件与高功率半导体激光器线阵列，构成可以对其波长进行锁定的外腔激光器。分析了外腔激光器的波长锁定效果与高功率半导体激光器工作电流、冷却温度、工作电流的占空比和“smile”现象等因素的关系。研究结果表明，高功率半导体激光器的工作电流、冷却温度、工作电流的占空比会影响其激射波长，当激射波长与VBG的布拉格波长差值小于3．0nm时，可以得到较好的波长锁定效果，而阵列本身的“smile”现象对其波长锁定的影响不大。

Effects of process on microstructure and properties of translucent Dy-alpha-SiAlON sintered at lower temperatures

Hot pressing (HP) at higher sintering temperature has been a traditional and prevalent technique for the fabrication of alpha-SiAlON. In order to prepare translucent SiAlON more easily, LiF was used as a non-oxide sintering additive to lower the sintering temperature to <= 1650 degrees C. As a result, all of the samples possessed a good hardness and fracture toughness. At the same time, the lower temperature sintered samples showed a higher optical transmittance in the range of 2.5-5.5 mu m wavelength (0.5 mm in thickness). The maximum infrared transmission reached 68% at a wavelength of 3.3 mu m. The present work shows that the sintering process has a strong effect on microstructure and property of alpha-SiAlON. To be exact, a lower sintering temperature and longer holding time can produce some fully-developed microstrcture, which is beneficial for the optical transmittance. (C) 2008 The Ceramic Society of Japan. All rights reserved.

小麦-多枝赖草抗性纯合易位系统的培育及其遗传标记

本研究以小麦与多枝赖草属间杂种后代BC_2F_3-F_6为基本材料，首先对其进行抗性鉴定和细胞学分析，从中选出一些抗性较好且体细胞染色体数2n = 42、PMC减数分裂期染色体配对比较正常的株系，进而以此为试材进行花药培养。研究过程中，解决了小麦远缘杂种后代花药培养愈伤组织诱导出愈率、绿苗分化率、最终绿苗得率、移栽成活率以及自然加倍率低等一个个障碍着小麦远缘杂种后代花药培养的关键性技术难题，获得了小麦与多枝赖草杂种后代花药培养的成功，共得到了150多个后代纯系的种子。 对这些后代纯系进行遗传标记技术鉴定。形态标记结果表明，后代材料中带有多枝赖草的标记性状，如耐盐、抗旱、抗黄矮、白粉病等;细胞学分析发现加倍单倍体（H_1）植株减数分裂染色体配对出现环形四价体、测交检测发现棒状二价体增加，初步鉴定选择出小麦与多枝赖草的纯合易位系。进一步利用现代分子生物学技术，进行分子标记、染色体原位杂交，结果表明材料中有外源（多枝赖草）染色体片段的存在。RFLP分析结果不仅证实外源基因的存在，而且初步实现了外源染色体片段的定位。RAPD分析结果，筛选出22个在多枝赖草与普通小麦间有多态性的引物，可以用来对多枝赖草的杂交后代进行分析。所鉴定的三个后代材料中，均扩增出了多枝赖草的同源特性征带，其中“82”2条、“87”2条、“116”6条。进一步说明这些材料中含有多枝赖草的染色体片段。从分子水平上分析证实已将多枝赖草的染色体片段或基因导入普通小麦，获得了纯合易位系。结合综合农艺性状调查、小区产量比较试验以及田间筛选试验等方面的工作，从中筛选鉴定出了一批既有外源基因（如抗黄矮病、抗旱、耐盐等）导人，且农艺性状好的小麦易位系新种质。同时，结合以往的研究工作，建立起一套小麦属间杂种通过花药培养快速获得纯合易位系的技术体系和相应的操作程序。

鸟类宏观分类和区系地理学研究概述

据Dickinson，E．C．，主编，2003年出版的“m Howard and Moore Gomplete Q蛐ofthe Birds of the World'’一书和2000。2008年的有关文献的记载，在1958～2008年的50年期间，全世界所描述发表鸟类的新种，计 有171种。以每10年中所发表的新种数进行统计比较，以1997～2007年期间所发表的新种为最多；按发现新种所属 目级分类阶元的统计比较，以雀形目发现的新种为最多；按地区进行统计比较，以南美洲发现的新种数为最多，非洲中南部地区和太平洋诸岛为次；在中国境内描记的新种有台湾短翅莺西哟脚嬲旋渤删、峨嵋柳莺场皿瞰灿mzden面、海南柳莺崩砌蚴‰肠砌船、峨嵋鹪莺岛匆船硎豳面、淡尾鹅莺崩锄船．．toror、弄岗穗鹛＆叻帕御赠删、 四川旋木雀眺砌婶删等7种，其中由中国鸟类学者描记的有四川旋木雀和弄岗穗鹛两种。这说明鸟类的宏 观分类研究，时至今日仍有研究的必要和发展空间。种下分类，是探讨同一个物种，随着分布区域的扩大，自然地 理环境条件的变化，而产生地区性分布种群的变异，以致新物种形成的途径，是宏观分类学研究一个物种的演化发 展。所以是当今鸟类分类研究的热点之一。据统计，1958—2008年的50年间，新描述发表的亚种数，约为1 129亚 种。繁殖区域分布较为广泛的种类，所描记的亚种较多。如岛鸫Turd．sp，hbcephaha分化有5l亚种之多。中国鸟类的 分类与区系地理学研究，大致可分为起步时期(1949年以前)、新中国建立之后的考察及宏观分类研究的总结整理 时期(1950—2005)和宏观与微观相结合的发展研究时期(1999年以后)等3个时期。郑作新所出版的《中国鸟类 分布名录》和《中国鸟类区系纲要》等专著，是中国鸟类宏观分类和区系地理学研究较为翔实的阶段性总结，为进 一步研究奠定了坚实的基础。

鄱阳湖鱼类资源及渔业利用

1997年冬至2000年春,对我国最大淡水湖鄱阳湖的鱼类与渔业利用状况进行了调查．在1955年至2000年期间,鄱阳湖累计记录鱼类136种,隶属于25科78属;其中鲤科鱼类最多,有71种,占总种数的52．2%,其次是鲿科,12种,占8．8%,本次调查期间共记录鱼类101种,新记录鱼类6种,即亮银鮈、洞庭小鳔鮈、光唇蛇鮈、短须鱊、方氏鳑鮍和粘皮鲻鰕虎鱼．还分析了该湖鱼类区系组成的变化、主要渔具的渔获物组成特征以及渔产量动态,提出了未来湖泊渔业可持续发展的建议．

城市污水处理厂进出水中类雌激素暴露影响评价

以稀有鮈鲫(Gobiocypris rarus)为模型动物,利用卵黄蛋白原(VTG)和生长发育指标作为类雌激素污染的生物标志物,评价了沙湖污水处理厂进出水中类雌激素暴露对稀有鮈鲫仔鱼的影响.结果表明:暴露21d后,未稀释进水和一级处理出水对稀有鮈鲫仔鱼VTG有显著诱导,各级处理水对稀有鮈鲫的生长发育也造成了一定的影响,在进水和一级处理出水暴露组中有死亡现象发生.以17β-雌二醇(E2)为阳性对照,对稀有鮈鲫VTG的诱导作标准曲线,计算进水以及各级出水的类雌激素E2的活性当量,发现污水处理厂一级和二级处理工

FREQUENCY AND TEMPORAL COHERENCE PROPERTIES OF DISTRIBUTED BRAGG REFLECTOR LASER

This article presents the investigation of frequency and temporal coherence properties of distributed Bragg reflector laser. In this scheme, a square-wavefrom voltage is applied to the phase section of the laser to little optical wavelength, and delayed optical heterodyne technique is used for the analysis of spectral characteristics. Experiments show that lightwaves emitted from the same active region asynchronously are partially frequency and temporal coherent. When the two wavelengths are closer, the two waves are strong v coherent, and the coherence properties get weak as the delay v time increases. (C) 2010 Wiley Periodicals, Inc. Microwave Opt Technol Left 52: 822-825, 2010 Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25031

Columnar structures and stress relaxation in thick GaN films grown on sapphire by HVPE

Thick GaN films with high quality are directly grown on sapphire in a home-built vertical hydride vapour phase epitaxy (HVPE) reactor. The optical and structural properties of large scale columnar do-mains near the interface are studied using cathodoluminescence and micro-Raman scattering. These columnar do-mains Show a strong emission intensity due to extremely high free carrier concentration up to 2 x 10(19) cm(-3), which are related with impurities trapped in structural defects. The compressive stress in GaN Elm clearly decreases with increasing distance from interface. The quasi-continuous columnar domains play an important role in the stress relaxation for the upper high quality layer.

Capacitance-voltage characteristic as a trace of the exciton evolvement from spatially direct to indirect in quantum wells

We have investigated the photo-excited capacitance-voltage (C-V) characteristics as well as the photoluminescence spectra under different biases of a wide quantum well (QW) embedded in an n(+)-i-n(+) double-barrier structure. The pronounced peak feature at zero bias in the C-V spectrum observed upon illumination is regarded as a kind of quantum capacitance related to the quantum confined Stark effect, originating from the spatial separation of the photo-generated electron and hole gas in the QW. This fact is further demonstrated through the comparison between the C-V curve with the PL intensity versus applied voltage relationship under the same excitation. The results may provide us with a more direct and sensitive means in the detection of the separation and accumulation of both types of free carriers-electrons and holes-in low-dimensional semiconductor structures, especially in a new type of optical memory cell.